JP6668597B2 - 高電子移動度トランジスタ及び高電子移動度トランジスタの製造方法 - Google Patents
高電子移動度トランジスタ及び高電子移動度トランジスタの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title description 14
- 239000000758 substrate Substances 0.000 claims description 23
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 177
- 229910002601 GaN Inorganic materials 0.000 description 176
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 35
- 239000004065 semiconductor Substances 0.000 description 25
- 235000012431 wafers Nutrition 0.000 description 24
- 239000007789 gas Substances 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 18
- 238000000034 method Methods 0.000 description 15
- 229910002704 AlGaN Inorganic materials 0.000 description 7
- 239000002994 raw material Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Description
以下の手順で、実施例1,2,4,5及び参考例3の半導体ウェハを製造した。実施例1,2,4,5及び参考例3の各半導体ウェハの製造方法は、後述する第1のGaN層及び第2のGaN層の膜厚を変化させた以外は同様とした。まず、TMAガス及びNH3ガスを用い、1100℃の条件下のOMVPE法により、バッファ層として機能するAlN層を半絶縁性のSiC基板上に成長した。次に、TMGガス及びNH3ガスを用い、125Torr、1090℃の条件下のOMVPE法により、第1のGaN層をAlN層上に成長した。次に、TMGガス及びNH3ガスを用い、125Torr、1050℃の条件下のOMVPE法により、第2のGaN層を第1のGaN層上に成長した。次に、TMAガス、TMGガス及びNH3ガスを用い、125Torr、1050℃の条件下のOMVPE法により、電子供給層として機能するAlGaN層を第2のGaN層上に成長した。各実施例のAlN層の厚さは15nmとし、AlGaN層の厚さは20nmとした。また、各実施例及び参考例3の第1のGaN層の厚さ及び第2のGaN層の厚さは、以下の表1に示す。なお、実施例1,2,4及び参考例3の第1のGaN層の厚さと第2のGaN層の厚さとの合計値は500nmであり、実施例5の第1のGaN層の厚さと第2のGaN層の厚さとの合計値は400nmである。
第1のGaN層の成長時における圧力を200Torrと設定し、成長温度を1050℃と設定した以外は、実施例1〜5と同様にして半導体ウェハを形成した。各実施例及び参考例8の第1のGaN層の厚さ及び第2のGaN層の厚さは、以下の表2に示す。なお、実施例6,7,9及び参考例8の第1のGaN層の厚さと第2のGaN層の厚さとの合計値は500nmであり、実施例10の第1のGaN層の厚さと第2のGaN層の厚さとの合計値は400nmである。
第2のGaN層を形成しなかったこと以外は実施例1,2,4〜7,9,10及び参考例3,8と同様にして半導体ウェハを形成した。以下の表1及び表2に示すように、比較例1の第2のGaN層の膜厚を500nmとし、比較例2の第2のGaN層の膜厚を800nmとした。比較例1,2では、実際には第1のGaN層が存在せず第2のGaN層のみとなるので第1、第2を区別する必要はないが、実施例1,2,4〜7,9,10及び参考例3,8との比較のため第2のGaN層とした。
実施例1,2,4〜7,9,10、参考例3,8及び比較例1,2の半導体ウェハの電子供給層の表面を、光学顕微鏡(オリンパス株式会社製MX50)を用いて観察した。上記表面において、直径が0.2μm以上の大きさのピットの有無及び数を観察した。各実施例、各参考例及び各比較例の1cm2あたりのピットの数(ピット密度)を表1,2に示す。また、実施例1,2,4〜7,9,10及び参考例3,8における第1のGaN層の膜厚とピット密度との関係を示すグラフを図4に示す。図4において、横軸は第1のGaN層の膜厚を示し、縦軸はピット密度を示す。菱形で示されるデータA1〜A5は、実施例1、実施例2、参考例3、実施例4、実施例5の第1のGaN層の膜厚に対するピット密度をそれぞれ示す。四角で示されるデータB1〜B5は、実施例6、実施例7、参考例8、実施例9、実施例10の第1のGaN層の膜厚に対するピット密度をそれぞれ示す。
実施例1,2,4〜7,9,10、参考例3,8及び比較例1,2の半導体ウェハに対して、塩素系ガスを用いたメサアイソレーションを行った。次に、Ti膜及びAl膜からなるオーミック電極、及びNi膜及びAu膜からなるゲートをパターン形成した。そして、窒化ケイ素からなる保護膜を形成することによって、HEMTを作成した。また、このHEMTの作成と同時に、ギャップを4μm、チャネル幅Wを200μmと設定したモニタ素子を作成した。各実施例、各参考例及び各比較例のモニタ素子に対して、100Vのドレイン電圧を印加し、該HEMTのリーク電流を測定した。各実施例、各参考例及び各比較例のモニタ素子のリーク電流を表1,2に示す。また、実施例1,2,4〜7,9,10及び参考例3,8における第2のGaN層の膜厚とリーク電流との関係を示すグラフを図5に示す。図5において、横軸は第2のGaN層の膜厚を示し、縦軸はピット密度を示す。図5において、菱形で示されるデータC1〜C4は、実施例1、実施例2、参考例3、実施例4の第2のGaN層の膜厚に対するリーク電流をそれぞれ示す。四角で示されるデータD1〜D4は、実施例6、実施例7、参考例8、実施例9の第2のGaN層の膜厚に対するリーク電流をそれぞれ示す。
Claims (1)
- 基板上にバッファ層として設けられ、5nm以上30nm以下の厚さを有する単一のAlN層と、
前記AlN層の直上に設けられ、炭素濃度が1×1016atoms/cm3未満であり、100nm以上200nm以下の厚さを有する単一の第1のGaN層と、
前記第1のGaN層の直上であって電子供給層の直下に設けられ、炭素濃度が2×1016atoms/cm3以上であり、200nm以上400nm以下の厚さを有する単一の第2のGaN層と、
を備え、
前記第2のGaN層にチャネルが形成され、
前記第1のGaN層の厚さと前記第2のGaN層の厚さとの合計値が400nm以上、500nm以下である、
高電子移動度トランジスタ。
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US15/065,532 US20160268411A1 (en) | 2015-03-10 | 2016-03-09 | High electron mobility transistor (hemt) and method of producing the same |
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