JP5646044B2 - 炭化珪素半導体装置およびその製造方法 - Google Patents
炭化珪素半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP5646044B2 JP5646044B2 JP2013506829A JP2013506829A JP5646044B2 JP 5646044 B2 JP5646044 B2 JP 5646044B2 JP 2013506829 A JP2013506829 A JP 2013506829A JP 2013506829 A JP2013506829 A JP 2013506829A JP 5646044 B2 JP5646044 B2 JP 5646044B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- layer
- semiconductor device
- gate
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 93
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 85
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 85
- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 239000000758 substrate Substances 0.000 claims description 44
- 239000012535 impurity Substances 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 150000003377 silicon compounds Chemical class 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 91
- 230000015556 catabolic process Effects 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 229910052814 silicon oxide Inorganic materials 0.000 description 19
- 238000010586 diagram Methods 0.000 description 17
- 238000002513 implantation Methods 0.000 description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 9
- 238000000137 annealing Methods 0.000 description 7
- 241000894007 species Species 0.000 description 7
- 238000001459 lithography Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 240000004050 Pentaglottis sempervirens Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8213—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using SiC technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Power Conversion In General (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (13)
- 炭化珪素基板に設けられた第1導電型のドレイン層と、
前記ドレイン層上に形成された前記第1導電型の炭化珪素層と、
前記炭化珪素層に形成された複数のトレンチと、
前記トレンチに挟まれた領域であって、当該領域の前記炭化珪素層の表面に形成された前記第1導電型のソース層と、
前記トレンチの側面に形成された、前記第1導電型と反対の導電型の第2導電型のゲート層と、
前記トレンチの底部に形成された、前記第2導電型の半導体層と、
前記炭化珪素基板の裏面に形成された第1の電極と、
前記ソース層と前記半導体層とに接続された第2の電極と、
前記ゲート層に接続された第3の電極と、を備え、
前記ゲート層の前記ドリフト層側の端部が、前記トレンチの底面よりも前記炭化珪素基板の表面側に形成されていることを特徴とする炭化珪素半導体装置。 - 請求項1記載の炭化珪素半導体装置において、
前記端部と前記トレンチの底面までの距離が0.5μm以上あることを特徴とする炭化珪素半導体装置。 - 請求項1記載の炭化珪素半導体装置において、
さらに、前記ゲート層と前記半導体層との間に、前記炭化珪素層よりも高い不純物濃度の前記第1導電型の半導体層を備えることを特徴とする炭化珪素半導体装置。 - 請求項1記載の炭化珪素半導体装置において、
前記半導体層は、前記トレンチの底面の底全体に形成されていることを特徴とする炭化珪素半導体装置。 - 請求項1記載の炭化珪素半導体装置において、
前記トレンチの底面中央部の前記炭化珪素層と前記第2の電極との間でショットキー接合を成すショットキー接合部があり、前記半導体層は、前記ショットキー接合部を挟んで配置されていることを特徴とする炭化珪素半導体装置。 - 請求項5記載の炭化珪素半導体装置において、
前記ショットキー接合を成す金属はチタン、モリブデン、ニッケル、またはこれらのシリコン化合物のいずれかであることを特徴とする炭化珪素半導体装置。 - 請求項1記載の炭化珪素半導体装置において、
前記第1導電型はn型で、前記第2導電型はp型であることを特徴とする炭化珪素半導体装置。 - 第1導電型のドレイン層上に形成された前記第1導電型の炭化珪素層を備えた炭化珪素基板であって、前記炭化珪素層の表面に、前記炭化珪素層の不純物濃度よりも高い濃度の前記第1導電型のソース層を形成する工程と、
前記炭化珪素層の表面に複数のトレンチを形成する工程と、
前記複数のトレンチの夫々の側壁に前記第1導電型と反対の導電型の第2導電型のゲート層を形成する工程と、
前記ゲート層を形成した後に、前記複数のトレンチをエッチングすることでさらに深いトレンチを形成する工程と、
前記複数の深いトレンチの夫々の底部に前記第2導電型の半導体層を形成する工程と、
前記炭化珪素基板の裏面に第1の電極を形成する工程と、
前記ソース層及び前記半導体層に接続する第2の電極を形成する工程と、
前記ゲート層と接続する第3の電極を形成する工程と、を備えることを特徴とする炭化珪素半導体装置の製造方法。 - 請求項8記載の炭化珪素半導体装置の製造方法において、
前記エッチングは0.5μm以上行うことを特徴とする炭化珪素半導体装置の製造方法。 - 請求項8記載の炭化珪素半導体装置の製造方法において、
さらに、前記エッチングによって露出した深いトレンチの側壁に、前記炭化珪素層よりも高い不純物濃度の前記第1導電型の半導体層を形成する工程を備えることを特徴とする炭化珪素半導体装置の製造方法。 - 第1導電型のドレイン層上に形成された前記第1導電型の炭化珪素層を備えた炭化珪素基板であって、前記炭化珪素層の表面に、前記炭化珪素層の不純物濃度よりも高い濃度の前記第1導電型のソース層を形成する工程と、
前記炭化珪素層の表面に複数のトレンチを形成する工程と、
前記複数のトレンチの夫々の側壁に前記第1導電型と反対の導電型の第2導電型のゲート層を形成する工程と、
前記ゲート層を形成した後に、前記複数のトレンチをエッチングすることでさらに深いトレンチを形成する工程と、
前記複数の深いトレンチの夫々の底部の外周部に前記第2導電型の半導体層を形成する工程と、
前記複数の深いトレンチの夫々の前記半導体層に挟まれた領域に、ショットキー接合を形成する工程と、
前記炭化珪素基板の裏面に第1の電極を形成する工程と、
前記ソース層、前記半導体層および前記ショットキー接合に接続する第2の電極を形成する工程と、
前記ゲート層と接続する第3の電極を形成する工程と、を備えることを特徴とする炭化珪素半導体装置の製造方法。 - 請求項11記載の炭化珪素半導体装置の製造方法において、
前記エッチングは0.5μm以上行うことを特徴とする炭化珪素半導体装置の製造方法。 - 請求項11記載の炭化珪素半導体装置の製造方法において、
さらに、前記エッチングによって露出した深いトレンチの側壁に、前記炭化珪素層よりも高い不純物濃度の前記第1導電型の半導体層を形成する工程を備えることを特徴とする炭化珪素半導体装置の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2011/001886 WO2012131768A1 (ja) | 2011-03-30 | 2011-03-30 | 炭化珪素半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2012131768A1 JPWO2012131768A1 (ja) | 2014-07-24 |
JP5646044B2 true JP5646044B2 (ja) | 2014-12-24 |
Family
ID=46929620
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013506829A Expired - Fee Related JP5646044B2 (ja) | 2011-03-30 | 2011-03-30 | 炭化珪素半導体装置およびその製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5646044B2 (ja) |
WO (1) | WO2012131768A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109791951A (zh) * | 2016-09-09 | 2019-05-21 | 美国联合碳化硅公司 | 具有改进的阈值电压控制的沟槽垂直jfet |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6073719B2 (ja) * | 2013-03-21 | 2017-02-01 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
CN105493291A (zh) * | 2013-06-06 | 2016-04-13 | 美国联合碳化硅公司 | 沟槽屏蔽连接结型场效应晶体管 |
WO2016042621A1 (ja) * | 2014-09-17 | 2016-03-24 | 株式会社日立製作所 | 半導体装置、インバータモジュール、インバータ、鉄道車両、および半導体装置の製造方法 |
US20180012974A1 (en) | 2014-11-18 | 2018-01-11 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
US20170018657A1 (en) | 2015-07-14 | 2017-01-19 | United Silicon Carbide, Inc. | Vertical jfet made using a reduced mask set |
US10050154B2 (en) | 2015-07-14 | 2018-08-14 | United Silicon Carbide, Inc. | Trench vertical JFET with ladder termination |
JP7024688B2 (ja) * | 2018-11-07 | 2022-02-24 | 株式会社デンソー | 半導体装置 |
EP4029139A4 (en) | 2019-09-13 | 2023-09-27 | Milwaukee Electric Tool Corporation | CURRENT TRANSFORMER WITH WIDE BANDGAP SEMICONDUCTORS |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003068760A (ja) * | 2001-08-29 | 2003-03-07 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP2004063507A (ja) * | 2002-07-24 | 2004-02-26 | Sumitomo Electric Ind Ltd | 縦型接合型電界効果トランジスタ、及び縦型接合型電界効果トランジスタの製造方法 |
US20100003573A1 (en) * | 2007-07-18 | 2010-01-07 | Stmicroelectronics S.A. | Method for processing portions of walls of an opening formed in a silicon substrate |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5396085A (en) * | 1993-12-28 | 1995-03-07 | North Carolina State University | Silicon carbide switching device with rectifying-gate |
JP4839548B2 (ja) * | 2001-08-29 | 2011-12-21 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
JP4114390B2 (ja) * | 2002-04-23 | 2008-07-09 | 株式会社デンソー | 半導体装置及びその製造方法 |
-
2011
- 2011-03-30 WO PCT/JP2011/001886 patent/WO2012131768A1/ja active Application Filing
- 2011-03-30 JP JP2013506829A patent/JP5646044B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003068760A (ja) * | 2001-08-29 | 2003-03-07 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP2004063507A (ja) * | 2002-07-24 | 2004-02-26 | Sumitomo Electric Ind Ltd | 縦型接合型電界効果トランジスタ、及び縦型接合型電界効果トランジスタの製造方法 |
US20100003573A1 (en) * | 2007-07-18 | 2010-01-07 | Stmicroelectronics S.A. | Method for processing portions of walls of an opening formed in a silicon substrate |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109791951A (zh) * | 2016-09-09 | 2019-05-21 | 美国联合碳化硅公司 | 具有改进的阈值电压控制的沟槽垂直jfet |
Also Published As
Publication number | Publication date |
---|---|
JPWO2012131768A1 (ja) | 2014-07-24 |
WO2012131768A1 (ja) | 2012-10-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5646044B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP6049784B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP6021032B2 (ja) | 半導体素子およびその製造方法 | |
JP5449094B2 (ja) | 半導体装置 | |
US9087911B2 (en) | Trench shield connected JFET | |
US9324782B2 (en) | Semiconductor device | |
US9029874B2 (en) | Semiconductor device having a first silicon carbide semiconductor layer and a second silicon carbide semiconductor layer | |
JPWO2014122919A1 (ja) | 絶縁ゲート型炭化珪素半導体装置及びその製造方法 | |
JP6109444B1 (ja) | 半導体装置 | |
JP2010147405A (ja) | 半導体装置およびその製造方法 | |
CN110291620B (zh) | 半导体装置及半导体装置的制造方法 | |
JPWO2015015808A1 (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP2023001343A (ja) | 半導体装置 | |
JP7029711B2 (ja) | 半導体装置 | |
US7772613B2 (en) | Semiconductor device with large blocking voltage and method of manufacturing the same | |
JP2024096464A (ja) | 半導体装置 | |
JP2024019464A (ja) | 半導体装置 | |
WO2015111177A1 (ja) | 半導体装置,パワーモジュール,電力変換装置,および鉄道車両 | |
JP7476502B2 (ja) | 半導体装置 | |
JPWO2013001677A1 (ja) | 半導体装置とその製造方法 | |
JP2017092364A (ja) | 半導体装置および半導体装置の製造方法 | |
WO2020021298A1 (ja) | 半導体装置及びその製造方法 | |
JP7451981B2 (ja) | 半導体装置 | |
JP7371426B2 (ja) | 半導体装置 | |
CN114725219A (zh) | 碳化硅沟槽栅晶体管及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140819 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140910 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20141007 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141104 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5646044 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
LAPS | Cancellation because of no payment of annual fees |