JP6109444B1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6109444B1 JP6109444B1 JP2016560021A JP2016560021A JP6109444B1 JP 6109444 B1 JP6109444 B1 JP 6109444B1 JP 2016560021 A JP2016560021 A JP 2016560021A JP 2016560021 A JP2016560021 A JP 2016560021A JP 6109444 B1 JP6109444 B1 JP 6109444B1
- Authority
- JP
- Japan
- Prior art keywords
- stripe
- region
- trench
- gate electrode
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 83
- 239000010410 layer Substances 0.000 claims abstract description 216
- 238000009792 diffusion process Methods 0.000 claims abstract description 91
- 230000001681 protective effect Effects 0.000 claims abstract description 91
- 239000011229 interlayer Substances 0.000 claims abstract description 47
- 239000012535 impurity Substances 0.000 claims description 35
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 description 43
- 239000000758 substrate Substances 0.000 description 25
- 238000004519 manufacturing process Methods 0.000 description 23
- 230000005684 electric field Effects 0.000 description 18
- 239000000463 material Substances 0.000 description 17
- 230000004048 modification Effects 0.000 description 16
- 238000012986 modification Methods 0.000 description 16
- 230000015556 catabolic process Effects 0.000 description 14
- 238000005530 etching Methods 0.000 description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 238000002513 implantation Methods 0.000 description 9
- 230000004044 response Effects 0.000 description 8
- 230000001629 suppression Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000000007 visual effect Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000001052 transient effect Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003031 high energy carrier Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
半導体装置は、交差トレンチと、交差ゲート電極とをさらに有している。交差トレンチは、活性ストライプ領域において長手方向と交差する方向に延在しており、断面視において、ソース領域およびベース領域を貫きドリフト層に達する1対の側壁を有している。交差ゲート電極は交差トレンチ内にゲート絶縁膜を介して設けられている。複数のストライプゲート電極は、長手方向には連続して延びている。複数のストライプゲート電極のうち、長手方向に垂直な方向において活性ストライプ領域を挟んで隣接する2つの部分が、交差ゲート電極によって互いに接続されている。
図1および図2の各々は、本実施の形態におけるMOSFET901(半導体装置)の構成を概略的に示す部分断面図である。図1の視野は図2の線I−Iに沿っており、図2の視野は図1の線II−IIに沿っている。
図16および図17の各々は、本実施の形態におけるMOSFET908(半導体装置)の構成を概略的に示す部分断面図である。図16の視野は図17の線XVI−XVIに沿っており、図17の視野は図16の線XVII−XVIIに沿っている。なお図16の視野は図2のものと同様であり、図17の視野は図1のものと同様である。
図18および図19の各々は、本実施の形態におけるMOSFET909(半導体装置)の構成を概略的に示す部分断面図である。図18の視野は図19の線XVIII−XVIIIに沿っており、図19の視野は図18の線XIX−XIXに沿っている。なお図18の視野は図2のものと同様であり、図19の視野は図1のものと同様である。
図21は、本実施の形態におけるMOSFET911(半導体装置)の構成を概略的に示す部分断面図である。なお図21の視野は図1のものと同様である。
Claims (11)
- 第1導電型のドリフト層と、
前記ドリフト層上に設けられた第2導電型のベース領域と、
前記ベース領域によって前記ドリフト層から隔てられ、前記ベース領域上に設けられた第1導電型のソース領域と、
断面視において前記ソース領域および前記ベース領域を貫き前記ドリフト層に達する1対の側壁を各々が有し、平面視においてストライプ状に延在する複数のストライプトレンチと、
前記ドリフト層に接し前記ストライプトレンチの底部に設けられた第2導電型の保護拡散層と、
前記ストライプトレンチの前記1対の側壁の各々に隣接することで前記ベース領域および前記ソース領域を覆うゲート絶縁膜と、
前記ストライプトレンチ内において前記ゲート絶縁膜を介して前記ベース領域と隣接する第1側面と、前記第1側面と反対の第2側面と、前記第1側面と前記第2側面とをつなぐ上面とを有する複数のストライプゲート電極と、
前記ストライプゲート電極の前記第2側面および上面の各々を前記ゲート絶縁膜の厚みよりも大きな厚みで覆い、前記ストライプトレンチの外側で前記ソース領域および前記ベース領域につながる第1コンタクトホールと、前記ストライプトレンチ内で前記保護拡散層につながる第2コンタクトホールとが設けられた層間絶縁膜と、
前記ソース領域、前記ベース領域、および前記保護拡散層に接続されたソース電極と、
を備え、
平面視において、長手方向に延在する複数の活性ストライプ領域と、前記長手方向に延在する複数のコンタクトストライプ領域とが存在し、前記活性ストライプ領域と前記コンタクトストライプ領域とが前記長手方向と垂直な方向に交互に繰り返し配置されることによってストライプパターンが設けられており、前記活性ストライプ領域と前記コンタクトストライプ領域とは前記ストライプゲート電極によって区切られており、
前記活性ストライプ領域の各々において、前記ソース電極が前記層間絶縁膜の第1コンタクトホールを通して前記ソース領域と前記ベース領域とに接続されており、かつ、前記ストライプトレンチ内において前記ストライプゲート電極の前記第1側面が前記ゲート絶縁膜を介して前記ベース領域と隣接することで前記ストライプゲート電極によってスイッチング可能なチャネルが形成されており、
前記コンタクトストライプ領域の各々において、前記ソース電極が前記層間絶縁膜の第2コンタクトホールを通して前記保護拡散層に接続されており、前記第2コンタクトホールはストライプ状であり、
前記活性ストライプ領域において前記長手方向と交差する方向に延在し、断面視において、前記ソース領域および前記ベース領域を貫き前記ドリフト層に達する1対の側壁を有する交差トレンチと、
前記交差トレンチ内に前記ゲート絶縁膜を介して設けられた交差ゲート電極と、
をさらに備え、
前記複数のストライプゲート電極は、前記長手方向には連続して延びており、
前記複数のストライプゲート電極のうち、前記長手方向に垂直な方向において前記活性ストライプ領域を挟んで隣接する2つの部分が、前記交差ゲート電極によって互いに接続されている、
半導体装置。 - 前記活性ストライプ領域と前記コンタクトストライプ領域との間において、前記ソース電極から離れて前記ストライプトレンチの前記底部から突出しかつ互いに反対の1対の側面を有する支持領域をさらに備え、
前記ストライプゲート電極は前記支持領域の前記1対の側面の各々に隣接する部分を有する、
請求項1に記載の半導体装置。 - 前記支持領域は前記保護拡散層上に配置されている、請求項2に記載の半導体装置。
- 複数のストライプトレンチのうち互いに隣り合う2つのものの間に設けられ、前記ソース領域および前記ベース領域を貫き前記ドリフト層に達する中間トレンチと、
前記中間トレンチ内において前記ゲート絶縁膜を介して前記ベース領域と隣接する中間ゲート電極と、
をさらに備える、
請求項1に記載の半導体装置。 - 前記中間トレンチの深さは前記ストライプトレンチの深さより小さく、前記保護拡散層は前記中間トレンチの底部に配置されていない、請求項4に記載の半導体装置。
- 前記中間トレンチの深さは前記ストライプトレンチの深さより小さく、前記保護拡散層は、前記ストライプトレンチの底部に配置された第1部分と、前記中間トレンチの底部に配置され前記第1部分の不純物濃度よりも低い不純物濃度を有する第2部分とを含む、請求項4に記載の半導体装置。
- 第1導電型のドリフト層と、
前記ドリフト層上に設けられた第2導電型のベース領域と、
前記ベース領域によって前記ドリフト層から隔てられ、前記ベース領域上に設けられた第1導電型のソース領域と、
断面視において前記ソース領域および前記ベース領域を貫き前記ドリフト層に達する1対の側壁を各々が有し、平面視においてストライプ状に延在する複数のストライプトレンチと、
前記ドリフト層に接し前記ストライプトレンチの底部に設けられた第2導電型の保護拡散層と、
前記ストライプトレンチの前記1対の側壁の各々に隣接することで前記ベース領域および前記ソース領域を覆うゲート絶縁膜と、
前記ストライプトレンチ内において前記ゲート絶縁膜を介して前記ベース領域と隣接する第1側面と、前記第1側面と反対の第2側面と、前記第1側面と前記第2側面とをつなぐ上面とを有するストライプゲート電極と、
前記ストライプゲート電極の前記第2側面および上面の各々を前記ゲート絶縁膜の厚みよりも大きな厚みで覆い、前記ストライプトレンチの外側で前記ソース領域および前記ベース領域につながる第1コンタクトホールと、前記ストライプトレンチ内で前記保護拡散層につながる第2コンタクトホールとが設けられた層間絶縁膜と、
前記ソース領域、前記ベース領域、および前記保護拡散層に接続されたソース電極と、
を備え、
平面視において、長手方向に延在する複数の活性ストライプ領域と、前記長手方向に延在する複数のコンタクトストライプ領域とが存在し、前記活性ストライプ領域と前記コンタクトストライプ領域とが前記長手方向と垂直な方向に交互に繰り返し配置されることによってストライプパターンが設けられており、前記活性ストライプ領域と前記コンタクトストライプ領域とは前記ストライプゲート電極によって区切られており、
前記活性ストライプ領域の各々において、前記ソース電極が前記層間絶縁膜の第1コンタクトホールを通して前記ソース領域と前記ベース領域とに接続されており、かつ、前記ストライプトレンチ内において前記ストライプゲート電極の前記第1側面が前記ゲート絶縁膜を介して前記ベース領域と隣接することで前記ストライプゲート電極によってスイッチング可能なチャネルが形成されており、
前記コンタクトストライプ領域の各々において、前記ソース電極が前記層間絶縁膜の第2コンタクトホールを通して前記保護拡散層に接続されており、
前記活性ストライプ領域と前記コンタクトストライプ領域とが交互に繰り返し配置される第1の列と第2の列とが存在し、
前記第1の列の前記活性ストライプ領域と前記第2の列の前記コンタクトストライプ領域とが前記長手方向に向かい合い、
前記第1の列の前記コンタクトストライプ領域と前記第2の列の前記活性ストライプ領域とが前記長手方向に向かい合う、
半導体装置。 - 前記層間絶縁膜は平面視において、前記ストライプトレンチ内に設けられており、前記ソース領域上には設けられていない、請求項1または7に記載の半導体装置。
- 前記保護拡散層の前記第2導電型の不純物濃度は、前記ベース領域の前記第2導電型の不純物濃度よりも高い、請求項1から8のいずれか1項に記載の半導体装置。
- 前記コンタクトストライプ領域において、前記ソース電極から離れて前記ストライプトレンチの前記底部から突出したダミー領域をさらに備え、
前記ストライプゲート電極が前記ダミー領域の側面に隣接する部分を有することによって、前記ストライプゲート電極のうち、前記長手方向に垂直な方向において前記コンタクトストライプ領域の1つを挟んで隣接する2つの部分が互いに接続されている、
請求項1から9のいずれか1項に記載の半導体装置。 - 前記ドリフト層はワイドバンドギャップ半導体から作られている、請求項1から10のいずれか1項に記載の半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015204247 | 2015-10-16 | ||
JP2015204247 | 2015-10-16 | ||
PCT/JP2016/069002 WO2017064887A1 (ja) | 2015-10-16 | 2016-06-27 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6109444B1 true JP6109444B1 (ja) | 2017-04-05 |
JPWO2017064887A1 JPWO2017064887A1 (ja) | 2017-10-12 |
Family
ID=58517923
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016560021A Active JP6109444B1 (ja) | 2015-10-16 | 2016-06-27 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10468487B2 (ja) |
JP (1) | JP6109444B1 (ja) |
CN (1) | CN108140674B (ja) |
DE (1) | DE112016004718B4 (ja) |
WO (1) | WO2017064887A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112017002221T5 (de) * | 2016-04-27 | 2019-01-10 | Mitsubishi Electric Corporation | Halbleiterbauelement und Leistungswandlervorrichtung |
DE112018007114T5 (de) * | 2018-02-19 | 2020-10-29 | Mitsubishi Electric Corporation | Siliciumcarbid-halbleitereinheit |
JP7051641B2 (ja) * | 2018-08-24 | 2022-04-11 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
WO2020121371A1 (ja) * | 2018-12-10 | 2020-06-18 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2021034726A (ja) * | 2019-08-13 | 2021-03-01 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP7242489B2 (ja) * | 2019-09-18 | 2023-03-20 | 株式会社東芝 | 半導体装置 |
CN115769382A (zh) | 2021-01-25 | 2023-03-07 | 富士电机株式会社 | 半导体装置 |
CN116741825A (zh) * | 2022-03-02 | 2023-09-12 | 华为数字能源技术有限公司 | 一种SiC MOSFET、其制备方法及集成电路 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012164916A (ja) * | 2011-02-09 | 2012-08-30 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2014127547A (ja) * | 2012-12-26 | 2014-07-07 | Nissan Motor Co Ltd | 半導体装置の製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2941405B2 (ja) | 1990-10-25 | 1999-08-25 | 株式会社東芝 | 半導体装置 |
JP2682272B2 (ja) | 1991-06-27 | 1997-11-26 | 三菱電機株式会社 | 絶縁ゲート型トランジスタ |
WO1998035390A1 (en) | 1997-02-07 | 1998-08-13 | Cooper James Albert Jr | Structure for increasing the maximum voltage of silicon carbide power transistors |
US6392273B1 (en) | 2000-01-14 | 2002-05-21 | Rockwell Science Center, Llc | Trench insulated-gate bipolar transistor with improved safe-operating-area |
US6621107B2 (en) * | 2001-08-23 | 2003-09-16 | General Semiconductor, Inc. | Trench DMOS transistor with embedded trench schottky rectifier |
US7592650B2 (en) * | 2005-06-06 | 2009-09-22 | M-Mos Semiconductor Sdn. Bhd. | High density hybrid MOSFET device |
JP4453671B2 (ja) | 2006-03-08 | 2010-04-21 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置およびその製造方法 |
JP5303839B2 (ja) | 2007-01-29 | 2013-10-02 | 富士電機株式会社 | 絶縁ゲート炭化珪素半導体装置とその製造方法 |
US20110121387A1 (en) * | 2009-11-23 | 2011-05-26 | Francois Hebert | Integrated guarded schottky diode compatible with trench-gate dmos, structure and method |
JP5619152B2 (ja) * | 2010-04-26 | 2014-11-05 | 三菱電機株式会社 | 半導体装置 |
DE112011104322T5 (de) | 2010-12-10 | 2013-10-02 | Mitsubishi Electric Corporation | Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung |
BR112013027105B1 (pt) | 2011-04-19 | 2021-01-12 | Nissan Motor Co., Ltd. | dispositivo semicondutor |
JP6061181B2 (ja) | 2012-08-20 | 2017-01-18 | ローム株式会社 | 半導体装置 |
WO2014103257A1 (ja) * | 2012-12-28 | 2014-07-03 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
US9741797B2 (en) * | 2013-02-05 | 2017-08-22 | Mitsubishi Electric Corporation | Insulated gate silicon carbide semiconductor device and method for manufacturing same |
-
2016
- 2016-06-27 US US15/754,599 patent/US10468487B2/en active Active
- 2016-06-27 JP JP2016560021A patent/JP6109444B1/ja active Active
- 2016-06-27 CN CN201680059211.XA patent/CN108140674B/zh active Active
- 2016-06-27 DE DE112016004718.5T patent/DE112016004718B4/de active Active
- 2016-06-27 WO PCT/JP2016/069002 patent/WO2017064887A1/ja active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012164916A (ja) * | 2011-02-09 | 2012-08-30 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2014127547A (ja) * | 2012-12-26 | 2014-07-07 | Nissan Motor Co Ltd | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN108140674A (zh) | 2018-06-08 |
CN108140674B (zh) | 2021-02-19 |
DE112016004718T5 (de) | 2018-06-28 |
WO2017064887A1 (ja) | 2017-04-20 |
DE112016004718B4 (de) | 2022-12-08 |
US20180248008A1 (en) | 2018-08-30 |
US10468487B2 (en) | 2019-11-05 |
JPWO2017064887A1 (ja) | 2017-10-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6109444B1 (ja) | 半導体装置 | |
JP5565461B2 (ja) | 半導体装置 | |
JP6099749B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP2017092368A (ja) | 半導体装置および半導体装置の製造方法 | |
JP6725055B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP7176239B2 (ja) | 半導体装置 | |
JP6848382B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP2018107168A (ja) | 半導体装置および半導体装置の製造方法 | |
JP5646044B2 (ja) | 炭化珪素半導体装置およびその製造方法 | |
JP6345378B1 (ja) | 半導体装置 | |
CN111512448B (zh) | 半导体装置 | |
JP7006280B2 (ja) | 半導体装置 | |
JPWO2017047286A1 (ja) | 半導体装置 | |
JP2018110164A (ja) | 半導体装置 | |
JP7057555B2 (ja) | 半導体装置 | |
JP2019003967A (ja) | 半導体装置および半導体装置の製造方法 | |
JP2020043243A (ja) | 半導体装置 | |
JP2017092355A (ja) | 半導体装置および半導体装置の製造方法 | |
JP7155641B2 (ja) | 半導体装置 | |
TWI741185B (zh) | 半導體裝置及半導體裝置之製造方法 | |
JP6207627B2 (ja) | 半導体装置 | |
CN112466922A (zh) | 半导体装置 | |
JP2019033140A (ja) | 半導体装置および半導体装置の製造方法 | |
JP2013251467A (ja) | 半導体装置および半導体装置の製造方法 | |
JP2017092364A (ja) | 半導体装置および半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170120 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170207 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170307 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6109444 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |