JP5565461B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5565461B2 JP5565461B2 JP2012512886A JP2012512886A JP5565461B2 JP 5565461 B2 JP5565461 B2 JP 5565461B2 JP 2012512886 A JP2012512886 A JP 2012512886A JP 2012512886 A JP2012512886 A JP 2012512886A JP 5565461 B2 JP5565461 B2 JP 5565461B2
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- 229910052782 aluminium Inorganic materials 0.000 description 2
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- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- 230000001133 acceleration Effects 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- 239000010432 diamond Substances 0.000 description 1
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
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- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
Description
図1、図2A、図2B、図2C及び図2Dを参照して、本発明の第1の実施の形態に係わる半導体装置の構成を説明する。
次に、図1、図2A、図2B、図2C及び図2Dに示した半導体装置の基本的な動作について説明する。ここでは、MOS型電界効果トランジスタ(MOSFET)としての動作と、ショットキー・バリア・ダイオード(SBD)としての動作をそれぞれ説明する。
次に、図3〜図20Bを参照して、本発明の第1の実施の形態に係わる半導体装置の製造方法を説明する。
図21A〜図21Cを参照して、本発明の第2の実施の形態に係わる半導体装置の構成を説明する。図21A〜図21Cは、本発明の第2の実施の形態に係わる半導体装置のA−A’切断面、C−C’切断面及びD−D’切断面における断面構成をそれぞれ示す。平面図に関しては図1と同じであるため図示を省略する。また、B−B’切断面における半導体装置の断面構成は、図2Bと同じであるため、図示を省略する。
図22Aは、一主表面FSの法線方向から見た時の、第1のウェル領域3、絶縁ゲート部(6、7、8)、ショットキー接合箇所13、ウェルコンタクト領域4、ソース領域5の配置を示す。第1の主電極(9、11、12)は図示していない。
図22Bに、図22Aにおける絶縁ゲート部(6〜8)の間隔を狭めた第1の変形例を示す。図22BのP−Q間は、X軸方向の単位セルであり、R−S間はY軸方向の単位セルである。図22Aに示した範囲外の部分においては、X軸方向及びY軸方向の単位セルがそれぞれ繰り返されている。
図24は、一主表面FSの法線方向から見た時の、第1のウェル領域3、絶縁ゲート部(6、7、8)、ショットキー接合箇所13、ウェルコンタクト領域4、ソース領域5の配置を示す。第1の主電極(9、11、12)は図示していない。
図26は、一主表面FSの法線方向から見た時の、第1のウェル領域3、第2のウェル領域14、絶縁ゲート部(6、7、8)、ショットキー接合箇所13、ウェルコンタクト領域4、ソース領域5の配置を示す。第1の主電極(9、11、12)は図示していない。
図28は、一主表面FSの法線方向から見た時の、オーミック電極9及びショットキー電極11の配置を示す。ソース電極12は図示していない。
第7の実施の形態では、第6の実施の形態で述べた第1の実施の形態に対する同様な変更を、第3の実施の形態に係わる半導体装置に対して加えた場合について説明する。
第8の実施の形態では、第6の実施の形態で述べた第1の実施の形態に対する同様な変更を、第4の実施の形態に係わる半導体装置に対して加えた場合について説明する。
第9の実施の形態では、第6の実施の形態におけるショットキー電極11の代りに、一主表面FSに表出したドリフト領域2にヘテロ接合されたヘテロ電極15を備える半導体装置について説明する。
また、第9の実施の形態における構成に、第2の実施の形態で述べたY軸方向のチャネル長をZ軸方向のチャネル長より長くする構成を適用してもよい。これにより、ドリフト領域2の一主表面FSの法線に平行な方向(Z軸方向)におけるチャネル形成の閾値電圧を、ドリフト領域2の一主表面FSの法線に垂直な方向(Y軸方向)におけるチャネル形成の閾値電圧よりも高くすることができる。よって、チャネルを流れるオン電流が、狭い領域(L3部分)に集中することを抑制することができるので、破壊耐性、信頼性、歩留まりが高い半導体装置を提供することができる。
上記のように、本発明は、9つの実施形態及びその変形例によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかとなろう。すなわち、本発明はここでは記載していない様々な実施の形態等を包含するということを理解すべきである。
2:ドリフト領域
3:第1のウェル領域
4:ウェルコンタクト領域
5:ソース領域
6:ゲート絶縁膜(絶縁ゲート部)
7:ゲート電極(絶縁ゲート部)
8:層間絶縁膜(絶縁ゲート部)
9:オーミック電極(第1の主電極)
10:ドレイン電極(第2の主電極)
11:ショットキー電極(第1の主電極)
12:ソース電極(第1の主電極)
13:ショットキー接合領域
14:第2のウェル領域
15:ヘテロ電極(第1の主電極)
P−Q:X軸方向の単位セル
R−S:Y軸方向の単位セル
Claims (11)
- 半導体基体と、
前記半導体基体の上に配置された第1導電型のドリフト領域と、
前記ドリフト領域の内部に配置され、且つその一部が前記ドリフト領域の一主表面に表出した第2導電型の第1のウェル領域と、
前記第1のウェル領域の内部に配置され、且つその一部が前記一主表面に表出した第1導電型のソース領域と、
前記ドリフト領域と前記ソース領域の間に位置する前記第1のウェル領域に、第1導電型に反転したチャネルを形成する3つ以上の絶縁ゲート部と、
ユニポーラダイオードを構成するように、前記一主表面に表出した前記ドリフト領域に接合され、且つ前記第1のウェル領域及び前記ソース領域に接続された第1の主電極と、を備え、
前記一主表面の法線方向から見て、前記3つ以上の絶縁ゲート部は互いに平行な線状パターンを有し、且つ、隣接する絶縁ゲート部の間に、前記第1の主電極が前記ドリフト領域に接合された接合箇所及び前記第1のウェル領域が、絶縁ゲート部が伸びる方向に沿って交互に配列され、且つ、前記第1の主電極が前記ドリフト領域に接合された接合箇所及び前記第1のウェル領域は、絶縁ゲート部が伸びる方向に垂直な方向に沿って、前記絶縁ゲート部に分断されつつそれぞれ一列に配列され、
前記チャネルは、前記一主表面の法線方向及び前記一主表面の法線に垂直な方向に形成され、
前記一主表面の法線に垂直な方向に形成される前記チャネルの長さは、前記一主表面の法線方向に形成される前記チャネルの長さよりも長い
ことを特徴とする半導体装置。 - 前記ドリフト領域の上部の一部分に前記第1のウェル領域が配置され、
前記第1のウェル領域の上部の一部分に前記ソース領域が配置され、
前記第1の主電極は前記ドリフト領域の一主表面の上に配置され、
前記一主表面の法線に垂直な方向における前記ソース領域と前記ドリフト領域との距離は、前記一主表面の法線方向における前記ソース領域と前記ドリフト領域との距離よりも長いことを特徴とする請求項1に記載の半導体装置。 - 前記絶縁ゲート部が伸びる方向に沿って隣接する2つの前記第1のウェル領域の間の距離は、前記ドリフト領域と前記第1の主電極の間に、前記ユニポーラダイオードの逆方向の所定の電圧を印加した場合、前記隣接する2つの第1のウェル領域の外周からそれぞれ前記ドリフト領域へ広がる空乏層が互いに重なる距離であることを特徴とする請求項1又は2に記載の半導体装置。
- 前記一主表面の法線に垂直な方向に沿って伸びる前記チャネルの一部分に形成された、前記第1のウェル領域よりも高濃度の第2導電型の不純物が添加されたウェルコンタクト領域を更に備えることを特徴とする請求項1〜3のいずれか一項に記載の半導体装置。
- 前記第1のウェル領域の内部であって前記ソース領域とは異なる箇所に配置され、且つその一部が前記一主表面に表出して前記第1の主電極に接続された第2導電型の複数のウェルコンタクト領域を更に備え、
前記複数のウェルコンタクト領域は、前記絶縁ゲート部が伸びる方向に交差し、且つ互いに平行な線状パターンを有することを特徴とする請求項1〜3のいずれか一項に記載の半導体装置。 - 前記ウェルコンタクト領域は前記ドリフト領域と前記第1のウェル領域の境界に配置されていることを特徴とする請求項5に記載の半導体装置。
- 前記複数のソース領域は、前記絶縁ゲート部が伸びる方向に交差し、且つ互いに平行な線状パターンを有することを特徴とする請求項5又は6に記載の半導体装置。
- 前記絶縁ゲート部と前記ドリフト領域の境界に配置され、且つ前記第1の主電極に接続された第2導電型の第2のウェル領域を更に有することを特徴とする請求項1〜7のいずれか一項に記載の半導体装置。
- 前記ドリフト領域は炭化珪素からなり、前記第1の主電極は、前記一主表面に表出した前記ドリフト領域にショットキー接合されたショットキー電極を有し、前記ユニポーラダイオードはショットキー接合ダイオードであることを特徴とする請求項1〜8のいずれか一項に記載の半導体装置。
- 前記ドリフト領域は炭化珪素からなり、前記第1の主電極は、前記一主表面に表出した前記ドリフト領域にヘテロ接合されたヘテロ電極を有し、前記ヘテロ電極は、前記ドリフト領域よりもエネルギーバンドギャップが狭い半導体からなり、前記ユニポーラダイオードはヘテロ接合ダイオードであることを特徴とする請求項1〜8のいずれか一項に記載の半導体装置。
- 前記ユニポーラダイオードは、前記ドリフト領域と前記第1のウェル領域との間、或いは前記第1のウェル領域と前記ソース領域との間に形成されるPNダイオードのオン電圧よりも低いオン電圧で動作することを特徴とする請求項1〜10のいずれか一項に記載の半導体装置。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11411084B2 (en) | 2020-07-09 | 2022-08-09 | Kabushiki Kaisha Toshiba | Semiconductor device, inverter circuit, drive device, vehicle, and elevator |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6633120B2 (en) * | 1998-11-19 | 2003-10-14 | Unisplay S.A. | LED lamps |
JP2014157896A (ja) * | 2013-02-15 | 2014-08-28 | Toyota Central R&D Labs Inc | 半導体装置とその製造方法 |
US9425153B2 (en) * | 2013-04-04 | 2016-08-23 | Monolith Semiconductor Inc. | Semiconductor devices comprising getter layers and methods of making and using the same |
JP6036765B2 (ja) * | 2014-08-22 | 2016-11-30 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
DE102015121566B4 (de) * | 2015-12-10 | 2021-12-09 | Infineon Technologies Ag | Halbleiterbauelemente und eine Schaltung zum Steuern eines Feldeffekttransistors eines Halbleiterbauelements |
CN106098561A (zh) * | 2016-07-25 | 2016-11-09 | 吉林华微电子股份有限公司 | 一种mosfet器件的制造方法及其器件 |
CN105977157A (zh) * | 2016-07-25 | 2016-09-28 | 吉林华微电子股份有限公司 | 一种igbt器件的制造方法及其器件 |
WO2018029796A1 (ja) * | 2016-08-10 | 2018-02-15 | 日産自動車株式会社 | 半導体装置 |
WO2018139556A1 (ja) * | 2017-01-25 | 2018-08-02 | ローム株式会社 | 半導体装置 |
JP6745737B2 (ja) * | 2017-02-17 | 2020-08-26 | 三菱電機株式会社 | ショットキーバリアダイオードの製造方法 |
DE102018200676A1 (de) * | 2018-01-17 | 2019-07-18 | Robert Bosch Gmbh | Leistungselektronisches Bauelement |
EP3780071B1 (en) * | 2018-03-26 | 2023-03-22 | Nissan Motor Co., Ltd. | Semiconductor device and method for manufacturing same |
JP6847890B2 (ja) | 2018-05-14 | 2021-03-24 | 株式会社東芝 | 半導体装置 |
US11227844B1 (en) * | 2018-10-09 | 2022-01-18 | National Technology & Engineering Solutions Of Sandia, Llc | Gallium nitride electromagnetic pulse arrestor |
JP6995221B2 (ja) * | 2018-12-10 | 2022-01-14 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
US11355630B2 (en) * | 2020-09-11 | 2022-06-07 | Wolfspeed, Inc. | Trench bottom shielding methods and approaches for trenched semiconductor device structures |
US20220262945A1 (en) * | 2021-02-16 | 2022-08-18 | Semiconductor Components Industries, Llc | Semiconductor devices with class iv channel region and class iii-v drift region |
CN115799344A (zh) * | 2023-02-03 | 2023-03-14 | 深圳平创半导体有限公司 | 一种碳化硅jfet元胞结构及其制作方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10136642A (ja) * | 1996-10-31 | 1998-05-22 | Sanyo Electric Co Ltd | Dc−dcコンバータ装置 |
JP2002203967A (ja) * | 2000-10-23 | 2002-07-19 | Matsushita Electric Ind Co Ltd | 半導体素子 |
JP2002299625A (ja) * | 2001-03-29 | 2002-10-11 | Mitsubishi Electric Corp | 炭化珪素半導体からなる半導体装置 |
JP2002538602A (ja) * | 1999-02-26 | 2002-11-12 | フェアチャイルド セミコンダクター コーポレイション | モノリシック集積されたトレンチmosfet及びショットキー・ダイオード |
JP2005101514A (ja) * | 2003-08-27 | 2005-04-14 | Mitsubishi Electric Corp | 絶縁ゲート型トランジスタ及びインバータ回路 |
JP2006066770A (ja) * | 2004-08-30 | 2006-03-09 | Nissan Motor Co Ltd | 半導体装置 |
WO2007034547A1 (ja) * | 2005-09-21 | 2007-03-29 | Shindengen Electric Manufacturing Co., Ltd. | トレンチゲートパワーmosfet及びその製造方法 |
JP2010010583A (ja) * | 2008-06-30 | 2010-01-14 | Sanken Electric Co Ltd | 半導体装置及びその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60136380A (ja) * | 1983-12-26 | 1985-07-19 | Hitachi Ltd | 半導体装置 |
US20020105009A1 (en) * | 2000-07-13 | 2002-08-08 | Eden Richard C. | Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor |
US7126169B2 (en) * | 2000-10-23 | 2006-10-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor element |
DE10214160B4 (de) * | 2002-03-28 | 2014-10-09 | Infineon Technologies Ag | Halbleiteranordnung mit Schottky-Kontakt |
US6979863B2 (en) | 2003-04-24 | 2005-12-27 | Cree, Inc. | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same |
US20050012143A1 (en) * | 2003-06-24 | 2005-01-20 | Hideaki Tanaka | Semiconductor device and method of manufacturing the same |
US7948029B2 (en) * | 2005-02-11 | 2011-05-24 | Alpha And Omega Semiconductor Incorporated | MOS device with varying trench depth |
US8461648B2 (en) * | 2005-07-27 | 2013-06-11 | Infineon Technologies Austria Ag | Semiconductor component with a drift region and a drift control region |
JP5560519B2 (ja) * | 2006-04-11 | 2014-07-30 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
-
2011
- 2011-04-27 JP JP2012512886A patent/JP5565461B2/ja active Active
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- 2011-04-27 EP EP11775053.9A patent/EP2565922B1/en active Active
- 2011-04-27 KR KR1020127029937A patent/KR101396611B1/ko active IP Right Grant
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10136642A (ja) * | 1996-10-31 | 1998-05-22 | Sanyo Electric Co Ltd | Dc−dcコンバータ装置 |
JP2002538602A (ja) * | 1999-02-26 | 2002-11-12 | フェアチャイルド セミコンダクター コーポレイション | モノリシック集積されたトレンチmosfet及びショットキー・ダイオード |
JP2002203967A (ja) * | 2000-10-23 | 2002-07-19 | Matsushita Electric Ind Co Ltd | 半導体素子 |
JP2002299625A (ja) * | 2001-03-29 | 2002-10-11 | Mitsubishi Electric Corp | 炭化珪素半導体からなる半導体装置 |
JP2005101514A (ja) * | 2003-08-27 | 2005-04-14 | Mitsubishi Electric Corp | 絶縁ゲート型トランジスタ及びインバータ回路 |
JP2006066770A (ja) * | 2004-08-30 | 2006-03-09 | Nissan Motor Co Ltd | 半導体装置 |
WO2007034547A1 (ja) * | 2005-09-21 | 2007-03-29 | Shindengen Electric Manufacturing Co., Ltd. | トレンチゲートパワーmosfet及びその製造方法 |
JP2010010583A (ja) * | 2008-06-30 | 2010-01-14 | Sanken Electric Co Ltd | 半導体装置及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11411084B2 (en) | 2020-07-09 | 2022-08-09 | Kabushiki Kaisha Toshiba | Semiconductor device, inverter circuit, drive device, vehicle, and elevator |
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EP2565922A4 (en) | 2017-11-29 |
WO2011136272A1 (ja) | 2011-11-03 |
US8786011B2 (en) | 2014-07-22 |
KR20130008066A (ko) | 2013-01-21 |
EP2565922A1 (en) | 2013-03-06 |
CN102859689B (zh) | 2015-07-01 |
KR101396611B1 (ko) | 2014-05-16 |
US20130043524A1 (en) | 2013-02-21 |
CN102859689A (zh) | 2013-01-02 |
JPWO2011136272A1 (ja) | 2013-07-22 |
EP2565922B1 (en) | 2020-04-01 |
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