JP6036765B2 - 半導体装置及び半導体装置の製造方法 - Google Patents
半導体装置及び半導体装置の製造方法 Download PDFInfo
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- JP6036765B2 JP6036765B2 JP2014169454A JP2014169454A JP6036765B2 JP 6036765 B2 JP6036765 B2 JP 6036765B2 JP 2014169454 A JP2014169454 A JP 2014169454A JP 2014169454 A JP2014169454 A JP 2014169454A JP 6036765 B2 JP6036765 B2 JP 6036765B2
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- 239000004065 semiconductor Substances 0.000 title claims description 132
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000011229 interlayer Substances 0.000 claims description 75
- 239000000758 substrate Substances 0.000 claims description 68
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 31
- 239000010410 layer Substances 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 15
- 210000000746 body region Anatomy 0.000 description 29
- 238000010586 diagram Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910018503 SF6 Inorganic materials 0.000 description 5
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000011084 recovery Methods 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
本明細書または図面に説明した技術要素は、単独あるいは各種の組み合わせによって技術有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの1つの目的を達成すること自体で技術有用性を持つものである。
12:半導体基板
14:トレンチ
16:ゲート絶縁膜
18:ゲート電極
20:層間絶縁膜
22:ソース電極
22a:埋め込み電極
22b:ショットキー電極
22c:表面電極
22d:バリアメタル層
24:凹部
26:ドレイン電極
30:ソース領域
32:上部ボディ領域
34:中間領域
36:下部ボディ領域
38:ドリフト領域
40:ドレイン領域
Claims (6)
- 半導体装置であって、
表面にトレンチが形成されている半導体基板と、
前記トレンチ内に配置されているトレンチ電極と、
前記トレンチ電極の表面を覆っており、前記半導体基板の前記表面から突出している層間絶縁膜と、
前記半導体基板の前記表面上に配置されており、前記層間絶縁膜から離間した位置に配置されており、前記半導体基板に対してショットキー接触しているショットキー電極と、
前記層間絶縁膜と前記ショットキー電極の間の凹部内に配置されており、前記ショットキー電極とは異なる金属により構成されている埋め込み電極と、
前記層間絶縁膜、前記埋め込み電極及び前記ショットキー電極を覆う表面電極、
を有し、
前記埋め込み電極に覆われている範囲において、前記半導体基板の前記表面と前記ショットキー電極の側面の間の角度が90度より大きい半導体装置。 - 前記埋め込み電極に覆われている範囲において、前記半導体基板の前記表面と前記層間絶縁膜の側面の間の角度が90度より大きい請求項1の半導体装置。
- 前記ショットキー電極と前記表面電極の間、及び、前記層間絶縁膜と前記表面電極の間に、前記埋め込み電極に対してエッチング選択性を有するバリアメタル層が配置されている請求項1または2の半導体装置。
- 前記埋め込み電極が、前記半導体基板に対してオーミック接触している請求項1〜3のいずれか一項の半導体装置。
- 半導体装置を製造する方法であって、
半導体基板の表面にトレンチを形成する工程と、
前記トレンチ内にトレンチ電極を形成する工程と、
前記トレンチ電極の表面上に、前記トレンチ電極の表面を覆う層間絶縁膜を含み、前記半導体基板の前記表面から突出する第1凸部を形成する工程と、
前記半導体基板の前記表面上であって前記第1凸部から離間した位置に、前記半導体基板に対してショットキー接触しているショットキー電極を含み、前記半導体基板の前記表面から突出する第2凸部を形成する工程と、
前記第1凸部と、前記第2凸部と、前記第1凸部と前記第2凸部の間の前記半導体基板の前記表面を覆うように、埋め込み電極を成長させる工程と、
前記第1凸部と前記第2凸部の表面が露出し、前記第1凸部と前記第2凸部の間の凹部内に前記埋め込み電極が残存するように、前記埋め込み電極をエッチングする工程と、
前記エッチングの後に、前記第1凸部、前記埋め込み電極及び前記第2凸部を覆う表面電極を成長させる工程、
を有する方法。 - 前記埋め込み電極が、前記ショットキー電極とは異なる金属により構成されている請求項5の方法。
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