JP5303839B2 - 絶縁ゲート炭化珪素半導体装置とその製造方法 - Google Patents
絶縁ゲート炭化珪素半導体装置とその製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 62
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 61
- 238000004519 manufacturing process Methods 0.000 title claims description 19
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- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000005684 electric field Effects 0.000 description 7
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
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Description
特許請求の範囲の請求項3記載の発明によれば、前記トレンチ間の前記一導電型低濃度堆積半導体層の表面層と前記絶縁膜の間に高濃度の一導電型第二ソース領域を備え、該一導電型第二ソース領域が前記他導電型チャネル領域と接する特許請求の範囲の請求項1記載の絶縁ゲート型炭化珪素半導体装置とする。
特許請求の範囲の請求項5記載の発明によれば、前記トレンチの底部に前記第一ベース領域に達する深さのコンタクト用トレンチを備え、該コンタクト用トレンチ内にソース電極を設ける特許請求の範囲の請求項4記載の絶縁ゲート型炭化珪素半導体装置とする。
図1は実施例1にかかる絶縁ゲート型炭化珪素半導体装置の断面図である。図2は実施例1にかかる絶縁ゲート型炭化珪素半導体装置の等価回路図である。図3は実施例1にかかる絶縁ゲート型炭化珪素半導体装置の製造方法を示す断面図である。図4は実施例2にかかる絶縁ゲート型炭化珪素半導体装置の製造方法を示す断面図である。図5は実施例3にかかる絶縁ゲート型炭化珪素半導体装置の断面図である。図6は実施例4にかかる絶縁ゲート型炭化珪素半導体装置の断面図である。図7は実施例5にかかる絶縁ゲート型炭化珪素半導体装置の断面図である。
3、3a n型高抵抗(低濃度)ドリフト層
10 ドレイン端子
15 SIT
16 MOSFET
17 ソース端子
18 ゲート端子
20 ソース電極
21 ドレイン電極
22 ゲート電極
23 SITのソース領域、n+第二ソース領域
24 pチャネル領域
25 ゲート絶縁膜
26 pベース領域
27 p+ゲート領域
28 層間絶縁膜
29a、29c イオン注入マスク
29b エッチングマスク
30 n+第一ソース領域
31 SITのチャネル領域、ピンチオフ領域。
Claims (6)
- 炭化珪素を主たる半導体材料とし、一導電型高濃度半導体基板上に堆積される一導電型低濃度堆積半導体層を備え、該一導電型低濃度堆積半導体層中に埋め込み形成される他導電型ベース領域と、前記一導電型低濃度堆積半導体層の表面から前記他導電型ベース領域に達する深さのトレンチと、該トレンチ底部の前記他導電型ベース領域の表面層に選択的に形成される一導電型第一ソース領域と、前記トレンチ側壁の前記一導電型低濃度堆積半導体層の表面層に形成され一端が前記一導電型第一ソース領域に接する他導電型チャネル領域と、該他導電型チャネル領域の前記トレンチ側壁表面にゲート絶縁膜を介して接するゲート電極と、前記トレンチ側壁表面のゲート絶縁膜を介して接するゲート電極の表面に更に層間絶縁膜を介して接し、且つ前記トレンチ底部に露出する一導電型第一ソース領域表面と前記他導電型ベース領域表面とに接するソース電極とを備え、前記トレンチ間の前記一導電型低濃度堆積半導体層の表面層が絶縁膜で覆われていることを特徴とする絶縁ゲート型炭化珪素半導体装置。
- 前記他導電型チャネル領域の前記トレンチ側壁表面にゲート絶縁膜を介して接するゲート電極が前記トレンチ間の前記一導電型低濃度堆積半導体層の上部に延長されていないことを特徴とする請求項1記載の絶縁ゲート型炭化珪素半導体装置。
- 前記トレンチ間の前記一導電型低濃度堆積半導体層の表面層と前記絶縁膜の間に高濃度の一導電型第二ソース領域を備え、該一導電型第二ソース領域が前記他導電型チャネル領域と接することを特徴とする請求項1記載の絶縁ゲート型炭化珪素半導体装置。
- 前記他導電型ベース領域が深くて高濃度の第一ベース領域と浅くて低濃度の第二ベース領域との二層構成であることを特徴とする請求項3記載の絶縁ゲート型炭化珪素半導体装置。
- 前記トレンチの底部に前記第一ベース領域に達する深さのコンタクト用トレンチを備え、該コンタクト用トレンチ内にソース電極を設けることを特徴とする請求項4記載の絶縁ゲート型炭化珪素半導体装置。
- 請求項3記載の絶縁ゲート型炭化珪素半導体装置を製造する際に、前記低濃度堆積半導体層中に埋め込み形成される他導電型ベース領域と前記低濃度堆積半導体層の表面から前記他導電型ベース領域に達する深さのトレンチとをそれぞれ形成し、該トレンチの側壁に斜めイオン注入による他導電型チャネル領域を形成後、前記一導電型第一ソース領域と一導電型第二ソース領域とを同時に形成することを特徴とする絶縁ゲート型炭化珪素半導体装置の製造方法。
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JP2007017945A JP5303839B2 (ja) | 2007-01-29 | 2007-01-29 | 絶縁ゲート炭化珪素半導体装置とその製造方法 |
US12/021,773 US7791135B2 (en) | 2007-01-29 | 2008-01-29 | Insulated gate silicon carbide semiconductor device and method for manufacturing the same |
US12/842,116 US8039346B2 (en) | 2007-01-29 | 2010-07-23 | Insulated gate silicon carbide semiconductor device and method for manufacturing the same |
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JP4604241B2 (ja) | 2004-11-18 | 2011-01-05 | 独立行政法人産業技術総合研究所 | 炭化ケイ素mos電界効果トランジスタおよびその製造方法 |
US7351637B2 (en) * | 2006-04-10 | 2008-04-01 | General Electric Company | Semiconductor transistors having reduced channel widths and methods of fabricating same |
JP2008177335A (ja) | 2007-01-18 | 2008-07-31 | Fuji Electric Device Technology Co Ltd | 炭化珪素絶縁ゲート型半導体装置。 |
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US8039346B2 (en) | 2011-10-18 |
US20100285647A1 (en) | 2010-11-11 |
US20080197361A1 (en) | 2008-08-21 |
US7791135B2 (en) | 2010-09-07 |
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