JP6666224B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6666224B2 JP6666224B2 JP2016184627A JP2016184627A JP6666224B2 JP 6666224 B2 JP6666224 B2 JP 6666224B2 JP 2016184627 A JP2016184627 A JP 2016184627A JP 2016184627 A JP2016184627 A JP 2016184627A JP 6666224 B2 JP6666224 B2 JP 6666224B2
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- silicon carbide
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- 239000004065 semiconductor Substances 0.000 title claims description 62
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 204
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 201
- 239000012535 impurity Substances 0.000 claims description 184
- 239000004020 conductor Substances 0.000 claims 1
- 210000000746 body region Anatomy 0.000 description 88
- 239000010410 layer Substances 0.000 description 72
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 239000000969 carrier Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 230000007423 decrease Effects 0.000 description 10
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 230000006798 recombination Effects 0.000 description 9
- 238000005215 recombination Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000005421 electrostatic potential Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000001939 inductive effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 4
- 229910021334 nickel silicide Inorganic materials 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
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Description
本実施形態の半導体装置は、第1の電極と、第2の電極と、ゲート電極と、少なくとも一部が第1の電極と第2の電極との間に設けられ、少なくとも一部がゲート電極と第2の電極との間に設けられた第1導電型の第1の炭化珪素領域と、第1の電極と第1の炭化珪素領域との間に設けられ、第1の炭化珪素領域よりも第1導電型不純物の不純物濃度が高い第1導電型の第2の炭化珪素領域と、第1の電極と第2の炭化珪素領域との間に設けられた第2導電型の第3の炭化珪素領域と、第1の電極と第3の炭化珪素領域との間に設けられた第1導電型の第4の炭化珪素領域と、ゲート電極と第2の炭化珪素領域との間に設けられ、第4の炭化珪素領域との間に第3の炭化珪素領域が位置する第1導電型の第5の炭化珪素領域と、第1の電極と第2の炭化珪素領域との間に設けられ、第1の電極に接する第1導電型の第6の炭化珪素領域と、ゲート電極と第3の炭化珪素領域との間、及び、ゲート電極と第5の炭化珪素領域との間に設けられたゲート絶縁層と、を備える。
本実施形態の半導体装置は、第1の電極と、第2の電極と、ゲート電極と、少なくとも一部が第1の電極と第2の電極との間に設けられ、少なくとも一部がゲート電極と第2の電極との間に設けられた第1導電型の第1の炭化珪素領域と、第1の電極と第1の炭化珪素領域との間に設けられ、第1の電極に接する第1導電型の第2の炭化珪素領域と、第1の電極と第1の炭化珪素領域との間に設けられ、第1の電極に接する第1導電型の第3の炭化珪素領域と、第1の電極と第1の炭化珪素領域との間に設けられ、第1の電極に接する第1導電型の第4の炭化珪素領域と、第1の電極と第1の炭化珪素領域との間に設けられ、第1の電極に接する第1導電型の第5の炭化珪素領域と、第1の電極と第1の炭化珪素領域との間に設けられ、第2の炭化珪素領域と第4の炭化珪素領域との間に位置し、第3の炭化珪素領域と第5の炭化珪素領域との間に位置する第2導電型の第6の炭化珪素領域と、第1の電極と、第6の炭化珪素領域との間に設けられた第1導電型の第7の炭化珪素領域と、ゲート電極と第1の炭化珪素領域との間、ゲート電極と第6の炭化珪素領域との間に設けられたゲート絶縁層と、を備える。
図11は、第2の実施形態の第1の変形例の模式断面図である。図10に対応する断面を示す。
図12は、第2の実施形態の第2の変形例の模式断面図である。図10に対応する断面を示す。
本実施形態の半導体装置は、六角形を基本とするユニットが繰り返し配置されたレイアウトパターンを備える点で第2の実施形態の半導体装置と異なる。以下、第2の実施形態と重複する内容については省略する場合がある。
本実施形態の半導体装置は、四角形を基本とするユニットが繰り返し配置されたレイアウトパターンを備える点で第2の実施形態の半導体装置と異なる。以下、第2の実施形態と重複する内容については省略する場合がある。
14 ドレイン電極(第2の電極)
16 ゲート絶縁層
18 ゲート電極
24 ドリフト領域(第1の炭化珪素領域)
25 ドリフト領域(第1の炭化珪素領域)
26 低抵抗領域(第2の炭化珪素領域)
28 ボディ領域(第3の炭化珪素領域)
29 ボディ領域(第6の炭化珪素領域)
30 ソース領域(第4の炭化珪素領域)
31 ソース領域(第7の炭化珪素領域)
32 JFET領域(第5の炭化珪素領域)
34 SBDカソード領域(第6の炭化珪素領域)
35a 第1のSBDカソード領域(第2の炭化珪素領域)
35b 第2のSBDカソード領域(第3の炭化珪素領域)
35c 第3のSBDカソード領域(第4の炭化珪素領域)
35d 第4のSBDカソード領域(第5の炭化珪素領域)
36 ボディコンタクト領域(第7の炭化珪素領域)
37 ボディコンタクト領域(第8の炭化珪素領域)
100 MOSFET(半導体装置)
200 MOSFET(半導体装置)
300 MOSFET(半導体装置)
400 MOSFET(半導体装置)
Claims (4)
- 第1の電極と、
第2の電極と、
ゲート電極と、
少なくとも一部が前記第1の電極と前記第2の電極との間に設けられ、少なくとも一部が前記ゲート電極と前記第2の電極との間に設けられた第1導電型の第1の炭化珪素領域と、
前記第1の電極と前記第1の炭化珪素領域との間に設けられ、前記第1の炭化珪素領域よりも第1導電型不純物の不純物濃度が高い第1導電型の第2の炭化珪素領域と、
前記第1の電極と前記第2の炭化珪素領域との間に設けられた第2導電型の第3の炭化珪素領域と、
前記第1の電極と前記第3の炭化珪素領域との間に設けられた第1導電型の第4の炭化珪素領域と、
前記ゲート電極と前記第2の炭化珪素領域との間に設けられ、前記第4の炭化珪素領域との間に前記第3の炭化珪素領域が位置する第1導電型の第5の炭化珪素領域と、
前記第1の電極と前記第2の炭化珪素領域との間に設けられ、前記第1の電極に接する第1導電型の第6の炭化珪素領域と、
前記第6の炭化珪素領域と前記第4の炭化珪素領域との間に設けられ、前記第3の炭化珪素領域よりも第2導電型の不純物濃度が高く、前記第2の炭化珪素領域と離間し、前記第2の炭化珪素領域との間に前記第3の炭化珪素領域が位置する第2導電型の第7の炭化珪素領域と、
前記ゲート電極と前記第3の炭化珪素領域との間、及び、前記ゲート電極と前記第5の炭化珪素領域との間に設けられたゲート絶縁層と、
を備え、
前記第2の炭化珪素領域の第1導電型不純物の不純物濃度が前記第5の炭化珪素領域及び前記第6の炭化珪素領域の第1導電型不純物の不純物濃度よりも高い半導体装置。 - 前記第6の炭化珪素領域の第1導電型不純物の不純物濃度が前記第1の炭化珪素領域の第1導電型不純物の不純物濃度よりも高い請求項1記載の半導体装置。
- 前記第5の炭化珪素領域の第1導電型不純物の不純物濃度が前記第1の炭化珪素領域の第1導電型不純物の不純物濃度よりも高い請求項1又は請求項2記載の半導体装置。
- 前記第6の炭化珪素領域の第1導電型不純物の不純物濃度が前記第5の炭化珪素領域の第1導電型不純物の不純物濃度よりも高い請求項1ないし請求項3いずれか一項記載の半導体装置。
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