JP6995725B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6995725B2 JP6995725B2 JP2018175441A JP2018175441A JP6995725B2 JP 6995725 B2 JP6995725 B2 JP 6995725B2 JP 2018175441 A JP2018175441 A JP 2018175441A JP 2018175441 A JP2018175441 A JP 2018175441A JP 6995725 B2 JP6995725 B2 JP 6995725B2
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- silicon carbide
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- metal silicide
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- 239000004065 semiconductor Substances 0.000 title claims description 24
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 67
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 63
- 239000012535 impurity Substances 0.000 claims description 42
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 229910021332 silicide Inorganic materials 0.000 claims description 32
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 3
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000001154 acute effect Effects 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000004645 scanning capacitance microscopy Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Description
ドリフト領域22は、カソード領域20上に設けられる。ドリフト領域22は、キャリアを流す領域として機能する。ドリフト領域22の一部は、第1の面P1でアノード電極12に接する。
12 アノード電極(第1の電極)
14 カソード電極(第2の電極)
18 金属シリサイド層
22 ドリフト領域(第1の炭化珪素領域)
24 第1のアノード領域(第2の炭化珪素領域)
26 第2のアノード領域(第4の炭化珪素領域)
28 p型領域(第3の炭化珪素領域)
100 JBS(半導体装置)
P1 第1の面
P2 第2の面
Claims (5)
- 第1の面と前記第1の面に対向する第2の面を有する炭化珪素層と、
前記炭化珪素層の中に設けられた第1導電型の第1の炭化珪素領域と、
前記第1の炭化珪素領域と前記第1の面との間に設けられ、前記第1の面と接する部分の形状が八角形である第2導電型の第2の炭化珪素領域と、
前記第1の炭化珪素領域と前記第1の面との間に設けられ、前記第1の面に平行な第1の方向に延び、前記第2の炭化珪素領域に接続され、前記第1の面に対し平行で前記第1の方向に垂直な第2の方向の幅が、前記第2の炭化珪素領域の前記第2の方向の幅よりも狭い第2導電型の第3の炭化珪素領域と、
前記炭化珪素層の前記第1の面の側に設けられ、前記第1の炭化珪素領域に接する第1の電極と、
前記炭化珪素層の前記第2の面の側に設けられた第2の電極と、
前記第1の電極と前記第2の炭化珪素領域との間に設けられ、前記第1の面と接する部分の形状が八角形である金属シリサイド層と、
を備える半導体装置。 - 前記金属シリサイド層の前記八角形が有する八辺のうち、少なくとも一辺が前記第1の方向に平行な請求項1記載の半導体装置。
- 前記第2の炭化珪素領域と前記金属シリサイド層との間に、前記第2の炭化珪素領域の第2導電型不純物濃度よりも第2導電型不純物濃度の高い第2導電型の第4の炭化珪素領域を有する請求項1又は請求項2いずれか一項記載の半導体装置。
- 前記金属シリサイド層は、ニッケルシリサイド又はチタンシリサイドを含む請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記第2の炭化珪素領域の前記八角形が有する八辺のうち、二辺が前記第1の方向に平行で、別の二辺が前記第2の方向に平行である請求項1ないし請求項4いずれか一項記載の半導体装置。
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JP2018175441A JP6995725B2 (ja) | 2018-09-19 | 2018-09-19 | 半導体装置 |
US16/284,012 US10658467B2 (en) | 2018-09-19 | 2019-02-25 | Semiconductor device |
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JP2018175441A JP6995725B2 (ja) | 2018-09-19 | 2018-09-19 | 半導体装置 |
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JP2020047791A JP2020047791A (ja) | 2020-03-26 |
JP6995725B2 true JP6995725B2 (ja) | 2022-01-17 |
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JP (1) | JP6995725B2 (ja) |
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CN116613187A (zh) * | 2020-07-01 | 2023-08-18 | 湖南三安半导体有限责任公司 | 一种碳化硅功率二极管器件及其制备方法 |
US11437525B2 (en) | 2020-07-01 | 2022-09-06 | Hunan Sanan Semiconductor Co., Ltd. | Silicon carbide power diode device and fabrication method thereof |
EP3933934A1 (en) | 2020-07-01 | 2022-01-05 | Xiamen Sanan Integrated Circuit Co., Ltd | Silicon carbide power diode device and fabrication method thereof |
EP3975266A1 (en) * | 2020-09-28 | 2022-03-30 | Nexperia B.V. | Semiconductor device with improved junction termination extension region |
JP2023136028A (ja) * | 2022-03-16 | 2023-09-29 | 株式会社東芝 | 半導体装置 |
EP4290579A1 (en) * | 2022-06-10 | 2023-12-13 | Nexperia B.V. | Semiconductor component and method of manufacturing thereof |
JP2024043740A (ja) * | 2022-09-20 | 2024-04-02 | 株式会社東芝 | 半導体装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015095578A (ja) | 2013-11-13 | 2015-05-18 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP2016163049A (ja) | 2015-03-03 | 2016-09-05 | インフィネオン テクノロジーズ アクチエンゲゼルシャフトInfineon Technologies AG | ダイオード領域用のゲート電極とコンタクト構造とを含んでいるトレンチ構造を備えた半導体デバイス |
JP2017168663A (ja) | 2016-03-16 | 2017-09-21 | 株式会社東芝 | 半導体装置 |
JP2018049951A (ja) | 2016-09-21 | 2018-03-29 | 株式会社東芝 | 半導体装置 |
JP2018098227A (ja) | 2016-12-07 | 2018-06-21 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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US8803277B2 (en) | 2011-02-10 | 2014-08-12 | Cree, Inc. | Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same |
JP5646527B2 (ja) * | 2012-03-02 | 2014-12-24 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
JP6112600B2 (ja) | 2012-12-10 | 2017-04-12 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
JP6300659B2 (ja) | 2014-06-19 | 2018-03-28 | 株式会社東芝 | 半導体装置 |
JP6363541B2 (ja) * | 2015-03-16 | 2018-07-25 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2015207780A (ja) | 2015-06-16 | 2015-11-19 | 富士電機株式会社 | ワイドバンドギャップ半導体装置 |
JP6400544B2 (ja) | 2015-09-11 | 2018-10-03 | 株式会社東芝 | 半導体装置 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015095578A (ja) | 2013-11-13 | 2015-05-18 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP2016163049A (ja) | 2015-03-03 | 2016-09-05 | インフィネオン テクノロジーズ アクチエンゲゼルシャフトInfineon Technologies AG | ダイオード領域用のゲート電極とコンタクト構造とを含んでいるトレンチ構造を備えた半導体デバイス |
JP2017168663A (ja) | 2016-03-16 | 2017-09-21 | 株式会社東芝 | 半導体装置 |
JP2018049951A (ja) | 2016-09-21 | 2018-03-29 | 株式会社東芝 | 半導体装置 |
JP2018098227A (ja) | 2016-12-07 | 2018-06-21 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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JP2020047791A (ja) | 2020-03-26 |
US20200091298A1 (en) | 2020-03-19 |
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