JP5646527B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 163
- 238000004519 manufacturing process Methods 0.000 title claims description 46
- 239000002184 metal Substances 0.000 claims description 105
- 229910052751 metal Inorganic materials 0.000 claims description 104
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 103
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 100
- 229910052799 carbon Inorganic materials 0.000 claims description 65
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 62
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 57
- 150000001875 compounds Chemical class 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 47
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 38
- 239000013078 crystal Substances 0.000 claims description 31
- 230000002776 aggregation Effects 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 claims description 28
- 229910021332 silicide Inorganic materials 0.000 claims description 28
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 28
- 238000004220 aggregation Methods 0.000 claims description 27
- 238000005468 ion implantation Methods 0.000 claims description 24
- 229910052759 nickel Inorganic materials 0.000 claims description 19
- 239000007795 chemical reaction product Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 110
- 239000010410 layer Substances 0.000 description 89
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 65
- 229910021334 nickel silicide Inorganic materials 0.000 description 65
- 238000000137 annealing Methods 0.000 description 30
- 230000008569 process Effects 0.000 description 29
- 239000012535 impurity Substances 0.000 description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 230000006870 function Effects 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
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- 229910052732 germanium Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
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- 238000005229 chemical vapour deposition Methods 0.000 description 4
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- -1 that is Inorganic materials 0.000 description 4
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- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
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- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical group [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 3
- 229910001000 nickel titanium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
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- 229910000765 intermetallic Inorganic materials 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000003746 solid phase reaction Methods 0.000 description 2
- 238000012916 structural analysis Methods 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910017414 LaAl Inorganic materials 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
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- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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Description
本実施の形態の半導体装置は、単結晶の第1の半導体で形成される基板と、基板上に形成されるゲート絶縁膜と、ゲート絶縁膜上に形成され、多結晶の第2の半導体で形成される半導体層と、金属と第2の半導体との反応生成物である第1の金属半導体化合物で形成される金属半導体化合物層との積層構造を備えるゲート電極と、ゲート電極を挟んで基板上に形成され、金属と第1の半導体との反応生成物である第2の金属半導体化合物で形成される電極とを備え、多結晶の第2の半導体上の第1の金属半導体化合物の凝集温度が、単結晶の第1の半導体上の第2の金属半導体化合物の凝集温度より低く、半導体層と金属半導体化合物層との界面にクラスタ状の炭素高濃度領域を備える。
図3は、本実施の形態の製造方法の要部の工程フロー図である。また、図4〜図11は、本実施の形態の半導体装置の製造方法を示す模式工程断面図である。
本実施の形態は、半導体装置がIGBT(Insulated Gate Bipolar Transistor)である点で第1の実施の形態と異なっている。ゲート電極の構造、製造方法の要部については、第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については、記述を省略する。
本実施の形態は、ゲート電極14の下層の半導体層14aが多結晶のp+型シリコンジャーマナイド(p+型多結晶シリコンGe)、金属半導体化合物層14bがニッケルシリコンジャーマナイドであること以外は、第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については、記述を省略する。
本実施の形態は、半導体装置がNAND型フラッシュメモリである。構造、製造方法の要部については、第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については、記述を省略する。
本実施の形態は、ゲート電極14の半導体層14aが多結晶のp+型ゲルマニウム(Ge)、金属半導体化合物層14bがニッケルジャーマナイドであること以外は、第4の実施の形態と同様である。したがって、第4の実施の形態と重複する内容については、記述を省略する。
10a n+型SiC層
10b n−型SiC層
12 ゲート絶縁膜
14 ゲート電極
14a 半導体層
14b 金属半導体化合物層
26 電極
100 DIMOSFET
200 IGBT
300 DIMOSFET
400 NAND型フラッシュメモリ
500 NAND型フラッシュメモリ
Claims (12)
- 単結晶の第1の半導体で形成される基板と、
前記基板上に形成されるゲート絶縁膜と、
前記ゲート絶縁膜上に形成され、多結晶の第2の半導体で形成される半導体層と、金属と前記第2の半導体との反応生成物である第1の金属半導体化合物で形成される金属半導体化合物層との積層構造を備えるゲート電極と、
前記ゲート電極を挟んで前記基板上に形成され、前記金属と前記第1の半導体との反応生成物である第2の金属半導体化合物で形成される電極とを備え、
前記多結晶の第2の半導体上の前記第1の金属半導体化合物の凝集温度が、前記単結晶の第1の半導体上の前記第2の金属半導体化合物の凝集温度より低く、
前記半導体層と前記金属半導体化合物層との界面にクラスタ状の炭素高濃度領域を有することを特徴とする半導体装置。 - 前記第1の半導体が炭化珪素であり、
前記第2の半導体がシリコンであることを特徴とする請求項1記載の半導体装置。 - 前記金属がニッケルであることを特徴とする請求項1または請求項2記載の半導体装置。
- 前記炭素高濃度領域の径の平均値が1nm以上30nm以下であることを特徴とする請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記炭素高濃度領域の前記界面における面密度が1×1010cm−2以上1×1015cm−2以下であることを特徴とする請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記炭素高濃度領域の前記界面における面密度が、前記第1の金属半導体化合物の結晶粒の面密度より大きいことを特徴とする請求項1ないし請求項5いずれか一項記載の半導体装置。
- 多結晶の半導体膜に炭素をイオン注入し、
第1の熱処理を行って、前記半導体膜中の前記炭素をクラスタ化し、
前記半導体膜上に金属膜を形成し、
第2の熱処理を行って、前記半導体膜と前記金属膜を反応させ金属半導体化合物膜を形成することを特徴とする半導体装置の製造方法。 - 前記第1の熱処理の温度が700℃以上1200℃以下であることを特徴とする請求項7記載の半導体装置の製造方法。
- 前記炭素のイオン注入において、炭素のドーズ量が1e13cm−2以上5e16cm−2以下であることを特徴とする請求項7または請求項8記載の半導体装置の製造方法。
- 炭化珪素基板上にゲート絶縁膜を形成し、
前記ゲート絶縁膜上に多結晶シリコン膜を形成し、
前記多結晶シリコン膜に炭素をイオン注入し、
第1の熱処理を行って、前記多結晶シリコン膜中の前記炭素をクラスタ化し、
前記多結晶シリコン膜をパターニングし、
前記多結晶シリコン膜上および前記炭化珪素基板上に金属膜を形成し、
第2の熱処理を行って、前記多結晶シリコン膜と前記金属膜とを反応させ第1の金属シリサイド膜を形成し、前記炭化珪素基板と前記金属膜を反応させ第2の金属シリサイド膜を形成することを特徴とする半導体装置の製造方法。 - 前記金属膜がニッケル膜であることを特徴とする請求項10記載の半導体装置の製造方法。
- 前記第1の熱処理の温度が700℃以上1200℃以下であることを特徴とする請求項10または請求項11記載の半導体装置の製造方法。
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