JP6441412B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6441412B2 JP6441412B2 JP2017106811A JP2017106811A JP6441412B2 JP 6441412 B2 JP6441412 B2 JP 6441412B2 JP 2017106811 A JP2017106811 A JP 2017106811A JP 2017106811 A JP2017106811 A JP 2017106811A JP 6441412 B2 JP6441412 B2 JP 6441412B2
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- 239000004065 semiconductor Substances 0.000 title claims description 98
- 239000012535 impurity Substances 0.000 claims description 242
- 229910052799 carbon Inorganic materials 0.000 claims description 48
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 38
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 192
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 183
- 239000010410 layer Substances 0.000 description 177
- 238000004519 manufacturing process Methods 0.000 description 69
- 238000005468 ion implantation Methods 0.000 description 41
- 239000000758 substrate Substances 0.000 description 38
- 238000000034 method Methods 0.000 description 35
- 230000003647 oxidation Effects 0.000 description 24
- 238000007254 oxidation reaction Methods 0.000 description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 238000000137 annealing Methods 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 230000004913 activation Effects 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 230000003247 decreasing effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 229910021332 silicide Inorganic materials 0.000 description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052787 antimony Inorganic materials 0.000 description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 150000001721 carbon Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本実施形態の半導体装置は、SiC層と、SiC層と電気的に接続される電極と、SiC層と電極との間に設けられ、不純物の最大濃度が1×1020cm−3以上5×1022cm−3以下で、不純物の最大濃度の位置と、最大濃度の位置からSiC層側の、不純物の濃度が最大濃度の一桁低下した位置との距離が50nm以下である不純物領域と、を備える。
本実施形態の半導体装置は、n型のSiC基板と電極との界面にn型不純物領域が設けられる点で、第1の実施形態と異なっている。第1の実施形態と重複する内容については、記述を省略する。
本実施形態の半導体装置は、SiC層がn型領域とp型領域を有し、不純物領域が、不純物がn型不純物である第1の領域と、不純物がp型不純物である第2の領域を有し、n型領域と電極との間に第1の領域が設けられ、p型領域と電極との間に第2の領域が設けられ点で、第1及び第2の実施形態と異なっている。第1又は第2の実施形態と重複する内容については、記述を省略する。
本実施形態の半導体装置は、トランスペアレント型ダイオードである点で、第1乃至第3の実施形態と異なっている。以下、第1乃至第3の実施形態と重複する内容については記述を省略する。
10b n−型のドリフト層(SiC層)
12 アノード層(SiC層)
14 アノード電極(電極)
16 p型不純物領域(不純物領域)
18 カソード電極(電極)
22 n型不純物領域(不純物領域)
32 ソース領域(n型領域)
34 pウェルコンタクト領域(p型領域)
44 ソース・pウェル共通電極(電極)
46 n型不純物領域(第1の領域)
48 p型不純物領域(第2の領域)
70 p+型のSiC層(p型領域)
74 n+型のSiC層(n型領域)
76 アノード電極(電極)
80 n型不純物領域(第1の領域)
82 p型不純物領域(第2の領域)
100 PINダイオード(半導体装置)
200 PINダイオード(半導体装置)
300 MOSFET(半導体装置)
400 トランスペアレント型ダイオード(半導体装置)
Claims (8)
- SiC層と、
前記SiC層と電気的に接続される電極と、
前記SiC層と前記電極との間に設けられ、不純物の最大濃度が1×1020cm−3以上5×1022cm−3以下で、前記不純物の前記最大濃度の第1の位置と、前記第1の位置から前記SiC層側の、前記不純物の濃度が前記最大濃度の一桁低下した第2の位置との間の第1の距離が50nm以下であり、前記電極と前記第2の位置との間の第2の距離が50nm以下である不純物領域と、を備え、
前記SiC層がp型であり、前記不純物がp型不純物であり、
前記不純物領域及び前記SiC層の中の前記不純物の濃度が、前記第1の位置から前記電極と反対方向に向かって単調減少する半導体装置。 - 前記不純物の濃度が、前記第1の位置から前記不純物領域及び前記SiC層の中の前記不純物の最小濃度の位置まで単調減少する請求項1記載の半導体装置。
- 前記p型不純物が、Al(アルミニウム)、B(ボロン)、Ga(ガリウム)、又はIn(インジウム)である請求項1又は請求項2記載の半導体装置。
- 前記電極は金属である請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記金属中の炭素濃度が1×1018cm−3以下である請求項4記載の半導体装置。
- 前記第1の距離及び前記第2の距離が20nm以下である請求項1乃至請求項5いずれか一項記載の半導体装置。
- 前記第1の距離及び前記第2の距離が10nm以下である請求項1乃至請求項6いずれか一項記載の半導体装置。
- 前記第1の位置が前記電極と前記不純物領域との界面に位置する請求項1乃至請求項7いずれか一項記載の半導体装置。
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JP2017106811A JP6441412B2 (ja) | 2017-05-30 | 2017-05-30 | 半導体装置 |
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JP2017106811A JP6441412B2 (ja) | 2017-05-30 | 2017-05-30 | 半導体装置 |
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JP2014190930A Division JP6208106B2 (ja) | 2014-09-19 | 2014-09-19 | 半導体装置及びその製造方法 |
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JP2017147471A JP2017147471A (ja) | 2017-08-24 |
JP6441412B2 true JP6441412B2 (ja) | 2018-12-19 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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EP3780117A4 (en) * | 2018-04-11 | 2021-12-08 | Shindengen Electric Manufacturing Co., Ltd. | METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT |
WO2019198167A1 (ja) * | 2018-04-11 | 2019-10-17 | 新電元工業株式会社 | 半導体装置の製造方法及び半導体装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0864802A (ja) * | 1994-06-07 | 1996-03-08 | Mitsubishi Materials Corp | 炭化珪素半導体装置及びその製造方法 |
JP3303530B2 (ja) * | 1994-06-23 | 2002-07-22 | 富士電機株式会社 | 炭化けい素半導体素子の製造方法 |
JP5391643B2 (ja) * | 2008-10-22 | 2014-01-15 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP5102411B2 (ja) * | 2010-09-06 | 2012-12-19 | パナソニック株式会社 | 半導体装置およびその製造方法 |
JP5613640B2 (ja) * | 2011-09-08 | 2014-10-29 | 株式会社東芝 | 半導体装置の製造方法 |
JP6018501B2 (ja) * | 2012-12-27 | 2016-11-02 | 株式会社東芝 | 半導体装置及びその製造方法 |
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