JP7354027B2 - 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 - Google Patents
半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 Download PDFInfo
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- JP7354027B2 JP7354027B2 JP2020044566A JP2020044566A JP7354027B2 JP 7354027 B2 JP7354027 B2 JP 7354027B2 JP 2020044566 A JP2020044566 A JP 2020044566A JP 2020044566 A JP2020044566 A JP 2020044566A JP 7354027 B2 JP7354027 B2 JP 7354027B2
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- 239000004065 semiconductor Substances 0.000 title claims description 128
- 238000004519 manufacturing process Methods 0.000 title claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 299
- 239000002184 metal Substances 0.000 claims description 298
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 251
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 246
- 229910021332 silicide Inorganic materials 0.000 claims description 229
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 228
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 135
- 239000012535 impurity Substances 0.000 claims description 92
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 68
- 229910052799 carbon Inorganic materials 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 61
- 238000010438 heat treatment Methods 0.000 claims description 60
- 229910052782 aluminium Inorganic materials 0.000 claims description 54
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 54
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 51
- 229910052759 nickel Inorganic materials 0.000 claims description 47
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 39
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 30
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 claims description 19
- 238000009826 distribution Methods 0.000 claims description 19
- 229910052763 palladium Inorganic materials 0.000 claims description 19
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 15
- 239000001569 carbon dioxide Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 229910052697 platinum Inorganic materials 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 450
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 25
- 150000001721 carbon Chemical class 0.000 description 22
- 229910021334 nickel silicide Inorganic materials 0.000 description 21
- 238000010586 diagram Methods 0.000 description 20
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 17
- 229910052698 phosphorus Inorganic materials 0.000 description 17
- 239000011574 phosphorus Substances 0.000 description 17
- 229910052721 tungsten Inorganic materials 0.000 description 15
- 239000010937 tungsten Substances 0.000 description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 11
- 229910005883 NiSi Inorganic materials 0.000 description 11
- 239000003054 catalyst Substances 0.000 description 10
- 230000005684 electric field Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 229910005881 NiSi 2 Inorganic materials 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 8
- 229910002091 carbon monoxide Inorganic materials 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 229910021339 platinum silicide Inorganic materials 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000003085 diluting agent Substances 0.000 description 4
- 238000010494 dissociation reaction Methods 0.000 description 4
- 230000005593 dissociations Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 150000001247 metal acetylides Chemical class 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052776 Thorium Inorganic materials 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- UPHIPHFJVNKLMR-UHFFFAOYSA-N chromium iron Chemical compound [Cr].[Fe] UPHIPHFJVNKLMR-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- -1 that is Chemical compound 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- 239000002244 precipitate Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
第1の実施形態の半導体装置は、炭化珪素層と、金属層と、炭化珪素層と金属層との間に位置し、ニッケル(Ni)、パラジウム(Pd)、及び、白金(Pt)からなる群から選ばれる一つの金属元素(M)のシリサイドを含み、炭素濃度が1×1017cm-3以下である導電層と、を備える。
C+CO2=2CO+2.84eV ・・・式(1)
C+4H=CH4+14.52eV ・・・式(2)
C+2H2=CH4-4.48eV ・・・式(3)
Ni31Si12<Ni2Si<NiSi<NiSi2
第2の実施形態の半導体装置は、炭化珪素層に含まれる不純物がn型不純物である点で、第1の実施形態の半導体装置と異なる。以下、第1の実施形態と重複する内容については、一部記述を省略する。
第3の実施形態の半導体装置は、第1の面と、第1の面に対向する第2の面とを有し、n型の第1の炭化珪素領域と、第1の炭化珪素領域と第1の面との間に位置するp型の第2の炭化珪素領域と、第2の炭化珪素領域と第1の面との間に位置し、第1の炭化珪素領域よりもn型不純物濃度の高いn型の第3の炭化珪素領域と、第1の炭化珪素領域と第1の面との間に位置し、第2の炭化珪素領域よりもp型不純物濃度の高いp型の第4の炭化珪素領域と、を含む炭化珪素層と、炭化珪素層の第1の面の側に位置するゲート電極と、ゲート電極と第2の炭化珪素領域との間に位置するゲート絶縁層と、炭化珪素層の第1の面の側に位置し、第3の炭化珪素領域及び第4の炭化珪素領域に電気的に接続された第1の電極と、炭化珪素層の第2の面の側に位置し、第1の炭化珪素領域に電気的に接続された第2の電極と、炭化珪素層と第1の電極との間に位置し、第3の炭化珪素領域及び第4の炭化珪素領域に接し、ニッケル(Ni)、パラジウム(Pd)、及び、白金(Pt)からなる群から選ばれる一つの金属元素(M)のシリサイドを含み、炭素濃度が1×1017cm-3以下である導電層と、を備える。
第4の実施形態の半導体装置は、導電層の深さが第3の炭化珪素領域の深さよりも深い点で、第3の実施形態の半導体装置と異なる。以下、第1の実施形態、第2の実施形態、又は、第3の実施形態と重複する内容については、一部記述を省略する。
第5の実施形態の半導体装置は、ゲート電極がトレンチの中に設けられる点で、第4の実施形態の半導体装置と異なる。以下、以下、第1の実施形態、第2の実施形態、第3の実施形態、又は、第4の実施形態と重複する内容については、一部記述を省略する。
第6の実施形態のインバータ回路及び駆動装置は、第3の実施形態の半導体装置を備えるインバータ回路及び駆動装置である。
第7の実施形態の車両は、第3の実施形態の半導体装置を備える車両である。
第8の実施形態の車両は、第3の実施形態の半導体装置を備える車両である。
第9の実施形態の昇降機は、第3の実施形態の半導体装置を備える昇降機である。
12 コンタクト電極(金属層)
14 金属シリサイド層(導電層)
16 絶縁層
24 第1の金属膜
28 第2の金属膜
42 ソース電極(第1の電極、金属層)
43 金属シリサイド層(導電層)
44 ドレイン電極(第2の電極)
46 ゲート絶縁層
50 ゲート電極
56 ドリフト領域(第1の炭化珪素領域)
58 pウェル領域(第2の炭化珪素領域)
60 ソース領域(第3の炭化珪素領域)
62 pウェルコンタクト領域(第4の炭化珪素領域)
100 コンタクト構造(半導体装置)
150 インバータ回路
200 コンタクト構造(半導体装置)
300 MOSFET(半導体装置)
400 MOSFET(半導体装置)
500 MOSFET(半導体装置)
700 駆動装置
800 車両
900 車両
1000 昇降機
P1 第1の面
P2 第2の面
Claims (19)
- 炭化珪素層と、
金属層と、
前記炭化珪素層と前記金属層との間に位置し、ニッケル(Ni)、パラジウム(Pd)、及び、白金(Pt)からなる群から選ばれる一つの金属元素(M)のシリサイドを含み、炭素濃度が1×1017cm-3以下である導電層と、
を備える半導体装置。 - 前記導電層におけるシリコン(Si)に対する前記金属元素の原子比(M/Si)が1.2以上である請求項1記載の半導体装置。
- 前記金属層の炭素濃度が1×1017cm-3以下である請求項1又は請求項2記載の半導体装置。
- 前記炭化珪素層が不純物を含み、前記炭化珪素層及び前記導電層の中の前記不純物の濃度分布が、前記炭化珪素層と前記導電層との間の界面にピークを有する請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記炭化珪素層がアルミニウムを含み、前記導電層のアルミニウム濃度が1×1017cm-3以下である請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記炭化珪素層の前記金属層が位置する側に、前記炭化珪素層と接する絶縁層を、更に備え、
前記炭化珪素層と前記絶縁層との間の界面を基準とする前記炭化珪素層と前記導電層との間の界面の深さが50nm以上である請求項1ないし請求項5いずれか一項記載の半導体装置。 - 第1の面と、前記第1の面に対向する第2の面とを有し、n型の第1の炭化珪素領域と、前記第1の炭化珪素領域と前記第1の面との間に位置するp型の第2の炭化珪素領域と、前記第2の炭化珪素領域と前記第1の面との間に位置し、前記第1の炭化珪素領域よりもn型不純物濃度の高いn型の第3の炭化珪素領域と、前記第1の炭化珪素領域と前記第1の面との間に位置し、前記第2の炭化珪素領域よりもp型不純物濃度の高いp型の第4の炭化珪素領域と、を含む炭化珪素層と、
前記炭化珪素層の前記第1の面の側に位置するゲート電極と、
前記ゲート電極と前記第2の炭化珪素領域との間に位置するゲート絶縁層と、
前記炭化珪素層の前記第1の面の側に位置し、前記第3の炭化珪素領域及び前記第4の炭化珪素領域に電気的に接続された第1の電極と、
前記炭化珪素層の前記第2の面の側に位置し、前記第1の炭化珪素領域に電気的に接続された第2の電極と、
前記炭化珪素層と前記第1の電極との間に位置し、前記第3の炭化珪素領域及び前記第4の炭化珪素領域に接し、ニッケル(Ni)、パラジウム(Pd)、及び、白金(Pt)からなる群から選ばれる一つの金属元素(M)のシリサイドを含み、炭素濃度が1×1017cm-3以下である導電層と、
を備える半導体装置。 - 前記導電層におけるシリコン(Si)に対する前記金属元素の原子比(M/Si)が1.2以上である請求項7記載の半導体装置。
- 前記第1の電極の炭素濃度が1×1017cm-3以下である請求項7又は請求項8記載の半導体装置。
- 前記第4の炭化珪素領域はアルミニウムを含み、前記導電層のアルミニウム濃度が1×1017cm-3以下である請求項7ないし請求項9いずれか一項記載の半導体装置。
- 前記導電層の深さが前記第3の炭化珪素領域の深さよりも深い請求項7ないし請求項10いずれか一項記載の半導体装置。
- 前記導電層の前記第1の面から前記第2の面に向かう方向の厚さは100nmより大きい請求項7ないし請求項11いずれか一項記載の半導体装置。
- 請求項1ないし請求項12いずれか一項記載の半導体装置を備えるインバータ回路。
- 請求項1ないし請求項12いずれか一項記載の半導体装置を備える駆動装置。
- 請求項1ないし請求項12いずれか一項記載の半導体装置を備える車両。
- 請求項1ないし請求項12いずれか一項記載の半導体装置を備える昇降機。
- 炭化珪素層の上に、ニッケル(Ni)、パラジウム(Pd)、及び、白金(Pt)からなる群から選ばれる一つの金属元素(M)を含む第1の金属膜を形成し、
二酸化炭素又は原子状水素の少なくともいずれか一方を含む雰囲気中で熱処理を行い、前記炭化珪素層と前記第1の金属膜とを反応させて前記金属元素を含む金属シリサイド層を形成し、
前記金属シリサイド層の上に、前記第1の金属膜と異なる化学組成の第2の金属膜を形成し、
前記熱処理の温度は900℃未満である半導体装置の製造方法。 - 炭化珪素層の上に、ニッケル(Ni)、パラジウム(Pd)、及び、白金(Pt)からなる群から選ばれる一つの金属元素(M)を含む第1の金属膜を形成し、
二酸化炭素又は原子状水素の少なくともいずれか一方を含む雰囲気中で熱処理を行い、前記炭化珪素層と前記第1の金属膜とを反応させて前記金属元素を含む金属シリサイド層を形成し、
前記金属シリサイド層の上に、前記第1の金属膜と異なる化学組成の第2の金属膜を形成し、
前記金属シリサイド層の厚さは、50nm以上500nm以下である半導体装置の製造方法。 - 前記金属シリサイド層を形成した後、前記第2の金属膜を形成する前に、未反応の前記第1の金属膜を除去する請求項17又は請求項18記載の半導体装置の製造方法。
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