JP2018082190A - 炭化ケイ素装置におけるオーミック接触のためのシステム及び方法 - Google Patents
炭化ケイ素装置におけるオーミック接触のためのシステム及び方法 Download PDFInfo
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- JP2018082190A JP2018082190A JP2017241267A JP2017241267A JP2018082190A JP 2018082190 A JP2018082190 A JP 2018082190A JP 2017241267 A JP2017241267 A JP 2017241267A JP 2017241267 A JP2017241267 A JP 2017241267A JP 2018082190 A JP2018082190 A JP 2018082190A
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- Prior art keywords
- silicon carbide
- layer
- carbide device
- nickel
- nickel silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 157
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 154
- 238000000034 method Methods 0.000 title claims abstract description 98
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 154
- 229910021334 nickel silicide Inorganic materials 0.000 claims abstract description 86
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims abstract description 86
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 73
- 238000000137 annealing Methods 0.000 claims abstract description 32
- 238000000151 deposition Methods 0.000 claims abstract description 26
- 238000005530 etching Methods 0.000 claims description 15
- 125000006850 spacer group Chemical group 0.000 claims description 14
- 238000000059 patterning Methods 0.000 claims description 6
- 229910005883 NiSi Inorganic materials 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 10
- 230000007547 defect Effects 0.000 abstract description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 229910052719 titanium Inorganic materials 0.000 description 14
- 239000010936 titanium Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000005380 borophosphosilicate glass Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000005360 phosphosilicate glass Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000411 inducer Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000005667 attractant Substances 0.000 description 1
- 230000031902 chemoattractant activity Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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Abstract
Description
en
図8へ戻り、方法70は、ゲート30と接触領域54との間に誘電スペーサを作製するために、ブロック74において堆積した共形の誘電体層のブランケットエッチングを行うステップ(ブロック76)に続く。例えば、図11へ移ると、ブロック74において堆積した誘電体層94のブランケットエッチング(例えばブロック76に記載するようなもの)の後の炭化ケイ素装置12が示されている。図11に示すように、ブランケットエッチングは、誘電体層94の殆どを除去して、接触領域54を露出させるが、ゲート28と炭化ケイ素装置12の接触領域54との間に配設されたスペーサ96を残す。ブロック74において堆積した誘電体層94の厚み及びブロック76のブランケットエッチング条件を制御することにより、誘電スペーサ96の幅98を制御し得ることを認められたい。
12:炭化ケイ素装置
14:基材本体
16:N + SiC基板
18:N+SiCバッファ層
20:N−SiCドリフト層
22:Pウェル
24:N +フィールド
26:P+ベース
28:金属ゲート
30:ゲート誘電体層
52:共形誘電体層
54:接触面積
56:エッジ
58:距離
60:ニッケル層
62:ケイ化ニッケル層
70:炭化ケイ素装置に自己整列型オーミック接触を形成する方法
90:誘電体層
92:一致型エッジ
94:誘電体層
96:スペーサ
98:スペーサ幅
100:チタン/アルミニウム層
102:ケイ化ニッケル
104:ニッケル層
Claims (13)
- 炭化ケイ素装置の接触領域と誘電フィルムとを含む表面にニッケル層を堆積させるステップと、
炭化ケイ素装置をアニールして、前記ニッケル層の一部を、1種以上のケイ化ニッケル種を含むケイ化ニッケル層であって、炭化ケイ素装置の接触領域に低抵抗接触をもたらすように構成されたケイ化ニッケル層へと転化させるステップと、
を含む方法。 - 前記低抵抗接触が10-5Ωcm2未満の接触抵抗を有する、請求項1に記載の方法。
- 前記低抵抗接触が、アニール前のニッケル層の4分の1〜10分の1の接触抵抗を有する、請求項1に記載の方法。
- 炭化ケイ素装置の表面にゲート誘電体層及びゲート電極を堆積させるステップを含む、請求項1に記載の方法。
- ゲート誘電体層及びゲート電極の上に誘電体層を共形堆積させるステップと、
電体層及びゲート誘電体層をパターニング及びエッチングして、炭化ケイ素装置の接触領域を露出させるステップと、
を含む、請求項4に記載の方法。 - ゲート誘電体層の上に第一の誘電体層を、炭化ケイ素装置の表面にゲート電極を堆積させるステップと、
第一の誘電体層及びゲート電極層をパターニング及びエッチングして、一致型エッジを形成し接触領域を露出させるステップと、
炭化ケイ素装置の表面に第二の誘電体層を共形堆積させるステップと、
第二の誘電体層をエッチングして、炭化ケイ素装置のゲート電極と接触領域との間に誘電スペーサをもたらしながら炭化ケイ素装置の接触領域を露出させるステップと、
を含む、請求項4に記載の方法。 - 誘電スペーサが、炭化ケイ素装置のゲート電極及び接触領域に対してケイ化ニッケル層を自己整列させるように構成されている、請求項6に記載の方法。
- 炭化ケイ素装置をアニールするステップが、炭化ケイ素装置を約300℃〜約1100℃でアニールするステップを含む、請求項1に記載の方法。
- 1種以上のケイ化ニッケル種がNi31Si12を含む、請求項8に記載の方法。
- 炭化ケイ素装置の1以上の誘電体表面から未反応ニッケルをエッチングするステップを含む、請求項1に記載の方法。
- 未反応ニッケルをエッチングした後に炭化ケイ素装置の2度目のアニールを行うステップを含む、請求項10に記載の方法。
- 2度目のアニールが、炭化ケイ素装置を約500℃〜約950℃でアニールするステップを含んでおり、2度目のアニールの実施後にケイ化ニッケル層がNi2Siを含む、請求項11に記載の方法。
- 2度目のアニールが、炭化ケイ素装置を約900℃〜約1100℃でアニールするステップを含んでおり、2度目のアニールの実施後にケイ化ニッケル層がNiSiを含む、請求項10に記載の方法。
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