JP2014120758A - 炭化ケイ素装置におけるオーミック接触のためのシステム及び方法 - Google Patents
炭化ケイ素装置におけるオーミック接触のためのシステム及び方法 Download PDFInfo
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- JP2014120758A JP2014120758A JP2013214306A JP2013214306A JP2014120758A JP 2014120758 A JP2014120758 A JP 2014120758A JP 2013214306 A JP2013214306 A JP 2013214306A JP 2013214306 A JP2013214306 A JP 2013214306A JP 2014120758 A JP2014120758 A JP 2014120758A
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- silicon carbide
- layer
- carbide device
- nickel
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 182
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 178
- 238000000034 method Methods 0.000 title claims description 93
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 170
- 229910021334 nickel silicide Inorganic materials 0.000 claims abstract description 96
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims abstract description 96
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000137 annealing Methods 0.000 claims description 31
- 238000000151 deposition Methods 0.000 claims description 26
- 125000006850 spacer group Chemical group 0.000 claims description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 229910052719 titanium Inorganic materials 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 7
- 229910005883 NiSi Inorganic materials 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- -1 silicon carbide metal oxide Chemical class 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000005380 borophosphosilicate glass Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000005360 phosphosilicate glass Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
【解決手段】炭化ケイ素基材の一部の上に配設されたゲート電極と、ゲート電極の上に配設された誘電フィルムとを含む炭化ケイ素装置が提供される。この装置は、ゲート電極の近傍に配設された接触領域を有し、誘電フィルム及び接触領域の上に配設された層を有する。層は、誘電フィルム上に配設された部分にニッケルを含み、接触領域上に配設された部分にケイ化ニッケルを含んでいる。ケイ化ニッケル層は、炭化ケイ素装置の接触領域にオーミック接触をもたらすように構成されている。
【選択図】図1
Description
12:炭化ケイ素装置
14:基材本体
16:N+SiC基材
18:N+SiCバッファ層
20:N−SiCドリフト層
22:Pウェル
24:N+領域
26:P+ベース
28:金属ゲート
30:ゲート誘電体層
52:共形誘電体層
54:接触領域
56:エッジ
58:距離
60:ニッケル層
62:ケイ化ニッケル層
70:炭化ケイ素装置に自己整列型オーミック接触を形成する方法
90:誘電体層
92:一致型エッジ
94:誘電体層
96:スペーサ
98:スペーサ幅
100:チタン/アルミニウム層
102:ケイ化ニッケル
104:ニッケル層
Claims (32)
- 炭化ケイ素装置であって、
炭化ケイ素基材の一部の上に配設されたゲート電極と、
ゲート電極の上に配設された誘電フィルムと、
ゲート電極の近傍に配設された当該炭化ケイ素装置の接触領域と、
誘電フィルム及び接触領域の上に配設された層であって、前記層が、誘電フィルム上に配設された部分にニッケルを含み、接触領域上に配設された部分にケイ化ニッケルを含んでおり、ケイ化ニッケル層が当該炭化ケイ素装置の接触領域にオーミック接触をもたらすように構成されている層と
を備える、炭化ケイ素装置。 - 前記ケイ化ニッケル層がゲート電極の近傍に配設されており、誘電スペーサによってゲート電極から離隔されている、請求項1記載の装置。
- 前記誘電スペーサが、ケイ化ニッケル層を当該炭化ケイ素装置の接触領域及びゲート電極に自己整列させるように構成されている、請求項2記載の装置。
- 前記ケイ化ニッケル層が、Ni31Si12、Ni2Si、NiSi又はこれらの組合せを含む、請求項1記載の装置。
- 前記オーミック接触が10-3Ωcm2未満の接触抵抗を有する、請求項1記載の装置。
- 前記オーミック接触が10-6Ωcm2未満の接触抵抗を有する、請求項5記載の装置。
- 当該炭化ケイ素装置が炭化ケイ素電力装置である、請求項1記載の装置。
- 当該炭化ケイ素装置が炭化ケイ素MOSFET又はJFET装置である、請求項1記載の装置。
- 炭化ケイ素装置であって、
炭化ケイ素基材の一部の上に配設されたゲート電極と、
ゲート電極の上に配設された誘電フィルムと、
誘電フィルムの上に配設されたニッケル層と、
ゲート電極の近傍に配設された当該炭化ケイ素装置の接触領域と、
当該炭化ケイ素装置の接触領域の上に配設された1以上の層であって、前記1以上の層が当該炭化ケイ素装置の接触領域にオーミック接触をもたらすように構成されているとともに、ケイ化ニッケル層を含む1以上の層と
を備える炭化ケイ素装置。 - 1以上の層が、当該炭化ケイ素装置の接触領域の第一の部分の上に配設されたチタン/アルミニウム層を含む、請求項9記載の装置。
- 前記チタン/アルミニウム層の上に配設されたニッケル層を含む、請求項10記載の装置。
- 前記ケイ化ニッケル層が、当該炭化ケイ素装置の接触領域の第二の部分の上のチタン/アルミニウム層に隣接して配設されている、請求項10記載の装置。
- ゲート電極を含んでおり、接触領域がゲート電極から一定の距離に隔設されるように構成されている、請求項9記載の装置。
- ゲート電極と接点バイアとの間に配設されていて、ゲート電極に対して接点バイアを自己整列させるように構成されている誘電スペーサを含む、請求項13記載の装置。
- 誘電スペーサは、当該炭化ケイ素装置の接触領域に対して接点バイアを自己整列させるように構成されている、請求項14記載の装置。
- ケイ化ニッケル層のニッケル対ケイ素比が約2.6〜約1.0である、請求項9記載の装置。
- ケイ化ニッケル層のニッケル対ケイ素比が約2.6〜約2.0である、請求項16記載の装置。
- ケイ化ニッケル層のニッケル対ケイ素比が約2.0〜約1.0である、請求項16記載の装置。
- 当該炭化ケイ素装置が炭化ケイ素金属酸化物半導体電界効果トランジスタ(MOSFET)又は接合型ゲート電界効果トランジスタ(JFET)電力装置である、請求項9記載の装置。
- 炭化ケイ素装置の接触領域と誘電フィルムとを含む表面にニッケル層を堆積させるステップと、
炭化ケイ素装置をアニールして、前記ニッケル層の一部を、1種以上のケイ化ニッケル種を含むケイ化ニッケル層であって、炭化ケイ素装置の接触領域に低抵抗接触をもたらすように構成されたケイ化ニッケル層へと転化させるステップと
を含む方法。 - 前記低抵抗接触が10-5Ωcm2未満の接触抵抗を有する、請求項20記載の方法。
- 前記低抵抗接触が、アニール前のニッケル層の4分の1〜10分の1の接触抵抗を有する、請求項20記載の方法。
- 炭化ケイ素装置の表面にゲート誘電体層及びゲート電極を堆積させるステップを含む、請求項20記載の方法。
- ゲート誘電体層及びゲート電極の上に誘電体層を共形堆積させるステップと、電体層及びゲート誘電体層をパターニング及びエッチングして、炭化ケイ素装置の接触領域を露出させるステップとを含む、請求項23記載の方法。
- ゲート誘電体層の上に第一の誘電体層を、炭化ケイ素装置の表面にゲート電極を堆積させるステップと、第一の誘電体層及びゲート電極層をパターニング及びエッチングして、一致型エッジを形成し接触領域を露出させるステップと、炭化ケイ素装置の表面に第二の誘電体層を共形堆積させるステップと、第二の誘電体層をエッチングして、炭化ケイ素装置のゲート電極と接触領域との間に誘電スペーサをもたらしながら炭化ケイ素装置の接触領域を露出させるステップとを含む、請求項23記載の方法。
- 誘電スペーサが、炭化ケイ素装置のゲート電極及び接触領域に対してケイ化ニッケル層を自己整列させるように構成されている、請求項25記載の方法。
- 炭化ケイ素装置をアニールするステップが、炭化ケイ素装置を約300℃〜約1100℃でアニールするステップを含む、請求項20記載の方法。
- 1種以上のケイ化ニッケル種がNi31Si12を含む、請求項27記載の方法。
- 炭化ケイ素装置の1以上の誘電体表面から未反応ニッケルをエッチングするステップを含む、請求項20記載の方法。
- 未反応ニッケルをエッチングした後に炭化ケイ素装置の2度目のアニールを行うステップを含む、請求項29記載の方法。
- 2度目のアニールが、炭化ケイ素装置を約500℃〜約950℃でアニールするステップを含んでおり、2度目のアニールの実施後にケイ化ニッケル層がNi2Siを含む、請求項30記載の方法。
- 2度目のアニールが、炭化ケイ素装置を約900℃〜約1100℃でアニールするステップを含んでおり、2度目のアニールの実施後にケイ化ニッケル層がNiSiを含む、請求項30記載の方法。
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