JP2019169487A - 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 - Google Patents
半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 Download PDFInfo
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- JP2019169487A JP2019169487A JP2018053609A JP2018053609A JP2019169487A JP 2019169487 A JP2019169487 A JP 2019169487A JP 2018053609 A JP2018053609 A JP 2018053609A JP 2018053609 A JP2018053609 A JP 2018053609A JP 2019169487 A JP2019169487 A JP 2019169487A
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Abstract
Description
第1の実施形態の半導体装置は、炭化珪素層と、ゲート電極と、炭化珪素層とゲート電極との間に設けられたゲート絶縁層と、炭化珪素層の中に設けられ、窒素(N)を含有する第1の領域と、第1の領域とゲート絶縁層との間に設けられ、窒素(N)、リン(P)、ヒ素(As)、アンチモン(Sb)、スカンジウム(Sc)、イットリウム(Y)、ランタン(La)、ランタノイド(Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)、水素(H)、重水素(D)、フッ素(F)から成る群から選ばれる少なくとも一つの元素を含有する第2の領域と、を備える。
図12は、第1の実施形態の半導体装置の変形例の模式断面図である。変形例のMOSFETは、終端領域40を備えない点で、第1の実施形態のMOSFET100と異なる。変形例によれば、窒素領域60を備えることで、キャリアの移動度が高く、オン抵抗の低いMOSFETが実現される。
第2の実施形態の半導体装置は、トレンチゲート型のMOSFETであること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については一部記述を省略する。
第3の実施形態の半導体装置は、MOSFETではなく、IGBT(Insulated Gate Bipolar Tansistor)あること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
第4の実施形態のインバータ回路及び駆動装置は、第1の実施形態の半導体装置を備える駆動装置である。
第5の実施形態の車両は、第1の実施形態の半導体装置を備える車両である。
第6の実施形態の車両は、第1の実施形態の半導体装置を備える車両である。
第7の実施形態の昇降機は、第1の実施形態の半導体装置を備える昇降機である。
28 ゲート絶縁層
30 ゲート電極
40 終端領域(第2の領域)
60 窒素領域(第1の領域、領域)
100 MOSFET(半導体装置)
200 MOSFET(半導体装置)
300 IGBT(半導体装置)
Claims (20)
- 炭化珪素層と、
ゲート電極と、
前記炭化珪素層と前記ゲート電極との間に設けられたゲート絶縁層と、
前記炭化珪素層の中に設けられ、窒素(N)を含有する第1の領域と、
前記第1の領域と前記ゲート絶縁層との間に設けられ、窒素(N)、リン(P)、ヒ素(As)、アンチモン(Sb)、スカンジウム(Sc)、イットリウム(Y)、ランタン(La)、ランタノイド(Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)、水素(H)、重水素(D)、フッ素(F)から成る群から選ばれる少なくとも一つの元素を含有する第2の領域と、
を備える半導体装置。 - 前記第1の領域の窒素のピーク濃度が1×1017cm−3以上1×1022cm−3以下である請求項1記載の半導体装置。
- 前記第1の領域の窒素の濃度分布の半値幅が1.5nm以上5nm以下である請求項1又は請求項2記載の半導体装置。
- 前記第2の領域の前記元素のピーク濃度が1×1018cm−3以上1×1023cm−3以下である請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記第1の領域の窒素の濃度分布のピーク位置と前記第2の領域の前記元素の濃度分布のピーク位置との間の距離が10nm以下である請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記第1の領域に、2個のシリコン原子と結合する第1の窒素原子と、前記第1の窒素原子と結合し2個のシリコン原子と結合する第2の窒素原子と、を有する請求項1ないし請求項5いずれか一項記載の半導体装置。
- 前記第1の領域の中の2個の窒素原子が炭化珪素格子の炭素位置に存在する請求項1ないし請求項5いずれか一項記載の半導体装置。
- 前記第1の領域はp型の炭化珪素である請求項1ないし請求項7いずれか一項記載の半導体装置。
- 前記ゲート絶縁層は酸化シリコンである請求項1ないし請求項8いずれか一項記載の半導体装置。
- 第1の面と第2の面とを有する炭化珪素層と、
ゲート電極と、
前記第1の面と前記ゲート電極との間に設けられたゲート絶縁層と、
前記炭化珪素層の中に前記第1の面に隣り合って設けられ、窒素(N)を含有し、窒素の濃度分布の半値幅が1.5nm以上5nm以下であり、p型の炭化珪素である領域と、
を備える半導体装置。 - 前記領域の窒素のピーク濃度が1×1017cm−3以上1×1022cm−3以下である請求項10記載の半導体装置。
- 第1の面と第2の面とを有する炭化珪素層と、
ゲート電極と、
前記第1の面と前記ゲート電極との間に設けられたゲート絶縁層と、
前記炭化珪素層の中に前記第1の面に隣り合って設けられ、窒素(N)を含有し、2個のシリコン原子と結合する第1の窒素原子と、前記第1の窒素原子と結合し2個のシリコン原子と結合する第2の窒素原子と、を有する領域と、
を備える半導体装置。 - 前記領域の窒素のピーク濃度が1×1017cm−3以上1×1022cm−3以下である請求項12記載の半導体装置。
- 請求項1ないし請求項13いずれか一項記載の半導体装置を備えるインバータ回路。
- 請求項1ないし請求項13いずれか一項記載の半導体装置を備える駆動装置。
- 請求項1ないし請求項13いずれか一項記載の半導体装置を備える車両。
- 請求項1ないし請求項13いずれか一項記載の半導体装置を備える昇降機。
- 表面が露出した炭化珪素層に対し、酸素分圧が0.1ppm以下のN2ガス中で1300℃以上1400℃以下の熱処理を行い、窒素を含む第1の領域を形成し、
前記熱処理の後、前記炭化珪素層の上にゲート絶縁層を形成し、
前記ゲート絶縁層の上にゲート電極を形成する半導体装置の製造方法。 - 前記熱処理の前に前記表面に対し、水素プラズマ処理又は電子線照射を行う請求項18記載の半導体装置の製造方法。
- 前記ゲート絶縁層と前記第1の領域の間に、窒素(N)、リン(P)、ヒ素(As)、アンチモン(Sb)、スカンジウム(Sc)、イットリウム(Y)、ランタン(La)、ランタノイド(Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu)、水素(H)、重水素(D)、フッ素(F)から成る群から選ばれる少なくとも一つの元素を含有する第2の領域を形成する請求項18又は請求項19記載の半導体装置の製造方法。
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JP2018053609A JP6862384B2 (ja) | 2018-03-21 | 2018-03-21 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
US16/113,304 US10714610B2 (en) | 2018-03-21 | 2018-08-27 | Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator |
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