JP6478862B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6478862B2 JP6478862B2 JP2015149987A JP2015149987A JP6478862B2 JP 6478862 B2 JP6478862 B2 JP 6478862B2 JP 2015149987 A JP2015149987 A JP 2015149987A JP 2015149987 A JP2015149987 A JP 2015149987A JP 6478862 B2 JP6478862 B2 JP 6478862B2
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- 239000004065 semiconductor Substances 0.000 title claims description 80
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 46
- 229910052799 carbon Inorganic materials 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 229910021332 silicide Inorganic materials 0.000 claims description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 189
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 182
- 239000010410 layer Substances 0.000 description 127
- 239000012535 impurity Substances 0.000 description 42
- 239000000758 substrate Substances 0.000 description 39
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 239000002356 single layer Substances 0.000 description 9
- 229910021334 nickel silicide Inorganic materials 0.000 description 8
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical class [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000004020 conductor Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000009279 wet oxidation reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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- H01L29/1608—Silicon carbide
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Description
本実施形態の半導体装置は、表面が、{000−1}面に対し0度以上10度以下傾斜した面であるSiC層と、ゲート電極と、表面とゲート電極との間に少なくとも一部が設けられる絶縁膜と、表面と絶縁膜との間に少なくとも一部が設けられ、炭素と炭素との結合を含む領域と、を備える。
本実施形態の半導体装置は、SiC層の表面が、法線方向が<000−1>方向に対し80度以上90度以下傾斜した面である点で、第1の実施形態と異なっている。第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、電極とSiC層の表面との間に界面領域が設けられる点で、第1の実施形態と異なっている。第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、トレンチゲート型のMISFETであること以外は、第1又は第2の実施形態と同様である。したがって、第1又は第2の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、n型のMISFETとp型MISFETが同一のSiC基板上に形成される点で第1の実施形態と異なっている。以下、界面領域の説明等、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、MISFETではなく、IGBTであること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、表面が、{000−1}面に対し0度以上10度以下傾斜した面、又は法線方向が<000−1>方向に対し80度以上90度以下傾斜した面であるSiC層と、導電層と、上記表面と導電層との間に設けられ、炭素と炭素との結合を含む領域と、を備える。以下、界面領域の説明等、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、表面が、{000−1}面に対し0度以上10度以下傾斜した面、又は法線方向が<000−1>方向に対し80度以上90度以下傾斜した面であるSiC層と、絶縁膜と、表面と絶縁膜との間に少なくとも一部が設けられ、炭素と炭素との結合を含む領域と、を備える。
本実施形態の半導体装置は、電極とSiC層の表面との間に界面領域が設けられる点で、第8の実施形態と異なっている。第8の実施形態と重複する内容については記述を省略する。
12 SiC層
14 ドリフト領域(第1のSiC領域)
16 pウェル領域(第3のSiC領域)
18 ソース領域(第2のSiC領域)
28 ゲート絶縁膜(絶縁膜)
30 ゲート電極
34 ソース電極(電極)
36 ドレイン電極
40 界面領域(領域)
80 アノード電極(導電層)
100 MISFET(半導体装置)
140 界面領域(領域)
200 MISFET(半導体装置)
210 SiC基板
216 pベース領域(第3のSiC領域)
218 エミッタ領域(第2のSiC領域)
234 エミッタ電極(電極)
236 コレクタ電極
300 MISFET(半導体装置)
400 MISFET(半導体装置)
400a n型のMISFET
400b p型のMISFET
500 IGBT(半導体装置)
600 PINダイオード(半導体装置)
Claims (17)
- 表面が、{000−1}面に対し0度以上10度以下傾斜した面、又は法線方向が<000−1>方向に対し80度以上90度以下傾斜した面であるSiC層と、
ゲート電極と、
前記表面と前記ゲート電極との間に少なくとも一部が設けられた絶縁膜と、
前記表面と前記絶縁膜との間に少なくとも一部が設けられ、シリコン−炭素−炭素−シリコン−炭素−炭素の結合を有する6員環構造を含む領域と、
を備える半導体装置。 - 前記領域は、前記表面と前記絶縁膜との間に2次元的に分布する請求項1記載の半導体装置。
- 前記SiC層、前記領域、及び、前記絶縁膜中の炭素濃度分布のピークが前記領域中に存在する請求項1又は請求項2記載の半導体装置。
- 前記SiC層中に設けられ少なくとも一部が前記領域と接する第1導電型の第1のSiC領域と、前記SiC層中に設けられ少なくとも一部が前記領域と接する第1導電型の第2のSiC領域と、前記SiC層中に設けられ少なくとも一部が前記領域と接し前記第1のSiC領域と前記第2のSiC領域との間に設けられた第2導電型の第3のSiC領域とを、更に備える請求項1乃至請求項3いずれか一項記載の半導体装置。
- 金属又は金属シリサイドの電極を、更に備え、前記電極と前記表面との間に前記領域が設けられる請求項1乃至請求項4いずれか一項記載の半導体装置。
- 金属又は金属シリサイドの電極を、更に備え、前記電極の側面と前記領域が接する請求項1乃至請求項4いずれか一項記載の半導体装置。
- 前記絶縁膜がシリコン酸化膜を含む請求項1乃至請求項6いずれか一項記載の半導体装置。
- 表面が、{000−1}面に対し0度以上10度以下傾斜した面、又は法線方向が<000−1>方向に対し80度以上90度以下傾斜した面であるSiC層と、
導電層と、
前記表面と前記導電層との間に設けられ、シリコン−炭素−炭素−シリコン−炭素−炭素の結合を有する6員環構造を含む領域と、
を備える半導体装置。 - 前記導電層は、金属又は金属シリサイドである請求項8記載の半導体装置。
- 前記領域は、前記表面と前記導電層との間に2次元的に分布する請求項8又は請求項9記載の半導体装置。
- 前記SiC層、前記領域、及び、前記導電層中の炭素濃度分布のピークが前記領域中に存在する請求項8乃至請求項10いずれか一項記載の半導体装置。
- 表面が、{000−1}面に対し0度以上10度以下傾斜した面、又は法線方向が<000−1>方向に対し80度以上90度以下傾斜した面であるSiC層と、
絶縁膜と、
前記表面と前記絶縁膜との間に少なくとも一部が設けられ、シリコン−炭素−炭素−シリコン−炭素−炭素の結合を有する6員環構造を含む領域と、
を備える半導体装置。 - 前記領域は、前記表面と前記絶縁膜との間に2次元的に分布する請求項12記載の半導体装置。
- 前記SiC層、前記領域、及び、前記絶縁膜中の炭素濃度分布のピークが前記領域中に存在する請求項12又は請求項13記載の半導体装置。
- 金属又は金属シリサイドの電極を、更に備え、前記電極と前記表面との間に前記領域が設けられる請求項12乃至請求項14いずれか一項記載の半導体装置。
- 金属又は金属シリサイドの電極を、更に備え、前記電極の側面と前記領域が接する請求項12乃至請求項14いずれか一項記載の半導体装置。
- 前記絶縁膜がシリコン酸化膜を含む請求項12乃至請求項16いずれか一項記載の半導体装置。
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