JP2017168665A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 255
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 253
- 239000012535 impurity Substances 0.000 claims description 163
- 239000010410 layer Substances 0.000 description 52
- 230000005684 electric field Effects 0.000 description 22
- 210000000746 body region Anatomy 0.000 description 19
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
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- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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Abstract
Description
本実施形態の半導体装置は、第1の電極と、第2の電極と、少なくとも一部が第1の電極と第2の電極との間に設けられた炭化珪素層と、炭化珪素層内に設けられた第1導電型の第1の炭化珪素領域と、炭化珪素層内の第1の炭化珪素領域と第1の電極との間に設けられ、第1の炭化珪素領域の第1の導電型の不純物濃度よりも第1導電型の不純物濃度が高い第1導電型の第2の炭化珪素領域と、炭化珪素層内の第1の炭化珪素領域と第1の電極との間に設けられ、第1の炭化珪素領域の第1の導電型の不純物濃度よりも第1導電型の不純物濃度が高い第1導電型の第3の炭化珪素領域と、第1の電極と第2の電極との間に設けられた第1のゲート電極と、第1の電極と第2の電極との間に設けられた第2のゲート電極と、第1の炭化珪素領域及び第2の炭化珪素領域と第1のゲート電極との間に少なくとも一部が設けられた第1のゲート絶縁膜と、第1の炭化珪素領域及び第3の炭化珪素領域と第2のゲート電極との間に少なくとも一部が設けられた第2のゲート絶縁膜と、炭化珪素層内の第1の炭化珪素領域と第2の炭化珪素領域の間、第1のゲート絶縁膜と第2のゲート絶縁膜との間に設けられた第2導電型の第4の炭化珪素領域と、炭化珪素層内の第1の炭化珪素領域と第3の炭化珪素領域の間、第4の炭化珪素領域と第2のゲート絶縁膜との間に設けられた第2導電型の第5の炭化珪素領域と、炭化珪素層内の第1の炭化珪素領域と第2の炭化珪素領域の間、第4の炭化珪素領域と第5の炭化珪素領域との間に設けられ、第1の炭化珪素領域及び第2の炭化珪素領域に接し、第4の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度が高い第2導電型の第6の炭化珪素領域と、炭化珪素層内の第1の炭化珪素領域と第3の炭化珪素領域の間、第5の炭化珪素領域と第6の炭化珪素領域との間に設けられ、第1の炭化珪素領域及び第3の炭化珪素領域に接し、第5の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度が高い第2導電型の第7の炭化珪素領域と、炭化珪素層内の第6の炭化珪素領域と第7の炭化珪素領域との間に設けられ、第6の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度が低く、第7の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度が低い第2導電型の第8の炭化珪素領域と、を備える。
本実施形態の半導体装置は、炭化珪素層内の第1の炭化珪素領域と第4の炭化珪素領域との間に設けられ、第4の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度が低い第2導電型の第9の炭化珪素領域と、炭化珪素層内の第1の炭化珪素領域と第5の炭化珪素領域との間に設けられ、第5の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度が低い第2導電型の第10の炭化珪素領域と、を更に備える点で、第1の実施形態と異なっている。
以下、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、第6の炭化珪素領域と第2の電極との距離が、第1のゲート絶縁膜と第2の電極との距離よりも短く、第7の炭化珪素領域と第2の電極との距離が、第2のゲート絶縁膜と前記第2の電極との距離よりも短い点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、炭化珪素層内の第8の炭化珪素領域内に設けられ、第2の電極との距離が、第1のゲート絶縁膜と第2の電極との距離及び第2のゲート絶縁膜と第2の電極との距離よりも短く、第8の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度が高い第2導電型の第11の炭化珪素領域を、更に備える点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については記述を省略する。
12 ソース電極(第1の電極)
14 ドレイン電極(第2の電極)
16a 第1のゲート絶縁膜
16b 第2のゲート絶縁膜
18a 第1のゲート電極
18b 第2のゲート電極
26 n−型のドリフト領域(第1の炭化珪素領域)
28a p型の第1のチャネル領域(第4の炭化珪素領域)
28b p型の第2のチャネル領域(第5の炭化珪素領域)
28c p型の中間領域(第8の炭化珪素領域)
30a n+型の第1のソース領域(第2の炭化珪素領域)
30b n+型の第2のソース領域(第3の炭化珪素領域)
34a p+型の第1のストッパー領域(第6の炭化珪素領域)
34b p+型の第2のストッパー領域(第7の炭化珪素領域)
36a p−型の第1の低濃度領域(第9の炭化珪素領域)
36b p−型の第2の低濃度領域(第10の炭化珪素領域)
38 p+型の電界緩和領域(第11の炭化珪素領域)
100 MOSFET(半導体装置)
200 MOSFET(半導体装置)
300 MOSFET(半導体装置)
400 MOSFET(半導体装置)
Claims (7)
- 第1の電極と、
第2の電極と、
少なくとも一部が前記第1の電極と前記第2の電極との間に設けられた炭化珪素層と、
前記炭化珪素層内に設けられた第1導電型の第1の炭化珪素領域と、
前記炭化珪素層内の前記第1の炭化珪素領域と前記第1の電極との間に設けられ、前記第1の炭化珪素領域の第1の導電型の不純物濃度よりも第1導電型の不純物濃度が高い第1導電型の第2の炭化珪素領域と、
前記炭化珪素層内の前記第1の炭化珪素領域と前記第1の電極との間に設けられ、前記第1の炭化珪素領域の第1の導電型の不純物濃度よりも第1導電型の不純物濃度が高い第1導電型の第3の炭化珪素領域と、
前記第1の電極と前記第2の電極との間に設けられた第1のゲート電極と、
前記第1の電極と前記第2の電極との間に設けられた第2のゲート電極と、
前記第1の炭化珪素領域及び前記第2の炭化珪素領域と前記第1のゲート電極との間に少なくとも一部が設けられた第1のゲート絶縁膜と、
前記第1の炭化珪素領域及び前記第3の炭化珪素領域と前記第2のゲート電極との間に少なくとも一部が設けられた第2のゲート絶縁膜と、
前記炭化珪素層内の前記第1の炭化珪素領域と前記第2の炭化珪素領域の間、前記第1のゲート絶縁膜と前記第2のゲート絶縁膜との間に設けられた第2導電型の第4の炭化珪素領域と、
前記炭化珪素層内の前記第1の炭化珪素領域と前記第3の炭化珪素領域の間、前記第4の炭化珪素領域と前記第2のゲート絶縁膜との間に設けられた第2導電型の第5の炭化珪素領域と、
前記炭化珪素層内の前記第1の炭化珪素領域と前記第2の炭化珪素領域の間、前記第4の炭化珪素領域と前記第5の炭化珪素領域との間に設けられ、前記第1の炭化珪素領域及び前記第2の炭化珪素領域に接し、前記第4の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度が高い第2導電型の第6の炭化珪素領域と、
前記炭化珪素層内の前記第1の炭化珪素領域と前記第3の炭化珪素領域の間、前記第5の炭化珪素領域と前記第6の炭化珪素領域との間に設けられ、前記第1の炭化珪素領域及び前記第3の炭化珪素領域に接し、前記第5の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度が高い第2導電型の第7の炭化珪素領域と、
前記炭化珪素層内の前記第6の炭化珪素領域と前記第7の炭化珪素領域との間に設けられ、前記第6の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度が低く、前記第7の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度が低い第2導電型の第8の炭化珪素領域と、
を備える半導体装置。 - 前記炭化珪素層内の前記第1の炭化珪素領域と前記第4の炭化珪素領域との間に設けられ、前記第4の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度が低い第2導電型の第9の炭化珪素領域と、
前記炭化珪素層内の前記第1の炭化珪素領域と前記第5の炭化珪素領域との間に設けられ、前記第5の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度が低い第2導電型の第10の炭化珪素領域と、
を更に備える請求項1記載の半導体装置。 - 前記第6の炭化珪素領域と前記第2の電極との距離が、前記第1のゲート絶縁膜と前記第2の電極との距離よりも長く、
前記第7の炭化珪素領域と前記第2の電極との距離が、前記第2のゲート絶縁膜と前記第2の電極との距離よりも長い請求項1又は請求項2記載の半導体装置。 - 前記炭化珪素層内の前記第1の炭化珪素領域及び前記第8の炭化珪素領域内に設けられ、前記第2の電極との距離が、前記第1のゲート絶縁膜と前記第2の電極との距離及び前記第2のゲート絶縁膜と前記第2の電極との距離よりも短く、前記第8の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度が高い第2導電型の第11の炭化珪素領域を、更に備える請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記第1のゲート絶縁膜と前記第6の炭化珪素領域との距離が10nm以上100nm以下であり、
前記第2のゲート絶縁膜と前記第7の炭化珪素領域との距離が10nm以上100nm以下である請求項1乃至請求項4いずれか一項記載の半導体装置。 - 前記第6の炭化珪素領域の第2導電型の不純物濃度が前記第4の炭化珪素領域の第2導電型の不純物濃度の2倍以上100倍以下であり、前記第7の炭化珪素領域の第2導電型の不純物濃度が前記第5の炭化珪素領域の第2導電型の不純物濃度の2倍以上100倍以下である請求項1乃至請求項5いずれか一項記載の半導体装置。
- 前記第1の炭化珪素領域と前記第2の炭化珪素領域の間の距離が0.1μm以上0.4μm以下であり、
前記第1の炭化珪素領域と前記第3の炭化珪素領域の間の距離が0.1μm以上0.4μm以下である請求項1乃至請求項6いずれか一項記載の半導体装置。
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