JP6584857B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6584857B2 JP6584857B2 JP2015159199A JP2015159199A JP6584857B2 JP 6584857 B2 JP6584857 B2 JP 6584857B2 JP 2015159199 A JP2015159199 A JP 2015159199A JP 2015159199 A JP2015159199 A JP 2015159199A JP 6584857 B2 JP6584857 B2 JP 6584857B2
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- 239000004065 semiconductor Substances 0.000 title claims description 72
- 239000000758 substrate Substances 0.000 claims description 49
- 239000012535 impurity Substances 0.000 claims description 46
- 229910010271 silicon carbide Inorganic materials 0.000 description 165
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 160
- 239000010410 layer Substances 0.000 description 79
- 230000015556 catabolic process Effects 0.000 description 36
- 230000005684 electric field Effects 0.000 description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 230000000694 effects Effects 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 229910021334 nickel silicide Inorganic materials 0.000 description 8
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical class [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 7
- 238000004088 simulation Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
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Description
本実施形態の半導体装置は、SiC基板と、SiC基板上に設けられ、表面からSiC基板に向かって伸長し、側面と底面とを有するトレンチを有するSiC層と、SiC層内に設けられた第1導電型の第1のSiC領域と、SiC層内に第1のSiC領域とSiC基板との間に設けられた第2導電型の第2のSiC領域と、SiC層内に第2のSiC領域とSiC基板との間に設けられた第1導電型の第3のSiC領域と、トレンチの側面上及び底面上に設けられ、第1のSiC領域、第2のSiC領域、及び、第3のSiC領域に接するゲート絶縁膜と、ゲート絶縁膜上に設けられたゲート電極と、を備える。そして、第2のSiC領域と第3のSiC領域との境界がトレンチの側面に接し、境界がSiC層の表面からの距離がトレンチから離れるにしたがって大きくなり表面に対して第1の傾斜角を有し、トレンチの側面からの距離が0μm以上0.3μm以下の第1の領域を備える。
pウェル領域16とドリフト領域14の境界15は、第1の領域15a、第2の領域15b、第3の領域15c、第4の領域15dを備える。
本実施形態の半導体装置は、第2のSiC領域と第3のSiC領域との境界が第4の領域を備えないこと以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、SiC層内にトレンチの底面と第3のSiC領域との間に設けられ、底面に接する第2導電型の第5のSiC領域を、更に備えること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、ソース電極34がトレンチ内に設けられること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、MISFETではなく、IGBT(Insulated Gate Bipolar Transistor)であること以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
pベース領域116とドリフト領域14の境界15は、第1の領域15a、第2の領域15b、第3の領域15c、第4の領域15dを備える。
12 SiC層
14 ドリフト領域(第3のSiC領域)
15 境界
15a 第1の領域
15b 第2の領域
15c 第3の領域
15d 第4の領域
16 pウェル領域(第2のSiC領域)
18 ソース領域(第1のSiC領域)
20 pウェルコンタクト領域(第4のSiC領域)
28 ゲート絶縁膜
30 ゲート電極
34 ソース電極
36 ドレイン電極
40 電界緩和領域(第5のSiC領域)
50 トレンチ
55 トレンチ
100 MISFET(半導体装置)
101 MISFET(半導体装置)
110 SiC基板
114 エミッタ領域(第3のSiC領域)
116 pベース領域(第2のSiC領域)
118 コレクタ領域(第1のSiC領域)
120 pベースコンタクト領域(第4のSiC領域)
134 エミッタ電極
136 コレクタ電極
200 MISFET(半導体装置)
300 MISFET(半導体装置)
400 MISFET(半導体装置)
500 IGBT(半導体装置)
Claims (17)
- SiC基板と、
前記SiC基板の上に設けられ、側面と底面とを有する第1のトレンチを表面の側に有するSiC層と、
前記SiC層内に設けられた第1導電型の第1のSiC領域と、
前記SiC層内に前記第1のSiC領域と前記SiC基板との間に設けられた第2導電型の第2のSiC領域と、
前記SiC層内に前記第2のSiC領域と前記SiC基板との間に設けられた第1導電型の第3のSiC領域と、
前記第1のトレンチの前記側面の上及び前記底面の上に設けられたゲート絶縁膜と、
前記第1のSiC領域、前記第2のSiC領域、及び、前記第3のSiC領域との間に前記ゲート絶縁膜が設けられたゲート電極と、
前記SiC層内に前記第1のトレンチの前記底面と前記第3のSiC領域との間に設けられ、前記底面に接する第2導電型の第5のSiC領域と、を備え、
前記第2のSiC領域と前記第3のSiC領域との境界は、前記第1のトレンチの前記側面の側方に在り、
前記境界は、第1の領域を備え、前記第1の領域は前記SiC層の前記表面からの距離が前記第1のトレンチから離れるにしたがって大きくなり、前記第1のトレンチの前記側面から前記第1の領域の前記第1のトレンチの側の端部までの距離が0μm以上0.3μm以下である半導体装置。 - 前記第1の領域が前記第1のトレンチの前記側面に接する請求項1記載の半導体装置。
- 前記境界が、前記SiC層の前記表面に略平行な第2の領域を備え、前記第1の領域と前記第1のトレンチとの間に前記第2の領域が設けられ、前記第2の領域が前記第1のトレンチの前記側面に接する請求項1記載の半導体装置。
- 前記第1の領域は前記表面に対して第1の傾斜角を有し、前記第1の傾斜角が15度以上70度以下である請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記第1の領域は前記表面に対して第1の傾斜角を有し、前記第1の傾斜角が15度以上60度以下である請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記境界が、前記表面に略平行な第3の領域を備え、前記第3の領域と前記第1のトレンチとの間に前記第1の領域が設けられる請求項1乃至請求項5いずれか一項記載の半導体装置。
- 前記境界が、前記表面に略垂直な第4の領域を備え、前記第4の領域と前記第1のトレンチとの間に前記第1の領域が設けられる請求項1乃至請求項6いずれか一項記載の半導体装置。
- 前記ゲート絶縁膜が酸化膜である請求項1乃至請求項7いずれか一項記載の半導体装置。
- 前記第1のトレンチの前記底面の上の前記ゲート絶縁膜の膜厚が、前記第1のトレンチの前記側面の上の前記ゲート絶縁膜の膜厚よりも厚い請求項1乃至請求項8いずれか一項記載の半導体装置。
- 前記SiC層内に前記第1のSiC領域の側方に設けられ、前記第2のSiC領域よりも第2導電型の不純物の濃度の高い第2導電型の第4のSiC領域を、更に備える請求項1乃至請求項9いずれか一項記載の半導体装置。
- 第1の電極と、
前記第1の電極との間に前記SiC層と前記SiC基板とが設けられた第2の電極と、を更に備え、
前記SiC層が、前記表面の側に第2のトレンチを有し、
前記第1のトレンチと前記第2のトレンチとの間に前記第1のSiC領域が設けられ、前記第1の電極が前記第2のトレンチ内に設けられる請求項1乃至請求項9いずれか一項記載の半導体装置。 - 前記SiC層内に前記第2のトレンチの底面と前記第3のSiC領域との間に設けられ、前記第2のSiC領域よりも第2導電型の不純物の濃度の高い第2導電型の第4のSiC領域を、更に備える請求項11記載の半導体装置。
- 前記第2のSiC領域の前記境界の部分の内角が90度以上である請求項1乃至請求項12いずれか一項記載の半導体装置。
- 前記境界は角度が90度以下の屈曲部を備えない請求項1乃至請求項12いずれか一項記載の半導体装置。
- 前記第1導電型がn型である請求項1乃至請求項14いずれか一項記載の半導体装置。
- 前記SiC基板が第1導電型である請求項1乃至請求項15いずれか一項記載の半導体装置。
- 前記SiC基板が第2導電型である請求項1乃至請求項15いずれか一項記載の半導体装置。
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CN201610645271.1A CN106449756A (zh) | 2015-08-11 | 2016-08-09 | 半导体装置 |
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JP7458217B2 (ja) | 2020-03-19 | 2024-03-29 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
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