JP6244762B2 - 炭化珪素半導体装置 - Google Patents
炭化珪素半導体装置 Download PDFInfo
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- JP6244762B2 JP6244762B2 JP2013189573A JP2013189573A JP6244762B2 JP 6244762 B2 JP6244762 B2 JP 6244762B2 JP 2013189573 A JP2013189573 A JP 2013189573A JP 2013189573 A JP2013189573 A JP 2013189573A JP 6244762 B2 JP6244762 B2 JP 6244762B2
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- silicon carbide
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- carbide semiconductor
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Description
最初に本発明の実施形態を列記して説明する。
この構成によれば、複数の開口部よりも内側の領域と複数の開口部よりも外側の領域とが分断されることを防ぐことができる。
この構成によれば、炭化珪素半導体装置の製造しやすさを向上することができる。
以下、図面に基づいて本発明の実施の形態を説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付し、その説明は繰返さない。また、本明細書中の結晶学的記載においては、個別方位を[]、集合方位を<>、個別面を()、集合面を{}でそれぞれ示している。また、負の指数については、結晶学上、”−”(バー)を数字の上に付けることになっているが、本明細書中では、数字の前に負の符号を付けている。また角度の記載には、全方位角を360度とする系を用いている。
図1は、本発明の第1の実施の形態に係る炭化珪素半導体装置1の構成を概略的に示す平面図である。図1を参照して、本発明の一実施形態に係る炭化珪素半導体装置1は、素子領域CLと、終端領域TMとを有する。素子領域CLには、複数のトランジスタ素子(図1に示さず)が配置される。終端領域TMは、素子領域CLの外側に配置される。さらにこの実施の形態では、終端領域TMは、素子領域CLを囲む。
図9は、本発明の第2の実施の形態に係る炭化珪素半導体装置1Aの構成を概略的に示す平面図である。図1および図9を参照して、炭化珪素半導体装置1Aの構成は、基本的には、第1の実施の形態に係る炭化珪素半導体装置1と同様である。ショットキー電極の配置の点において、第2の実施の形態に係る炭化珪素半導体装置1Aは、第1の実施の形態に係る炭化珪素半導体装置1と相違する。以下、この点について詳細に説明する。
図13は、本発明の第3の実施の形態に係る炭化珪素半導体装置1Bの構成を概略的に示す平面図である。図1および図13を参照して、炭化珪素半導体装置1Bの構成は、基本的には、第1の実施の形態に係る炭化珪素半導体装置1と同様である。SBDの断面形状の点において第3の実施の形態に係る炭化珪素半導体装置1Bは、第1の実施の形態に係る炭化珪素半導体装置1と相違する。以下、この点について詳細に説明する。
Claims (8)
- 炭化珪素半導体装置であって、
第1の主面と、前記第1の主面に対して反対側に位置する第2の主面とを有する炭化珪素層と、
前記第1の主面を覆う絶縁膜とを備え、
前記炭化珪素層は、
第1の導電型を有し、前記炭化珪素層の前記第1の主面を規定するドリフト層と、
前記ドリフト層に設けられて、前記第1の導電型とは異なる第2の導電型を有し、トランジスタ素子が配置される素子領域の外周部を規定する第1の領域と、
平面視において、前記ドリフト層において前記第1の領域の外側に配置され、前記第2の導電型を有し、前記第1の領域と電気的に接続される第2の領域とを含み、
前記第1の領域の前記トランジスタ素子が形成されていない領域、かつ、前記絶縁膜で覆われていない領域に、前記ドリフト層を露出させる少なくとも1つの開口部が設けられ、
前記炭化珪素半導体装置は、
前記開口部に配置されて前記ドリフト層とショットキー接合されたショットキー電極をさらに備える、炭化珪素半導体装置。 - 前記ショットキー電極は、前記ドリフト層と前記第1の領域との両方にショットキー接合される、請求項1に記載の炭化珪素半導体装置。
- 前記炭化珪素半導体装置は、
前記第1の領域に配置されて、前記第1の導電型を有する第3の領域と、
前記第1の領域に配置されて、前記第2の導電型を有する第4の領域と、
前記第3の領域、前記第4の領域および前記ショットキー電極に電気的に接続されるパッド電極とをさらに備える、請求項1または請求項2に記載の炭化珪素半導体装置。 - 前記少なくとも1つの開口部は、間隔によって互いに分離された、複数の開口部であり、
前記複数の開口部は、前記素子領域において、前記外周部に沿って配置される、請求項1から請求項3のいずれか1項に記載の炭化珪素半導体装置。 - 前記複数の開口部の間の前記間隔の長さは、一定である、請求項4に記載の炭化珪素半導体装置。
- 炭化珪素半導体装置であって、
第1の主面と、前記第1の主面に対して反対側に位置する第2の主面とを有する炭化珪素層と、
前記第1の主面を覆う絶縁膜とを備え、
前記炭化珪素層は、
第1の導電型を有し、前記炭化珪素層の前記第1の主面を規定するドリフト層と、
前記ドリフト層に設けられて、前記第1の導電型とは異なる第2の導電型を有し、トランジスタ素子が配置される素子領域の外周部を規定する第1の領域と、
平面視において、前記ドリフト層において前記第1の領域の外側に配置され、前記第2の導電型を有し、前記第1の領域と電気的に接続される第2の領域とを含み、
前記第1の領域の前記トランジスタ素子が形成されていない領域、かつ、前記絶縁膜で覆われていない領域に、前記第1の領域を貫通して前記ドリフト層に達する溝が形成され、
前記炭化珪素半導体装置は、
前記溝の内周面を覆うように配置されて前記ドリフト層とショットキー接合されたショットキー電極をさらに備える、炭化珪素半導体装置。 - 前記炭化珪素半導体装置は、
前記第2の導電型を有し、平面視において前記第1および第2の領域を囲むように、前記ドリフト層に配置されるガードリング領域をさらに備える、請求項1から請求項6のいずれか1項に記載の炭化珪素半導体装置。 - 前記第1の導電型は、n型であり、
前記第2の導電型は、p型である、請求項1から請求項7のいずれか1項に記載の炭化珪素半導体装置。
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