JP6457363B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6457363B2 JP6457363B2 JP2015179132A JP2015179132A JP6457363B2 JP 6457363 B2 JP6457363 B2 JP 6457363B2 JP 2015179132 A JP2015179132 A JP 2015179132A JP 2015179132 A JP2015179132 A JP 2015179132A JP 6457363 B2 JP6457363 B2 JP 6457363B2
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- 239000004065 semiconductor Substances 0.000 title claims description 40
- 239000012535 impurity Substances 0.000 claims description 64
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 108
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 104
- 239000010410 layer Substances 0.000 description 43
- 239000000463 material Substances 0.000 description 30
- 239000000758 substrate Substances 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 230000005684 electric field Effects 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/086—Impurity concentration or distribution
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0882—Disposition
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Description
14 ソース電極(第1の電極)
16 ドレイン電極(第2の電極)
18 ゲート絶縁膜
20 ゲート電極
24 ドリフト領域(第1のSiC領域)
26 ウェル領域(第2のSiC領域)
30 ソース領域(第3のSiC領域)
32 ソースコンタクト領域(第4のSiC領域)
100 MOSFET(半導体装置)
Claims (10)
- 第1の面を有するSiC層と、
前記第1の面上に設けられたゲート絶縁膜と、
前記ゲート絶縁膜上に設けられたゲート電極と、
前記SiC層内に設けられ、一部が前記第1の面に設けられた第1導電型の第1のSiC領域と、
前記第1のSiC領域内に設けられ、一部が前記第1の面に設けられた第2導電型の第2のSiC領域と、
前記第2のSiC領域内に設けられ、一部が前記第1の面に設けられ、前記第2のSiC領域との境界が前記第1の面との間に第1の傾斜角を有する第1導電型の第3のSiC領域と、
前記第3のSiC領域内に設けられ、一部が前記第1の面に設けられ、前記第3のSiC領域よりも第1導電型の不純物濃度が高く、前記第3のSiC領域との境界が前記第1の面との間に第1の傾斜角よりも小さい第2の傾斜角を有する第1導電型の第4のSiC領域と、
を備える半導体装置。 - 前記ゲート絶縁膜が、前記第1のSiC領域上、前記第2のSiC領域上、及び、前記第3のSiC領域上に設けられた請求項1記載の半導体装置。
- 前記第2の傾斜角は45度以上80度未満である請求項1又は請求項2記載の半導体装置。
- 前記第1の傾斜角は80度以上である請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記ゲート電極と前記第4のSiC領域が、前記第1の面に平行な方向に離間している請求項1乃至請求項4いずれか一項記載の半導体装置。
- 前記第4のSiC領域の第1導電型の不純物濃度が1×1020cm−3以上である請求項1乃至請求項5いずれか一項記載の半導体装置。
- 前記第3のSiC領域の第1導電型の不純物濃度が1×1019cm−3以下である請求項1乃至請求項6いずれか一項記載の半導体装置。
- 前記ゲート絶縁膜は、シリコン酸化膜である請求項1乃至請求項7いずれか一項記載の半導体装置。
- 前記第4のSiC領域上に設けられた第1の電極を、更に備える請求項1乃至請求項8いずれか一項記載の半導体装置。
- 前記第1の電極との間に前記SiC層を挟んで設けられた第2の電極を、更に備える請求項9記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015179132A JP6457363B2 (ja) | 2015-09-11 | 2015-09-11 | 半導体装置 |
US15/062,204 US20170077285A1 (en) | 2015-09-11 | 2016-03-07 | Semiconductor device |
TW105107639A TW201711186A (zh) | 2015-09-11 | 2016-03-11 | 半導體裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2015179132A JP6457363B2 (ja) | 2015-09-11 | 2015-09-11 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2017055011A JP2017055011A (ja) | 2017-03-16 |
JP6457363B2 true JP6457363B2 (ja) | 2019-01-23 |
Family
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Family Applications (1)
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JP2015179132A Active JP6457363B2 (ja) | 2015-09-11 | 2015-09-11 | 半導体装置 |
Country Status (3)
Country | Link |
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US (1) | US20170077285A1 (ja) |
JP (1) | JP6457363B2 (ja) |
TW (1) | TW201711186A (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112016004194B4 (de) | 2015-12-02 | 2023-02-16 | Mitsubishi Electric Corporation | Epitaxiales Substrat aus Siliciumcarbid und Siliciumcarbid-Halbleitereinrichtung |
JP6625938B2 (ja) * | 2016-07-22 | 2019-12-25 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
IT201900021204A1 (it) * | 2019-11-14 | 2021-05-14 | St Microelectronics Srl | Dispositivo mosfet in 4h-sic e relativo metodo di fabbricazione |
US11282951B2 (en) * | 2020-06-04 | 2022-03-22 | Wolfspeed, Inc. | Semiconductor power devices having graded lateral doping in the source region |
CN111969036B (zh) * | 2020-07-14 | 2022-09-13 | 西安电子科技大学 | 一种提高uis耐性的vdmosfet器件及其制备方法 |
IT202100001934A1 (it) * | 2021-01-29 | 2022-07-29 | St Microelectronics Srl | Dispositivo mosfet a conduzione verticale in carburo di silicio e relativo processo di fabbricazione |
IT202100001895A1 (it) | 2021-01-29 | 2022-07-29 | St Microelectronics Srl | Dispositivo mosfet a conduzione verticale in carburo di silicio per applicazioni di potenza e relativo processo di fabbricazione |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6289362A (ja) * | 1985-10-16 | 1987-04-23 | Tdk Corp | 縦形半導体装置およびその製造方法 |
JP2006066439A (ja) * | 2004-08-24 | 2006-03-09 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP2009064970A (ja) * | 2007-09-06 | 2009-03-26 | Toshiba Corp | 半導体装置 |
JP2011091125A (ja) * | 2009-10-21 | 2011-05-06 | Panasonic Corp | 炭化珪素半導体装置及びその製造方法 |
JP5601848B2 (ja) * | 2010-02-09 | 2014-10-08 | 三菱電機株式会社 | SiC半導体装置の製造方法 |
JP2013182905A (ja) * | 2012-02-29 | 2013-09-12 | Toshiba Corp | 半導体装置 |
-
2015
- 2015-09-11 JP JP2015179132A patent/JP6457363B2/ja active Active
-
2016
- 2016-03-07 US US15/062,204 patent/US20170077285A1/en not_active Abandoned
- 2016-03-11 TW TW105107639A patent/TW201711186A/zh unknown
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Publication number | Publication date |
---|---|
TW201711186A (zh) | 2017-03-16 |
US20170077285A1 (en) | 2017-03-16 |
JP2017055011A (ja) | 2017-03-16 |
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