IT201900021204A1 - Dispositivo mosfet in 4h-sic e relativo metodo di fabbricazione - Google Patents

Dispositivo mosfet in 4h-sic e relativo metodo di fabbricazione

Info

Publication number
IT201900021204A1
IT201900021204A1 IT102019000021204A IT201900021204A IT201900021204A1 IT 201900021204 A1 IT201900021204 A1 IT 201900021204A1 IT 102019000021204 A IT102019000021204 A IT 102019000021204A IT 201900021204 A IT201900021204 A IT 201900021204A IT 201900021204 A1 IT201900021204 A1 IT 201900021204A1
Authority
IT
Italy
Prior art keywords
sic
mosfet device
relative manufacturing
manufacturing
relative
Prior art date
Application number
IT102019000021204A
Other languages
English (en)
Inventor
Mario Giuseppe Saggio
Edoardo Zanetti
Alfio Guarnera
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT102019000021204A priority Critical patent/IT201900021204A1/it
Priority to US17/096,635 priority patent/US11329131B2/en
Priority to CN202022645154.XU priority patent/CN213752716U/zh
Priority to CN202011278853.3A priority patent/CN112802897A/zh
Publication of IT201900021204A1 publication Critical patent/IT201900021204A1/it
Priority to US17/741,310 priority patent/US20220344467A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0856—Source regions
    • H01L29/086—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
IT102019000021204A 2019-11-14 2019-11-14 Dispositivo mosfet in 4h-sic e relativo metodo di fabbricazione IT201900021204A1 (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT102019000021204A IT201900021204A1 (it) 2019-11-14 2019-11-14 Dispositivo mosfet in 4h-sic e relativo metodo di fabbricazione
US17/096,635 US11329131B2 (en) 2019-11-14 2020-11-12 4H-SiC MOSFET device and manufacturing method thereof
CN202022645154.XU CN213752716U (zh) 2019-11-14 2020-11-16 金属氧化物场效应晶体管器件和电子设备
CN202011278853.3A CN112802897A (zh) 2019-11-14 2020-11-16 4h-sic mosfet器件及其制造方法
US17/741,310 US20220344467A1 (en) 2019-11-14 2022-05-10 4h-sic mosfet device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT102019000021204A IT201900021204A1 (it) 2019-11-14 2019-11-14 Dispositivo mosfet in 4h-sic e relativo metodo di fabbricazione

Publications (1)

Publication Number Publication Date
IT201900021204A1 true IT201900021204A1 (it) 2021-05-14

Family

ID=69743876

Family Applications (1)

Application Number Title Priority Date Filing Date
IT102019000021204A IT201900021204A1 (it) 2019-11-14 2019-11-14 Dispositivo mosfet in 4h-sic e relativo metodo di fabbricazione

Country Status (3)

Country Link
US (2) US11329131B2 (it)
CN (2) CN112802897A (it)
IT (1) IT201900021204A1 (it)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006066439A (ja) * 2004-08-24 2006-03-09 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US20120223338A1 (en) * 2009-09-07 2012-09-06 Rohm Co. Ltd. Semiconductor device and method of manufacturing the same
US20160141371A1 (en) * 2013-06-26 2016-05-19 Hitachi, Ltd. Silicon carbide semiconductor device and manufacturing method of the same
WO2017169777A1 (ja) * 2016-03-29 2017-10-05 三菱電機株式会社 電力変換器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3015679B2 (ja) * 1993-09-01 2000-03-06 株式会社東芝 半導体装置およびその製造方法
JP4117385B2 (ja) * 2002-05-21 2008-07-16 独立行政法人 宇宙航空研究開発機構 宇宙線破壊耐量を有する半導体装置
JP5433352B2 (ja) * 2009-09-09 2014-03-05 株式会社東芝 半導体装置の製造方法
JP6457363B2 (ja) * 2015-09-11 2019-01-23 株式会社東芝 半導体装置
JP2017168666A (ja) * 2016-03-16 2017-09-21 株式会社東芝 半導体装置
JP6880669B2 (ja) * 2016-11-16 2021-06-02 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006066439A (ja) * 2004-08-24 2006-03-09 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US20120223338A1 (en) * 2009-09-07 2012-09-06 Rohm Co. Ltd. Semiconductor device and method of manufacturing the same
US20160141371A1 (en) * 2013-06-26 2016-05-19 Hitachi, Ltd. Silicon carbide semiconductor device and manufacturing method of the same
WO2017169777A1 (ja) * 2016-03-29 2017-10-05 三菱電機株式会社 電力変換器

Also Published As

Publication number Publication date
US20210151563A1 (en) 2021-05-20
CN112802897A (zh) 2021-05-14
US11329131B2 (en) 2022-05-10
CN213752716U (zh) 2021-07-20
US20220344467A1 (en) 2022-10-27

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