IT201700113926A1 - Dispositivo mosfet di potenza e relativo procedimento di fabbricazione - Google Patents

Dispositivo mosfet di potenza e relativo procedimento di fabbricazione

Info

Publication number
IT201700113926A1
IT201700113926A1 IT102017000113926A IT201700113926A IT201700113926A1 IT 201700113926 A1 IT201700113926 A1 IT 201700113926A1 IT 102017000113926 A IT102017000113926 A IT 102017000113926A IT 201700113926 A IT201700113926 A IT 201700113926A IT 201700113926 A1 IT201700113926 A1 IT 201700113926A1
Authority
IT
Italy
Prior art keywords
power mosfet
manufacturing procedure
mosfet device
procedure
manufacturing
Prior art date
Application number
IT102017000113926A
Other languages
English (en)
Inventor
Fabio Russo
Cristiano Gianluca Stella
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT102017000113926A priority Critical patent/IT201700113926A1/it
Priority to US16/154,411 priority patent/US10770576B2/en
Publication of IT201700113926A1 publication Critical patent/IT201700113926A1/it

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
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    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
IT102017000113926A 2017-10-10 2017-10-10 Dispositivo mosfet di potenza e relativo procedimento di fabbricazione IT201700113926A1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT102017000113926A IT201700113926A1 (it) 2017-10-10 2017-10-10 Dispositivo mosfet di potenza e relativo procedimento di fabbricazione
US16/154,411 US10770576B2 (en) 2017-10-10 2018-10-08 Power MOSFET device and manufacturing process thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT102017000113926A IT201700113926A1 (it) 2017-10-10 2017-10-10 Dispositivo mosfet di potenza e relativo procedimento di fabbricazione

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IT201700113926A1 true IT201700113926A1 (it) 2019-04-10

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Cited By (1)

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