IT201700113926A1 - Dispositivo mosfet di potenza e relativo procedimento di fabbricazione - Google Patents
Dispositivo mosfet di potenza e relativo procedimento di fabbricazioneInfo
- Publication number
- IT201700113926A1 IT201700113926A1 IT102017000113926A IT201700113926A IT201700113926A1 IT 201700113926 A1 IT201700113926 A1 IT 201700113926A1 IT 102017000113926 A IT102017000113926 A IT 102017000113926A IT 201700113926 A IT201700113926 A IT 201700113926A IT 201700113926 A1 IT201700113926 A1 IT 201700113926A1
- Authority
- IT
- Italy
- Prior art keywords
- power mosfet
- manufacturing procedure
- mosfet device
- procedure
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT102017000113926A IT201700113926A1 (it) | 2017-10-10 | 2017-10-10 | Dispositivo mosfet di potenza e relativo procedimento di fabbricazione |
US16/154,411 US10770576B2 (en) | 2017-10-10 | 2018-10-08 | Power MOSFET device and manufacturing process thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT102017000113926A IT201700113926A1 (it) | 2017-10-10 | 2017-10-10 | Dispositivo mosfet di potenza e relativo procedimento di fabbricazione |
Publications (1)
Publication Number | Publication Date |
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IT201700113926A1 true IT201700113926A1 (it) | 2019-04-10 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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IT102017000113926A IT201700113926A1 (it) | 2017-10-10 | 2017-10-10 | Dispositivo mosfet di potenza e relativo procedimento di fabbricazione |
Country Status (2)
Country | Link |
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US (1) | US10770576B2 (it) |
IT (1) | IT201700113926A1 (it) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT201900013743A1 (it) | 2019-08-01 | 2021-02-01 | St Microelectronics Srl | Dispositivo elettronico di potenza incapsulato, in particolare circuito a ponte comprendente transistori di potenza, e relativo procedimento di assemblaggio |
Families Citing this family (2)
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EP3761357A1 (en) * | 2019-07-04 | 2021-01-06 | Infineon Technologies Austria AG | Semiconductor device |
EP4113605A1 (en) * | 2021-07-02 | 2023-01-04 | Infineon Technologies AG | Power semiconductor module arrangement |
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DE102016118499B4 (de) * | 2016-09-29 | 2023-03-30 | Infineon Technologies Dresden Gmbh | Halbleiterbauelemente und Verfahren zum Bilden eines Halbleiterbauelements |
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US10770576B2 (en) | 2020-09-08 |
US20190109225A1 (en) | 2019-04-11 |
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