JP2017055027A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2017055027A JP2017055027A JP2015179328A JP2015179328A JP2017055027A JP 2017055027 A JP2017055027 A JP 2017055027A JP 2015179328 A JP2015179328 A JP 2015179328A JP 2015179328 A JP2015179328 A JP 2015179328A JP 2017055027 A JP2017055027 A JP 2017055027A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 239000012535 impurity Substances 0.000 claims description 50
- 239000013078 crystal Substances 0.000 claims description 10
- 230000007547 defect Effects 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 239000012212 insulator Substances 0.000 abstract description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 78
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 74
- 239000010410 layer Substances 0.000 description 37
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000000969 carrier Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000779 depleting effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
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Abstract
Description
本実施形態の半導体装置は、第1の面と第2の面とを有するSiC層と、第1の面上に設けられたゲート絶縁膜と、ゲート絶縁膜上に設けられたゲート電極と、SiC層内に設けられ、一部が第1の面に設けられた第1導電型の第1のSiC領域と、第1のSiC領域内に設けられ、一部が第1の面に設けられた第2導電型の第2のSiC領域と、第2のSiC領域内に設けられ、一部が第1の面に設けられた第1導電型の第3のSiC領域と、第2のSiC領域とゲート絶縁膜との間に設けられ、第1の面において第2のSiC領域に挟まれ、第1の面において第1のSiC領域と第3のSiC領域との間に設けられた第1導電型の第4のSiC領域と、を備える。
本実施形態の半導体装置は、第1の面において、第4のSiC領域と第3のSiC領域との間に、第2のSiC領域が設けられる点以外は第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
16 ゲート絶縁膜
18 ゲート電極
24 n−型のドリフト領域(第1のSiC領域)
26 p型のベース領域(第2のSiC領域)
28 n+型のソース領域(第3のSiC領域)
32 n−型の表面領域(第4のSiC領域)
100 MOSFET(半導体装置)
200 MOSFET(半導体装置)
Claims (10)
- 第1の面と第2の面とを有するSiC層と、
前記第1の面上に設けられたゲート絶縁膜と、
前記ゲート絶縁膜上に設けられたゲート電極と、
前記SiC層内に設けられ、一部が前記第1の面に設けられた第1導電型の第1のSiC領域と、
前記第1のSiC領域内に設けられ、一部が前記第1の面に設けられた第2導電型の第2のSiC領域と、
前記第2のSiC領域内に設けられ、一部が前記第1の面に設けられた第1導電型の第3のSiC領域と、
前記第2のSiC領域と前記ゲート絶縁膜との間に設けられ、前記第1の面において前記第2のSiC領域に挟まれ、前記第1の面において前記第1のSiC領域と前記第3のSiC領域との間に設けられた第1導電型の第4のSiC領域と、
を備える半導体装置。 - 前記第1の面において、前記第4のSiC領域と前記第3のSiC領域とが接する請求項1記載の半導体装置。
- 前記第2のSiC領域に挟まれる部分の前記第4のSiC領域の幅が、前記第1の面から前記第2の面に向かう方向に狭くなる請求項1又は請求項2記載の半導体装置。
- 前記第1の面において、前記第4のSiC領域と前記第3のSiC領域との間に、前記第2のSiC領域が設けられる請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記第2のSiC領域に挟まれる部分の前記第4のSiC領域の前記第1の面における幅が、1.6μm以下である請求項1乃至請求項4いずれか一項記載の半導体装置。
- 前記第4のSiC領域の結晶欠陥密度が、前記第2のSiC領域の結晶欠陥密度よりも低い請求項1乃至請求項6いずれか一項記載の半導体装置。
- 前記第2のSiC領域に挟まれる部分の前記第4のSiC領域の幅が、前記第2のSiC領域に挟まれる部分の前記第4のSiC領域の第1の面を基準とする深さよりも小さい請求項1乃至請求項7いずれか一項記載の半導体装置。
- 前記第4のSiC領域の第1導電型不純物の不純物濃度と前記第1のSiC領域の第1導電型不純物の不純物濃度とが略同一である請求項1乃至請求項8いずれか一項記載の半導体装置。
- 前記ゲート絶縁膜がシリコン酸化膜である請求項1乃至請求項9いずれか一項記載の半導体装置。
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JP6625938B2 (ja) * | 2016-07-22 | 2019-12-25 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
CN108231898B (zh) * | 2017-12-14 | 2021-07-13 | 东南大学 | 一种低导通电阻的碳化硅功率半导体器件 |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02192767A (ja) * | 1989-01-21 | 1990-07-30 | Matsushita Electric Works Ltd | 電界効果半導体装置 |
JPH10308510A (ja) * | 1997-03-05 | 1998-11-17 | Denso Corp | 炭化珪素半導体装置及びその製造方法 |
JPH1168097A (ja) * | 1997-08-18 | 1999-03-09 | Fuji Electric Co Ltd | 炭化けい素半導体装置の製造方法 |
JP2001094097A (ja) * | 1999-09-21 | 2001-04-06 | Denso Corp | 炭化珪素半導体装置及びその製造方法 |
WO2005083796A1 (ja) * | 2004-02-27 | 2005-09-09 | Rohm Co., Ltd. | 半導体装置およびその製造方法 |
JP2008192691A (ja) * | 2007-02-01 | 2008-08-21 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
WO2010044226A1 (ja) * | 2008-10-17 | 2010-04-22 | パナソニック株式会社 | 半導体装置およびその製造方法 |
JP2014140082A (ja) * | 2014-05-07 | 2014-07-31 | Rohm Co Ltd | 半導体装置およびその製造方法 |
WO2015198468A1 (ja) * | 2014-06-27 | 2015-12-30 | 三菱電機株式会社 | 炭化珪素半導体装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6956238B2 (en) * | 2000-10-03 | 2005-10-18 | Cree, Inc. | Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel |
JP4029595B2 (ja) * | 2001-10-15 | 2008-01-09 | 株式会社デンソー | SiC半導体装置の製造方法 |
JP3985727B2 (ja) * | 2003-05-12 | 2007-10-03 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
JP2008085188A (ja) * | 2006-09-28 | 2008-04-10 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
JP2009088005A (ja) * | 2007-09-27 | 2009-04-23 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
US20110012132A1 (en) * | 2008-02-06 | 2011-01-20 | Rohm Co., Ltd. | Semiconductor Device |
JP5728153B2 (ja) | 2008-09-26 | 2015-06-03 | 株式会社東芝 | 半導体装置の製造方法 |
WO2011033550A1 (ja) | 2009-09-15 | 2011-03-24 | 株式会社 東芝 | 半導体装置 |
CN102194885B (zh) * | 2011-05-12 | 2013-06-26 | 西安电子科技大学 | N型隐埋沟道的碳化硅demosfet器件及制备方法 |
CN102244099B (zh) * | 2011-06-23 | 2013-04-17 | 西安电子科技大学 | 外延沟道的SiCIEMOSFET器件及制备方法 |
JP2013093440A (ja) | 2011-10-26 | 2013-05-16 | Kansai Electric Power Co Inc:The | 電界効果トランジスタの製造方法および電界効果トランジスタ |
JP6032831B2 (ja) | 2012-03-07 | 2016-11-30 | 国立研究開発法人産業技術総合研究所 | SiC半導体装置及びその製造方法 |
CN104538450A (zh) * | 2014-12-29 | 2015-04-22 | 中国科学院半导体研究所 | 具有低特征导通电阻的SiC VDMOSFET结构及其制造方法 |
-
2015
- 2015-09-11 JP JP2015179328A patent/JP6523887B2/ja active Active
-
2016
- 2016-01-26 TW TW105102381A patent/TW201711197A/zh unknown
- 2016-01-29 CN CN201610064394.6A patent/CN106531799B/zh active Active
- 2016-03-11 US US15/067,438 patent/US9786742B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02192767A (ja) * | 1989-01-21 | 1990-07-30 | Matsushita Electric Works Ltd | 電界効果半導体装置 |
JPH10308510A (ja) * | 1997-03-05 | 1998-11-17 | Denso Corp | 炭化珪素半導体装置及びその製造方法 |
JPH1168097A (ja) * | 1997-08-18 | 1999-03-09 | Fuji Electric Co Ltd | 炭化けい素半導体装置の製造方法 |
JP2001094097A (ja) * | 1999-09-21 | 2001-04-06 | Denso Corp | 炭化珪素半導体装置及びその製造方法 |
WO2005083796A1 (ja) * | 2004-02-27 | 2005-09-09 | Rohm Co., Ltd. | 半導体装置およびその製造方法 |
JP2008192691A (ja) * | 2007-02-01 | 2008-08-21 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
WO2010044226A1 (ja) * | 2008-10-17 | 2010-04-22 | パナソニック株式会社 | 半導体装置およびその製造方法 |
JP2014140082A (ja) * | 2014-05-07 | 2014-07-31 | Rohm Co Ltd | 半導体装置およびその製造方法 |
WO2015198468A1 (ja) * | 2014-06-27 | 2015-12-30 | 三菱電機株式会社 | 炭化珪素半導体装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018173599A1 (ja) | 2017-03-21 | 2018-09-27 | 日本電気株式会社 | 供給制御装置、供給機、供給制御方法、プログラム |
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