CN102194885B - N型隐埋沟道的碳化硅demosfet器件及制备方法 - Google Patents
N型隐埋沟道的碳化硅demosfet器件及制备方法 Download PDFInfo
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- CN102194885B CN102194885B CN201110122724.XA CN201110122724A CN102194885B CN 102194885 B CN102194885 B CN 102194885B CN 201110122724 A CN201110122724 A CN 201110122724A CN 102194885 B CN102194885 B CN 102194885B
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 72
- -1 silicon carbide metal oxide Chemical class 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000004065 semiconductor Substances 0.000 title abstract description 6
- 229910044991 metal oxide Inorganic materials 0.000 title abstract 3
- 230000005669 field effect Effects 0.000 title abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 111
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 68
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 58
- 238000009792 diffusion process Methods 0.000 claims abstract description 21
- 238000002513 implantation Methods 0.000 claims description 66
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 30
- 230000003647 oxidation Effects 0.000 claims description 27
- 238000007254 oxidation reaction Methods 0.000 claims description 27
- 238000005229 chemical vapour deposition Methods 0.000 claims description 23
- 238000000137 annealing Methods 0.000 claims description 21
- 239000012535 impurity Substances 0.000 claims description 21
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 19
- 239000012159 carrier gas Substances 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 19
- 229910000077 silane Inorganic materials 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 15
- 239000001294 propane Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 239000002019 doping agent Substances 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical group C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 4
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical group [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000006872 improvement Effects 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000446 fuel Substances 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 230000036632 reaction speed Effects 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 30
- 238000005530 etching Methods 0.000 description 20
- 238000001259 photo etching Methods 0.000 description 20
- 238000002347 injection Methods 0.000 description 19
- 239000007924 injection Substances 0.000 description 19
- 150000002500 ions Chemical class 0.000 description 18
- 238000005468 ion implantation Methods 0.000 description 16
- 229910052786 argon Inorganic materials 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 15
- 238000004140 cleaning Methods 0.000 description 15
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 15
- 238000002161 passivation Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 238000000407 epitaxy Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
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CN201110122724.XA CN102194885B (zh) | 2011-05-12 | 2011-05-12 | N型隐埋沟道的碳化硅demosfet器件及制备方法 |
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CN102194885B true CN102194885B (zh) | 2013-06-26 |
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Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102496559A (zh) * | 2011-11-25 | 2012-06-13 | 中国科学院微电子研究所 | 一种三层复合离子注入阻挡层及其制备、去除方法 |
CN102509702A (zh) * | 2011-12-28 | 2012-06-20 | 上海贝岭股份有限公司 | 一种用于平面型功率mosfet的外延制作方法 |
CN102832248A (zh) * | 2012-09-10 | 2012-12-19 | 西安电子科技大学 | 基于半超结的碳化硅mosfet及制作方法 |
CN103400860B (zh) * | 2013-08-21 | 2017-04-19 | 东南大学 | 一种高击穿电压的n型纵向碳化硅金属氧化物半导体管 |
CN105097540B (zh) * | 2014-05-21 | 2018-07-24 | 北大方正集团有限公司 | 平面vdmos器件的制造方法 |
CN104009088B (zh) * | 2014-05-29 | 2017-04-12 | 西安电子科技大学 | 一种栅控垂直双扩散金属‑氧化物半导体场效应晶体管 |
CN104201204B (zh) * | 2014-08-13 | 2015-06-17 | 四川广义微电子股份有限公司 | 横向对称dmos管制造方法 |
CN104319292A (zh) * | 2014-11-06 | 2015-01-28 | 株洲南车时代电气股份有限公司 | 一种新型碳化硅mosfet及其制造方法 |
CN104538450A (zh) * | 2014-12-29 | 2015-04-22 | 中国科学院半导体研究所 | 具有低特征导通电阻的SiC VDMOSFET结构及其制造方法 |
JP6523887B2 (ja) * | 2015-09-11 | 2019-06-05 | 株式会社東芝 | 半導体装置 |
CN105185833B (zh) * | 2015-09-25 | 2020-01-03 | 国网智能电网研究院 | 一种隐埋沟道碳化硅沟槽栅MOSFETs器件及其制备方法 |
CN107046059B (zh) * | 2016-02-05 | 2020-04-21 | 瀚薪科技股份有限公司 | 碳化硅半导体元件以及其制造方法 |
CN105810722B (zh) * | 2016-03-16 | 2019-04-30 | 中国科学院半导体研究所 | 一种碳化硅mosfet器件及其制备方法 |
CN107170672A (zh) * | 2017-05-18 | 2017-09-15 | 上海先进半导体制造股份有限公司 | Vdmos的栅氧生长方法 |
CN107895738B (zh) * | 2017-11-03 | 2020-02-18 | 中国电子科技集团公司第五十五研究所 | 一种阱局部高掺的mos型器件及制备方法 |
CN107994077B (zh) * | 2017-12-13 | 2020-08-28 | 南京溧水高新创业投资管理有限公司 | 垂直双扩散场效应晶体管及其制作方法 |
CN109585541B (zh) * | 2018-12-27 | 2024-03-26 | 西安中车永电电气有限公司 | 一种埋沟式SiC IGBT常关器件及其制备方法 |
CN109728097B (zh) * | 2018-12-29 | 2022-01-11 | 安建科技(深圳)有限公司 | 一种功率半导体mos器件及其制备方法 |
CN116613215B (zh) * | 2023-06-26 | 2024-07-19 | 陕西亚成微电子股份有限公司 | 一种线性平面功率vdmos结构及其制备方法 |
Citations (1)
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CN101124678A (zh) * | 2004-12-01 | 2008-02-13 | 半南实验室公司 | 宽能带隙半导体的常关集成jfet功率开关及其制造方法 |
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US7633101B2 (en) * | 2006-07-11 | 2009-12-15 | Dsm Solutions, Inc. | Oxide isolated metal silicon-gate JFET |
US7989882B2 (en) * | 2007-12-07 | 2011-08-02 | Cree, Inc. | Transistor with A-face conductive channel and trench protecting well region |
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Patent Citations (1)
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CN101124678A (zh) * | 2004-12-01 | 2008-02-13 | 半南实验室公司 | 宽能带隙半导体的常关集成jfet功率开关及其制造方法 |
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Application publication date: 20110921 Assignee: YANGZHOU YANGJIE ELECTRONIC TECHNOLOGY Co.,Ltd. Assignor: Xidian University Contract record no.: 2017610000002 Denomination of invention: N-type buried-channel silicon carbide metal oxide semiconductor field effect transistor (DEMOSFET) device and preparation method thereof Granted publication date: 20130626 License type: Exclusive License Record date: 20170209 |
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Effective date of registration: 20231225 Address after: Room 203-18, Building 1, No. 1433 Renmin East Road, Gaobu Street, Yuecheng District, Shaoxing City, Zhejiang Province, 312035 Patentee after: Xinlian Power Technology (Shaoxing) Co.,Ltd. Address before: No. 518, Linjiang Road, Gaobu Town, Yuecheng District, Shaoxing City, Zhejiang Province Patentee before: Shaoxing SMIC integrated circuit manufacturing Co.,Ltd. |