JP7003019B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7003019B2 JP7003019B2 JP2018173141A JP2018173141A JP7003019B2 JP 7003019 B2 JP7003019 B2 JP 7003019B2 JP 2018173141 A JP2018173141 A JP 2018173141A JP 2018173141 A JP2018173141 A JP 2018173141A JP 7003019 B2 JP7003019 B2 JP 7003019B2
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- 239000004065 semiconductor Substances 0.000 title claims description 48
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 199
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 195
- 239000012535 impurity Substances 0.000 claims description 95
- 210000000746 body region Anatomy 0.000 description 148
- 239000010410 layer Substances 0.000 description 74
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 238000000034 method Methods 0.000 description 17
- 230000007423 decrease Effects 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 230000007547 defect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 239000000969 carrier Substances 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005421 electrostatic potential Methods 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
第1の実施形態の半導体装置は、第1の面と第1の面に対向する第2の面とを有する炭化珪素層と、炭化珪素層の第1の面の側に設けられた第1の電極と、炭化珪素層の第2の面の側に設けられた第2の電極と、炭化珪素層の中の第1導電型の第1の炭化珪素領域と、第1の炭化珪素領域と第1の面との間に設けられ、第1の面に接する第1の部分を有する第2導電型の第2の炭化珪素領域と、第1の炭化珪素領域と第1の面との間に設けられ、第2の炭化珪素領域と離間した第2導電型の第3の炭化珪素領域と、第2の炭化珪素領域と第1の面との間に設けられ、第1の電極と接する第1導電型の第4の炭化珪素領域と、第1の炭化珪素領域と第2の炭化珪素領域との間に設けられ、第1の炭化珪素領域よりも第1導電型不純物濃度の高い第1導電型の第5の炭化珪素領域と、第1の炭化珪素領域と第3の炭化珪素領域との間に設けられ、第1の炭化珪素領域よりも第1導電型不純物濃度の高い第1導電型の第6の炭化珪素領域と、第5の炭化珪素領域と第6の炭化珪素領域との間に設けられ、第5の炭化珪素領域及び第6の炭化珪素領域よりも第1導電型不純物濃度の低い第7の炭化珪素領域と、第7の炭化珪素領域と第1の面との間に設けられ第1の電極と接する第1導電型の第8の炭化珪素領域と、炭化珪素層の第1の面の側に設けられ、第2の炭化珪素領域の第1の部分と対向するゲート電極と、ゲート電極と第1の部分との間に設けられたゲート絶縁層と、を備える。
第2の実施形態のMOSFETは、第9の炭化珪素領域は、第1の部分と第1の炭化珪素領域との間に位置する点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については一部記述を省略する。
第3の実施形態のMOSFETは、第9の炭化珪素領域は、第4の炭化珪素領域が第1の電極と接する部分と第1の炭化珪素領域との間に位置する点で、第1の実施形態及び第2の実施形態と異なっている。以下、第1の実施形態及び第2の実施形態と重複する内容については一部記述を省略する。
12 ソース電極(第1の電極)
14 ドレイン電極(第2の電極)
16 ゲート絶縁層
18 ゲート電極
24 ドリフト領域(第1の炭化珪素領域)
26a 第1のボディ領域(第2の炭化珪素領域)
26b 第2のボディ領域(第3の炭化珪素領域)
28a 第1のソース領域(第4の炭化珪素領域)
34a 第1の高濃度領域(第5の炭化珪素領域)
34b 第2の高濃度領域(第6の炭化珪素領域)
36a 第1の低濃度領域(第7の炭化珪素領域)
36b 第2の低濃度領域(第9の炭化珪素領域)
38 SBDカソード領域(第8の炭化珪素領域)
100 MOSFET(半導体装置)
200 MOSFET(半導体装置)
300 MOSFET(半導体装置)
B1 第1の部分
B2 第2の部分
P1 第1の面
P2 第2の面
Px 平面
Claims (4)
- 第1の面と前記第1の面に対向する第2の面とを有する炭化珪素層と、
前記炭化珪素層の前記第1の面の側に設けられた第1の電極と、
前記炭化珪素層の前記第2の面の側に設けられた第2の電極と、
前記炭化珪素層の中の第1導電型の第1の炭化珪素領域と、
前記第1の炭化珪素領域と前記第1の面との間に設けられ、前記第1の面に接する第1の部分を有する第2導電型の第2の炭化珪素領域と、
前記第1の炭化珪素領域と前記第1の面との間に設けられ、前記第2の炭化珪素領域と離間した第2導電型の第3の炭化珪素領域と、
前記第2の炭化珪素領域と前記第1の面との間に設けられ、前記第1の電極と接する第1導電型の第4の炭化珪素領域と、
前記第1の炭化珪素領域と前記第2の炭化珪素領域との間に設けられ、前記第1の炭化珪素領域よりも第1導電型不純物濃度の高い第1導電型の第5の炭化珪素領域と、
前記第1の炭化珪素領域と前記第3の炭化珪素領域との間に設けられ、前記第1の炭化珪素領域よりも第1導電型不純物濃度の高い第1導電型の第6の炭化珪素領域と、
前記第5の炭化珪素領域と前記第6の炭化珪素領域との間に設けられ、前記第5の炭化珪素領域及び前記第6の炭化珪素領域よりも第1導電型不純物濃度の低い第1導電型の第7の炭化珪素領域と、
前記第7の炭化珪素領域と前記第1の面との間に設けられ前記第1の電極と接する第1導電型の第8の炭化珪素領域と、
前記炭化珪素層の前記第1の面の側に設けられ、前記第2の炭化珪素領域の前記第1の部分と対向するゲート電極と、
前記ゲート電極と前記第1の部分との間に設けられたゲート絶縁層と、
前記第1の炭化珪素領域と前記ゲート電極との間に設けられ、前記第1の面に垂直な方向において、前記第1の部分と前記第1の炭化珪素領域との間に位置し、前記第5の炭化珪素領域よりも第1導電型不純物濃度の低い第9の炭化珪素領域と、
を備え、
前記第2の炭化珪素領域は、前記第1の面に接し、前記第8の炭化珪素領域と隣り合い、前記第1の電極に接する第2の部分を有し、
前記方向において、前記第2の部分と前記第1の炭化珪素領域との間に前記第5の炭化珪素領域が位置する半導体装置。 - 前記第5の炭化珪素領域は、前記第2の炭化珪素領域における前記第3の炭化珪素領域の側の端部と前記第1の炭化珪素領域との間に位置する請求項1記載の半導体装置。
- 前記第9の炭化珪素領域は、前記第4の炭化珪素領域が前記第1の電極と接する部分と前記第1の炭化珪素領域との間に位置する請求項1又は請求項2記載の半導体装置。
- 前記第7の炭化珪素領域の第1導電型不純物濃度は、前記第5の炭化珪素領域の第1導電型不純物濃度の5%以上80%以下である請求項1ないし請求項3いずれか一項記載の半導体装置。
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