JP2017168668A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2017168668A JP2017168668A JP2016053107A JP2016053107A JP2017168668A JP 2017168668 A JP2017168668 A JP 2017168668A JP 2016053107 A JP2016053107 A JP 2016053107A JP 2016053107 A JP2016053107 A JP 2016053107A JP 2017168668 A JP2017168668 A JP 2017168668A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 157
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 153
- 239000012535 impurity Substances 0.000 claims description 99
- 229910021332 silicide Inorganic materials 0.000 claims description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 39
- 210000000746 body region Anatomy 0.000 description 30
- 238000000034 method Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
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Abstract
Description
本実施形態の半導体装置は、第1の電極と、第2の電極と、少なくとも一部が第1の電極と第2の電極との間に設けられた炭化珪素層と、炭化珪素層内に設けられた第1導電型の第1の炭化珪素領域と、第1の電極と第1の炭化珪素領域との間の炭化珪素層内に設けられた第2導電型の第2の炭化珪素領域と、第2の電極との間に第1の炭化珪素領域が位置するように設けられた第1のゲート電極と、第2の電極との間に第1の炭化珪素領域が位置するように設けられた第2のゲート電極と、第2の炭化珪素領域と第1のゲート電極との間に設けられた第1のゲート絶縁膜と、第2の炭化珪素領域と第2のゲート電極との間に設けられた第2のゲート絶縁膜と、第1のゲート電極と第2のゲート電極との間の炭化珪素層内に、第1の電極と第2の炭化珪素領域との間に、第1の電極と第1の接触面で接して設けられ、第1の炭化珪素領域の第1導電型の不純物濃度よりも第1導電型の不純物濃度が高い第1導電型の第3の炭化珪素領域と、第1のゲート電極と第2のゲート電極との間の炭化珪素層内に、第1の電極と第2の炭化珪素領域との間に、第1の電極と第2の接触面で接して設けられ、第2の接触面と第2の電極との距離が第1の接触面と第2の電極との距離よりも短く、第2の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度が高い第2導電型の第4の炭化珪素領域と、第1のゲート電極と第2のゲート電極との間の炭化珪素層内に、第1の電極と第2の炭化珪素領域との間に、第1の電極と第3の接触面で接して、第1のゲート電極及び第2のゲート電極の伸長方向において第4の炭化珪素領域との間の炭化珪素層内に第2の炭化珪素領域が位置するように設けられ、第3の接触面と第2の電極との距離が第1の接触面と第2の電極との距離よりも短く、第2の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度が高い第2導電型の第5の炭化珪素領域と、を備える。
本実施形態の半導体装置は、第3の炭化珪素領域と第4の炭化珪素領域との間の炭化珪素層内に、第1の電極と第4の接触面で接して設けられ、第1の炭化珪素領域の第1導電型の不純物濃度よりも第1導電型の不純物濃度が高い第1導電型の第6の炭化珪素領域と、第3の炭化珪素領域と第5の炭化珪素領域との間の炭化珪素層内に、第1の電極と第5の接触面で接して設けられ、第1の炭化珪素領域の第1導電型の不純物濃度よりも第1導電型の不純物濃度が高い第1導電型の第7の炭化珪素領域と、を更に備える点で第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については、記述を省略する。
12 ソース電極(第1の電極)
12a シリサイド領域
14 ドレイン電極(第2の電極)
16a 第1のゲート絶縁膜
16b 第2のゲート絶縁膜
18a 第1のゲート電極
18b 第2のゲート電極
26 n−型のドリフト領域(第1の炭化珪素領域)
28 p型のボディ領域(第2の炭化珪素領域)
30 n+型のソース領域(第3の炭化珪素領域)
32a p+型の第1のボディコンタクト領域(第4の炭化珪素領域)
32b p+型の第2のボディコンタクト領域(第5の炭化珪素領域)
34a n+型の第1のソースコンタクト領域(第6の炭化珪素領域)
34b n+型の第2のソースコンタクト領域(第7の炭化珪素領域)
100 MOSFET(半導体装置)
200 MOSFET(半導体装置)
CP1 第1の接触面
CP1a 第1の領域
CP1b 第2の領域
CP2 第2の接触面
CP3 第3の接触面
CP4 第4の接触面
CP5 第5の接触面
Claims (6)
- 第1の電極と、
第2の電極と、
少なくとも一部が前記第1の電極と前記第2の電極との間に設けられた炭化珪素層と、
前記炭化珪素層内に設けられた第1導電型の第1の炭化珪素領域と、
前記第1の電極と前記第1の炭化珪素領域との間の前記炭化珪素層内に設けられた第2導電型の第2の炭化珪素領域と、
前記第2の電極との間に前記第1の炭化珪素領域が位置するように設けられた第1のゲート電極と、
前記第2の電極との間に前記第1の炭化珪素領域が位置するように設けられた第2のゲート電極と、
前記第2の炭化珪素領域と前記第1のゲート電極との間に設けられた第1のゲート絶縁膜と、
前記第2の炭化珪素領域と前記第2のゲート電極との間に設けられた第2のゲート絶縁膜と、
少なくとも一部が前記第1のゲート電極と前記第2のゲート電極との間の前記炭化珪素層内に設けられ、前記第1の電極と前記第2の炭化珪素領域との間に設けられ、前記第1の電極と第1の接触面で接して設けられ、前記第1の炭化珪素領域の第1導電型の不純物濃度よりも第1導電型の不純物濃度が高い第1導電型の第3の炭化珪素領域と、
前記第1のゲート電極と前記第2のゲート電極との間の前記炭化珪素層内に設けられ、前記第1の電極と前記第2の炭化珪素領域との間に設けられ、前記第1の電極と第2の接触面で接して設けられ、前記第2の接触面と前記第2の電極との距離が前記第1の接触面と前記第2の電極との距離よりも短く、前記第2の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度が高い第2導電型の第4の炭化珪素領域と、
前記第1のゲート電極と前記第2のゲート電極との間の前記炭化珪素層内に設けられ、前記第1の電極と前記第2の炭化珪素領域との間に設けられ、前記第1の電極と第3の接触面で接して設けられ、前記第1のゲート電極及び前記第2のゲート電極の伸長方向において前記第4の炭化珪素領域との間の前記炭化珪素層内に前記第2の炭化珪素領域が位置するように設けられ、前記第3の接触面と前記第2の電極との距離が前記第1の接触面と前記第2の電極との距離よりも短く、前記第2の炭化珪素領域の第2導電型の不純物濃度よりも第2導電型の不純物濃度が高い第2導電型の第5の炭化珪素領域と、
を備える半導体装置。 - 前記第3の炭化珪素領域と前記第4の炭化珪素領域との間の前記炭化珪素層内に設けられ、前記第1の電極と第4の接触面で接して設けられ、前記第1の炭化珪素領域の第1導電型の不純物濃度よりも第1導電型の不純物濃度が高い第1導電型の第6の炭化珪素領域と、
前記第3の炭化珪素領域と前記第5の炭化珪素領域との間の前記炭化珪素層内に設けられ、前記第1の電極と第5の接触面で接して設けられ、前記第1の炭化珪素領域の第1導電型の不純物濃度よりも第1導電型の不純物濃度が高い第1導電型の第7の炭化珪素領域とを、
更に備える請求項1記載の半導体装置。 - 前記第1のゲート電極及び前記第2のゲート電極の伸長方向において前記第4の炭化珪素領域の幅及び前記第5の炭化珪素領域の幅が、前記第4の炭化珪素領域と前記第5の炭化珪素領域との間隔よりも大きい請求項1又は請求項2記載の半導体装置。
- 前記第4の炭化珪素領域と前記第5の炭化珪素領域との間隔が10μm以下である請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記第1の接触面が、第1の領域と前記第1の領域に対して傾斜する第2の領域を備える請求項1乃至請求項4いずれか一項記載の半導体装置。
- 前記第1の電極の前記第3の炭化珪素領域、前記第4の炭化珪素領域、及び、前記第5の炭化珪素領域と接する部分がシリサイドを含む請求項1乃至請求項5いずれか一項記載の半導体装置。
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