JP2016163049A - ダイオード領域用のゲート電極とコンタクト構造とを含んでいるトレンチ構造を備えた半導体デバイス - Google Patents
ダイオード領域用のゲート電極とコンタクト構造とを含んでいるトレンチ構造を備えた半導体デバイス Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 152
- 239000000758 substrate Substances 0.000 claims description 41
- 239000013078 crystal Substances 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 35
- 239000002019 doping agent Substances 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 17
- 238000003892 spreading Methods 0.000 claims description 15
- 230000007480 spreading Effects 0.000 claims description 15
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 9
- 125000006850 spacer group Chemical group 0.000 claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 97
- 239000011229 interlayer Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 230000000903 blocking effect Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- 239000007943 implant Substances 0.000 description 7
- 229910021332 silicide Inorganic materials 0.000 description 7
- 239000005388 borosilicate glass Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 239000005360 phosphosilicate glass Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000005380 borophosphosilicate glass Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- -1 FET metal oxide Chemical class 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910016570 AlCu Inorganic materials 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
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- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66719—With a step of forming an insulating sidewall spacer
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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Abstract
【解決手段】トレンチ構造(350)はそれぞれ、ゲート構造(150)と、ゲート構造(150)を通って延在するコンタクト構造(315)とを含んでいる。トランジスタメサ部(170)は、これらのトレンチ構造(350)の間に設けられている。各トランジスタメサ部(170)はボディゾーン(115)を含んでおり、このボディゾーン(115)は、ドリフト構造(120)と第1のpn接合部(pn1)を形成し、ソースゾーン(110)と第2のpn接合部(pn2)を形成する。ダイオード領域(116)はそれぞれ、直接的に、複数のコンタクト構造(315)のうちの1つと隣接し、かつ、ドリフト構造(120)と第3のpn接合部(pn3)を形成する。
【選択図】図2B
Description
Claims (22)
- 複数のトレンチ構造(350)と複数のトランジスタメサ部(170)と複数のダイオード領域(116)とを有する半導体デバイスであって、
前記トレンチ構造(350)はそれぞれ、第1の表面(101)から半導体ボディ(100)内へ延在し、かつ、ゲート構造(150)と、前記ゲート構造(150)を通って延在するコンタクト構造(315)と、を含んでおり、
前記トランジスタメサ部(170)は、前記複数のトレンチ構造(350)の間に設けられており、各トランジスタメサ部(170)は、ボディゾーン(115)を含んでおり、前記ボディゾーン(115)は、ドリフト構造(120)とともに第1のpn接合部(pn1)を形成し、かつ、ソースゾーン(110)とともに第2のpn接合部(pn2)を形成し、
前記ダイオード領域(116)はそれぞれ、直接的に、前記複数のコンタクト構造(315)のうちの1つと隣接し、かつ、前記ドリフト構造(120)とともに第3のpn接合部(pn3)を形成し、前記ドリフト構造(120)は、ドリフトゾーン(121)と電流拡散ゾーン(122)とを含んでおり、前記電流拡散ゾーン(122)は、前記第2のpn接合部(pn2)を形成し、前記電流拡散ゾーン(122)における平均ドーパント濃度は、前記ドリフトゾーン(121)における平均ドーパント濃度の少なくとも2倍である、
ことを特徴とする半導体デバイス。 - 前記トレンチ構造(350)は、ストリップ状である、
請求項1記載の半導体デバイス。 - 平均表面(101x)に対して平行な前記トレンチ構造(350)の第1の水平方向寸法は最大で、第2の水平方向寸法の5倍であり、前記第2の水平方向寸法は、前記平均表面(101x)に対して平行であり、かつ、第1の水平方向に直交している、
請求項1記載の半導体デバイス。 - 前記第1の水平方向寸法と前記第2の水平方向寸法との差は、10%以下である、
請求項3記載の半導体デバイス。 - 前記コンタクト構造(315)は、前記コンタクト構造(315)の第1の側にある、前記ゲート構造(150)の第1のゲート部分(150x)と、前記コンタクト構造(315)の、前記第1の側とは反対側の第2の側にある、前記ゲート構造(150)の第2のゲート部分(150y)と、の間に挟まれている、
請求項1から4のいずれか記載の半導体デバイス。 - 前記ゲート構造(150)は、前記コンタクト構造(315)を包囲している、
請求項1から5のいずれか記載の半導体デバイス。 - 前記ダイオード領域(116)の幅は、前記トレンチ構造(350)の、対応する幅よりも狭い、
請求項1から6のいずれか記載の半導体デバイス。 - 前記ドリフト構造(120)は、ドリフトゾーン(121)とアバランシェ調整ゾーン(123)とを含んでおり、
前記アバランシェ調整ゾーン(123)は、前記第3のpn接合部(pn3)を形成し、前記アバランシェ調整ゾーン(123)の平均ドーパント濃度は、前記ドリフトゾーン(121)の平均ドーパント濃度の少なくとも2倍である、
請求項1から7のいずれか記載の半導体デバイス。 - メサコンタクト構造(317)は、前記第1の表面(101)から前記トランジスタメサ部(170)内へ延在し、かつ、前記ソースゾーン(110)および前記ボディゾーン(115)と直接的に隣接している、
請求項1から8のいずれか記載の半導体デバイス。 - さらに、ボディコンタクトゾーン(115x)を有しており、前記ボディコンタクトゾーン(115x)は、前記第1の表面(101)から前記トランジスタメサ部(170)内へ延在し、かつ、前記ボディゾーン(115)と単極性のホモ接合部を形成する、
請求項1から8のいずれか記載の半導体デバイス。 - さらに、前記コンタクト構造(315)と前記ドリフト構造(120)との間に形成されたショットキーダイオード(SD)を有している、
請求項1から10のいずれか記載の半導体デバイス。 - さらに、チャネルダイオード(CD)を有しており、前記チャネルダイオード(CD)は、前記コンタクト構造(315)によって形成された第1の電極と、前記ドリフト構造(120)によって形成された第2の電極と、を有しており、
前記チャネルダイオード(CD)は、チャネル領域(125)を含んでおり、
前記チャネル領域(125)は、前記コンタクト構造(315)、前記ドリフト構造(120)、および、前記ダイオード領域(116)に直接的に隣接しており、かつ、前記ドリフト構造(120)と前記ダイオード領域(116)との間に電位が印加されていない場合に、完全に空乏化されるように構成されている、
請求項1から10のいずれか記載の半導体デバイス。 - 前記半導体ボディ(100)の材料は、炭化ケイ素である、
請求項1から12のいずれか記載の半導体デバイス。 - 前記半導体ボディ(100)の材料は、六方晶格子を有している、
請求項1から13のいずれか記載の半導体デバイス。 - 前記トランジスタメサ部の側壁は、前記六方晶格子の主結晶面である、
請求項14記載の半導体デバイス。 - 前記トランジスタメサ部の側壁は、{11−20}または{1−100}結晶面である、
請求項14記載の半導体デバイス。 - 前記ゲート構造(150)は、ゲート電極(155)と、前記ゲート電極(155)および少なくとも前記ボディゾーン(115)によって挟まれているゲート誘電体(151)と、前記ゲート電極(155)および前記コンタクト構造(315)によって挟まれているゲート絶縁体(159)と、を含んでいる、
請求項1から16のいずれか記載の半導体デバイス。 - 前記ドリフト構造(120)の部分は、前記第1の表面(101)に対して平行している面において、隣り合っているダイオード領域(116)を隔てている、
請求項1から17のいずれか記載の半導体デバイス。 - 1つまたは複数のトレンチ構造(350)と、複数のトランジスタメサ部(170)と、1つまたは複数のダイオード領域(116)と、を有する半導体デバイスであって、
前記トレンチ構造(350)はそれぞれ、第1の表面(101)から半導体ボディ(100)内へ延在し、かつ、ゲート構造(150)と、前記ゲート構造(150)を通って延在するコンタクト構造(315)と、を含んでおり、
前記トランジスタメサ部(170)は、前記複数のトレンチ構造(350)の間に設けられており、各トランジスタメサ部(170)は、ボディゾーン(115)を含んでおり、前記ボディゾーン(115)は、ドリフト構造(120)とともに第1のpn接合部(pn1)を形成し、かつ、ソースゾーン(110)とともに第2のpn接合部(pn2)を形成し、
1つまたは複数のダイオード領域(116)はそれぞれ、前記ドリフト構造(120)とともに第3のpn接合部(pn3)を形成し、かつ、前記複数のコンタクト構造(315)のうちの1つと直接的に隣接し、
隣り合っているトランジスタメサ部(170)間の全ての直接的な接続線は、前記コンタクト構造(315)の1つと交差し、
前記ドリフト構造(120)は、ドリフトゾーン(121)と電流拡散ゾーン(122)とを含んでおり、
前記電流拡散ゾーン(122)は、前記第2のpn接合部(pn2)を形成し、前記電流拡散ゾーン(122)における平均ドーパント濃度は、前記ドリフトゾーン(121)における平均ドーパント濃度の少なくとも2倍である、
ことを特徴とする半導体デバイス。 - 複数のトレンチ構造(350)と複数のトランジスタメサ部(170)と複数のダイオード領域(116)とを有する半導体デバイスであって、
前記トレンチ構造(350)はそれぞれ、第1の表面(101)から半導体ボディ(100)内へ延在し、かつ、ゲート構造(150)と、前記ゲート構造(150)を通って延在するコンタクト構造(315)と、を含んでおり、
前記トランジスタメサ部(170)は、前記複数のトレンチ構造(350)の間に設けられており、各トランジスタメサ部(170)は、ボディゾーン(115)を含んでおり、前記ボディゾーン(115)は、ドリフト構造(120)とともに第1のpn接合部(pn1)を形成し、かつ、ソースゾーン(110)とともに第2のpn接合部(pn2)を形成し、
前記ダイオード領域(116)はそれぞれ、直接的に、前記複数のコンタクト構造(315)のうちの1つと隣接し、かつ、前記ドリフト構造(120)とともに第3のpn接合部(pn3)を形成し、
前記トランジスタメサ部(170)の側壁は、{11−20}または{1−100}結晶面である、
ことを特徴とする半導体デバイス。 - 半導体デバイスの製造方法であって、
前記製造方法は、
複数のトレンチ(350a)を形成することと、複数のゲート部分(150x、150y)を形成することと、複数のコンタクト構造(315)を形成することと、を含んでおり、
前記トレンチ(350a)は、表側から半導体基板(500a)内へ延在し、各トレンチ(350a)は、前記半導体基板(500a)内に形成されたダイオード領域(116)まで延在し、前記複数のトレンチ(350a)の間に設けられているトランジスタメサ部(170)において、ボディゾーン(115)は、ドリフト構造(120)とともに第1のpn接合部(pn1)を形成し、ソースゾーン(110)とともに第2のpn接合部(pn2)を形成し、前記トランジスタメサ部(170)の側壁は{11−20}または{1−100}結晶面であり、
前記ゲート部分(150x、150y)はそれぞれ、前記トレンチ(350a)の、向かい合っている側壁に沿って延在しており、
前記コンタクト構造(315)を前記複数のゲート部分(150x、150y)の間のトレンチ(350a)内に形成し、前記コンタクト構造(315)は、直接的に前記ダイオード領域(116)と隣接している、
ことを特徴とする半導体デバイスの製造方法。 - 前記ゲート部分(150x、150y)を形成することは、前記トレンチ(350a)に内張りされる相似するゲートコンダクタ層(155a)を堆積することと、前記トレンチ(350a)の側壁に沿って、スペーサー状のゲート電極部分を形成するために、相似する前記ゲートコンダクタ層(155a)の水平方向部分を異方性エッチングによって除去することを含んでいる、
請求項21記載の方法。
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CN114937692A (zh) * | 2022-07-25 | 2022-08-23 | 深圳市威兆半导体股份有限公司 | 一种具有沟道二极管的阶梯沟槽栅SiC MOSFET结构及其制备方法 |
CN114937692B (zh) * | 2022-07-25 | 2022-10-28 | 深圳市威兆半导体股份有限公司 | 一种具有沟道二极管的阶梯沟槽栅SiC MOSFET结构及其制备方法 |
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DE102015103072B4 (de) | 2021-08-12 |
US20180350968A1 (en) | 2018-12-06 |
US10074741B2 (en) | 2018-09-11 |
DE102015103072A1 (de) | 2016-09-08 |
US20160260829A1 (en) | 2016-09-08 |
US10734514B2 (en) | 2020-08-04 |
JP6861674B2 (ja) | 2021-04-21 |
JP2018186305A (ja) | 2018-11-22 |
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