CN109742135B - 一种碳化硅mosfet器件及其制备方法 - Google Patents
一种碳化硅mosfet器件及其制备方法 Download PDFInfo
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- CN109742135B CN109742135B CN201811466155.9A CN201811466155A CN109742135B CN 109742135 B CN109742135 B CN 109742135B CN 201811466155 A CN201811466155 A CN 201811466155A CN 109742135 B CN109742135 B CN 109742135B
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 63
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 230000005669 field effect Effects 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 15
- 239000004065 semiconductor Substances 0.000 description 30
- 239000010410 layer Substances 0.000 description 9
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000002441 reversible effect Effects 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Families Citing this family (5)
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CN113054016B (zh) * | 2019-12-26 | 2023-04-07 | 株洲中车时代半导体有限公司 | 一种碳化硅mosfet器件的元胞结构及功率半导体器件 |
CN111146292B (zh) * | 2020-01-17 | 2021-05-14 | 电子科技大学 | 一种具有集成续流二极管的纵向GaN MOS |
CN111293176B (zh) * | 2020-02-25 | 2021-04-20 | 电子科技大学 | 一种GaN纵向逆导结场效应管 |
CN111341850A (zh) * | 2020-03-16 | 2020-06-26 | 电子科技大学 | 一种GaN纵向逆导结场效应管 |
CN115020479B (zh) * | 2022-08-10 | 2022-11-11 | 深圳平创半导体有限公司 | 一种耗尽型碳化硅双极器件结构及制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103180958A (zh) * | 2010-10-21 | 2013-06-26 | 威世通用半导体公司 | 用于高压应用的具有改善终端结构的沟槽dmos器件 |
CN106784008A (zh) * | 2017-01-22 | 2017-05-31 | 北京世纪金光半导体有限公司 | 一种集成肖特基二极管的SiC MOSFET器件 |
CN107580725A (zh) * | 2015-02-11 | 2018-01-12 | 莫诺利斯半导体有限公司 | 高压半导体器件及其制造方法 |
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US6621107B2 (en) * | 2001-08-23 | 2003-09-16 | General Semiconductor, Inc. | Trench DMOS transistor with embedded trench schottky rectifier |
DE102015103072B4 (de) * | 2015-03-03 | 2021-08-12 | Infineon Technologies Ag | Halbleitervorrichtung mit grabenstruktur einschliesslich einer gateelektrode und einer kontaktstruktur fur ein diodengebiet |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103180958A (zh) * | 2010-10-21 | 2013-06-26 | 威世通用半导体公司 | 用于高压应用的具有改善终端结构的沟槽dmos器件 |
CN107580725A (zh) * | 2015-02-11 | 2018-01-12 | 莫诺利斯半导体有限公司 | 高压半导体器件及其制造方法 |
CN106784008A (zh) * | 2017-01-22 | 2017-05-31 | 北京世纪金光半导体有限公司 | 一种集成肖特基二极管的SiC MOSFET器件 |
Non-Patent Citations (1)
Title |
---|
SiC MOSFET with Built-in SBD for Reduction of Reverse Recovery Charge and Switching Loss in 10-kv Applications;Huaping Jiang等;《29th International Symposium on Power Semiconductor Devices and IC’s》;20170724;49-52 * |
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Application publication date: 20190510 Assignee: Zhuhai Quanrun Technology Co.,Ltd. Assignor: PEKING University SHENZHEN GRADUATE SCHOOL Contract record no.: X2024980003078 Denomination of invention: A silicon carbide MOSFET device and its preparation method Granted publication date: 20220520 License type: Common License Record date: 20240320 |
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Application publication date: 20190510 Assignee: Shenzhen kunlian Technology Co.,Ltd. Assignor: PEKING University SHENZHEN GRADUATE SCHOOL Contract record no.: X2024980007508 Denomination of invention: A silicon carbide MOSFET device and its preparation method Granted publication date: 20220520 License type: Common License Record date: 20240619 |
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