CN113644129B - 一种具有台阶式P型GaN漏极结构的逆阻型HEMT - Google Patents
一种具有台阶式P型GaN漏极结构的逆阻型HEMT Download PDFInfo
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Abstract
本发明涉及功率半导体技术，特别涉及一种具有台阶式P型GaN漏极结构的逆阻型HEMT。本发明中漏极区域P型GaN层呈台阶状，沿漏极向源级方向呈台阶式减薄。在台阶式P型GaN漏极结构中，各个P型GaN台阶沿漏极到源级方向呈台阶式依次减薄，在正向导通时，较薄的台阶处正向开启电压较小，使得器件开启电压减小。当器件处于反向阻断状态时，通过台阶式P型GaN漏极结构对沟道电场的调制，优化了反向阻断时漏极区域沟道电场分布，提升了器件逆向阻断电压。本发明的有益成果：对比传统的肖特基势垒漏极逆阻型HEMT器件，器件的逆向阻断电压提升，反向耐压时漏极区域沟道电场分布得到优化。
Description
技术领域
本发明属于功率半导体技术领域，涉及一种具有台阶式P型GaN漏极结构的逆阻型HEMT(High electron mobility transistor，高电子迁移率晶体管)。
背景技术
随着当代社会与科技的发展，人们对于电能的利用与管理有了更高的要求。在电能转换方面，功率半导体技术有着十分重要的地位。如今，功率半导体技术与人们的生活日常息息相关，极大地提高了人们的生活质量与水平。而功率半导体器件是功率半导体技术的基础，是功率变换系统的核心器件，也是当下的研究热点。作为第三代宽禁带半导体材料，氮化镓(GaN)材料具有击穿电场强度高、介电常数小、电子迁移率高、饱和电子漂移速率高、热导率大、抗辐射能力强等优点，是近年来半导体研究领域的热点。同时，由于氮化镓优良的材料特性，使得氮化镓器件在高频、高温以及高压情况下表现优异，氮化镓器件在近几年来得到飞速的发展，有望解决目前功率半导体技术发展所面临的“硅极限”问题。
逆阻型HEMT是一种在器件开启与关断时具有反向阻断能力的HEMT。在一些功率器件的应用领域中，增强型功率器件需要同时具备正向阻断和反向阻断能力。常见的传统逆阻型HEMT器件中，采用肖特基金属作为漏极金属来实现器件的反向阻断能力，这种器件被称为肖特基势垒漏极逆阻型HEMT器件，其结构如图1所示。肖特基金属漏极结构简单，且在正向导通时有较小的开启电压，但是在反向耐压时，漏极肖特基金属下方的电场分布不均，会在漏极区域边缘处形成高电场峰，不利于器件反向阻断电压的提升。
发明内容
本发明的目的，就是针对上述问题，提出一种具有台阶式P型GaN漏极结构的逆阻型HEMT，通过改变漏极处台阶式P型GaN材料层中的台阶长度与厚度，调制反向耐压时漏极区域沟道电场分布，提高器件的反向击穿电压。由于在台阶式P型GaN漏极结构中，各个P型GaN台阶高度依次减小，在正向导通时，高度较低的台阶处正向开启电压较小，使得器件开启电压减小。
本发明的技术方案为：一种具有台阶式P型GaN漏极结构的逆阻型HEMT器件，包括由下到上依次层叠设置的衬底层1、AlGaN缓冲层2、GaN层3、AlGaN势垒层4，其中GaN层3与AlGaN势垒层4形成异质结结构；从AlGaN势垒层4上表面的一端到另一端依次具有源极金属8、栅极P型GaN材料层7、漏极金属5；在源极金属8和栅极P型GaN材料层7之间的AlGaN势垒层4上表面、以及栅极P型GaN材料层7和漏极金属5之间的AlGaN势垒层4上表面具有钝化层10；栅极P型GaN材料层7上表面具有栅极金属9；其特征在于，在栅极P型GaN材料层7和漏极金属5之间的钝化层10上表面具有P型GaN材料层6，P型GaN材料层6与漏极金属5接触，且P型GaN材料层6呈台阶型，从漏极到源极方向台阶垂直高度递减，漏极金属5向源极金属8的方向延伸覆盖住P型GaN材料层6上表面。
进一步的，如图2所示，其中台阶式P型GaN材料层6由三个不同高度台阶：第一台阶61、第二台阶62和第三台阶63组成，台阶式P型GaN材料层沿漏极到源极方向呈台阶式依次减薄，即第一台阶61厚度大于第二台阶62厚度，且第二台阶62厚度大于第三台阶63厚度。
进一步的，所述衬底1可采用硅，碳化硅或蓝宝石；所述钝化层10可采用材料氮化硅或二氧化硅。且在漏极台阶式P型GaN结构中，台阶的个数应根据器件中栅极与漏极的距离而定，且台阶个数应大于或等于两个。
本发明的有益效果为，对比传统的肖特基势垒漏极逆阻型HEMT器件，该发明使得器件在反向耐压时漏极区域边缘产生的高电场峰被削弱，使漏极区域沟道电场分布更均匀，提高了器件的反向击穿电压。
附图说明
图1为现有的，一种具有肖特基势垒漏极结构的逆阻型HEMT的结构示意图；
图2是本发明提出的，一种具有台阶式P型GaN漏极结构的逆阻型HEMT的结构示意图。图2中台阶式P型GaN材料层6由三个不同高度台阶：第一台阶61、第二台阶62和第三台阶63组成，台阶式P型GaN材料层沿漏极到源极方向呈台阶式依次减薄，即第一台阶61厚度大于第二台阶62厚度，且第二台阶62厚度大于第三台阶63厚度；
图3是本发明提出的，一种具有台阶式P型GaN漏极结构的逆阻型HEMT的3D结构示意图。图3中台阶式P型GaN材料层6中共有三个台阶，在实际应用中，台阶个数应根据器件中栅极与漏极的距离而定，且台阶个数应大于或等于两个；
图4-图9为本发明提出的，一种具有台阶式P型GaN漏极结构的逆阻型HEMT的制备流程示意图；
图10为本发明提出的，一种具有台阶式P型GaN漏极结构的逆阻型HEMT和现有的具有肖特基势垒漏极结构的逆阻型HEMT的正反向阻断特性对比图；
图11为本发明提出的，一种具有台阶式P型GaN漏极结构的逆阻型HEMT和现有的具有肖特基势垒漏极结构的逆阻型HEMT在漏极电压为-400V时，漏极区域沟道电场分布对比图。
具体实施方式
下面结合附图对本发明的方案进行详细的描述。
如图2所示，该器件结构包括由下到上的衬底层1，AlGaN缓冲层2，GaN层3，AlGaN势垒层4，其中GaN层与AlGaN势垒层形成异质结结构；在AlGaN势垒层一端有源极金属8与栅极P型GaN材料层7；P型GaN材料层7与栅极金属9相连，实现增强型器件；AlGaN势垒层上方由钝化层10覆盖；在AlGaN势垒层一端有台阶式P型GaN材料层6与漏极金属5相连，形成台阶式P型GaN漏极结构，台阶式P型GaN材料层6沿漏极到源极方向呈台阶式依次减薄。
下面说明本发明的台阶式P型GaN漏极结构的逆阻型HEMT的工作原理。
如图2所示，为本发明的具有台阶式P型GaN漏极结构的逆阻型HEMT。其工作原理如下：
当器件处于反向阻断状态时，漏极台阶式P型GaN材料层与AlGaN势垒层形成的pn结处于反偏状态，随着漏极台阶式P型GaN材料层中台阶的增厚，漏极区域下方耗尽区长度增加，沟道电场出现了两个电场峰值，优化了漏极区域下方电场分布，提升了器件的反向击穿电压。通过Sentaurus TCAD对上述一种具有台阶式P型GaN漏极结构的逆阻型HEMT与传统肖特基势垒漏极结构的逆阻型HEMT进行了仿真，得到图10、图11。图10为本发明一种具有台阶式P型GaN漏极结构的逆阻型HEMT和传统肖特基势垒漏极结构的逆阻型HEMT的正反向阻断特性对比图。如图10所示，两种器件的正向击穿电压相等，皆为1780V，相对比于传统的肖特基漏极结构反向击穿电压只有1716V,本发明的反向击穿电压高达2111V，器件的反向击穿电压得到明显的提高。图11为本发明一种具有台阶式P型GaN漏极结构的逆阻型HEMT和传统肖特基势垒漏极结构的逆阻型HEMT在漏极电压为-400V时，漏极区域沟道电场分布对比图。如图11所示，本发明中具有台阶式P型GaN漏极结构的逆阻型HEMT在反向阻断时，沟道电场出现了两个电场峰值，且相对比于传统肖特基势垒漏极结构的逆阻型HEMT，漏极边缘处电场变弱。
本发明结构可以用以下方法制备得到，工艺步骤为：
1、在衬底1上依次外延生长AlGaN缓冲层2，GaN层3，AlGaN势垒层4，P型GaN层11,并通过离子注入形成高阻区12或通过台面刻蚀实现导电通道的阻断，如图4所示。
2、对栅极以外的P型GaN材料层刻蚀，直至剩余P型GaN层高度与第一台阶61高度相等，如图5所示。
3、对栅极和第一台阶61以外的P型GaN材料层刻蚀，直至剩余P型GaN层高度与第二台阶62高度相等，如图6所示。
4、对栅极、第一台阶61和第二台阶62以外的P型GaN材料层刻蚀，直至剩余P型GaN层高度与第三台阶63高度相等，如图7所示。
5、对栅极、第一台阶61、第二台阶62和第三台阶63以外的P型GaN材料层刻蚀，直至剩余P型GaN层完全刻蚀，形成栅极P型GaN材料层7和台阶式P型GaN材料层6，如图8所示。台阶式P型GaN材料层6由第一台阶61，第二台阶62和第三台阶63组成。
6、如图9所示，在源极区域淀积金属，与半导体材料形成欧姆接触，形成源电极8；在栅极区域与漏极区域淀积金属，与半导体材料形成肖特基接触，形成栅电极9和漏电极5；在器件表面淀积形成钝化层10。
Claims (2)
1.一种具有台阶式P型GaN漏极结构的逆阻型HEMT器件，包括由下到上依次层叠设置的衬底层(1)、AlGaN缓冲层(2)、GaN层(3)、AlGaN势垒层(4)，其中GaN层(3)与AlGaN势垒层(4)形成异质结结构；从AlGaN势垒层(4)上表面的一端到另一端依次具有源极金属(8)、栅极P型GaN材料层(7)、漏极金属(5)；在源极金属(8)和栅极P型GaN材料层(7)之间的AlGaN势垒层(4)上表面、以及栅极P型GaN材料层(7)和漏极金属(5)之间的AlGaN势垒层(4)上表面具有钝化层(10)；栅极P型GaN材料层(7)上表面具有栅极金属(9)；其特征在于，在栅极P型GaN材料层(7)和漏极金属(5)之间的AlGaN势垒层(4)上表面具有P型GaN材料层(6)，且P型GaN材料层(6)的一端与漏极金属(5)接触，另一端与栅极P型GaN材料层(7)之间为钝化层(10)，且P型GaN材料层(6)呈台阶型，从漏极到源极方向台阶垂直高度递减，漏极金属(5)向源极金属(8)的方向延伸覆盖住P型GaN材料层(6)上表面。
2.根据权利要求1所述一种具有台阶式P型GaN漏极结构的逆阻型HEMT器件，衬底(1)采用的材料为硅、碳化硅或蓝宝石中的一种；所述钝化层(10)采用的材料为氮化硅或二氧化硅。
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