CN109742135A - 一种碳化硅mosfet器件及其制备方法 - Google Patents
一种碳化硅mosfet器件及其制备方法 Download PDFInfo
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- CN109742135A CN109742135A CN201811466155.9A CN201811466155A CN109742135A CN 109742135 A CN109742135 A CN 109742135A CN 201811466155 A CN201811466155 A CN 201811466155A CN 109742135 A CN109742135 A CN 109742135A
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 60
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000003763 carbonization Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 18
- 238000005516 engineering process Methods 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 description 30
- 238000005240 physical vapour deposition Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001603 reducing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
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CN201811466155.9A CN109742135B (zh) | 2018-12-03 | 2018-12-03 | 一种碳化硅mosfet器件及其制备方法 |
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CN201811466155.9A CN109742135B (zh) | 2018-12-03 | 2018-12-03 | 一种碳化硅mosfet器件及其制备方法 |
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CN109742135A true CN109742135A (zh) | 2019-05-10 |
CN109742135B CN109742135B (zh) | 2022-05-20 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111146292A (zh) * | 2020-01-17 | 2020-05-12 | 电子科技大学 | 一种具有集成续流二极管的纵向GaN MOS |
CN111293176A (zh) * | 2020-02-25 | 2020-06-16 | 电子科技大学 | 一种GaN纵向逆导结场效应管 |
CN111341850A (zh) * | 2020-03-16 | 2020-06-26 | 电子科技大学 | 一种GaN纵向逆导结场效应管 |
WO2021128748A1 (zh) * | 2019-12-26 | 2021-07-01 | 株洲中车时代半导体有限公司 | 一种碳化硅mosfet器件的元胞结构及功率半导体器件 |
CN115020479A (zh) * | 2022-08-10 | 2022-09-06 | 深圳平创半导体有限公司 | 一种耗尽型碳化硅双极器件结构及制作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030040144A1 (en) * | 2001-08-23 | 2003-02-27 | Blanchard Richard A. | Trench DMOS transistor with embedded trench schottky rectifier |
CN103180958A (zh) * | 2010-10-21 | 2013-06-26 | 威世通用半导体公司 | 用于高压应用的具有改善终端结构的沟槽dmos器件 |
US20160260829A1 (en) * | 2015-03-03 | 2016-09-08 | Infineon Technologies Ag | Semiconductor Device with Trench Gate Structure Including a Gate Electrode and a Contact Structure for a Diode Region |
CN106784008A (zh) * | 2017-01-22 | 2017-05-31 | 北京世纪金光半导体有限公司 | 一种集成肖特基二极管的SiC MOSFET器件 |
CN107580725A (zh) * | 2015-02-11 | 2018-01-12 | 莫诺利斯半导体有限公司 | 高压半导体器件及其制造方法 |
-
2018
- 2018-12-03 CN CN201811466155.9A patent/CN109742135B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030040144A1 (en) * | 2001-08-23 | 2003-02-27 | Blanchard Richard A. | Trench DMOS transistor with embedded trench schottky rectifier |
CN103180958A (zh) * | 2010-10-21 | 2013-06-26 | 威世通用半导体公司 | 用于高压应用的具有改善终端结构的沟槽dmos器件 |
CN107580725A (zh) * | 2015-02-11 | 2018-01-12 | 莫诺利斯半导体有限公司 | 高压半导体器件及其制造方法 |
US20160260829A1 (en) * | 2015-03-03 | 2016-09-08 | Infineon Technologies Ag | Semiconductor Device with Trench Gate Structure Including a Gate Electrode and a Contact Structure for a Diode Region |
CN106784008A (zh) * | 2017-01-22 | 2017-05-31 | 北京世纪金光半导体有限公司 | 一种集成肖特基二极管的SiC MOSFET器件 |
Non-Patent Citations (1)
Title |
---|
HUAPING JIANG等: "SiC MOSFET with Built-in SBD for Reduction of Reverse Recovery Charge and Switching Loss in 10-kv Applications", 《29TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC’S》 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021128748A1 (zh) * | 2019-12-26 | 2021-07-01 | 株洲中车时代半导体有限公司 | 一种碳化硅mosfet器件的元胞结构及功率半导体器件 |
CN111146292A (zh) * | 2020-01-17 | 2020-05-12 | 电子科技大学 | 一种具有集成续流二极管的纵向GaN MOS |
CN111293176A (zh) * | 2020-02-25 | 2020-06-16 | 电子科技大学 | 一种GaN纵向逆导结场效应管 |
CN111293176B (zh) * | 2020-02-25 | 2021-04-20 | 电子科技大学 | 一种GaN纵向逆导结场效应管 |
CN111341850A (zh) * | 2020-03-16 | 2020-06-26 | 电子科技大学 | 一种GaN纵向逆导结场效应管 |
CN115020479A (zh) * | 2022-08-10 | 2022-09-06 | 深圳平创半导体有限公司 | 一种耗尽型碳化硅双极器件结构及制作方法 |
CN115020479B (zh) * | 2022-08-10 | 2022-11-11 | 深圳平创半导体有限公司 | 一种耗尽型碳化硅双极器件结构及制作方法 |
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Application publication date: 20190510 Assignee: Zhuhai Quanrun Technology Co.,Ltd. Assignor: PEKING University SHENZHEN GRADUATE SCHOOL Contract record no.: X2024980003078 Denomination of invention: A silicon carbide MOSFET device and its preparation method Granted publication date: 20220520 License type: Common License Record date: 20240320 |
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Application publication date: 20190510 Assignee: Shenzhen kunlian Technology Co.,Ltd. Assignor: PEKING University SHENZHEN GRADUATE SCHOOL Contract record no.: X2024980007508 Denomination of invention: A silicon carbide MOSFET device and its preparation method Granted publication date: 20220520 License type: Common License Record date: 20240619 |