JP6505625B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP6505625B2 JP6505625B2 JP2016053102A JP2016053102A JP6505625B2 JP 6505625 B2 JP6505625 B2 JP 6505625B2 JP 2016053102 A JP2016053102 A JP 2016053102A JP 2016053102 A JP2016053102 A JP 2016053102A JP 6505625 B2 JP6505625 B2 JP 6505625B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- electrode
- semiconductor
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 165
- 239000012535 impurity Substances 0.000 claims description 138
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 35
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 31
- 238000005421 electrostatic potential Methods 0.000 description 11
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 230000020169 heat generation Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本実施形態の半導体装置は、第1の電極と、第2の電極と、少なくとも一部が第1の電極と第2の電極との間に設けられた半導体層と、半導体層内に設けられ、第1の電極と接する第1導電型の第1の半導体領域と、半導体層内の第1の電極と第1の半導体領域との間に設けられ、第1の電極と接する第2導電型の第2の半導体領域と、半導体層内の第1の電極と第2の半導体領域との間に設けられ、第1の電極と接し、第2の半導体領域の第2導電型の不純物濃度より第2導電型の不純物濃度の高い第2導電型の第3の半導体領域と、半導体層内の第1の電極と第1の半導体領域との間に設けられ、第1の電極と接し、第2の半導体領域の幅よりも幅が狭く、第1の電極と第1の半導体領域との第1の接触面からの第2の半導体領域の深さよりも第1の接触面からの深さが浅く、第3の半導体領域の第2導電型の不純物濃度より第2導電型の不純物濃度の低い第2導電型の第4の半導体領域と、を備える。
d1≧−5E−34D2+1E−16D+0.074・・・(式)
d1=−5E−34D2+1E−16D+0.074・・・(式)
d1≧−5E−34D2+1E−16D+0.074・・・(式)
d1=−1E−33D2+2E−16D+0.3484・・・(式)
d1≧−1E−33D2+2E−16D+0.3484・・・(式)
本実施形態の半導体装置は、第2の半導体領域の第2の領域の幅が第1の領域の幅よりも広い点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については、記述を省略する。
本実施形態の半導体装置は、第1の電極と第3の半導体領域との第2の接触面から第2の電極までの距離が、第1の接触面と第2の電極までの距離よりも短い点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については、記述を省略する。
本実施形態の半導体装置は、第1の電極と接する部分の第2の半導体領域の第1の接触面からの深さが、第3の半導体領域と第1の半導体領域に挟まれる部分の第2の半導体領域の第1の接触面からの深さよりも深い点で、第1の実施形態と異なっている。以下、第1の実施形態と重複する内容については、記述を省略する。
本実施形態の半導体装置は、第1の電極と、第2の電極と、少なくとも一部が第1の電極と第2の電極との間に設けられた半導体層と、半導体層内に設けられ、第1の電極と接する第1導電型の第1の半導体領域と、半導体層内の第1の電極と第1の半導体領域との間に設けられ、第1の電極と接し、第1の電極と第1の半導体領域との第1の接触面からの深さをd1(μm)、第1の半導体領域の第1導電型の不純物濃度をD(cm−3)とした場合に下記式が充足される第2導電型の第2の半導体領域と、半導体層内の第1の電極と第2の半導体領域との間に設けられ、第1の電極と接し、第2の半導体領域の第2導電型の不純物濃度より第2導電型の不純物濃度の高い第2導電型の第3の半導体領域と、半導体層内の第1の電極と第1の半導体領域との間に設けられ、第1の電極と接し、第2の半導体領域の幅よりも幅が狭く、第3の半導体領域の第2導電型の不純物濃度より第2導電型の不純物濃度の低い第2導電型の第4の半導体領域と、を備える。
d1≧−5E−34D2+1E−16D+0.074・・・(式)
d1≧−5E−34D2+1E−16D+0.074・・・(式)
本実施形態の半導体装置は、第4の半導体領域を備えない点以外は、第5の実施形態と同様である。したがって、第5の実施形態と重複する内容については、記述を省略する。
d1≧−5E−34D2+1E−16D+0.074・・・(式)
12 アノード電極(第1の電極)
14 カソード電極(第2の電極)
20 n−型のドリフト領域(第1の半導体領域)
22 p型の第1のアノード領域(第2の半導体領域)
22a 第1の領域
22b 第2の領域
24 p+型の第2のアノード領域(第3の半導体領域)
28 p型領域(第4の半導体領域)
100 MPS(半導体装置)
200 MPS(半導体装置)
300 MPS(半導体装置)
400 MPS(半導体装置)
500 MPS(半導体装置)
600 SBD(半導体装置)
CP1 第1の接触面
CP2 第2の接触面
Claims (8)
- 第1の電極と、
第2の電極と、
少なくとも一部が前記第1の電極と前記第2の電極との間に設けられた半導体層と、
前記半導体層内に設けられ、前記第1の電極と接する第1導電型の第1の半導体領域と、
前記半導体層内の前記第1の電極と前記第1の半導体領域との間に設けられ、前記第1の電極と接する第2導電型の第2の半導体領域と、
前記半導体層内の前記第1の電極と前記第2の半導体領域との間に設けられ、前記第1の電極と接し、前記第2の半導体領域の第2導電型の不純物濃度より第2導電型の不純物濃度の高い第2導電型の第3の半導体領域と、
前記半導体層内の前記第1の電極と前記第1の半導体領域との間に設けられ、前記第1の電極と接し、前記第2の半導体領域の幅よりも幅が狭く、前記第1の電極と前記第1の半導体領域との第1の接触面からの前記第2の半導体領域の深さよりも前記第1の接触面からの深さが浅く、前記第3の半導体領域の第2導電型の不純物濃度より第2導電型の不純物濃度の低い第2導電型の第4の半導体領域と、
を備え、
前記第2の半導体領域が、第1の領域と第2の領域を有し、前記第1の領域と前記第1の半導体領域との間に前記第2の領域が設けられ、前記第2の領域の幅が前記第1の領域の幅よりも広く、
隣り合う2つの前記第2の半導体領域の間に、少なくとも一つの前記第4の半導体領域が設けられた半導体装置。 - 前記第2の領域の第2導電型の不純物濃度が前記第1の領域の第2導電型の不純物濃度より低い請求項1記載の半導体装置。
- 前記第1の電極と前記第3の半導体領域との第2の接触面から前記第2の電極までの距離が、前記第1の接触面と前記第2の電極までの距離よりも短い請求項1又は請求項2記載の半導体装置。
- 前記第1の電極と接する部分の前記第2の半導体領域の前記第1の接触面からの深さが、前記第3の半導体領域と前記第1の半導体領域に挟まれる部分の前記第2の半導体領域の前記第1の接触面からの深さよりも深い請求項1乃至請求項3いずれか一項記載の半導体装置。
- 前記第3の半導体領域は前記第2の半導体領域に接する請求項1乃至請求項4いずれか一項記載の半導体装置。
- 前記第2の半導体領域の前記第1の接触面からの深さをd1(μm)、前記第1の半導体領域の第1導電型の不純物濃度をD(cm−3)とした場合に下記式が充足される請求項1乃至請求項5いずれか一項記載の半導体装置。
d1≧−5E−34D2+1E−16D+0.074・・・(式) - 前記第1の電極と前記第1の半導体領域との間のコンタクトは、ショットキーコンタクトである請求項1乃至請求項6いずれか一項記載の半導体装置。
- 前記半導体層は炭化珪素層である請求項1乃至請求項7いずれか一項記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016053102A JP6505625B2 (ja) | 2016-03-16 | 2016-03-16 | 半導体装置 |
US15/243,525 US10566464B2 (en) | 2016-03-16 | 2016-08-22 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016053102A JP6505625B2 (ja) | 2016-03-16 | 2016-03-16 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017168663A JP2017168663A (ja) | 2017-09-21 |
JP6505625B2 true JP6505625B2 (ja) | 2019-04-24 |
Family
ID=59847706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016053102A Active JP6505625B2 (ja) | 2016-03-16 | 2016-03-16 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10566464B2 (ja) |
JP (1) | JP6505625B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11502205B2 (en) | 2020-03-24 | 2022-11-15 | Kabushiki Kaisha Toshiba | Semiconductor device having Schottky barrier diode |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109473482A (zh) * | 2017-09-08 | 2019-03-15 | 创能动力科技有限公司 | 肖特基器件及其制造方法 |
DE102017121878A1 (de) * | 2017-09-21 | 2019-03-21 | Infineon Technologies Austria Ag | Leistungsdiode |
JP6827433B2 (ja) * | 2018-03-02 | 2021-02-10 | 株式会社東芝 | 半導体装置 |
JP6995725B2 (ja) * | 2018-09-19 | 2022-01-17 | 株式会社東芝 | 半導体装置 |
US11171248B2 (en) * | 2019-02-12 | 2021-11-09 | Semiconductor Components Industries, Llc | Schottky rectifier with surge-current ruggedness |
CN113728441A (zh) * | 2019-04-19 | 2021-11-30 | 罗姆股份有限公司 | SiC半导体装置 |
CN113228236B (zh) * | 2019-07-29 | 2024-08-09 | 富士电机株式会社 | 碳化硅半导体装置以及碳化硅半导体装置的制造方法 |
CN113299732A (zh) * | 2020-02-24 | 2021-08-24 | 珠海格力电器股份有限公司 | 半导体器件、芯片、设备和制造方法 |
CN112909098A (zh) * | 2021-02-24 | 2021-06-04 | 光华临港工程应用技术研发(上海)有限公司 | 一种肖特基二极管及其制备方法 |
JP2022140933A (ja) * | 2021-03-15 | 2022-09-29 | 株式会社東芝 | 半導体装置 |
EP4290579A1 (en) * | 2022-06-10 | 2023-12-13 | Nexperia B.V. | Semiconductor component and method of manufacturing thereof |
CN117747429A (zh) * | 2022-09-15 | 2024-03-22 | 无锡华润华晶微电子有限公司 | 一种jbs二极管结构及其制备方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3169604B2 (ja) | 1990-11-30 | 2001-05-28 | 株式会社日立製作所 | 半導体装置 |
JP3943749B2 (ja) * | 1999-02-26 | 2007-07-11 | 株式会社日立製作所 | ショットキーバリアダイオード |
JP4892787B2 (ja) * | 2001-04-09 | 2012-03-07 | 株式会社デンソー | ショットキーダイオード及びその製造方法 |
JP5101985B2 (ja) * | 2007-10-23 | 2012-12-19 | 株式会社日立製作所 | ジャンクションバリアショットキーダイオード |
JP5612256B2 (ja) * | 2008-10-16 | 2014-10-22 | 株式会社東芝 | 半導体装置 |
JP5428435B2 (ja) | 2009-03-24 | 2014-02-26 | 株式会社デンソー | ショットキーバリアダイオードを備えた半導体装置およびその製造方法 |
JP5175872B2 (ja) * | 2010-01-21 | 2013-04-03 | 株式会社東芝 | 半導体整流装置 |
JP2011233614A (ja) * | 2010-04-26 | 2011-11-17 | Mitsubishi Electric Corp | 炭化珪素半導体装置およびその製造方法 |
JP5550589B2 (ja) | 2011-03-23 | 2014-07-16 | 株式会社東芝 | 半導体装置 |
JP5881322B2 (ja) | 2011-04-06 | 2016-03-09 | ローム株式会社 | 半導体装置 |
JP2012227429A (ja) | 2011-04-21 | 2012-11-15 | Sanken Electric Co Ltd | 半導体装置 |
JP5981859B2 (ja) * | 2013-02-15 | 2016-08-31 | 株式会社豊田中央研究所 | ダイオード及びダイオードを内蔵する半導体装置 |
JP2014236120A (ja) * | 2013-06-03 | 2014-12-15 | トヨタ自動車株式会社 | 半導体装置及びその製造方法 |
CN104282732B (zh) | 2013-07-01 | 2017-06-27 | 株式会社东芝 | 半导体装置 |
JP2015032627A (ja) | 2013-07-31 | 2015-02-16 | 株式会社東芝 | 半導体装置 |
-
2016
- 2016-03-16 JP JP2016053102A patent/JP6505625B2/ja active Active
- 2016-08-22 US US15/243,525 patent/US10566464B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11502205B2 (en) | 2020-03-24 | 2022-11-15 | Kabushiki Kaisha Toshiba | Semiconductor device having Schottky barrier diode |
Also Published As
Publication number | Publication date |
---|---|
US10566464B2 (en) | 2020-02-18 |
JP2017168663A (ja) | 2017-09-21 |
US20170271528A1 (en) | 2017-09-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6505625B2 (ja) | 半導体装置 | |
US9577046B1 (en) | Semiconductor device | |
JP5787853B2 (ja) | 電力用半導体装置 | |
US9337268B2 (en) | SiC devices with high blocking voltage terminated by a negative bevel | |
JP5665912B2 (ja) | 半導体装置及びその製造方法 | |
JP6496992B2 (ja) | 半導体装置 | |
US9577117B2 (en) | Super-junction schottky oxide pin diode having thin P-type layers under the schottky contact | |
JP6995725B2 (ja) | 半導体装置 | |
JP7305591B2 (ja) | 半導体装置 | |
TW201635560A (zh) | 半導體裝置及其製造方法 | |
US20200321478A1 (en) | Trench junction barrier schottky diode with voltage reducing layer and manufacturing method thereof | |
US9224844B2 (en) | Semiconductor device | |
JP7030665B2 (ja) | 半導体装置 | |
JP6072349B2 (ja) | 半導体素子 | |
JP6460127B2 (ja) | 半導体装置 | |
JP6523886B2 (ja) | 半導体装置 | |
JP5377548B2 (ja) | 半導体整流装置 | |
JP2020047683A (ja) | 半導体装置 | |
JP5692947B1 (ja) | 半導体素子 | |
JP5476439B2 (ja) | ジャンクションバリアショットキーダイオード | |
US20160276441A1 (en) | Semiconductor device | |
JP2008227113A (ja) | 半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170912 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20170914 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20170915 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180712 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180724 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180925 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190226 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190327 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6505625 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |