JP6967238B2 - ショットキーバリアダイオード - Google Patents
ショットキーバリアダイオード Download PDFInfo
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- JP6967238B2 JP6967238B2 JP2017036995A JP2017036995A JP6967238B2 JP 6967238 B2 JP6967238 B2 JP 6967238B2 JP 2017036995 A JP2017036995 A JP 2017036995A JP 2017036995 A JP2017036995 A JP 2017036995A JP 6967238 B2 JP6967238 B2 JP 6967238B2
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- schottky barrier
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- 239000004065 semiconductor Substances 0.000 claims description 151
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 65
- 230000000630 rising effect Effects 0.000 claims description 50
- 239000013078 crystal Substances 0.000 claims description 38
- 229910052802 copper Inorganic materials 0.000 claims description 22
- 229910052742 iron Inorganic materials 0.000 claims description 22
- 239000010410 layer Substances 0.000 description 170
- 238000011282 treatment Methods 0.000 description 43
- 239000000463 material Substances 0.000 description 33
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 28
- 238000000137 annealing Methods 0.000 description 28
- 230000005684 electric field Effects 0.000 description 27
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 26
- 239000000758 substrate Substances 0.000 description 22
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 20
- 238000007740 vapor deposition Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 12
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 10
- 239000007788 liquid Substances 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 230000008859 change Effects 0.000 description 8
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- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910017604 nitric acid Inorganic materials 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 3
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- 229910052737 gold Inorganic materials 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- 239000002002 slurry Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Description
(ショットキーバリアダイオードの構成)
図1は、第1の実施の形態に係るショットキーバリアダイオード1の垂直断面図である。ショットキーバリアダイオード1は、縦型のショットキーバリアダイオードであり、半導体層10と、半導体層10の一方の面上に形成されたアノード電極11と、半導体層10の他方の面上に形成されたカソード電極12と、を有する。
以下に、ショットキーバリアダイオード1の製造方法の一例について説明する。
(トレンチMOS型ショットキーバリアダイオードの構成)
図2(a)は、第2の実施の形態に係るトレンチMOS型ショットキーバリアダイオード2の垂直断面図である。トレンチMOS型ショットキーバリアダイオード2は、トレンチMOS領域を有する縦型のショットキーバリアダイオードである。
以下に、トレンチMOS型ショットキーバリアダイオード2の製造方法の一例を示す。
上記第1、2の実施の形態によれば、ショットキー電極としてのアノード電極の材料にFe又はCuを用いることにより、Ga2O3系単結晶からなる半導体層を有するショットキーバリアダイオードにおいて、従来よりも低い立ち上がり電圧を得ることができる。
Claims (2)
- β型のGa2O3系単結晶からなるn型の第1の半導体層と、
前記第1の半導体層とショットキー接合を形成し、前記第1の半導体層と接触する部分がFe又はCuからなるアノード電極と、
カソード電極と、
を有し、
前記第1の半導体層のドナー濃度が1×10 17 cm −3 以下であり、
前記アノード電極の前記第1の半導体層と接触する部分がFeからなる場合に、立ち上がり電圧が0.4V以上かつ0.5V以下であり、
前記アノード電極の前記第1の半導体層と接触する部分がCuからなる場合に、立ち上がり電圧が0.6V以上かつ0.7V以下である、
ショットキーバリアダイオード。 - β型のGa 2 O 3 系単結晶からなるn型の第1の半導体層と、
前記第1の半導体層とショットキー接合を形成し、前記第1の半導体層と接触する部分がFe又はCuからなるアノード電極と、
カソード電極と、
前記第1の半導体層に積層された、β型のGa2O3系単結晶からなる第2の半導体層と、
を有し、
前記第1の半導体層が、前記第2の半導体層の反対側の面に開口するトレンチを有し、
前記トレンチの内面が絶縁膜に覆われ、
前記トレンチ内に前記絶縁膜に覆われるようにトレンチMOSバリアが埋め込まれ、
前記アノード電極が前記トレンチMOSバリアに接触し、
前記カソード電極が前記第2の半導体層に接続され、
前記第1の半導体層のドナー濃度が1×10 17 cm −3 以下であり、
前記アノード電極の前記第1の半導体層と接触する部分がFeからなる場合に、立ち上がり電圧が0.4V以上かつ0.7V以下であり、
前記アノード電極の前記第1の半導体層と接触する部分がCuからなる場合に、立ち上がり電圧が0.6V以上かつ0.9V以下である、
ショットキーバリアダイオード。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017036995A JP6967238B2 (ja) | 2017-02-28 | 2017-02-28 | ショットキーバリアダイオード |
US16/484,993 US11043602B2 (en) | 2017-02-28 | 2018-02-19 | Schottky barrier diode |
PCT/JP2018/005665 WO2018159350A1 (ja) | 2017-02-28 | 2018-02-19 | ショットキーバリアダイオード |
EP18761989.5A EP3591711B1 (en) | 2017-02-28 | 2018-02-19 | Schottky barrier diode |
CN201880013136.2A CN110326115B (zh) | 2017-02-28 | 2018-02-19 | 肖特基势垒二极管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017036995A JP6967238B2 (ja) | 2017-02-28 | 2017-02-28 | ショットキーバリアダイオード |
Publications (2)
Publication Number | Publication Date |
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JP2018142655A JP2018142655A (ja) | 2018-09-13 |
JP6967238B2 true JP6967238B2 (ja) | 2021-11-17 |
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---|---|
US (1) | US11043602B2 (ja) |
EP (1) | EP3591711B1 (ja) |
JP (1) | JP6967238B2 (ja) |
CN (1) | CN110326115B (ja) |
WO (1) | WO2018159350A1 (ja) |
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DE112018003362B4 (de) * | 2017-06-29 | 2023-08-10 | Mitsubishi Electric Corporation | Oxid-Halbleitereinheiten und Verfahren zur Herstellung von Oxid-Halbleitereinheiten |
EP3654387A4 (en) * | 2017-07-08 | 2021-03-31 | Flosfia Inc. | SEMICONDUCTOR DEVICE |
JP7012306B2 (ja) * | 2018-03-01 | 2022-01-28 | 株式会社タムラ製作所 | トレンチmos型ショットキーダイオード及びその製造方法 |
JP6966739B2 (ja) * | 2018-10-23 | 2021-11-17 | Tdk株式会社 | ショットキーバリアダイオード |
JP2020155530A (ja) * | 2019-03-19 | 2020-09-24 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
US11476340B2 (en) * | 2019-10-25 | 2022-10-18 | Ohio State Innovation Foundation | Dielectric heterojunction device |
EP3823045A1 (en) * | 2019-11-14 | 2021-05-19 | Flosfia Inc. | Semiconductor device and system including semiconductor |
JP2021082711A (ja) * | 2019-11-19 | 2021-05-27 | 株式会社デンソー | 半導体装置の製造方法 |
JP7415537B2 (ja) * | 2019-12-18 | 2024-01-17 | Tdk株式会社 | ショットキーバリアダイオード |
US11848389B2 (en) | 2020-03-19 | 2023-12-19 | Ohio State Innovation Foundation | Low turn on and high breakdown voltage lateral diode |
CN116435343B (zh) * | 2023-04-17 | 2024-02-09 | 西安电子科技大学 | 一种侧壁刻蚀修复的Mos-Type沟槽型功率器件及其制备方法 |
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DE102004056663A1 (de) * | 2004-11-24 | 2006-06-01 | Robert Bosch Gmbh | Halbleitereinrichtung und Gleichrichteranordnung |
JP2006352006A (ja) * | 2005-06-20 | 2006-12-28 | Sumitomo Electric Ind Ltd | 整流素子およびその製造方法 |
JP2007036052A (ja) * | 2005-07-28 | 2007-02-08 | Toshiba Corp | 半導体整流素子 |
JP2009017702A (ja) * | 2007-07-05 | 2009-01-22 | Toshiba Consumer Electronics Holdings Corp | 電力変換装置 |
JP2009177028A (ja) * | 2008-01-25 | 2009-08-06 | Toshiba Corp | 半導体装置 |
CN103781948B (zh) * | 2011-09-08 | 2017-11-17 | 株式会社田村制作所 | 晶体层叠结构体及其制造方法 |
WO2015025500A1 (ja) * | 2013-08-19 | 2015-02-26 | 出光興産株式会社 | 酸化物半導体基板及びショットキーバリアダイオード |
US9590050B2 (en) * | 2014-05-08 | 2017-03-07 | Flosfia, Inc. | Crystalline multilayer structure and semiconductor device |
US9379190B2 (en) * | 2014-05-08 | 2016-06-28 | Flosfia, Inc. | Crystalline multilayer structure and semiconductor device |
CN110828552B (zh) | 2014-07-22 | 2024-04-12 | 株式会社Flosfia | 结晶性半导体膜和板状体以及半导体装置 |
CN107068773B (zh) * | 2015-12-18 | 2021-06-01 | 株式会社Flosfia | 半导体装置 |
JP7116409B2 (ja) * | 2017-02-27 | 2022-08-10 | 株式会社タムラ製作所 | トレンチmos型ショットキーダイオード |
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2017
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2018
- 2018-02-19 US US16/484,993 patent/US11043602B2/en active Active
- 2018-02-19 EP EP18761989.5A patent/EP3591711B1/en active Active
- 2018-02-19 CN CN201880013136.2A patent/CN110326115B/zh active Active
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US11043602B2 (en) | 2021-06-22 |
EP3591711B1 (en) | 2022-08-31 |
EP3591711A4 (en) | 2020-12-09 |
JP2018142655A (ja) | 2018-09-13 |
US20190363197A1 (en) | 2019-11-28 |
WO2018159350A1 (ja) | 2018-09-07 |
CN110326115A (zh) | 2019-10-11 |
CN110326115B (zh) | 2022-09-09 |
EP3591711A1 (en) | 2020-01-08 |
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