JP5745073B2 - Ga2O3系単結晶体のドナー濃度制御方法 - Google Patents
Ga2O3系単結晶体のドナー濃度制御方法 Download PDFInfo
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- JP5745073B2 JP5745073B2 JP2013532499A JP2013532499A JP5745073B2 JP 5745073 B2 JP5745073 B2 JP 5745073B2 JP 2013532499 A JP2013532499 A JP 2013532499A JP 2013532499 A JP2013532499 A JP 2013532499A JP 5745073 B2 JP5745073 B2 JP 5745073B2
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- 239000013078 crystal Substances 0.000 title claims description 92
- 238000000034 method Methods 0.000 title claims description 42
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 title 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 83
- 239000012535 impurity Substances 0.000 claims description 36
- 238000005468 ion implantation Methods 0.000 claims description 32
- 238000000137 annealing Methods 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 238000002513 implantation Methods 0.000 claims description 14
- 229910021480 group 4 element Inorganic materials 0.000 claims description 11
- 239000012298 atmosphere Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/42—Bombardment with radiation
- H01L21/423—Bombardment with radiation with high-energy radiation
- H01L21/425—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
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- Condensed Matter Physics & Semiconductors (AREA)
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- Physical Vapour Deposition (AREA)
Description
本実施の形態によれば、イオン注入法を用いてドナー不純物をGa2O3系単結晶体に導入し、所定の条件下でアニール処理を施すことにより、優れた導電性を有する高ドナー濃度領域をGa2O3系単結晶体中に形成することができる。以下、その実施の形態の一例として、β−Ga2O3系単結晶体のドナー濃度制御方法について詳細に説明する。なお、本実施の形態のGa2O3系単結晶体はβ−Ga2O3系単結晶体に限られず、α−Ga2O3系単結晶体等の他の構造を有するGa2O3系単結晶体であってもよい。
×1017/cm3のβ−Ga2O3単結晶基板に、濃度1×1019/cm3のSi又はSnをイオン注入することにより形成した。また、この高ドナー濃度領域は、(010)面を主面とするβ−Ga2O3単結晶基板の主面に垂直にドナー不純物を注入することにより形成した。
本実施の形態によれば、イオン注入法を用いてドナー不純物をβ−Ga2O3系結晶体に導入し、所定の条件下でアニール処理を施すことにより、優れた導電性を有する高ドナー濃度領域をβ−Ga2O3系結晶体中に形成することができる。イオン注入法を用いて高ドナー濃度領域を形成するため、β−Ga2O3系結晶体の形成後に高ドナー濃度領域のドナー濃度を制御し、所望の導電性を付与することができる。また、マスク等を用いることにより、高ドナー濃度領域をβ−Ga2O3系結晶体中に局所的に形成することができる。
Claims (5)
- イオン注入法により、Ga2O3系単結晶体にドナー不純物としてIV族元素を導入し、前記Ga2O3系単結晶体中に、前記IV族元素を注入していない領域よりも前記IV族元素の濃度の高いドナー不純物注入領域を形成する工程と、
800℃以上のアニール処理により、前記ドナー不純物注入領域中の前記IV族元素を活性化させ、前記ドナー不純物注入領域を前記アニール処理前のドナー濃度より高いドナー濃度を有する高ドナー濃度領域を形成する工程と、
を含むGa2O3系単結晶体のドナー濃度制御方法。 - 前記アニール処理は、窒素雰囲気下で800℃以上の条件で実施される、
請求項1に記載のGa2O3系単結晶体のドナー濃度制御方法。 - 前記アニール処理は、酸素雰囲気下で800℃以上950℃以下の条件で実施される、
請求項1に記載のGa2O3系単結晶体のドナー濃度制御方法。 - 前記Ga2O3系単結晶体上に形成されたマスクを用いて、前記IV族元素を前記Ga2O3系単結晶体の表面の一部の領域に導入し、
前記Ga2O3系単結晶体の前記表面の一部の領域に前記ドナー不純物注入領域を形成する、
請求項1〜3のいずれか1項に記載のGa2O3系単結晶体のドナー濃度制御方法。 - 前記Ga2O3系単結晶体は、Ga2O3系単結晶基板、又は支持基板上に形成されたGa2O3系結晶膜である、
請求項1に記載のGa2O3系単結晶体のドナー濃度制御方法。
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JP2013532499A JP5745073B2 (ja) | 2011-09-08 | 2012-08-02 | Ga2O3系単結晶体のドナー濃度制御方法 |
PCT/JP2012/069710 WO2013035465A1 (ja) | 2011-09-08 | 2012-08-02 | Ga2O3系単結晶体のドナー濃度制御方法 |
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JP2015092979A Active JP6248060B2 (ja) | 2011-09-08 | 2015-04-30 | β−Ga2O3系単結晶体に局所的な導電性領域を形成する方法、及び局所的な導電性領域を備えたβ−Ga2O3系単結晶体 |
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EP (2) | EP2755231B1 (ja) |
JP (2) | JP5745073B2 (ja) |
CN (2) | CN106098756B (ja) |
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US8951897B2 (en) | 2011-09-08 | 2015-02-10 | Tamura Corporation | Method for controlling concentration of donor in GA2O3—based single crystal |
CN110010670A (zh) * | 2011-09-08 | 2019-07-12 | 株式会社田村制作所 | Ga2O3系MISFET和Ga2O3系MESFET |
JP6142357B2 (ja) | 2013-03-01 | 2017-06-07 | 株式会社タムラ製作所 | Ga2O3系単結晶体のドナー濃度制御方法、及びオーミックコンタクト形成方法 |
JP2016031953A (ja) | 2014-07-25 | 2016-03-07 | 株式会社タムラ製作所 | 半導体素子及びその製造方法、半導体基板、並びに結晶積層構造体 |
JP5828568B1 (ja) * | 2014-08-29 | 2015-12-09 | 株式会社タムラ製作所 | 半導体素子及びその製造方法 |
JP2017041593A (ja) * | 2015-08-21 | 2017-02-23 | 株式会社タムラ製作所 | Ga2O3系結晶膜の形成方法 |
CN106868593B (zh) * | 2017-01-06 | 2019-04-19 | 中国科学院上海光学精密机械研究所 | 高电导率的共掺杂氧化镓晶体及其制备方法 |
CN109671612B (zh) * | 2018-11-15 | 2020-07-03 | 中国科学院上海微系统与信息技术研究所 | 一种氧化镓半导体结构及其制备方法 |
JP2024050122A (ja) * | 2022-09-29 | 2024-04-10 | 株式会社ノベルクリスタルテクノロジー | 単結晶の育成方法、半導体基板の製造方法、及び半導体基板 |
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CN110010670A (zh) * | 2011-09-08 | 2019-07-12 | 株式会社田村制作所 | Ga2O3系MISFET和Ga2O3系MESFET |
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EP2755231A4 (en) | 2015-04-08 |
CN103782376B (zh) | 2016-08-17 |
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EP2755231B1 (en) | 2019-05-22 |
US20140220734A1 (en) | 2014-08-07 |
JPWO2013035465A1 (ja) | 2015-03-23 |
WO2013035465A1 (ja) | 2013-03-14 |
EP3493245A1 (en) | 2019-06-05 |
US8951897B2 (en) | 2015-02-10 |
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CN106098756A (zh) | 2016-11-09 |
US9202876B2 (en) | 2015-12-01 |
CN103782376A (zh) | 2014-05-07 |
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EP3493245B1 (en) | 2023-05-03 |
US20150115279A1 (en) | 2015-04-30 |
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