JP7248961B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7248961B2 JP7248961B2 JP2018156410A JP2018156410A JP7248961B2 JP 7248961 B2 JP7248961 B2 JP 7248961B2 JP 2018156410 A JP2018156410 A JP 2018156410A JP 2018156410 A JP2018156410 A JP 2018156410A JP 7248961 B2 JP7248961 B2 JP 7248961B2
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- Prior art keywords
- semiconductor layer
- type semiconductor
- semiconductor
- semiconductor device
- substrate
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- 239000004065 semiconductor Substances 0.000 title claims description 377
- 229910052751 metal Inorganic materials 0.000 claims description 71
- 239000002184 metal Substances 0.000 claims description 68
- 239000002019 doping agent Substances 0.000 claims description 34
- 230000000737 periodic effect Effects 0.000 claims description 32
- 230000004888 barrier function Effects 0.000 claims description 19
- 150000002739 metals Chemical class 0.000 claims description 19
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 18
- 229910052733 gallium Inorganic materials 0.000 claims description 18
- 229910052593 corundum Inorganic materials 0.000 claims description 17
- 230000015556 catabolic process Effects 0.000 claims description 16
- 239000010431 corundum Substances 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052738 indium Inorganic materials 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 108
- 238000000034 method Methods 0.000 description 34
- 239000000463 material Substances 0.000 description 27
- 239000012159 carrier gas Substances 0.000 description 25
- 239000000243 solution Substances 0.000 description 23
- 239000002994 raw material Substances 0.000 description 22
- 239000003595 mist Substances 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 19
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 18
- 239000013078 crystal Substances 0.000 description 16
- 229910052594 sapphire Inorganic materials 0.000 description 12
- 239000010980 sapphire Substances 0.000 description 12
- 239000010936 titanium Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
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- 238000004544 sputter deposition Methods 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 7
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 7
- 229910001195 gallium oxide Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 6
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- 239000010949 copper Substances 0.000 description 6
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- 239000011651 chromium Substances 0.000 description 5
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
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- 238000000137 annealing Methods 0.000 description 4
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- 229910000428 cobalt oxide Inorganic materials 0.000 description 4
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- 230000005684 electric field Effects 0.000 description 4
- SRVXDMYFQIODQI-UHFFFAOYSA-K gallium(iii) bromide Chemical compound Br[Ga](Br)Br SRVXDMYFQIODQI-UHFFFAOYSA-K 0.000 description 4
- -1 lanthanum strontium aluminum Chemical compound 0.000 description 4
- 229910052748 manganese Inorganic materials 0.000 description 4
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- 229910052758 niobium Inorganic materials 0.000 description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
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- 238000000059 patterning Methods 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
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- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
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- 239000011777 magnesium Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
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- ZVYYAYJIGYODSD-LNTINUHCSA-K (z)-4-bis[[(z)-4-oxopent-2-en-2-yl]oxy]gallanyloxypent-3-en-2-one Chemical compound [Ga+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O ZVYYAYJIGYODSD-LNTINUHCSA-K 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
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- 238000000576 coating method Methods 0.000 description 2
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- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
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- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001509 metal bromide Inorganic materials 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 229910001511 metal iodide Inorganic materials 0.000 description 1
- 229910001960 metal nitrate Inorganic materials 0.000 description 1
- 229910001463 metal phosphate Inorganic materials 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 125000002467 phosphate group Chemical class [H]OP(=O)(O[H])O[*] 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- HZEBHPIOVYHPMT-UHFFFAOYSA-N polonium atom Chemical compound [Po] HZEBHPIOVYHPMT-UHFFFAOYSA-N 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910021481 rutherfordium Inorganic materials 0.000 description 1
- YGPLJIIQQIDVFJ-UHFFFAOYSA-N rutherfordium atom Chemical compound [Rf] YGPLJIIQQIDVFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910021477 seaborgium Inorganic materials 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- LTSUHJWLSNQKIP-UHFFFAOYSA-J tin(iv) bromide Chemical compound Br[Sn](Br)(Br)Br LTSUHJWLSNQKIP-UHFFFAOYSA-J 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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- H01L21/02436—Intermediate layers between substrates and deposited layers
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- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
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Description
また、本発明者らは、上記知見を得た後、さらに検討を重ねて本発明を完成させるに至った。
[1] 第1の半導体を主成分として含むn型半導体層と、第2の半導体を主成分として含むi型半導体層と、第3の半導体を主成分として含むp型半導体層とを少なくとも含む半導体装置であって、第1の半導体、第2の半導体および第3の半導体が、いずれもコランダム構造を有する酸化物半導体であることを特徴とする半導体装置。
[2] 前記n型半導体層、前記i型半導体層および前記p型半導体層がこの順に積層されており、PiN構造を形成している前記[1]記載の半導体装置。
[3] 第1の半導体が、アルミニウム、インジウムおよびガリウムから選ばれる1種または2種以上の金属を含む前記[1]または[2]に記載の半導体装置。
[4] 第1の半導体が、ガリウムを含む前記[1]~[3]のいずれかに記載の半導体装置。
[5] 第3の半導体が、周期律表のdブロック金属を含む前記[1]~[4]のいずれかに記載の半導体装置。
[6] 第3の半導体が、周期律表第9族の金属を含む前記[1]~[5]のいずれかに記載の半導体装置。
[7] 第2の半導体が、周期律表のpブロック金属を含む前記[1]~[6]のいずれかに記載の半導体装置。
[8] 第2の半導体が、アルミニウム、インジウムおよびガリウムから選ばれる1種または2種以上の金属を含む前記[1]~[7]のいずれかに記載の半導体装置。
[9] 第2の半導体が、周期律表のdブロック金属を含む前記[1]~[8]のいずれかに記載の半導体装置。
[10] さらに、リサーフ領域を備える前記[1]~[9]のいずれかに記載の半導体装置。
[11] さらに、ガードリングを備える前記[1]~[10]のいずれかに記載の半導体装置。
[12] ダイオードである前記[1]~[11]のいずれかに記載の半導体装置。
[13] ジャンクションバリアショットキーダイオードである前記[1]~[12]のいずれかに記載の半導体装置。
[14] パワーデバイスである前記[1]~[13]のいずれかに記載の半導体装置。
[15] 半導体装置を備える半導体システムであって、前記半導体装置が前記[1]~[14]いずれかに記載の半導体システム。
前記基体は、前記半導体層を支持できるものであれば特に限定されない。前記基体の材料も、本発明の目的を阻害しない限り特に限定されず、公知の基体であってよく、有機化合物であってもよいし、無機化合物であってもよい。前記基体の形状としては、どのような形状のものであってもよく、あらゆる形状に対して有効であり、例えば、平板や円板等の板状、繊維状、棒状、円柱状、角柱状、筒状、螺旋状、球状、リング状などが挙げられるが、本発明においては、基板が好ましい。基板の厚さは、本発明においては特に限定されない。
霧化・液滴化工程は、前記原料溶液を霧化または液滴化する。前記原料溶液の霧化手段または液滴化手段は、前記原料溶液を霧化または液滴化できさえすれば特に限定されず、公知の手段であってよいが、本発明においては、超音波を用いる霧化手段または液滴化手段が好ましい。超音波を用いて得られたミストまたは液滴は、初速度がゼロであり、空中に浮遊するので好ましく、例えば、スプレーのように吹き付けるのではなく、空間に浮遊してガスとして搬送することが可能なミストであるので衝突エネルギーによる損傷がないため、非常に好適である。液滴サイズは、特に限定されず、数mm程度の液滴であってもよいが、好ましくは50μm以下であり、より好ましくは100nm~10μmである。
前記原料溶液は、霧化または液滴化が可能であれば特に限定されず、また、無機材料を含んでいてもよいし、有機材料を含んでいてもよい。本発明においては、前記原料溶液が、金属または金属化合物を含むのが好ましく、該金属または金属化合物は、通常、上記した第1の半導体、第2の半導体または第3の半導体が含有する金属またはその化合物である。
搬送工程では、キャリアガスでもって前記ミストまたは前記液滴を成膜室内に搬送する。前記キャリアガスとしては、本発明の目的を阻害しない限り特に限定されず、例えば、酸素、オゾン、窒素やアルゴン等の不活性ガス、または水素ガスやフォーミングガス等の還元ガスなどが好適な例として挙げられる。また、キャリアガスの種類は1種類であってよいが、2種類以上であってもよく、流量を下げた希釈ガス(例えば10倍希釈ガス等)などを、第2のキャリアガスとしてさらに用いてもよい。また、キャリアガスの供給箇所も1箇所だけでなく、2箇所以上あってもよい。キャリアガスの流量は、特に限定されないが、0.01~20L/分であるのが好ましく、1~10L/分であるのがより好ましい。希釈ガスの場合には、希釈ガスの流量が、0.001~2L/分であるのが好ましく、0.1~1L/分であるのがより好ましい。
成膜工程では、成膜室内で前記ミストまたは液滴を熱反応させることによって、基体上に、前記半導体層を成膜する。熱反応は、熱でもって前記ミストまたは液滴が反応すればそれでよく、反応条件等も本発明の目的を阻害しない限り特に限定されない。本工程においては、前記熱反応を、通常、溶媒の蒸発温度以上の温度で行うが、高すぎない温度(例えば1000℃)以下が好ましく、650℃以下がより好ましく、300℃~650℃が最も好ましい。また、熱反応は、本発明の目的を阻害しない限り、真空下、非酸素雰囲気下、還元ガス雰囲気下および酸素雰囲気下のいずれの雰囲気下で行われてもよいが、非酸素雰囲気下または酸素雰囲気下で行われるのが好ましい。また、大気圧下、加圧下および減圧下のいずれの条件下で行われてもよいが、本発明においては、大気圧下で行われるのが好ましい。なお、膜厚は、成膜時間を調整することにより、設定することができる。
1-1.n型半導体層の形成
1-1-1.成膜装置
図11を用いて、実施例で用いたミストCVD装置19を説明する。ミストCVD装置19は、基板20を載置するサセプタ21と、キャリアガスを供給するキャリアガス供給手段22aと、キャリアガス供給手段22aから送り出されるキャリアガスの流量を調節するための流量調節弁23aと、キャリアガス(希釈)を供給するキャリアガス(希釈)供給手段22bと、キャリアガス(希釈)供給手段22bから送り出されるキャリアガスの流量を調節するための流量調節弁23bと、原料溶液24aが収容されるミスト発生源24と、水25aが入れられる容器25と、容器25の底面に取り付けられた超音波振動子26と、内径40mmの石英管からなる供給管27と、供給管27の周辺部に設置されたヒーター28とを備えている。サセプタ21は、石英からなり、基板20を載置する面が水平面から傾斜している。成膜室となる供給管27とサセプタ21をどちらも石英で作製することにより、基板20上に形成される膜内に装置由来の不純物が混入することを抑制している。
ガリウムアセチルアセトナートと臭化スズとを超純水に混合し、ガリウムに対するスズの原子比が1:0.02およびガリウムアセチルアセトナート0.05モル/Lとなるように水溶液を調整し、この際、臭化水素酸を体積比で3%含有させ、これを原料溶液とした。
上記1-1-2.で得られた原料溶液24aをミスト発生源24内に収容した。次に、基板20として、サファイア基板をサセプタ21上に設置し、ヒーター28を作動させて成膜室27内の温度を630℃にまで昇温させた。次に、流量調節弁23a、23bを開いて、キャリアガス源であるキャリアガス供給手段22a、22bからキャリアガスを成膜室27内に供給し、成膜室27の雰囲気をキャリアガスで十分に置換した後、キャリアガスの流量を1L/分に、キャリアガス(希釈)の流量を1L/分にそれぞれ調節した。なお、キャリアガスとして窒素を用いた。
次に、超音波振動子26を2.4MHzで振動させ、その振動を、水25aを通じて原料溶液24aに伝播させることによって、原料溶液24aを霧化させてミストを生成した。このミストが、キャリアガスによって成膜室27内に導入され、大気圧下、630℃にて、成膜室27内でミストが反応して、基板20上に半導体膜が形成された。なお、成膜時間は120分間であった。
XRD回折装置を用いて、上記1-1-4.にて得られた膜の相の同定を行ったところ、得られた膜はα-Ga203であった。
原料溶液として、臭化ガリウムと臭化マグネシウムとを超純水に混合し、ガリウムに対するマグネシウムの原子比が1:0.01および臭化ガリウム0.1モル/Lとなるように水溶液を調整し、この際、臭化水素酸を体積比で20%含有させたものを用いたこと、成膜温度を520℃としたこと、および成膜時間を60分としたこと以外は、上記n型半導体層の形成と同様にして、上記1-1-4.で得られたn型半導体層上にi型半導体層を形成した。なお、i型半導体層の形成は、マスクを用いて、前記n型半導体層表面の一部にコンタクト電極形成用の領域が露出するようにして行った。得られた膜につき、XRD回折装置を用いて、膜の相の同定を行ったところ、得られた膜はα-Ga203であった。
原料溶液として、臭化ガリウムと臭化マグネシウムとを超純水に混合し、ガリウムに対するマグネシウムの原子比が1:0.01および臭化ガリウム0.1モル/Lとなるように水溶液を調整し、この際、臭化水素酸を体積比で1%含有させたものを用いたこと、成膜温度を580℃としたこと、および成膜時間を60分としたこと以外は、上記i型半導体層の形成と同様にして、上記2.で得られたi型半導体層上にp型半導体層を形成した。得られた膜につき、XRD回折装置を用いて、膜の相の同定を行ったところ、得られた膜はα-Ga203であった。
フォトリソグラフィー、エッチング処理、および電子ビーム蒸着等に付し、コンタクト電極として、前記n型半導体層上にTiを、前記p型半導体層上にPtを形成し、半導体装置を作製した。
上記で得られた半導体装置につき、IV測定を実施した。IV測定の結果を図12に示す。図12から明らかなように、優れた整流性を示し、n型半導体層、i型半導体層、およびp型半導体層が良好な接合を形成することがわかった。また、マグネシウムがp型ドーパントとして正常に機能していることから、p型半導体層の材料として、n型半導体層およびi型半導体層と同じ材料(α-Ga2O3)を用いて、これまで作製が困難であった、ホモ接合による良好なPiN構造を実現できることがわかった。
IV測定の結果および表1に示す値等から電界強度と電圧との関係を求めた。結果を図13に示す。また、比較のために、n型半導体層、i型半導体層およびp型半導体層として(1)SiC(2)Siを用いた場合についても同様の条件でそれぞれ計算を行った。これら結果を図14および図15に示す。
また、図13から明らかなように、本発明のPiN構造によれば、i型半導体層の膜厚が小さい場合であっても高い、十分な耐圧性を有する半導体装置を得ることができる。また、前記n型半導体層としてα-Ga2O3を用いた場合には、n型半導体層またはi型半導体層のキャリア濃度が比較的高い場合(例えば、1×1016/cm3以上)であっても、高い耐圧が得られ、半導体特性に優れていることがわかる。
2 ショットキー電極
3 i型半導体層
4 n型半導体層
5 オーミック電極
6 ガードリング
7 リサーフ領域
8 基板
19 ミストCVD装置
20 基板
21 サセプタ
22a キャリアガス供給手段
22b キャリアガス(希釈)供給手段
23a 流量調節弁
23b 流量調節弁
24 ミスト発生源
24a 原料溶液
25 容器
25a 水
26 超音波振動子
27 供給管
28 ヒーター
29 排気口
Claims (15)
- 第1の半導体を主成分として含むn型半導体層と、第2の半導体を主成分として含むi型半導体層と、第3の半導体を主成分として含むp型半導体層とを少なくとも含む半導体装置であって、第1の半導体、第2の半導体および第3の半導体が、いずれもコランダム構造を有する酸化物半導体であり、前記i型半導体層は、キャリア濃度またはドーパント濃度が前記n型半導体層および前記p型半導体層より小さく、半導体装置の耐圧が400V以上であることを特徴とする半導体装置。
- 前記n型半導体層、前記i型半導体層および前記p型半導体層がこの順に積層されており、PiN構造を形成している請求項1記載の半導体装置。
- 第1の半導体が、アルミニウム、インジウムおよびガリウムから選ばれる1種または2種以上の金属を含む請求項1または2に記載の半導体装置。
- 第1の半導体が、ガリウムを含む請求項1~3のいずれかに記載の半導体装置。
- 第3の半導体が、周期律表のdブロック金属を含む請求項1~4のいずれかに記載の半導体装置。
- 第3の半導体が、周期律表第9族の金属を含む請求項1~5のいずれかに記載の半導体装置。
- 第2の半導体が、周期律表のpブロック金属を含む請求項1~6のいずれかに記載の半導体装置。
- 第2の半導体が、アルミニウム、インジウムおよびガリウムから選ばれる1種または2種以上の金属を含む請求項1~7のいずれかに記載の半導体装置。
- 第2の半導体が、周期律表のdブロック金属を含む請求項1~8のいずれかに記載の半導体装置。
- さらに、リサーフ領域を備える請求項1~9のいずれかに記載の半導体装置。
- さらに、ガードリングを備える請求項1~10のいずれかに記載の半導体装置。
- ダイオードである請求項1~11のいずれかに記載の半導体装置。
- ジャンクションバリアショットキーダイオードである請求項1~12のいずれかに記載の半導体装置。
- パワーデバイスである請求項1~13のいずれかに記載の半導体装置。
- 半導体装置を備える半導体システムであって、前記半導体装置が請求項1~14いずれかに記載の半導体システム。
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