JP2016021562A5 - - Google Patents

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Publication number
JP2016021562A5
JP2016021562A5 JP2015122222A JP2015122222A JP2016021562A5 JP 2016021562 A5 JP2016021562 A5 JP 2016021562A5 JP 2015122222 A JP2015122222 A JP 2015122222A JP 2015122222 A JP2015122222 A JP 2015122222A JP 2016021562 A5 JP2016021562 A5 JP 2016021562A5
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JP
Japan
Prior art keywords
conductive film
opening
forming
insulating layer
transistor
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JP2015122222A
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English (en)
Japanese (ja)
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JP2016021562A (ja
JP6483543B2 (ja
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Priority to JP2015122222A priority Critical patent/JP6483543B2/ja
Priority claimed from JP2015122222A external-priority patent/JP6483543B2/ja
Publication of JP2016021562A publication Critical patent/JP2016021562A/ja
Publication of JP2016021562A5 publication Critical patent/JP2016021562A5/ja
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JP2015122222A 2014-06-18 2015-06-17 半導体装置の作製方法 Active JP6483543B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015122222A JP6483543B2 (ja) 2014-06-18 2015-06-17 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014125329 2014-06-18
JP2014125329 2014-06-18
JP2015122222A JP6483543B2 (ja) 2014-06-18 2015-06-17 半導体装置の作製方法

Related Child Applications (1)

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JP2019024565A Division JP6745927B2 (ja) 2014-06-18 2019-02-14 半導体装置

Publications (3)

Publication Number Publication Date
JP2016021562A JP2016021562A (ja) 2016-02-04
JP2016021562A5 true JP2016021562A5 (enExample) 2018-07-19
JP6483543B2 JP6483543B2 (ja) 2019-03-13

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Family Applications (6)

Application Number Title Priority Date Filing Date
JP2015122222A Active JP6483543B2 (ja) 2014-06-18 2015-06-17 半導体装置の作製方法
JP2019024565A Active JP6745927B2 (ja) 2014-06-18 2019-02-14 半導体装置
JP2020132337A Withdrawn JP2020178144A (ja) 2014-06-18 2020-08-04 半導体装置
JP2021172860A Active JP7291758B2 (ja) 2014-06-18 2021-10-22 半導体装置
JP2023092645A Active JP7570462B2 (ja) 2014-06-18 2023-06-05 半導体装置
JP2024176350A Pending JP2024180434A (ja) 2014-06-18 2024-10-08 半導体装置

Family Applications After (5)

Application Number Title Priority Date Filing Date
JP2019024565A Active JP6745927B2 (ja) 2014-06-18 2019-02-14 半導体装置
JP2020132337A Withdrawn JP2020178144A (ja) 2014-06-18 2020-08-04 半導体装置
JP2021172860A Active JP7291758B2 (ja) 2014-06-18 2021-10-22 半導体装置
JP2023092645A Active JP7570462B2 (ja) 2014-06-18 2023-06-05 半導体装置
JP2024176350A Pending JP2024180434A (ja) 2014-06-18 2024-10-08 半導体装置

Country Status (2)

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US (1) US9455337B2 (enExample)
JP (6) JP6483543B2 (enExample)

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US10546960B2 (en) 2016-02-05 2020-01-28 Semiconductor Energy Laboratory Co., Ltd. Metal oxide film, semiconductor device, and manufacturing method of semiconductor device
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KR102851714B1 (ko) * 2016-05-19 2025-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 복합 산화물 반도체 및 트랜지스터
KR102613288B1 (ko) 2016-07-26 2023-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102592992B1 (ko) * 2016-07-30 2023-10-23 엘지디스플레이 주식회사 플렉서블 표시장치 및 그 제조방법
US10504925B2 (en) 2016-08-08 2019-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
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US10910407B2 (en) 2017-01-30 2021-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10943822B2 (en) * 2018-03-15 2021-03-09 Taiwan Semiconductor Manufacturing Co., Ltd. Forming gate line-end of semiconductor structures
US11404107B2 (en) * 2018-03-29 2022-08-02 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
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JP7583722B2 (ja) 2019-08-09 2024-11-14 株式会社半導体エネルギー研究所 記憶装置
JP7568633B2 (ja) * 2019-10-04 2024-10-16 株式会社半導体エネルギー研究所 半導体装置
JP7681958B2 (ja) * 2020-11-11 2025-05-23 武漢天馬微電子有限公司 薄膜トランジスタ回路
KR20220152737A (ko) * 2021-05-10 2022-11-17 삼성전자주식회사 질소가 도핑된 금속 산화물 반도체막을 포함하는 이미지 센서 및 이의 제조 방법
US20250120182A1 (en) * 2022-02-18 2025-04-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20250185340A1 (en) * 2022-03-18 2025-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2024037619A (ja) * 2022-09-07 2024-03-19 キオクシア株式会社 半導体記憶装置

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