JP6802701B2 - 表示装置、モジュール及び電子機器 - Google Patents
表示装置、モジュール及び電子機器 Download PDFInfo
- Publication number
- JP6802701B2 JP6802701B2 JP2016240371A JP2016240371A JP6802701B2 JP 6802701 B2 JP6802701 B2 JP 6802701B2 JP 2016240371 A JP2016240371 A JP 2016240371A JP 2016240371 A JP2016240371 A JP 2016240371A JP 6802701 B2 JP6802701 B2 JP 6802701B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating layer
- region
- display device
- liquid crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 281
- 239000004973 liquid crystal related substance Substances 0.000 claims description 213
- 230000005540 biological transmission Effects 0.000 claims description 77
- 239000011701 zinc Substances 0.000 claims description 55
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- 229910052738 indium Inorganic materials 0.000 claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052733 gallium Inorganic materials 0.000 claims description 14
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 14
- 229910052718 tin Inorganic materials 0.000 claims description 13
- 229910052727 yttrium Inorganic materials 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 1223
- 239000000758 substrate Substances 0.000 description 216
- 239000010408 film Substances 0.000 description 201
- 238000000034 method Methods 0.000 description 143
- 238000004519 manufacturing process Methods 0.000 description 86
- 230000006870 function Effects 0.000 description 83
- 238000001514 detection method Methods 0.000 description 70
- 239000000463 material Substances 0.000 description 68
- 239000001301 oxygen Substances 0.000 description 52
- 229910052760 oxygen Inorganic materials 0.000 description 52
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 51
- 238000000926 separation method Methods 0.000 description 47
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 46
- 230000001965 increasing effect Effects 0.000 description 44
- 229910052751 metal Inorganic materials 0.000 description 42
- 239000002184 metal Substances 0.000 description 40
- 229910052581 Si3N4 Inorganic materials 0.000 description 34
- 239000007789 gas Substances 0.000 description 34
- 239000012790 adhesive layer Substances 0.000 description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 30
- 229910052739 hydrogen Inorganic materials 0.000 description 27
- 238000012545 processing Methods 0.000 description 27
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 26
- 229910052721 tungsten Inorganic materials 0.000 description 26
- 239000010937 tungsten Substances 0.000 description 26
- 239000001257 hydrogen Substances 0.000 description 23
- 229910052757 nitrogen Inorganic materials 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 230000005684 electric field Effects 0.000 description 22
- 238000010438 heat treatment Methods 0.000 description 22
- 239000012535 impurity Substances 0.000 description 22
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 20
- 239000011733 molybdenum Substances 0.000 description 20
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 19
- 239000004020 conductor Substances 0.000 description 19
- 229910052750 molybdenum Inorganic materials 0.000 description 19
- 230000008569 process Effects 0.000 description 19
- 229910052719 titanium Inorganic materials 0.000 description 19
- 239000010936 titanium Substances 0.000 description 19
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 206010021143 Hypoxia Diseases 0.000 description 17
- 230000001747 exhibiting effect Effects 0.000 description 17
- 238000009413 insulation Methods 0.000 description 17
- 238000004544 sputter deposition Methods 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- -1 linen) Polymers 0.000 description 16
- 239000011347 resin Substances 0.000 description 16
- 229920005989 resin Polymers 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 15
- 239000010949 copper Substances 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 239000000956 alloy Substances 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000013078 crystal Substances 0.000 description 14
- 238000001312 dry etching Methods 0.000 description 14
- 125000006850 spacer group Chemical group 0.000 description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 13
- 125000004429 atom Chemical group 0.000 description 13
- 238000011282 treatment Methods 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 239000007769 metal material Substances 0.000 description 12
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 12
- 239000002356 single layer Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 11
- 230000007423 decrease Effects 0.000 description 11
- 230000007547 defect Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 229910003437 indium oxide Inorganic materials 0.000 description 11
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 238000009832 plasma treatment Methods 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 10
- 229910052735 hafnium Inorganic materials 0.000 description 10
- 229910044991 metal oxide Inorganic materials 0.000 description 10
- 150000004706 metal oxides Chemical class 0.000 description 10
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 229910001930 tungsten oxide Inorganic materials 0.000 description 10
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 9
- 230000008859 change Effects 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 239000012528 membrane Substances 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 9
- 229910052726 zirconium Inorganic materials 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 8
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 8
- 229910052684 Cerium Inorganic materials 0.000 description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 7
- 229910052746 lanthanum Inorganic materials 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052779 Neodymium Inorganic materials 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 239000013081 microcrystal Substances 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000011276 addition treatment Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 238000003795 desorption Methods 0.000 description 4
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 4
- 229910001195 gallium oxide Inorganic materials 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000005477 sputtering target Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 4
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- UWCWUCKPEYNDNV-LBPRGKRZSA-N 2,6-dimethyl-n-[[(2s)-pyrrolidin-2-yl]methyl]aniline Chemical compound CC1=CC=CC(C)=C1NC[C@H]1NCCC1 UWCWUCKPEYNDNV-LBPRGKRZSA-N 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910021389 graphene Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 229910052743 krypton Inorganic materials 0.000 description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 3
- 239000001272 nitrous oxide Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 239000003381 stabilizer Substances 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 238000004435 EPR spectroscopy Methods 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052800 carbon group element Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000003098 cholesteric effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 238000004868 gas analysis Methods 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 2
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 2
- COOBHJUVOWQEBE-UHFFFAOYSA-N 2,2,4,4,6,6,8,8-octamethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane;silicon Chemical compound [Si].C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 COOBHJUVOWQEBE-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910018120 Al-Ga-Zn Inorganic materials 0.000 description 1
- 229910018137 Al-Zn Inorganic materials 0.000 description 1
- 229910018573 Al—Zn Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229920000298 Cellophane Polymers 0.000 description 1
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910002668 Pd-Cu Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 229910020833 Sn-Al-Zn Inorganic materials 0.000 description 1
- 229910020868 Sn-Ga-Zn Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 239000004974 Thermotropic liquid crystal Substances 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002964 rayon Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 239000012209 synthetic fiber Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
- G02F1/13685—Top gates
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
Description
本実施の形態では、本発明の一態様の表示装置、及び当該表示装置の作製方法について、図1乃至図33を用いて説明する。
図1(A)及び図2(A)に、表示装置の一例を示す。図1(A)は、表示装置105の断面図であり、図2(A)は、表示装置105の斜視図である。図2(A)では、明瞭化のため、偏光板130などの構成要素を省略して図示している。図2(A)では、基板61を破線で示す。
本発明の一態様の表示装置が有する基板の材質などに大きな制限はなく、様々な基板を用いることができる。例えば、ガラス基板、石英基板、サファイア基板、半導体基板、セラミック基板、金属基板、またはプラスチック基板等を用いることができる。
本発明の一態様の表示装置が有するトランジスタは、トップゲート型またはボトムゲート型のいずれの構造としてもよい。または、チャネルの上下にゲート電極が設けられていてもよい。トランジスタに用いる半導体材料は特に限定されず、例えば、酸化物半導体、シリコン、ゲルマニウム等が挙げられる。
酸化物半導体層は、少なくともインジウム(In)、亜鉛(Zn)及びM(Al、Ti、Ga、Y、Zr、La、Ce、SnまたはHf等の金属)を含むIn−M−Zn酸化物で表記される膜を含むことが好ましい。また、該酸化物半導体を用いたトランジスタの電気特性のばらつきを減らすため、それらと共に、スタビライザーを含むことが好ましい。
表示装置が有する各絶縁層、オーバーコート、スペーサ等に用いることのできる絶縁材料としては、有機絶縁材料または無機絶縁材料を用いることができる。有機絶縁材料としては、例えば、アクリル樹脂、エポキシ樹脂、ポリイミド樹脂、ポリアミド樹脂、ポリアミドイミド樹脂、シロキサン樹脂、ベンゾシクロブテン系樹脂、及びフェノール樹脂等が挙げられる。無機絶縁層としては、酸化シリコン膜、酸化窒化シリコン膜、窒化酸化シリコン膜、窒化シリコン膜、酸化アルミニウム膜、窒化アルミニウム膜、酸化ハフニウム膜、酸化イットリウム膜、酸化ジルコニウム膜、酸化ガリウム膜、酸化タンタル膜、酸化マグネシウム膜、酸化ランタン膜、酸化セリウム膜、及び酸化ネオジム膜等が挙げられる。
トランジスタのゲート、ソース、ドレインのほか、表示装置が有する各種配線及び電極等の導電層には、アルミニウム、チタン、クロム、ニッケル、銅、イットリウム、ジルコニウム、モリブデン、銀、タンタル、またはタングステンなどの金属、またはこれを主成分とする合金を単層構造または積層構造として用いることができる。例えば、アルミニウム膜上にチタン膜を積層する二層構造、タングステン膜上にチタン膜を積層する二層構造、モリブデン膜上に銅膜を積層した二層構造、モリブデンとタングステンを含む合金膜上に銅膜を積層した二層構造、銅−マグネシウム−アルミニウム合金膜上に銅膜を積層する二層構造、チタン膜または窒化チタン膜と、そのチタン膜または窒化チタン膜上に重ねてアルミニウム膜または銅膜を積層し、さらにその上にチタン膜または窒化チタン膜を形成する三層構造、モリブデン膜または窒化モリブデン膜と、そのモリブデン膜または窒化モリブデン膜上に重ねてアルミニウム膜または銅膜を積層し、さらにその上にモリブデン膜または窒化モリブデン膜を形成する三層構造等がある。例えば、ソース電極225a及びドレイン電極225bを三層構造とする場合、一層目及び三層目には、チタン、窒化チタン、モリブデン、タングステン、モリブデンとタングステンを含む合金、モリブデンとジルコニウムを含む合金、または窒化モリブデンでなる膜を形成し、二層目には、銅、アルミニウム、金または銀、或いは銅とマンガンの合金等の低抵抗材料でなる膜を形成することが好ましい。なお、ITO、酸化タングステンを含むインジウム酸化物、酸化タングステンを含むインジウム亜鉛酸化物、酸化チタンを含むインジウム酸化物、酸化チタンを含むインジウム錫酸化物、インジウム亜鉛酸化物、ITSO等の透光性を有する導電性材料を用いてもよい。
接着層141としては、熱硬化樹脂,光硬化樹脂、または2液混合型の硬化性樹脂などの硬化性樹脂を用いることができる。例えば、アクリル樹脂、ウレタン樹脂、エポキシ樹脂、またはシロキサン樹脂などを用いることができる。
接続体242としては、例えば、異方性導電フィルム(ACF:Anisotropic Conductive Film)、または異方性導電ペースト(ACP:Anisotropic Conductive Paste)などを用いることができる。
着色層131は特定の波長帯域の光を透過する有色層である。着色層131に用いることのできる材料としては、金属材料、樹脂材料、及び顔料または染料が含まれた樹脂材料などが挙げられる。
遮光層132は、隣接する着色層131の間に設けられている。例えば、金属材料、または、顔料もしくは染料を含む樹脂材料を用いて形成されたブラックマトリクスを遮光層132として用いることができる。なお、遮光層132は、駆動回路部64など、表示部62以外の領域にも設けると、導波光などによる光漏れを抑制できるため好ましい(図7等参照)。
図7〜図14に、表示装置の一例をそれぞれ示す。図7は、表示装置105Aの断面図であり、図8は、表示装置105Bが有する副画素の上面図であり、図9は、表示装置105Bの断面図であり、図10〜図12は、それぞれ副画素の上面図の変形例である。図13(A)は、表示装置105Cの断面図であり、図14は、表示装置105Dの断面図である。なお、表示装置105A、表示装置105B、表示装置105C、及び表示装置105Dの斜視図は、図2に示す表示装置105と同様であるため、ここでの説明は省略する。
図14に示す表示装置105Dの作製方法の一例について、図15〜図19を用いて説明する。なお、トランジスタの作製方法の詳細は、実施の形態2を参照することができる。
図7に示す表示装置105Aの作製方法の一例について、図20及び図21を用いて説明する。
図14に示す表示装置105Dの作製方法の一例について、図22及び図23を用いて説明する。
図24に、表示装置の一例を示す。図24は、表示装置105Eの断面図である。なお、表示装置105Eの斜視図は、図2に示す表示装置105と同様であるため、ここでの説明は省略する。
本発明の一態様は、タッチセンサが搭載された表示装置(入出力装置またはタッチパネルともいう)に適用することができる。上述の各表示装置の構成を、タッチパネルに適用することができる。本実施の形態では、表示装置105Cにタッチセンサを搭載する例を主に説明する。
図28及び図29に、タッチパネルの一例を示す。図28(A)は、タッチパネル355Bの斜視図である。図28(B)は、図28(A)を展開した斜視概略図である。なお、明瞭化のため、代表的な構成要素のみを示している。図28(B)では、基板61を破線で輪郭のみ明示している。図29は、タッチパネル355Bの断面図である。
図30に、タッチパネルの一例を示す。図30は、タッチパネル355Cの断面図である。
本実施の形態では、半導体装置について説明する。具体的には、本発明の一態様の表示装置に用いることのできるトランジスタ、及び当該トランジスタの作製方法について、図34乃至図43を用いて説明する。
図34(A)(B)(C)に、トランジスタの一例を示す。図34(A)(B)(C)に示すトランジスタは、スタガ型(トップゲート構造)である。
次に、図34(A)(B)(C)に示すトランジスタと異なる構成について、図35(A)(B)(C)を用いて説明する。
次に、図35(A)(B)(C)に示すトランジスタと異なる構成について、図36及び図37を用いて説明する。
次に、図34に示すトランジスタ300の作製方法の一例について、図38乃至図40を用いて説明する。なお、図38乃至図40は、トランジスタ300の作製方法を説明するチャネル長(L)方向及びチャネル幅(W)方向の断面図である。
次に、図35に示すトランジスタ300Aの作製方法の一例について、図41乃至図43を用いて説明する。なお、図41乃至図43は、トランジスタ300Aの作製方法を説明するチャネル長(L)方向及びチャネル幅(W)方向の断面図である。
本実施の形態では、本発明の一態様の表示装置を有するタッチパネルモジュール及び電子機器について、図44〜図46を用いて説明する。
40 液晶素子
45 光
46 外光
51 基板
56 導電層
56a 導電層
56b 導電層
57 補助配線
58 導電層
60 画素
60a 副画素
60b 副画素
60c 副画素
61 基板
62 表示部
64 駆動回路部
65 配線
69 接続部
72 FPC
72a FPC
72b FPC
73 IC
73a IC
73b IC
81 走査線
82 信号線
91 透過領域
92 反射領域
93 非表示領域
105 表示装置
105A 表示装置
105B 表示装置
105C 表示装置
105D 表示装置
105E 表示装置
106 導電層
111 画素電極
112 共通電極
113 液晶層
115 導電層
116 反射層
117 スペーサ
118 導電層
119 補助配線
121 オーバーコート
123 絶縁層
124 電極
125 絶縁層
126 導電層
127 電極
128 電極
130 偏光板
131 着色層
131a 着色層
131b 着色層
132 遮光層
133a 配向膜
133b 配向膜
134 ギャップ調整膜
138 配線
139 配線
141 接着層
142 接着層
160 保護基板
161 バックライト
162 基板
163 接着層
164 接着層
165 偏光板
166 偏光板
167 接着層
168 接着層
169 接着層
201 トランジスタ
204 接続部
206 トランジスタ
207 接続部
211 絶縁層
212 絶縁層
213 ゲート絶縁層
213_0 絶縁層
214 絶縁層
215 絶縁層
216 絶縁層
220 絶縁層
221 ゲート
221_0 導電層
222 導電層
222a 導電層
222b 導電層
223 ゲート
225a ソース電極
225b ドレイン電極
227 導電層
228 走査線
229 信号線
231 半導体層
231a チャネル領域
231b 低抵抗領域
242 接続体
242b 接続体
243 接続体
244 導電層
245 導電層
251 導電層
252 接続部
253 導電層
255 導電層
300 トランジスタ
300A トランジスタ
300B トランジスタ
300C トランジスタ
301 作製基板
302 基板
303 分離層
304 絶縁層
305 酸化物絶縁層
306 導電層
307 酸化物半導体層
308 酸化物半導体層
308d ドレイン領域
308f 領域
308i チャネル領域
308s ソース領域
309 分離層
310 絶縁層
310_0 絶縁層
312 導電層
312_0 導電層
316 絶縁層
318 絶縁層
320a 導電層
320b 導電層
340 マスク
341a 開口部
341b 開口部
343 開口部
355 タッチパネル
355A タッチパネル
355B タッチパネル
355C タッチパネル
370 表示装置
375 入力装置
376 入力装置
379 表示装置
601 パルス電圧出力回路
602 電流検知回路
603 容量
621 電極
622 電極
3501 配線
3502 配線
3510 配線
3511 配線
3515_1 ブロック
3515_2 ブロック
3516 ブロック
5000 筐体
5001 表示部
5002 表示部
5003 スピーカ
5004 LEDランプ
5005 操作キー
5006 接続端子
5007 センサ
5008 マイクロフォン
5009 スイッチ
5010 赤外線ポート
5011 記録媒体読込部
5012 スタンド
5013 リモコン操作機
5014 アンテナ
5015 シャッターボタン
5016 受像部
5017 充電器
5018 バンド
5019 留め金
5020 アイコン
5021 アイコン
8000 タッチパネルモジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8007 バックライト
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリ
Claims (9)
- 透過領域と反射領域を有する表示装置であり、
前記表示装置は、液晶素子、トランジスタ、走査線、信号線、可視光を反射する層、及び第1の絶縁層を有し、
前記液晶素子は、画素電極、共通電極、及び液晶層を有し、
前記トランジスタは、半導体層、ゲート、及びゲート絶縁層を有し、
前記第1の絶縁層は、前記画素電極と前記トランジスタとの間に位置し、
前記第1の絶縁層は、開口部を有し、
前記画素電極は、前記液晶層と前記第1の絶縁層との間に位置し、
前記共通電極は、可視光を透過する機能を有し、
前記半導体層は、第1の領域と第2の領域を有し、
前記第1の領域は、前記ゲート絶縁層を介して前記ゲートと重なり、
前記第2の領域は、前記画素電極と接する第1の部分と、前記第1の絶縁層における開口部の側面と接する第2の部分と、を有し、
前記第2の領域の抵抗率は、前記第1の領域の抵抗率よりも低く、
前記第1の部分は、前記透過領域または前記反射領域に位置し、
前記反射領域は、前記可視光を反射する層を有し、
前記可視光を反射する層は、前記走査線または前記信号線と前記液晶層との間に位置する部分を有する、表示装置。 - 透過領域と反射領域を有する表示装置であり、
前記表示装置は、液晶素子、トランジスタ、走査線、信号線、可視光を反射する層、及び第1の絶縁層を有し、
前記液晶素子は、画素電極、共通電極、及び液晶層を有し、
前記トランジスタは、酸化物半導体層、ゲート、及びゲート絶縁層を有し、
前記第1の絶縁層は、前記画素電極と前記トランジスタとの間に位置し、
前記第1の絶縁層は、開口部を有し、
前記画素電極は、前記液晶層と前記第1の絶縁層との間に位置し、
前記画素電極及び前記共通電極は、それぞれ、可視光を透過する機能を有し、
前記酸化物半導体層は、第1の領域と第2の領域を有し、
前記第1の領域は、前記ゲート絶縁層を介して前記ゲートと重なり、
前記第2の領域は、前記画素電極と接する第1の部分と、前記第1の絶縁層における開口部の側面と接する第2の部分と、を有し、
前記第2の領域の抵抗率は、前記第1の領域の抵抗率よりも低く、
前記第1の部分は、前記透過領域に位置し、
前記反射領域は、前記可視光を反射する層を有し、
前記可視光を反射する層は、前記走査線または前記信号線と前記液晶層との間に位置する第3の部分を有する、表示装置。 - 請求項2において、
前記画素電極及び前記酸化物半導体層は、インジウムと、亜鉛と、アルミニウム、ガリウム、イットリウム、及びスズのうち少なくとも一つと、を有する、表示装置。 - 請求項2または3において、
前記共通電極は、インジウムと、亜鉛と、アルミニウム、ガリウム、イットリウム、及びスズのうち少なくとも一つと、を有する、表示装置。 - 請求項2乃至4のいずれか一において、
前記可視光を反射する層は、前記第1の領域と重なる第4の部分を有する、表示装置。 - 請求項1乃至5のいずれか一において、
前記反射領域における前記液晶層の厚さは、前記透過領域における前記液晶層の厚さの40%以上60%以下である、表示装置。 - 請求項1乃至6のいずれか一において、
前記画素電極の前記液晶層側の面は、前記第1の絶縁層の前記液晶層側の面と同一面を形成することができる、表示装置。 - 請求項1乃至7のいずれか一に記載の表示装置と、
フレキシブルプリント回路基板又は集積回路と、を有する、モジュール。 - 請求項8に記載のモジュールと、
アンテナ、バッテリ、筐体、カメラ、スピーカ、マイク、又は操作ボタンと、を有する、電子機器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015247448 | 2015-12-18 | ||
JP2015247448 | 2015-12-18 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017116929A JP2017116929A (ja) | 2017-06-29 |
JP2017116929A5 JP2017116929A5 (ja) | 2020-01-23 |
JP6802701B2 true JP6802701B2 (ja) | 2020-12-16 |
Family
ID=59066781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016240371A Active JP6802701B2 (ja) | 2015-12-18 | 2016-12-12 | 表示装置、モジュール及び電子機器 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10114263B2 (ja) |
JP (1) | JP6802701B2 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI727041B (zh) | 2016-05-20 | 2021-05-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置 |
TW201813147A (zh) | 2016-07-15 | 2018-04-01 | 半導體能源研究所股份有限公司 | 顯示裝置、顯示模組、電子裝置及顯示裝置的製造方法 |
US10180605B2 (en) | 2016-07-27 | 2019-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
CN107797958B (zh) | 2016-09-06 | 2023-07-28 | 株式会社半导体能源研究所 | 电子设备、图像显示方法、程序及显示系统 |
CN107329625B (zh) * | 2017-07-12 | 2020-07-14 | 上海天马微电子有限公司 | 触控显示装置 |
JP2019029164A (ja) * | 2017-07-28 | 2019-02-21 | セイコーエプソン株式会社 | ウェアラブル機器 |
US10146080B1 (en) * | 2017-11-21 | 2018-12-04 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Method for manufacturing display device |
JP7399081B2 (ja) * | 2018-05-11 | 2023-12-15 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、及び電子機器 |
KR20200019408A (ko) * | 2018-08-14 | 2020-02-24 | 엘지디스플레이 주식회사 | 유기발광표시장치 |
CN109471279B (zh) * | 2018-12-24 | 2021-11-12 | Tcl华星光电技术有限公司 | 阵列基板以及液晶显示面板 |
US11210048B2 (en) | 2019-10-04 | 2021-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module, and electronic device |
CN110970477B (zh) * | 2019-10-31 | 2022-09-30 | 武汉天马微电子有限公司 | 有机发光显示面板和显示装置 |
US11557679B2 (en) * | 2020-03-02 | 2023-01-17 | Sharp Kabushiki Kaisha | Active matrix substrate and display device |
CN113805389A (zh) * | 2020-06-15 | 2021-12-17 | 瀚宇彩晶股份有限公司 | 像素阵列基板及显示装置 |
CN112319380A (zh) * | 2020-11-03 | 2021-02-05 | 深圳铭薪房车科技有限公司 | 车载智能平板显示器 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6608654B2 (en) * | 1992-09-11 | 2003-08-19 | Kopin Corporation | Methods of fabricating active matrix pixel electrodes |
US6127199A (en) | 1996-11-12 | 2000-10-03 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
JP4229107B2 (ja) | 1996-11-22 | 2009-02-25 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法,アクティブマトリクス基板および液晶表示装置 |
EP1770788A3 (en) * | 2005-09-29 | 2011-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
EP2924498A1 (en) | 2006-04-06 | 2015-09-30 | Semiconductor Energy Laboratory Co, Ltd. | Liquid crystal desplay device, semiconductor device, and electronic appliance |
JP2009099887A (ja) * | 2007-10-19 | 2009-05-07 | Hitachi Displays Ltd | 表示装置 |
JP5246782B2 (ja) | 2008-03-06 | 2013-07-24 | 株式会社ジャパンディスプレイウェスト | 液晶装置および電子機器 |
JP2010033038A (ja) | 2008-06-30 | 2010-02-12 | Nec Electronics Corp | 表示パネル駆動方法及び表示装置 |
WO2011004755A1 (en) | 2009-07-10 | 2011-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
BR112012001655A2 (pt) * | 2009-07-24 | 2017-06-13 | Sharp Kk | método de fabricação de substrato de transistor de filme fino |
WO2011061982A1 (ja) | 2009-11-18 | 2011-05-26 | シャープ株式会社 | 透明電極基板、前駆透明電極基板、及び透明電極基板の製造方法 |
US20130082272A1 (en) * | 2010-06-15 | 2013-04-04 | Sharp Kabushiki Kaisha | Active matrix substrate |
WO2012004958A1 (ja) * | 2010-07-09 | 2012-01-12 | シャープ株式会社 | 薄膜トランジスタ基板及びその製造方法並びに液晶表示パネル |
US8558960B2 (en) * | 2010-09-13 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US9443984B2 (en) | 2010-12-28 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
TWI604609B (zh) | 2012-02-02 | 2017-11-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
JP5906132B2 (ja) * | 2012-05-09 | 2016-04-20 | 株式会社ジャパンディスプレイ | 表示装置 |
CN103094354B (zh) * | 2013-01-28 | 2015-08-12 | 合肥京东方光电科技有限公司 | 阵列基板及其制造方法、显示装置 |
TWI802017B (zh) | 2013-05-16 | 2023-05-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
CN104777649A (zh) * | 2015-04-21 | 2015-07-15 | 合肥鑫晟光电科技有限公司 | 显示基板及其制备方法、显示装置 |
KR20180093000A (ko) * | 2015-12-11 | 2018-08-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 분리 방법 |
-
2016
- 2016-12-12 JP JP2016240371A patent/JP6802701B2/ja active Active
- 2016-12-12 US US15/375,518 patent/US10114263B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10114263B2 (en) | 2018-10-30 |
US20170176791A1 (en) | 2017-06-22 |
JP2017116929A (ja) | 2017-06-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6802701B2 (ja) | 表示装置、モジュール及び電子機器 | |
JP6863725B2 (ja) | 表示装置 | |
JP7150906B2 (ja) | 半導体装置 | |
US11719980B2 (en) | Display device, module, and electronic device | |
JP7084969B2 (ja) | 表示装置 | |
JP7095026B2 (ja) | 半導体装置 | |
KR102553625B1 (ko) | 터치 패널 | |
JP7460314B2 (ja) | 表示装置の作製方法 | |
JP2020174191A (ja) | 半導体装置 | |
US8823754B2 (en) | Liquid crystal display device and method for driving the same | |
JP2021051309A (ja) | 表示装置 | |
JP7089478B2 (ja) | 表示装置、表示モジュール、及び電子機器 | |
TW201801189A (zh) | 半導體裝置及其製造方法、顯示裝置、及電子裝置 | |
JP2019024105A (ja) | 半導体装置の作製方法 | |
KR20180073462A (ko) | 표시 장치 및 표시 방법 | |
JP2020080416A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191205 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191205 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200909 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20201104 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20201127 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6802701 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |