TWI715938B - 用於半導體處理腔室的磁感應電漿系統及其使用方法 - Google Patents

用於半導體處理腔室的磁感應電漿系統及其使用方法 Download PDF

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TWI715938B
TWI715938B TW108106755A TW108106755A TWI715938B TW I715938 B TWI715938 B TW I715938B TW 108106755 A TW108106755 A TW 108106755A TW 108106755 A TW108106755 A TW 108106755A TW I715938 B TWI715938 B TW I715938B
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曹台昇
鄭順旭
金正勳
小林悟
肯尼士Ｄ 夏茲
壽南 朴
迪米奇 路柏曼斯基
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美商應用材料股份有限公司
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Abstract

提供了用於產生電漿產物的示例性磁感應電漿系統。磁感應電漿系統可包括第一電漿源，第一電漿源包括複數個第一部分和複數個第二部分，複數個第一部分和複數個第二部分以交替的方式佈置且彼此流體地耦合，使得在第一電漿源內產生的電漿產物的至少一部分可循環通過第一電漿源內的複數個第一部分的至少一個和第一電漿源內的複數個第二部分的至少一個。複數個第二部分的每一個可包括電介質材料。系統可進一步包括複數個第一磁性元件，複數個第一磁性元件的每一個可界定封閉迴路。複數個第二部分的每一個可界定複數個凹槽，複數個凹槽用於在其中接收複數個第一磁性元件的一個。

Description

用於半導體處理腔室的磁感應電漿系統及其使用方法
本技術關於半導體處理和配備。更具體地，本技術關於用於半導體處理和配備的磁感應電漿源。
藉由在基板表面上產生複雜圖案化的材料層的處理使積體電路成為可能。在基板上產生圖案化材料需要用於移除暴露材料的受控方法。化學蝕刻用於各種目的，包括將光阻中的圖案轉移到下面的層、減薄層，或已經存在於表面上的特徵的減薄橫向尺寸。通常期望具有比另一種材料更快地蝕刻一種材料的蝕刻處理，從而促進(例如)圖案轉移處理。據說這種蝕刻處理對第一種材料具有選擇性。由於材料、電路和處理的多樣性，已經開發出具有對各種材料的選擇性的蝕刻處理。
基於處理中使用的材料，蝕刻處理可被稱為濕式或乾式。濕式HF蝕刻優先移除氧化矽而不是其他電介質和材料。然而，濕式處理可能難以穿透某些受限制的溝槽，且有時亦可能使剩餘材料變形。在基板處理區域內形成的局部電漿中產生的乾式蝕刻可穿透更受限制的溝槽 並表現出更少的精細剩餘結構的變形。然而，局部電漿可能在它們放電時通過電弧的產生而損壞基板。
因此，存在有可用以生產高品質裝置和結構的改進系統和方法的需求。本技術解決了這些和其他需求。
用於產生電漿產物的示例性系統可包括磁感應電漿系統。磁感應電漿系統可包括第一電漿源。第一電漿源可包括一或多個第一部分和一或多個第二部分。一或多個第一部分和一或多個第二部分可彼此流體地耦合，使得在第一電漿源內產生的電漿產物的至少一部分可循環通過一或多個第一部分的至少一個。在第二電漿源內產生的電漿產物的至少一部分也可循環通過第一電漿源內的一或多個第二部分的至少一個。一或多個第二部分的每一個可包括電介質材料。一或多個第一部分和一或多個第二部分可以交替的方式佈置，使得一或多個第一部分可至少部分地藉由一或多個第二部分彼此電絕緣。
在一些實施例中，磁電漿感應系統可進一步包括一或多個第一磁性元件。一或多個第一磁性元件的每一個可界定封閉迴路並可圍繞一或多個第二部分的一個而定位。第一電漿源可界定第一環形形狀。第一環形形狀可包括第一環形延伸部和垂直於第一環形延伸部的第一環形軸線。一或多個第一部分的每一個可包括平行於第一環形軸線的第一尺寸。一或多個第二部分的每一個可包括平行於第一環形軸線的第二尺寸。第一尺寸可大於第二尺 寸，使得一或多個第二部分可界定一或多個凹槽。一或多個凹槽的每一個可經配置以接收一或多個第一磁性元件的一個的至少一部分。
在一些實施例中，一或多個第一部分的每一個可包括第一開口和第二開口。一或多個第一部分的每一個以及對應的第一和第二開口可界定平行於第一環形軸線的流動通道，使得用於在第一電漿源內產生電漿產物的前驅物可通過第一開口而流到每個第一部分中，且所產生的電漿產物的至少一部分可通過第二開口而流出每個第一部分。
在一些實施例中，磁感應電漿系統可進一步包括一或多個第一介電環構件和一或多個第二介電環構件。一或多個第一介電環構件可定位在第一開口之上方，且一或多個第二介電環構件可定位在第二開口之下方，使得一或多個第一部分可在當磁感應電漿系統可整合到半導體處理腔室中，且可沿著第一環形軸線定位在半導體處理腔室的金屬部件之間時彼此電絕緣。
在一些實施例中，半導體處理腔室可包括氣體入口組件和氣體分配組件。氣體入口組件可位於磁感應電漿系統的上游。氣體分配組件可位於磁感應電漿系統的下游。一或多個第一介電環構件可界定第一平面支撐表面並可經配置以支撐氣體入口組件。一或多個第二介電環構件可界定第二平面支撐表面且可經配置以藉由氣體分配組件支撐。
在一些實施例中，一或多個第一部分的每一個可包括弧形管狀主體。在一些實施例中，一或多個第二部分的每一個可包括配置在每個第二部分的兩個相對端處的一對凸緣且可經配置以將每個第二部分與兩個相鄰的第一部分耦合。在一些實施例中，一或多個第一部分的每一個可包括沿著第一環形延伸部的第一延伸部。一或多個第二部分的每一個可包括沿著第一環形延伸部的第二延伸部。第一延伸部與第二延伸部的比率可在約10：1和約2：1之間，使得可促進第一電漿源內的電漿產物的至少一部分的循環。
在一些實施例中，磁感應電漿系統可進一步包括第二電漿源。第二電漿源可界定第二環形形狀。第二環形形狀可包括第二環形延伸部和垂直於第二環形延伸部的第二環形軸線。第二環形軸線可與第一環形軸線對準。第二電漿源可從第一電漿源徑向向內定位。第二電漿源可包括第三部分和第四部分。第三部分或第四部分的至少一個可包括電介質材料。第二電漿源可進一步包括至少一個第二磁性元件。至少一個第二磁性元件可界定封閉迴路並可定位在第三部分或第四部分的至少一個周圍。在一些實施例中，至少一個第二磁性元件可定位在與一或多個第一磁性元件的每一個的方位角不同的方位角處，使得由一或多個第一磁性元件的每一個所產生的電場和由至少一個第二磁性元件所產生的電場之間的干涉可減少。
在一些實施例中，第一電漿源和第二電漿源可配置成使得離開第一電漿源的電漿產物可擴散到基板的第一區域上，且離開第二電漿源的電漿產物可擴散到基板的第二區域上。第一區域可界定基本上環形的形狀。第二區域可界定基本上圓形的形狀。第一區域和第二區域可重疊。
在一些實施例中，磁感應電漿系統可進一步包括一或多個電耦合的第一線圈和第二線圈。一或多個電耦合的第一線圈的每一個可圍繞一或多個第一磁性元件的每一個的至少一部分而配置。第二線圈可圍繞至少一個第二磁性元件的至少一部分而配置。磁感應電漿系統可藉由LLC諧振半橋電路而驅動。LLC諧振半橋電路可經配置成以第一頻率向一或多個電耦合的第一線圈供應第一電流。LLC諧振半橋電路可經配置成以第二頻率向第二線圈供應第二電流。第一頻率可匹配第二頻率。在一些實施例中，LLC諧振半橋電路可經配置成以在約100 kHz和約20 MHz之間的頻率而供應第一電流和第二電流。在一些實施例中，LLC諧振半橋電路可經配置以向一或多個電耦合的第一線圈供應第一功率並向第二線圈供應第二功率。第一功率可大於第二功率。
本技術還可包括產生電漿產物的方法。方法可包括使前驅物流到電漿源中。方法可進一步包括由前驅物形成電漿以產生電漿產物。電漿源可界定第一環形形狀。第一環形形狀可包括第一環形延伸部和垂直於第一環形延伸部的第一環形軸線。電漿源可包括一或多個第一部分和一或多個第二部分。一或多個第一部分和一或多個第二部分可沿著第一環形延伸部彼此流體地耦合，使得電漿產物的第一部分可基本上沿著電漿源內的第一個環形延伸部通過一或多個第一部分的至少一個而循環。電漿產物的第一部分可基本上沿著電漿源內的第一環形延伸部通過一或多個第二部分的至少一個而進一步循環。一或多個第二部分的每一個可包括電介質材料。一或多個第一部分和一或多個第二部分可以交替的方式佈置，使得一或多個第一部分可至少部分地藉由一或多個第二部分而彼此電絕緣。
在一些實施例中，電漿源可進一步包括一或多個第一磁性元件。一或多個第一磁性元件的每一個可界定封閉迴路並可圍繞一或多個第二部分的一個而定位。一或多個第一部分的每一個可包括平行於第一環形軸線的第一尺寸。一或多個第二部分的每一個可包括平行於第一環形軸線的第二尺寸。第一尺寸可大於第二尺寸，使得一或多個第二部分可界定一或多個凹槽。一或多個凹槽的每一個可經配置以接收一或多個第一磁性元件的一個的至少一部分。
在一些實施例中，用於產生電漿產物的方法可進一步包括將電漿源內的壓力維持在約1 mTorr至約500 Torr之間。在一些實施例中，電漿源可進一步包括一或多個電耦合線圈。一或多個電耦合線圈的每一個可圍繞一或多個第一磁性元件的每一個的至少一部分而配置。在一些實施例中，方法可進一步包括藉由LLC諧振半橋電路以在約100 kHz和約20 MHz之間的頻率向一或多個電耦合線圈供應電流。在一些實施例中，方法可進一步包括藉由LLC諧振半橋電路向一或多個電耦合線圈供應在約100 W和約1,000 W之間的功率，以從電漿源內的前驅物產生產物。
本技術還可包括一種包括磁感應電漿系統的半導體處理腔室。磁感應電漿系統可包括具有第一環形形狀的第一電漿源。第一電漿源可界定第一環形形狀的第一環形凹槽。磁感應電漿系統可進一步包括第一磁性元件。第一磁性元件可形成封閉迴路並可定位在第一電漿源的一部分周圍。第一磁性元件的至少一部分可容納在第一環形凹槽內。在一些實施例中，第一電漿源可包括用於前驅物的第一入口，用於在第一電漿源內從前驅物產生電漿產物。第一電漿源可進一步包括用於所產生的電漿產物的第一出口。第一入口、第一出口和第一電漿源可包括沿著第一環形形狀的徑向而量測的共同寬度尺寸。
在一些實施例中，磁感應電漿系統可進一步包括具有第二環形形狀的第二電漿源。第二電漿源和第一電漿源可具有共同的環形軸線。第二電漿源可從第一電漿源徑向向內定位。第二電漿源可界定第二環形形狀的第二環形凹槽。磁感應電漿系統可進一步包括第二磁性元件。第二磁性元件可形成封閉迴路並可定位在第二電漿源的一部分周圍。第二磁性元件的至少一部分可容納在第二環形凹槽內。第二電漿源可包括用於前驅物的第二入口及用於所產生的電漿產物的第二出口，第二入口用於在第二電漿源內從前驅物產生電漿產物。第二入口、第二出口和第二電漿源可具有沿著第二環形形狀的徑向而量測的共同寬度尺寸。第一磁性元件可以第一方位角定位。第二磁性元件可以第二方位角定位。第一方位角可與第二方位角不同。
與傳統系統和技術相比，這種技術可提供許多益處。例如，於此描述的磁感應電漿系統可允許低驅動功率，並且可產生高功率傳輸效率。另外，驅動功率、頻率和電流可為完全可調節的，以允許調節所產生的電漿的組成和性質。此外，磁感應電漿系統可操作以在從幾十mTorr至幾百Torr的範圍的寬操作壓力下產生電漿。結合以下的實施方式和附隨的圖式更詳細地描述這些和其他實施例以及它們的許多優點和特徵。
傳統的電漿生成系統通常可利用全橋電路驅動方案，全橋電路驅動方案可能由於驅動電路中的功率損耗而消耗大量功率，且操作成本非常高。另外，藉由全橋電路驅動的傳統電漿生成系統通常可能需要10,000 W或更高的高功率來生成和維持電漿。
於此描述的磁感應電漿系統的各種實施例可利用特別配置的LLC諧振半橋電路驅動方案。當與用於電漿生成的傳統全橋電路相比時，LLC諧振半橋電路通常可更可靠且成本有效。當與使用全橋電路驅動方案的傳統電漿生成系統相比時，LLC諧振半橋電路可進一步產生更高的功率傳輸效率。在使用全橋電路驅動方案的傳統電漿生成系統中，驅動電路上的能量損失可能很大。於此所述的磁感應電漿系統可產生從功率源到電漿的更大的能量傳輸效率，因為LLC諧振半橋電路驅動方案可能需要顯著更低的功率來點燃及/或維持電漿，同時產生類似的前驅物氣體的離解。此外，於此描述的磁感應電漿系統可允許從0 W到約1,000 W或更高的功率調節。藉由調節功率輸出，可調節前驅物氣體的解離速率以獲得所期望的電漿產物組成。於此所述的磁感應電漿系統可進一步允許從幾十kHz到幾十MHz或更高的寬操作頻率範圍，以及從幾十mTorr到幾百Torr或更高的寬操作壓力範圍，在該範圍下可生成和維持穩定的電漿。
第 1 圖 顯示了根據實施例的沉積、蝕刻、烘焙和固化腔室的處理系統100的一個實施例的頂視平面圖。在圖式中，一對前開式晶圓傳送盒（FOUP）102供應各種尺寸的基板，這些基板由機械臂104接收並且在被放置到基板處理腔室108a-f（位於串聯部分109a-c中）之一個中之前放置在低壓保持區域106中。第二機械臂110可用以將基板晶圓從保持區域106傳送到基板處理腔室108a-f並返回。除了循環層沉積（CLD）、原子層沉積（ALD）、化學氣相沉積（CVD）、物理氣相沉積（PVD）、蝕刻、預清潔、脫氣、取向和其他基板處理之外，每個基板處理腔室108a-f可配備以執行多種基板處理操作，包括於此所述的乾式蝕刻處理。
基板處理腔室108a-f可包括一或多個系統部件，用於在基板晶圓上沉積、退火、固化及/或蝕刻介電或金屬膜。在一種配置中，兩對處理腔室（如，108c-d和108e-f）可用以在基板上沉積材料，且第三對處理腔室（如，108a-b）可用於蝕刻沉積材料。在另一種配置中，所有三對腔室（如，108a-f）可配置成蝕刻基板上的介電或金屬膜。所描述的處理的任何一或多個可在與不同實施例中所示的製造系統分開的（多個）腔室中進行。應當理解系統100可考慮用於介電膜的沉積、蝕刻、退火和固化腔室的附加配置。
第 2A 圖 顯示了示例性處理腔室系統200的剖視圖，其中處理腔室內具有分隔的電漿生成區域。在膜蝕刻（如，氮化鈦、氮化鉭、鎢、銅、鈷、矽、多晶矽、氧化矽、氮化矽、氮氧化矽、碳氧化矽等）期間，處理氣體可通過氣體入口組件205流到第一電漿區域215中。遠端電漿系統（RPS）201可任選地包括在系統中，且可處理第一氣體，第一氣體接著行進通過氣體入口組件205。入口組件205可包括兩個或更多個不同的氣體供應通道，其中第二通道（未顯示）可繞過RPS 201（若包括的話）。
根據實施例顯示了且可包括各個冷卻板203、面板217、離子抑制器223、噴頭225和基板支撐件265（基板支撐件265上設置有基板255）。基座265可具有熱交換通道，熱交換流體通過該熱交換通道流動以控制基板的溫度，熱交換通道可在處理操作期間操作以加熱及/或冷卻基板或晶圓。基座265（其可包含鋁、陶瓷或其組合）的晶圓支撐盤也可使用嵌入式電阻加熱器元件而被電阻加熱，以實現相對高的溫度，諸如從高達或約100℃到更高於或約600℃。
面板217可為金字塔形、圓錐形或具有狹窄的頂部部分擴展成寬的底部部分的另一類似結構。如圖所示，面板217可另外是平坦的，且包括用以分配處理氣體的複數個通道。取決於RPS 201的使用，電漿生成氣體及/或電漿激發物種可通過在面板217中的複數個孔（如第2B圖所示），用於更均勻地輸送到第一電漿區域215中。
示例性配置可包括使氣體入口組件205通向由面板217從第一電漿區域215分隔的氣體供應區域258，使得氣體/物種通過面板217中的孔流到第一電漿區域215中。可選擇結構和操作特徵以防止電漿從第一電漿區域215返回到供應區域258、氣體入口組件205和流體供應系統210中的顯著回流。面板217（或腔室的導電頂部部分）及噴頭225顯示為具有位於特徵之間的絕緣環220，絕緣環220允許AC電位相對於噴頭225及/或離子抑制器223施加到面板217。絕緣環220可定位在面板217及噴頭225及/或離子抑制器223之間，使得能夠在第一電漿區域中形成電容耦合電漿（CCP）。擋板（未顯示）可另外位於第一電漿區域215中，或以其他方式與氣體入口組件205耦合，以影響通過氣體入口組件205流到區域中的流體。
離子抑制器223可包含板或其他幾何形狀，其在整個結構中界定複數個孔，這些孔經配置以抑制離子帶電物種從第一電漿區域215遷移出來，同時允許不帶電的中性或自由基物種通過離子抑制器223進到在抑制器和噴頭之間的活化氣體輸送區域。在實施例中，離子抑制器223可包含具有各種孔配置的多孔板。這些不帶電的物種可包括高反應性物種，高反應性物種藉由較少反應性的載氣輸送通過孔。如上所述，離子物種通過孔的遷移可減少，且在一些情況下可完全抑制。控制通過離子抑制器223的離子物種的量可有利地提供對與下面的晶圓基板接觸的氣體混合物的增加的控制，這繼而可增加對氣體混合物的沉積及/或蝕刻特性的控制。例如，調整氣體混合物的離子濃度可顯著改變其蝕刻選擇性，如，SiNx：SiOx蝕刻比率、Si：SiOx蝕刻比率等。在執行沉積的替代實施例中，其還可偏移用於電介質材料的保形-可流動式沉積的平衡。
離子抑制器223中的複數個孔可經配置以控制穿過離子抑制器223的活化氣體（亦即，離子、自由基及/或中性物種）的通過。例如，可控制孔的深寬比、或孔直徑與長度及/或孔的幾何形狀，使得減少活化氣體中的離子帶電物種通過離子抑制器223的流動。離子抑制器223中的孔可包括面向電漿激發區域215的錐形部分及面向噴頭225的圓柱形部分。圓柱形部分可經調整形狀和尺寸以控制通往噴頭225的離子物種的流動。可調節的電偏壓也可施加到離子抑制器223，作為控制離子物種通過抑制器的流動的附加手段。
離子抑制器223可用以減少或消除從電漿生成區域行進到基板的離子帶電物種的量。不帶電的中性和自由基物種仍然可通過離子抑制器中的開口以與基板反應。應注意在實施例中可不執行在基板周圍的反應區域中完全消除離子帶電物種。在某些情況下，離子物種意欲到達基板以執行蝕刻及/或沉積處理。在這些情況下，離子抑制器可幫助將反應區域中的離子物種的濃度控制在有助於處理的水平。
噴頭225與離子抑制器223組合可允許存在於第一電漿區域215中的電漿避免直接激發基板處理區域233中的氣體，同時仍然允許激發物種從腔室電漿區域215行進到基板處理區域233中。以這種方式，腔室可經配置以防止電漿接觸將蝕刻的基板255。這可有利地保護在基板上圖案化的各種複雜結構和膜，若直接與所產生的電漿接觸，則各種複雜結構和膜可能損壞、錯位或以其他方式翹曲。另外，當允許電漿接觸基板或接近基板水平時，氧化物物種蝕刻的速率可能增加。因此，若暴露的材料區域是氧化物，則可藉由遠離基板維持電漿來進一步保護這種材料。
處理系統可進一步包括功率供應器240，功率供應器240與處理腔室電耦合，以向面板217、離子抑制器223、噴頭225及/或基座265提供電功率，以在第一電漿區域215或處理區域233中產生電漿。功率供應器可經配置以取決於所執行的處理向腔室輸送可調節的功率量。此種配置可允許可調諧電漿用於正在執行的處理中。與遠端電漿單元不同，遠端電漿單元通常具有開啟或關閉功能，可調諧電漿可經配置以向電漿區域215輸送特定量的功率。這繼而可允許發展特定的電漿特性，使得前驅物可以特定方式解離，以增強由此等前驅物所產生的蝕刻輪廓。
電漿可在噴頭225之上方的腔室電漿區域215或噴頭225之下方的基板處理區域233中點燃。電漿可存在於腔室電漿區域215中，以從（例如）含氟前驅物或其他前驅物的流入產生自由基前驅物。通常在射頻（RF）範圍內的AC電壓可施加在處理腔室的導電頂部部分（諸如面板217）和噴頭225及/或離子抑制器223之間，以在沉積期間點燃腔室電漿區域215中的電漿。RF功率供應器可產生13.56 MHz的高RF頻率，但是也可單獨產生其他頻率或與13.56 MHz頻率組合產生其他頻率。
第 2B 圖 顯示了影響通過面板217的處理氣體分配的特徵的詳細視圖253。如第2A圖和第2B圖所示，面板217、冷卻板203和氣體入口組件205交叉以界定氣體供應區域258，處理氣體可從氣體入口205輸送到氣體供應區域258中。氣體可填充氣體供應區域258並通過面板217中的孔259而流到第一電漿區域215。孔259可經配置成以基本上單向的方式引導流動，使得處理氣體可流到處理區域233中，但是可在橫穿面板217之後部分地或完全地防止流回到氣體供應區域258中。
用於在處理腔室部分200中使用的氣體分配組件（諸如噴頭225）可被稱為雙通道噴頭（DCSH），且在第3圖中描述的實施例中另外詳述。雙通道噴頭可提供允許在處理區域233外側分離蝕刻劑的蝕刻處理，以在被輸送到處理區域中之前提供與腔室部件和彼此的有限的相互作用。
噴頭225可包含上板214和下板216。板可彼此耦合以在板之間界定容積218。板的耦合可為提供通過上板和下板的第一流體通道219及通過下板216的第二流體通道221。所形成的通道可經配置以提供從容積218僅經由第二流體通道221通過下板216的流體通路，且第一流體通道219可與在板和第二流體通道221之間的容積218流體隔離。容積218可通過氣體分配組件225的側邊而可流體接近。
第 3 圖 是根據實施例的與處理腔室一起使用的噴頭325的底視圖。噴頭325可對應於第2A圖中所示的噴頭225。顯示第一流體通道219的視圖的通孔365可具有複數種形狀和配置，以便控制和影響前驅物通過噴頭225的流動。顯示第二流體通道221的視圖的小孔375可在噴頭的表面之上基本均勻地分配，甚至在通孔365之間，且可有助於在前驅物離開噴頭時提供比其他配置更均勻的前驅物混合。
第 4A-4C 圖 顯示了磁感應電漿系統400的一個實施例的示意性頂視平面圖，磁感應電漿系統400可使用或整合在以上所述的處理腔室200中。第4A圖顯示了在生成或點燃電漿之前的磁感應電漿系統400；第4B圖顯示了電漿點燃期間的磁感應電漿系統400；及第4C圖顯示了當電漿可藉由磁感應電漿系統400維持時的磁感應電漿系統400。參照第4A圖，磁感應電漿系統400可包括以環形剖面為特徵的電漿源或放電管410，及位於電漿源410周圍的一或多個磁性元件420a、420b、420c、420d。電漿源410可以環形形狀為特徵，且可以具有環形軸線1（在第4A圖中顯示為點）的基本環形形狀為特徵，環形軸線1在環形形狀的中心處且垂直於第4A圖所示的平面延伸。還如第4A圖所示，為了便於描述的附加的有用參考可包括垂直於環形軸線1的徑向方向2，表示從電漿源410的中心軸線徑向向外延伸的方向；及方位角方向3，表示圍繞環形軸線1的旋轉方向。環形延伸部或環形方向4可界定為電漿源410的延伸部或方向，沿著該延伸部或方向可在電漿源410內形成電漿電流（如下文將更詳細描述的）。
如第 4D-4F 圖 所示，分別示意性地顯示了在電漿點火之前、電漿點火期間和電漿維持期間的磁性元件420的側視圖。磁性元件420可各自形成封閉迴路。磁性元件420可界定中空中心422，電漿源410的一部分可穿過中空中心422而延伸穿過磁性元件420。磁性元件420可包括可界定封閉迴路的磁體424。磁體424可由鐵氧體或其他可磁化材料形成。還如第4D-4F圖所示，磁感應電漿系統400可進一步包括纏繞在每個磁性元件420的磁體424的至少一部分周圍的線圈430（第4A-4C圖中未顯示）。可向每個線圈430供應電能，用於在電漿源410內生成電漿。具體地，供應給線圈430的電能可在每個磁性元件420內側生成磁場，磁場繼而可感應出電場E ，如第4A圖和第4D圖所示。
電漿源410可由非導電材料或具有非常低或很小導電性的材料形成，諸如電介質材料，包括（但不限於）陶瓷、石英、藍寶石等。在一些實施例中，電漿源410可由導電材料形成，諸如金屬，包括（但不限於）鋁、不銹鋼等，且磁感應電漿系統400可進一步包括形成電漿源410的一部分或多個部分的一或多個介電部分或介電斷裂440。在任一種配置中，電漿源410可不形成封閉的導電體，且感應電場E 可增加到閾值，以點燃或電離可被供應到電漿源410中的氣體或氣體混合物（如第4B圖和第4E圖所示），以形成電漿。一旦電漿可被點燃，電離或帶電的電漿產物的至少一部分可在電漿源410內循環，形成封閉迴路電流450，如第4C圖和第4F圖所示。線圈430和電漿電流450可接著以類似於變壓器的初級線圈和次級線圈可如何操作的方式操作。由於可連續地向線圈430供應電能，所以可將所供應的電能傳遞到電漿電流450，並可維持穩定的電漿。
參照第4D圖，磁體424可包括外表面426和內表面428，每個外表面426和內表面428可包括正方形剖面。在一些實施例中，外表面426和內表面428可包括其他多邊形剖面、圓形或橢圓形剖面等。具有圓形或橢圓形剖面的磁體424可含有在磁體424內側產生的基本上所有磁通量，並限制或防止洩漏通量，從而提高磁感應電漿系統400的效率，而藉由線圈430產生的磁通量可能在具有多邊形剖面的磁體424的角落處逸出或洩漏。然而，與不形成封閉迴路的開放式磁體相比，形成封閉迴路的磁體424通常可為磁感應電漿系統400提供更高的效率，因為磁通量可能不形成封閉迴路並且可在不感應用以生成電漿的電場的情況下逃逸。
儘管未在第4A-4F圖中顯示，電漿源410可包括與磁性元件420的剖面形狀類似或不同的剖面形狀。在一些實施例中，電漿源410可包括內表面和外表面，內表面和外表面可包括正方形或其他多邊形剖面。在一些實施例中，電漿源410可包括內表面和外表面，內表面和外表面可包括圓形或橢圓形剖面，且電漿源410可形成為圓形管。
磁性元件420可在各種位置或方位角處圍繞電漿源410定位。第4A-4C圖顯示了磁感應電漿系統400可包括四個磁性元件420。磁感應電漿系統400可包括多於或少於四個磁性元件420，但是可包括至少一個磁性元件420。磁性元件420可沿著電漿源410的環形延伸部以彼此相等的距離定位，使得任何兩個相鄰的磁性元件420之間的方位角可為相同的。例如，在第4A-4C圖中所示的實施例中，磁感應電漿系統400可包括四個磁性元件420，且任何兩個相鄰的磁性元件420可以約90度的方位角或者約電漿源410的環形延伸部的四分之一的距離彼此分開地定位。
取決於磁性元件420的數量，磁感應電漿系統400可包括在任何兩個相鄰磁性元件420之間可大於或小於90度的方位角，及在任何兩個相鄰磁性元件420之間可大於或小於電漿源410的環形延伸部的四分之一的距離。儘管第4A-4C圖顯示了磁性元件420可以相等的距離或相等的方位角間隔開，但在一些實施例中，磁性元件420可以不相等的距離或不相等的方位角間隔開。換言之，沿著電漿源410的環形延伸部的兩個相鄰磁性元件420之間的距離或在兩個相鄰磁性元件420之間的方位角可與另外兩個相鄰磁性元件420之間的距離或方位角不同。然而，將磁性元件420以相等的距離或方位角定位可改善在電漿源410內所產生的電漿產物的均勻性。因此，在一些實施例中，不管所包括的磁性元件420的數量如何，磁性元件可等距離地圍繞電漿源410間隔開。
儘管第4A-4C圖中僅顯示了一個介電部分440，磁感應電漿系統400可包括一個以上的介電部分440。在一些實施例中，磁感應電漿系統400可包括與磁性元件420相同數量的介電部分440。多個介電部分440可沿著電漿源410的環形延伸部以相等距離或不等距離定位。在一些實施例中，磁感應電漿系統400可包括比磁性元件420更多的介電部分440。在第4A-4C圖所示的實施例中，磁性元件420的每一個可以與介電部分440不同的方位角定位。在一些實施例中，至少一個磁性元件420可以與介電部分440相同的方位角定位，或與介電部分440對準。在磁感應電漿系統400可包括相同數量的磁性元件420和介電部分440的實施例中，每個磁性元件420可與介電部分440對準。
第 5A 圖 示意性地顯示了磁感應電漿系統500的實施例的透視圖，磁感應電漿系統500可使用或整合在以上所述的處理腔室200中。磁感應電漿系統500可包括界定基本上環形形狀的電漿源510。儘管未在第5A圖中顯示，類似的參考（包括環形軸線、徑向方向，方位角方向和環形延伸部或如第4A圖中所示的方向）可用於描述第5A圖所示的實施例。與第4A-4C圖中所示的電漿源410（其可包括沿著環形延伸部的均勻或一致的寬度尺寸及平行於環形軸線所量測的均勻且一致的高度尺寸，其中寬度尺寸沿徑向方向量測）不同，電漿源510可包括沿著環形延伸部的變化的寬度尺寸及/或變化的高度尺寸。具體地，電漿源510可包括一或多個第一部分515，第一部分515可為或包括金屬部分；及一或多個第二部分540，第二部分540可為或可包括介電部分或介電斷裂。第一部分515和第二部分540可以交替的方式佈置，使得第一部分515可藉由第二部分540彼此電隔離或絕緣。第一部分515和第二部分540可包括彼此不同的寬度和高度。
如第5A圖所示，第一部分515可各自包括第一寬度尺寸，且第二部分540可各自包括可小於第一寬度尺寸的第二寬度尺寸。第一部分515可各自進一步包括第一高度尺寸，且第二部分540可各自進一步包括可小於第一高度尺寸的第二高度尺寸。因此，第二部分540可界定一或多個環形凹槽，環形凹槽的每一個可經配置以在環形凹槽中容納磁性元件520的至少一部分，如第 5B 圖 所示，第5B圖顯示了沿第5A圖的線5B-5B而觀察的第二部分540的剖視圖。每個第二部分540可進一步包括在每個第二部分540的相對端處的一對凸緣542a、542b（如第5A圖所示）。凸緣542可經配置以將每個第二部分540與兩個相鄰的第一部分515耦合。例如，第一部分515的每一個可在相對端處配置有向內唇緣或凸緣。第二部分540的凸緣542和第一部分515的向內唇緣或凸緣可經由螺栓、螺釘、膠水、黏著劑、焊接、釬焊和任何合適的接合或耦合機構彼此耦合。
如第5A圖和第5B圖所示，第二部分540可各自形成為圓柱形主體。磁性元件520也可各自形成為圓柱形主體，其可與第二部分540同心地定位。在一些實施例中，第二部分540及/或磁性元件520可形成為具有可為多邊形的剖面形狀。如上所論述，圓形或橢圓形磁性元件520可限制磁通洩漏，從而提高磁感應電漿系統500的效率。因此，在一些實施例中，磁性元件的特徵可在於橢圓形剖面。
第 5C 圖 顯示了沿第5A圖中的線5C-5C觀察的第一部分515的剖視圖。如第5C圖所示，第一部分515可各自包括矩形或正方形剖面。第一部分515可各自包括第一壁或內壁512、第二壁或外壁514、第三壁或上壁516及第四壁或下壁518。每個第一部分515的寬度尺寸可藉由在內壁512和外壁514的外表面之間的距離界定。每個第一部分515的高度尺寸可藉由在上壁516和下壁518的外表面之間的距離界定。
在一些實施例中，至少每個第一部分515的高度尺寸可經配置為大於或約為每個磁性元件520的外徑，使得當磁性元件520可定位在第二部分540周圍及至少部分地容納在由第二部分540界定的環形凹槽內時，磁性元件520可不在第一部分515的上壁516之上方或在第一部分515的下壁518之下方延伸。利用這種配置，當磁感應電漿系統500可整合在腔室系統200中時，第一部分515的上壁516和下壁518可提供支撐或承載表面，用於支撐其他腔室部件及/或磁感應電漿系統500，同時磁性元件520可不接觸或承載腔室系統200的相鄰或附近腔室部件的重量。此外，因為磁性元件520可不延伸超過上壁516和下壁518，磁感應電漿系統500的最上面和最下面的表面輪廓可分別由上壁516和下壁518基本上界定，上壁516和下壁518可基本上是平坦的。因為幾個部件（諸如面板217、離子抑制器223、噴頭225等）可能包括類板狀結構或平面表面，這種輪廓可改善磁感應電漿系統500與腔室系統200的相容性。
儘管未在第5A圖中顯示，第一部分515可包括形成在上壁516中的孔，用於將一或多種前驅物引入或流入到電漿源510中以在其中生成電漿。第一部分515可進一步包括形成在下壁518中的孔，用於釋放在電漿源510內生成的電漿產物的至少部分。在一些實施例中，第一部分515可不包括上壁516和下壁518。電漿源510可部分地由內壁512和外壁514形成，且部分地由腔室系統200的腔室部件的相鄰板或表面形成。
如可從第4A-4F圖和第5A-5C圖中所示的實施例的描述中可看出，於此使用的術語環形或環形形狀不限於沿著環形形狀的延伸部而具有均勻或一致的寬度及/或高度尺寸的環面或環形形狀。此外，在一些實施例中，環形形狀可包括沿著環形形狀的延伸部的一致或類似的剖面，諸如第4A-4F圖中所示的實施例，而在一些實施例中，環形形狀可包括沿著環形形狀的延伸部的變化的剖面，諸如第5A-5C圖中所示的實施例。此外，在一些實施例中，環形延伸部可界定基本上圓形的形狀，諸如第4A圖中所示的實施例的環形延伸部，而在一些實施例中，環形延伸部可界定多邊形狀，其可包括一或多個弧形和一或多個基本上平直的區段。例如，第5A-5C圖中所示的實施例的第一部分515可為或包括弧形延伸部，而第二部分540可為或包括基本上平直的延伸部。此外，在一些實施例中，電漿源可不包括弧形部分，且第一及/或第二部分都可為或包括基本上平直的延伸部。因此，電漿源可包括所有弧形部分、所有基本上平直的部分，或其組合。
第 6A 圖 顯示了示例性處理腔室系統600的選擇部件，處理腔室系統600可包括磁感應電漿系統610。處理腔室系統600可進一步包括氣體入口組件605和位於磁感應電漿系統610上游的面板617和位於磁感應電漿系統610下游的氣體分配部件615。處理腔室系統600可包括氣體分配部件615下游的附加部件，類似於參考第2A圖所述的彼等部件，諸如一或多個氣體分配部件、界定基板處理區域的各種部件、基板支撐件等，其未在第6A圖中顯示，但將容易理解為含括在包含所示部件的腔室內。
在膜蝕刻、沉積及/或其他半導體處理期間，一或多個前驅物可流過氣體入口組件605進到氣體供應區域658中。前驅物可包括可用於半導體處理的任何氣體或流體，包括（但不限於）處理氣體（process gas）、處理氣體（treatment gas）、載氣或用於半導體處理的任何合適的氣體或氣體混合物。面板617可促進前驅物從氣體供應區域658均勻分配到磁感應電漿系統610中。類似於上文參照第2A圖和第2B圖描述的面板217，面板617可包括孔659，孔659經配置成以基本上單向的方式引導流動，使得前驅物可流到磁感應電漿系統610中，但是可部分地或完全地防止前驅物在橫穿面板617之後回流到氣體供應區域658中。如第6A圖所示，磁感應電漿系統610可界定一或多個流動通道612，流動通道612可與面板617的僅部分或選擇區域（area）或區域（region）對準或相交。因此，在一些實施例中，孔659可僅在面板617與所界定的流動通道612相對應的選擇區域中形成，如第6A圖所示。
在一些實施例中，孔659可形成在選擇區域之外側，諸如橫跨或遍布面板617的中心區域或基本上整個表面區域。為了引導前驅物流到磁感應電漿系統610中，或為了限制或防止前驅物在磁感應電漿系統610外側的流動，處理腔室600可任選地包括中間板614。中間板614可位於面板下游與面板617以鄰接關係定位，以防止或阻止前驅物流過形成在選擇區域外側的孔659。中間板614可包括一或多個切口616，切口616可與由磁感應電漿系統610界定的流動通道612的開口對準，以允許前驅物流到磁感應電漿系統610中。儘管在一些實施例中可省略中間板614，但是在一些實施例中，中間板614可利用面板設計促進翻新操作，該等面板設計界定了橫跨部件的更均勻的孔分配。
儘管第6A圖中顯示了單個板，氣體分配部件615可包括一或多個板，一或多個板可控制在磁感應電漿系統610內側產生的電漿產物在下游進到基板處理區域中的分配。在一些實施例中，氣體分配部件615可包括離子抑制器（類似於上文參考第2圖描述的離子抑制器223），經配置以控制來自磁感應電漿系統610的活化氣體的通過。活化氣體可包括離子、自由基及/或中性物種，其也可統稱為電漿產物。類似於離子抑制器223，氣體分配部件615的離子抑制器可包括具有各種孔配置的多孔板，以控制或抑制帶電粒子或物種從磁感應電漿系統610中遷移，同時允許不帶電的中性或自由基物種通過離子抑制器。在一些實施例中，氣體分配部件615可進一步包括氣體分配組件或噴頭，類似於上文參照第2圖描述的氣體分配組件或雙通道噴頭225。氣體分配部件615的噴頭可允許在輸送到處理區域之前將各種前驅物分離到基板處理區域外側，同時在前驅物離開噴頭時促進前驅物的均勻混合。
儘管於此將離子抑制器和噴頭都描述為氣體分配部件615可包括的示例性部件，但在一些實施例中，氣體分配部件615可僅包括離子抑制器或噴頭的一個但不包括另一個，或可不包括離子抑制器或噴頭任一者。在一些實施例中，氣體分配部件615可包括其他合適的板或氣體分配控制機構。在一些實施例中，氣體分配部件615可不包括任何氣體分配控制機構。在一些實施例中，處理腔室系統600可完全不包括氣體分配部件615。換言之，在磁感應電漿系統610內側生成的電漿可直接分配到基板處理區域中，而不通過任何分配控制或過濾機構。
參照第 6B 圖 和第 6C 圖 ，將更詳細地描述磁感應電漿系統610。第6B圖顯示了磁感應電漿系統610的頂部透視圖，且第6C圖顯示了沿第6B圖中的線6C-6C觀察的磁感應電漿系統610的剖視圖。儘管未在第6B圖和第6C圖中顯示，類似的參考（包括環形軸線、徑向方向、方位角方向和環形延伸部或第4A圖中所示的方向）可用於描述第6B圖和第6C圖中所示的實施例。在第6B圖和第6C圖中所示的實施例和在第4A-5C圖中所示的實施例之間的一個區別可包括磁感應電漿系統610可包括兩個電漿源：第一電漿源620和第二電漿源630。在一些實施例中，第一電漿源620可為或包括先前描述的源的任何特徵，且可在第一電漿源620的內環形半徑內結合第二電漿源630。第一電漿源620和第二電漿源630可界定兩個環形形狀，兩個環形形狀具有共同的中心和共同的環形軸線。第二電漿源630可從第一電漿源620徑向向內定位。因此，第一電漿源620也可被稱為外電漿源620，而第二電漿源630也可被稱為內電漿源620。
參照第6B圖，第一和第二電漿源620、630的每一個可包括多個部分。第一電漿源620可包括以交替的方式佈置的一或多個第一部分622及一或多個第二部分624，第一部分622可為或包括導電部分，第二部分624可為或可包括介電部分或介電斷裂，使得第一部分622可藉由第二部分624彼此電隔離或絕緣。第一部分622和第二部分624可彼此流體地耦合以界定第一電漿循環通道。電漿產物的電離或帶電物種的至少一部分可在第一電漿循環通道內側循環，且可沿著第一電漿源620的環形延伸部通過至少第一部分622的一部分或多個部分及/或第二部分624的一部分或多個部分。
類似地，第二電漿源630可包括以交替的方式佈置的一或多個第三部分632及一或多個第四部分634，第三部分632可為或可包括導電部分，第四部分634可為或可包括介電部分或介電斷裂，使得第三部分632可藉由第四部分634彼此電隔離或絕緣。第三部分632和第四部分634可彼此流體耦合以界定第二電漿循環通道。在第二電漿源630內產生的電漿產物的電離或其他帶電物種的至少一部分可沿著第二電漿源630的環形延伸部通過至少第三部分632的一部分或多個部分及/或第四部分634的一部分或多個部分循環。
在第6B圖中所示的實施例中，第一電漿源620可包括四個第一部分622和四個第二部分624，而第二電漿源630可包括兩個第三部分632和兩個第四部分634。儘管顯示了四個第一部分622和四個第二部分624用於第一電漿源620，第一電漿源620可包括更多或更少的第一部分622及/或第二部分624。類似地，儘管顯示了用於第二電漿源630的兩個第三部分632和兩個第四部分634，第二電漿源630可包括更多或更少的第三部分632及/或第四部分634。
第一電漿源620的四個第二部分624可沿著第一電漿源620的環形延伸部彼此等距地定位，並且可以約90度的方位角彼此分開地定位。第二電漿源630的兩個第四部分634也可沿著第二電漿源630的環形延伸部彼此等距地定位，並且可以約180度的方位角彼此分開地定位。另外，第二電漿源630的第四部分634的每一個可定位在與第一電漿源620的第二部分624的每一個不同的方位角處。第二電漿源630的第四部分634可定位在與第一電漿源620的兩個附近的第二部分624的方位角相差約45度，或任何其它合適的角度的方位角處。將第一電漿源620的第二部分624和第二電漿源630的第四部分634定位在不同的方位角處可限制在第一電漿源620的第一部分622與第二電漿源630的第三部分632之間的干擾或電弧問​​題，特別是當在電漿點火期間可施加高電壓時。
沿著相應的第一和第二電漿源620、630的環形延伸部的每個第一部分622的延伸部和每個第三部分632的延伸部可以弧形形狀為特徵，而每個第二部分624的延伸部和每個第四部分634的延伸部可基本上是平直的。關於第一電漿源620，每個第一部分622的延伸部與每個第二部分624的延伸部的比率可大於或約1.5：1、2：1、2.5：1、3：1、3.5：1、4：1、4.5：1、5：1、6：1、7：1、8：1、9：1、10：1或更大。關於第二電漿源630，每個第三部分632的延伸部與每個第四部分634的延伸部的比率可大於或約1.5：1、2：1、2.5：1、3：1、3.5：1、4：1、5：1、6：1、7：1、8：1、9：1、10：1或更大。弧形第一部分622的延伸部與基本上平直的第二部分624的比率越大，或弧形第三部分632的延伸部與基本上平直的第四部分634的比率越大，則用於電漿電流的第一和第二電漿源620、630內的循環通道可越緊密地類似於圓形，以促進電漿電流的循環，且其中所產生的電漿可更穩定和均勻。然而，第二及/或第四部分624、634的延伸部可維持在至少閾值之上，使得可限制或消除在與第二或第四部分624、634的任一側耦合的第一及/或第三部分622、632之間的特別地由電漿點火期間的高電壓引起的潛在電弧故障或其他電弧問題。
類似於第5A圖和第5B圖中所示的電漿源510的第二部分540，第二及/或第四部分624、634的每一個可界定環形凹槽，用於在凹槽中接收磁性元件的至少一部分（第6B圖和第6C圖中未顯示）。如上所論述，當磁感應電漿系統610可整合在腔室系統600中時，環形凹槽可配置成使得當磁性元件可容納在環形凹槽中時，磁性元件可不接觸上腔室部件和下腔室部件。線圈可纏繞每個磁性元件的至少一部分。可將電能供應給線圈，用於在第一電漿源620和第二電漿源630的每一個內產生電漿。一旦在第一和第二電漿源620、630內產生電漿，電漿產物的電離或帶電物種的至少一部分可沿著第一和第二電漿源620、630的環形延伸部在感應電場下在第一和第二電漿通道內循環，同時產物的中性或自由基物種，以及電離或帶電物種的一部分可通過流動通道612流到基板處理區域中。
參照第6B圖並使用第一電漿源620的第一部分622和第二部分624作為實例，將更詳細地描述在第一部分622和第二部分624之間的耦合及在第三部分632和第四部分634之間的耦合。第二部分624的每一個可包括沿著第一電漿源620的環形延伸部定向的中空圓柱形主體640和配置在中空圓柱形主體640的相對端處的兩個凸緣642a、642b。第一部分622的每一個可包括弧形管狀主體644，平行於第一電漿源620的環形軸線而延伸。弧形管狀主體644可界定上文參照第6A圖描述的流動通道612的一或多個。流動通道612可包括基本一致的寬度尺寸。因此，用於前驅物流到第一電漿源620中的每個第一部分622的開口和用於釋放所產生的電漿產物的每個第一部分622的開口可包括與弧形管狀主體644基本相同的寬度尺寸，其中寬度尺寸沿著徑向方向量測。
第一部分622可包括弧形的第一或內壁646、弧形的第二或外壁648及連接內壁646和外壁648的端部的兩個側壁650（第6B圖中僅標記一個）。內壁646、外壁648和側壁650一起可形成管狀主體644。側壁650的每一個可包括穿過側壁650形成的孔652，孔652可與相鄰的第二部分624的圓柱形主體640的中空中心對準，使得可建立在第一部分622和第二部分624之間的流體連通。在一些實施例中，第一部分622的側壁650可包括凸緣或向外錐形部分654，以提供足夠的表面區域用於與第二部分624的凸緣642耦合。第一部分622的側壁650和第二部分624的凸緣642可經由螺栓、螺釘、膠水、黏著劑、焊接、釬焊和任何合適的接合或耦合機構而彼此耦合。為了防止氣體洩漏，每個側壁650的外表面可形成有環形凹槽656（如第6C圖所示），用於接收密封環（諸如O形環或任何其他合適的密封元件），當第一部分622和第二部分624可彼此耦合時，密封環可被按壓抵靠凸緣642，以在其間產生密封。
參照第6C圖，第一部分622的每一個可包括內寬度尺寸，該內寬度尺寸可被界定為在內壁646和外壁648的內表面之間沿徑向方向的距離。第二部分624的每一個可包括內徑，內徑可被界定為圓柱形主體640的內徑。每個第一部分622的內寬度尺寸可與每個第二部分624的內徑基本相同或相似，使得可促進第一電漿源620內的電漿產物的電離或帶電物種的流動，以維持其中產生的電漿。第一部分622的每一個可包括高度尺寸，高度尺寸可被界定為平行於環形軸線的第一部分622的延伸部。每個第一部分622的高度尺寸可類似於或大於每個第一部分622的內寬度尺寸或每個第二部分624的內徑。每個第一部分622的高度尺寸與其內寬度尺寸或與每個第二部分624的內徑的比率可大於或約1：1、1.5：1、2：1、2.5：1、3：1或更大。第二電漿源630的第三部分632的每一個可配置有與第一電漿源620的第一部分622的內寬度尺寸和高度尺寸相同或相似的內寬度尺寸和高度尺寸，且第二電漿源630的第四部分634可配置有與第一電漿源620的第二部分624的內徑相同或相似的內徑。因此，每個第三部分632的高度尺寸可類似於或大於第二電漿源630的每個第三部分632的內寬度尺寸或第二電漿源630的每個第四部分634的內徑。每個第三部分632的高度尺寸與其內寬度尺寸或與每個第四部分 634的內徑之比率可大於或約1：1、1.5：1、2：1、2.5：1、3：1或更大。
配置每個第一及/或第三部分622、632的高度尺寸大於其內寬度尺寸(並因此大於每個第二及/或第四部分624、634的內徑)不僅可在第二及/或第四部分624、634周圍產生用於在其中接收磁性元件的環形凹槽，但也可有助於維持沿第一和第二電漿源620、630的環形延伸部循環通過圓柱形主體640和第一和第三部分622、632的電漿電流。這可能部分是因為電漿電流(及驅動電流的電場)可維持在遠離上方的面板617的一定距離處，及遠離下方的氣體分配部件615的一定距離處，每個都可由金屬構成，並且可影響電漿電流或電場。
在一些實施例中，磁感應電漿系統610可進一步包括耦合到弧形管狀主體644的相對的(如，頂部和底部)邊緣的介電環構件660a、660b(參見第6B圖)。當磁感應電漿系統610可結合到腔室系統600時，介電環構件660a、660b可將第一和第三部分622、632與鄰近磁感應電漿系統610的其他金屬腔室部件電隔離或絕緣。當磁感應電漿系統610可結合到腔室系統600並且可接觸腔室的其他金屬部件時，介電環構件660a、660b可進一步使第一部分622彼此電隔離或絕緣，並且可使第三部分632彼此絕緣。耦合到弧形管狀主體644的頂部的介電環構件660a可界定第一平面支撐表面並且當磁感應電漿系統610可結合到腔室系統600中時，可經配置以在第一平面支撐表面處支撐氣體入口組件605或面板617的至少一個。耦合到弧形管狀主體644的底部的介電環構件660b可界定第二平面支撐表面，且磁感應電漿系統610可藉由氣體分配部件615在第二平面支撐表面處支撐。
進一步參照第6B圖和第6C圖，第一電漿源620可包括配置在第一部分622的外壁648處的一或多個監測窗口或孔662。儘管未顯示，但第二電漿源630也可包括配置在第三部分632的壁處的一或多個監測窗口或孔。光學、電學、化學或其他合適的探針或監測機構可耦合到監測窗口662，用於監測在第一和第二電漿源620、630內產生的電漿的性質。由監測機構收集的資料可用以建立封閉迴路或反饋控制，用於自動調節供應給線圈的功率、電流等，以產生具有所期望性質及/或所產生電漿產物的組成的穩定電漿。
第 7A-7C 圖 顯示了根據本技術的實施例的操作中的示例性電漿系統的示意圖。第7A圖示意性地顯示了結合有磁感應電漿系統710的處理腔室系統700的頂視圖，磁感應電漿系統710類似於上文參考第5圖所述者。第7B圖示意性地顯示了結合有磁感應電漿系統710b作為直接電漿源的處理腔室系統700b的剖視圖。第7C圖示意性地顯示了結合有磁感應電漿系統710作為遠端電漿源的處理腔室系統700c的剖視圖。
參照第7B圖，磁感應電漿系統710b可位於基板處理區域720之正上方，基板可由基座730支撐在基板處理區域720內。一或多個前驅物可經由氣體入口組件705流到磁感應電漿系統710b中。功率源715可與磁感應電漿系統710b耦合，用於向磁感應電漿系統710b供應電能，以從前驅物生成電漿。磁感應電漿系統710b可包括電漿源，電漿源可配置有開口底部，使得電漿產物（包括離子、自由基及/或中性物種）以及任何載氣可直接流到待處理的基板上。離開磁感應電漿系統710b的電漿產物可擴散到錐形容積中，使得當電漿產物可到達基座730時，電漿產物可擴散到待處理的基板的整個表面區域上。
取決於在磁感應電漿系統710b和基座730之間的距離、待處理的基板的大小以及其他因素，磁感應電漿系統710b可配置有適當的寬度尺寸，使得可確保待由電漿產物處理的基板的全覆蓋，且可最小化用於生成電漿產物的前驅物的浪費。如上所論述的，寬度尺寸可界定為在內壁和外壁的內表面之間的距離，在第7A圖中用W表示。在一些實施例中，寬度尺寸可大於或約處理腔室700的半徑（在第7A圖中用R表示）的10％。在一些實施例中，寬度尺寸可大於或約處理腔室700的半徑R的20％、30％、40％、50％、60％、70％、80％或更多。
參照第7C圖，磁感應電漿系統710c可作為遠端電漿源而整合到腔室系統700c中。腔室系統700c可包括離子抑制器740，離子抑制器740經配置以控制所生成的電漿產物的通過。類似於上文參考第2圖論述的離子抑制器223，離子抑制器740可包括具有各種孔配置的多孔板，以控制或抑制帶電粒子或物種從磁感應電漿系統710c中遷移，同時允許不帶電的中性或自由基物種通過離子抑制器740。腔室系統700可進一步包括氣體分配組件或噴頭750，類似於上文參照第2圖描述的氣體分配組件或雙通道噴頭225。噴頭750可促進中性或自由基物種均勻分配到處理區域720中和待處理的基板上。在一些實施例中，噴頭750可進一步允許在被輸送到處理區域之前將各種前驅物分離到基板處理區域720之外側，同時促進前驅物在它們離開噴頭750時的均勻混合。因為離子抑制器740及/或噴頭750可促進選擇的電漿產物均勻分配到處理區域720中並且到基板上，當磁感應電漿系統710c經配置為直接電漿源時，磁感應電漿系統710c可包括可類似於或小於磁感應電漿系統710b的寬度尺寸的寬度尺寸。在各種實施例中，磁感應電漿系統710c的寬度尺寸可大於或約處理腔室700的半徑R的20％、30％、40％、50％、60％、70％、80％或更多。
第 8A-8C 圖 顯示了根據本技術的實施例的操作中的示例性電漿系統的示意圖。第8A圖示意性地顯示了結合有磁感應電漿系統810的處理腔室系統800的頂視圖，磁感應電漿系統810類似於上文參照第6圖描述的磁感應電漿系統610。第8B圖示意性地顯示了結合有磁感應電漿系統810b作為直接電漿源的處理腔室系統800b的剖視圖。第8C圖示意性地顯示了結合有磁感應電漿系統810c作為遠端電漿源的處理腔室系統800c的剖視圖。
除了磁感應電漿系統810b，810c可各自包括兩個環形電漿源：內電漿源812和外電漿源814之外，處理腔室系統800b、800c的配置可分別類似於處理腔室系統700b、700c的配置。由內電漿源812b、812c所生成的電漿產物可流到待處理基板的圓形中心區域上，而由外電漿源814b、814c所生成的電漿產物可流到基板的環形或外側區域上，環形或外側區域圍繞中心區域的至少一個周邊部分並與該周邊部分重疊。
為了確保從內和外電漿源812、814釋放的電漿產物完全覆蓋基板，內和外電漿源812、814的寬度尺寸可各自大於或約處理腔室800的半徑的5％、10％、15％、20％、25％、30％、35％、40％、45％或更大。在第8C圖的實施例中，因為離子抑制器840及/或噴頭850可促進電漿產物均勻分配到基板上，所以內和外電漿源812c、814c的寬度尺寸可小於第8B圖的實施例的內和外電漿源812b、814b的寬度尺寸。儘管電漿源812、814可配置有更大的寬度尺寸，以確保藉由電漿產物完全覆蓋基板，但是寬度尺寸可保持在特定值，使得由內和外電漿源812、814內的電漿電流所生成的磁場之間的干擾可最小化。為了進一步限制這種干擾，還可維持在內和外電漿源812、814之間的足夠距離。在一些實施例中，內和外電漿源812、814可各自配置有在處理腔室800的半徑的約10％和約30％之間的寬度尺寸。在內和外電漿源812、814之間的距離可以維持在電漿源812、814的寬度尺寸的約50％或更多。儘管內和外電漿源812、814顯示為具有基本相似的寬度尺寸，但是內和外電漿源812、814可具有不類似或不同的寬度尺寸。
上述磁感應電漿系統的各種實施例可利用LLC諧振半橋電路驅動方案。傳統的電漿生成系統通常可利用全橋電路驅動方案。與用於電漿生成的傳統全橋電路相比，LLC諧振半橋電路通常可更可靠且成本有效。LLC諧振半橋電路可為於此所述的磁感應電漿系統產生更高的功率傳輸效率。與使用全橋電路驅動方案的傳統電漿生成系統相比，用於磁感應電漿系統的LLC諧振半橋電路驅動方案可能需要顯著更低的功率來點燃及/或維持電漿，同時產生類似​​的前驅物氣體解離。例如，如於此所述的磁感應電漿系統可能需要約1,000 W、800 W、600 W、400 W、200 W或更低的電漿點火功率，並且可能需要僅點火功率的1/2、1/3或更低的電漿維持功率。相反地，部分由於驅動電路上的能量損失，利用全橋電路驅動方案的電漿生成系統可能需要10,000 W或更多，以用於電漿點火及/或維持。
此外，利用全橋電路驅動方案的傳統電漿生成系統可允許有限的功率調節。利用LLC諧振半橋電路驅動方案的磁感應電漿系統可允許從0 W到約1,000 W或更高的功率調節。例如，可藉由調節驅動電壓、電流及/或頻率來調製功率。增加驅動電壓及/或電流可增加功率輸出，而降低驅動頻率可增加功率輸出。通常，較高的功率輸出可產生較高的前驅物氣體的解離速率。藉由調節功率輸出，可調製前驅物氣體的解離速率以實現所期望的電漿產物的組成。
此外，在磁感應電漿系統可包括內環形電漿源和外環形電漿源的實施例中，可向內環形電漿源和外環形電漿源供應不同水平的功率。例如，可向外環形電漿源供應相對較高的功率（諸如約300 W至約1,000 W），而可向內環形電漿源供應相對較低的功率（諸如約100 W至約600 W）。儘管可向內環形電漿源和外環形電漿源供應不同水平的功率，但是內環形電漿源和外環形電漿源的驅動頻率可匹配，使得內環形電漿源和外環形電漿源中或附近的感應電場可不彼此抵消。
於此所述的磁感應電漿系統可以從約50 kHz至約500 MHz的寬頻率範圍操作以產生電漿。然而，較低的頻率可產生較高的功率傳輸效率，因為高頻率可能導致磁性元件中的功率損耗。在一些實施例中，LLC諧振半橋電路可以在約100 kHz和約20 MHz之間、在約200 kHz和約10 MHz之間、在約400 kHz和約1 MHz之間或任何合適範圍的頻率下向複數個線圈供應電流。磁感應電漿系統也可在非常寬的壓力範圍下操作。環形電漿源內的操作壓力可維持在約1 mTorr至約500 Torr之間，或甚至更高的壓力。前驅物可以各種流速流到電漿源中，使得電漿源內的壓力可維持在約1 mTorr和約500 Torr之間，或約10 mTorr和約300 Torr之間，或約15 mTorr和約200 Torr之間，或任何合適的範圍。可藉由於此所述的磁感應電漿系統在各種功率水平、頻率範圍及/或壓力範圍下生成和維持非常穩定的電漿。這可能部分是因為一旦電漿可能被點燃，線圈和電漿電流可以類似於變壓器的初級和次級線圈的方式操作，以維持所產生的電漿在穩定狀態下。
在前面的描述中，出於解釋的目的，已經闡述了許多細節以便提供對本技術的各種實施例的理解。然而，對於熟悉本領域者顯而易見的是，某些實施例可在沒有這些細節的一些，或具有附加細節的情況下實踐。
已經揭露了若干實施例，熟悉本領域者將認識到在不背離實施例的精神的情況下，可使用各種修改、替代構造和等同物。另外，沒有描述許多眾所周知的處理和元件，以避免不必要地模糊本技術。因此，以上描述不應被視為限制本技術的範圍。另外，方法或處理可被描述為順序的或步驟的，但是應該理解操作可同時執行，或以與列出的順序不同的順序執行。
在提供值的範圍的情況下，應當理解除非上下文另有明確規定，否則還具體揭露了在彼範圍的上限和下限之間的每個中間值，到下限單位的最小部分。在所提及範圍中的任何提及值或未提及的中間值與彼所提及範圍中的任何其他提及或中間值之間的任何較窄範圍都包括在內。這些較小範圍的上限和下限可獨立地包括或排除在該範圍中，且包括在較小範圍中的任一個，兩個皆無或兩個限制的每個範圍也包括在技術內，受到在所提及範圍中任何特別排除的限制。若提及的範圍包括一個或兩個限制，則還包括排除這些所包括限制的一個或兩個的範圍。
如於此和附隨的申請專利範圍中所使用的，單數形式「一（a）」，「一（an）」和「該（the）」包括複數參考，除非上下文另有明確說明。因此，例如，提及「一前驅物」包括複數個這樣的前驅物，且提及「該層」包括提及一或多個層及熟悉該技術者已知的其等同物等等。
此外，當在這份說明書和以下的申請專利範圍中使用時，詞語「包含（comprise(s)）」、「包含（comprising）」、「含有（contain(s)）」、「含有（containing）」、「包括（include(s)）」和「包括（including）」意欲指定所提及的特徵、整數、部件或操作的存在，但它們不排除存在或添加一或多個其他特徵、整數、部件、操作、動作或群組。
1‧‧‧環形軸線 2‧‧‧徑向方向 3‧‧‧方位角方向 4‧‧‧環形方向 100‧‧‧系統 102‧‧‧前開式晶圓傳送盒 104‧‧‧機械臂 106‧‧‧保持區域 108a‧‧‧腔室 108b‧‧‧腔室 108c‧‧‧腔室 108d‧‧‧腔室 108e‧‧‧腔室 108f‧‧‧腔室 109a‧‧‧串聯部分 109b‧‧‧串聯部分 109c‧‧‧串聯部分 110‧‧‧第二機械臂 200‧‧‧腔室系統/腔室部分/腔室 201‧‧‧遠端電漿系統/RPS 203‧‧‧冷卻板 205‧‧‧入口組件/入口 210‧‧‧流體供應系統 214‧‧‧上板 215‧‧‧第一電漿區域/腔室電漿區域/電漿激發區域 216‧‧‧下板/板 217‧‧‧面板 218‧‧‧容積 219‧‧‧第一流體通道 220‧‧‧絕緣環 221‧‧‧第二流體通道 223‧‧‧離子抑制器 225‧‧‧噴頭/氣體分配組件 233‧‧‧處理區域 240‧‧‧功率供應器 253‧‧‧詳細視圖 255‧‧‧基板 258‧‧‧供應區域 259‧‧‧孔 265‧‧‧基板支撐件/基座 325‧‧‧噴頭 365‧‧‧通孔 375‧‧‧小孔 400‧‧‧磁感應電漿系統 410‧‧‧電漿源/放電管 420a‧‧‧磁性元件 420b‧‧‧磁性元件 420c‧‧‧磁性元件 420d‧‧‧磁性元件 422‧‧‧中空中心 424‧‧‧磁體 426‧‧‧外表面 428‧‧‧內表面 430‧‧‧線圈 440‧‧‧介電部分/介電斷裂 450‧‧‧電流 500‧‧‧磁感應電漿系統 510‧‧‧電漿源 512‧‧‧內壁 514‧‧‧外壁 515‧‧‧第一部分 516‧‧‧上壁 518‧‧‧下壁 520‧‧‧磁性元件 540‧‧‧第二部分 542a‧‧‧凸緣 542b‧‧‧凸緣 600‧‧‧腔室系統/腔室 605‧‧‧氣體入口組件 610‧‧‧磁感應電漿系統 612‧‧‧流動通道 614‧‧‧中間板/板 615‧‧‧氣體分配部件 616‧‧‧切口 617‧‧‧面板 620‧‧‧第一電漿源/外電漿源 622‧‧‧第一部分 624‧‧‧第二部分 630‧‧‧第二電漿源/內電漿源 632‧‧‧第三部分 634‧‧‧第四部分 640‧‧‧圓柱形主體 642a‧‧‧凸緣 642b‧‧‧凸緣 644‧‧‧管狀主體 646‧‧‧內壁 648‧‧‧外壁 650‧‧‧側壁 652‧‧‧孔 654‧‧‧向外錐形部分 656‧‧‧環形凹槽 658‧‧‧氣體供應區域 659‧‧‧孔 660a‧‧‧介電環構件 660b‧‧‧介電環構件 662‧‧‧監測窗口/孔 700‧‧‧腔室系統/處理腔室 700b‧‧‧腔室系統 700c‧‧‧腔室系統 705‧‧‧氣體入口組件 710‧‧‧磁感應電漿系統 710b‧‧‧磁感應電漿系統 710c‧‧‧磁感應電漿系統 715‧‧‧功率源 720‧‧‧處理區域 730‧‧‧基座 740‧‧‧離子抑制器 750‧‧‧噴頭 800‧‧‧處理腔室系統/處理腔室 800b‧‧‧處理腔室系統 800c‧‧‧處理腔室系統 810‧‧‧磁感應電漿系統 810b‧‧‧磁感應電漿系統 810c‧‧‧磁感應電漿系統 812b‧‧‧電漿源 812c‧‧‧電漿源 814b‧‧‧電漿源 814c‧‧‧電漿源 840‧‧‧離子抑制器 850‧‧‧噴頭
藉由參考說明書的剩餘部分和附圖，可實現對所揭露技術的本質和優點的進一步理解。
第1圖顯示了根據本技術的實施例的示例性處理系統的一個實施例的頂視平面圖。
第2A圖顯示了根據本技術的實施例的示例性處理腔室的示意性剖視圖。
第2B圖顯示了根據本技術的實施例的第2A圖中所示的處理腔室的一部分的詳細視圖。
第3圖顯示了根據本技術的實施例的示例性噴頭配置的示意圖。
第4A-4F圖顯示了根據本技術的實施例的示例性電漿系統的示意圖。
第5A-5C圖顯示了根據本技術的實施例的示例性電漿系統的示意圖。
第6A-6C圖顯示了根據本技術的實施例的示例性電漿系統的示意圖。
第7A-7C圖顯示了根據本技術的實施例的操作中的示例性電漿系統的示意圖。
第8A-8C圖顯示了根據本技術的實施例的操作中的示例性電漿系統的示意圖。
包括若干圖式作為示意圖。應理解圖式僅用於說明目的，且除非特別說明具有比例，否則不應視為具有比例。另外，作為示意圖，提供圖式以幫助理解，且可能不包括與真實表示相比的所有態樣或資訊，且可能包括用於說明目的的誇大材料。
在附隨的圖式中，類似的部件及/或特徵可具有相同的元件符號。此外，可藉由在元件符號之後用區分相似部件的字母來區分相同類型的各種部件。若在說明書中僅使用第一元件符號，則該描述適用於具有相同第一元件符號的任何一個類似部件，而與該字母無關。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
610:磁感應電漿系統
620:第一電漿源/外電漿源
622:第一部分
624:第二部分
630:第二電漿源/內電漿源
632:第三部分
634:第四部分
640:圓柱形主體
642a:凸緣
642b:凸緣
644:管狀主體
646:內壁
648:外壁
650:側壁
652:孔
654:向外錐形部分
660a:介電環構件
660b:介電環構件
662:監測窗口/孔

Claims (20)

  1. 一種磁感應電漿系統，包含：一第一電漿源，包括彼此流體地耦合的複數個第一部分和複數個第二部分，使得在該第一電漿源內產生的電漿產物的至少一部分循環通過該第一電漿源內的該複數個第一部分的至少一個和該複數個第二部分的至少一個，其中該複數個第二部分的每一個包含一電介質材料，其中該複數個第一部分和該複數個第二部分以一交替的方式佈置，使得該複數個第一部分至少部分地藉由該複數個第二部分彼此電絕緣；複數個磁性元件，其中該複數個磁性元件的每一個界定一封閉迴路並且圍繞該複數個第二部分的一個定位；及其中該第一電漿源界定一第一環形形狀，該第一環形形狀具有一第一環形延伸部和垂直於第一環形延伸部的一第一環形軸線，其中該複數個第一部分的每一個包括平行於該第一環形軸線的一第一高度尺寸，其中該複數個第二部分的每一個包括平行於該第一環形軸線的一第二高度尺寸，其中該第一高度尺寸大於該第二高度尺寸，使得該複數個第二部分界定複數個凹槽，該複數個凹槽的每一個經配置以接收該複數個磁性元件的一個，使得該磁性元件不延伸超過該第一部 分的一上壁與一下壁。
  2. 如請求項1所述之磁感應電漿系統，其中該複數個第一部分的每一個包含一第一開口和一第二開口，其中該複數個第一部分的每一個以及對應的該第一開口和該第二開口界定平行於該第一環形軸線的一流動通道，使得用於在該第一電漿源內產生該等電漿產物的一前驅物通過該第一開口流到每個第一部分中，且所產生的該等電漿產物的至少一部分通過該第二開口流出每個第一部分。
  3. 如請求項2所述之磁感應電漿系統，進一步包含位於該第一開口之上方的複數個第一介電環構件和位於該第二開口之下方的複數個第二介電環構件，使得當該磁感應電漿系統整合到一半導體處理腔室中並沿著該第一環形軸線定位在該半導體處理腔室的金屬部件之間時，該複數個第一部分彼此電絕緣。
  4. 如請求項3所述之磁感應電漿系統，其中該半導體處理腔室包含一氣體入口組件和一氣體分配組件，其中該氣體入口組件位於該磁感應電漿系統的上游，其中該氣體分配組件位於該磁感應電漿系統的下游，其中該複數個第一介電環構件界定一第一平面支撐表面且經配置以支撐該氣體入口組件，且其中該複數個第二介電環構件界定一第二平面支撐表面且經配 置以由該氣體分配組件支撐。
  5. 如請求項1所述之磁感應電漿系統，其中該複數個第一部分的每一個包括一弧形管狀主體。
  6. 如請求項1所述之磁感應電漿系統，其中該複數個第二部分的每一個包括一對凸緣，該對凸緣配置在每個第二部分的兩個相對端處並經配置以將每個第二部分與兩個相鄰的第一部分耦合。
  7. 如請求項1所述之磁感應電漿系統，其中該複數個第一部分的每一個包括沿著該第一環形延伸部的一第一延伸部，其中該複數個第二部分的每一個包括沿著該第一環形延伸部的一第二延伸部，該第一延伸部分與該第二延伸部的一比率在約10：1和約2：1之間，使得促進該第一電漿源內的電漿產物的至少一部分的循環。
  8. 如請求項1所述之磁感應電漿系統，進一步包含：一第二電漿源，界定一第二環形形狀，該第二環形形狀具有一第二環形延伸部和垂直於該第二環形延伸部的一第二環形軸線，該第二環形軸線與該第一環形軸線對準，其中該第二電漿源從該第一電漿源徑向向內定位，該第二電漿源包含一第三部分和一第四部分，該第四部分包含一電介質材料；及 至少一個磁性元件，界定一封閉迴路並圍繞該該第四部分而定位。
  9. 如請求項8所述之磁感應電漿系統，其中該第四部分的該至少一個磁性元件定位在與該第二部分的該複數個磁性元件的每一個的一方位角不同的一方位角處，使得由該第二部分的該複數個磁性元件的每一個所產生的一電場和由該第四部分的該至少一個磁性元件所產生的一電場之間的干涉減小。
  10. 如請求項8所述之磁感應電漿系統，其中該第一電漿源和該第二電漿源經配置以使得離開該第一電漿源的該等電漿產物擴散到一基板的一第一區域上，其中該第一區域界定一基本上環形的形狀，其中離開該第二電漿源的該等電漿產物擴散到該基板的一第二區域上，其中該第二區域界定一基本上圓形的形狀，且該第一區域和該第二區域重疊。
  11. 如請求項8所述之磁感應電漿系統，進一步包含：複數個電耦合的第一線圈，各自圍繞該第二部分的該複數個磁性元件的每一個的至少一部分配置；及一第二線圈，圍繞該第四部份的該至少一個磁性元件的至少一部分配置，其中該磁感應電漿系統由一LLC諧振半橋電路驅動，其中： 該LLC諧振半橋電路經配置成以一頻率向該複數個電耦合的第一線圈供應一第一電流，該頻率與該LLC諧振半橋電路經配置以向該第二線圈供應一第二電流的一頻率匹配。
  12. 如請求項11所述之磁感應電漿系統，其中該LLC諧振半橋電路經配置成以在約100kHz和約20MHz之間的一頻率下供應該第一電流和該第二電流。
  13. 如請求項11所述之磁感應電漿系統，其中該LLC諧振半橋電路經配置以向該複數個電耦合的第一線圈供應一第一功率並向該第二線圈供應一第二功率，該第一功率大於該第二功率。
  14. 一種產生電漿產物的方法，包含以下步驟：使一前驅物流到一磁感應電漿系統中；及從該前驅物形成一電漿以產生電漿產物，其中該磁感應電漿系統包含：一電漿源，界定一第一環形形狀，該第一環形形狀具有一第一環形延伸部和垂直於該第一環形延伸部的一第一環形軸線，該電漿源包含沿著該第一環形延伸部彼此流體地耦合的複數個第一部分和複數個第二部分，使得該等電漿產物的一第一部分循環通過基 本上沿著該電漿源內的該第一環形延伸部的該複數個第一部分的至少一個和該複數個第二部分的至少一個，其中複數個第二部分的每一個包含一電介質材料，且其中該複數個第一部分和該複數個第二部分以一交替方式佈置，使得該複數個第一部分至少部分地藉由該複數個第二部分彼此電絕緣；及複數個磁性元件，其中該複數個磁性元件的每一個界定一封閉迴路且圍繞該複數個第二部分的一個定位，其中：該複數個第一部分的每一個包括平行於該第一環形軸線的一第一高度尺寸，其中該複數個第二部分的每一個包括平行於該第一環形軸線的一第二高度尺寸，其中該第一高度尺寸大於該第二高度尺寸，使得該複數個第二部分界定複數個凹槽，該複數個凹槽的每一個經配置以接收該複數個磁性元件的一個，使得該磁性元件不延伸超過該第一部分的一上壁與一下壁。
  15. 如請求項14所述之產生電漿產物的方法，進一步包含將該電漿源內的一壓力維持在約1mTorr和約500Torr之間。
  16. 如請求項14所述之產生電漿產物的方法，其中該電漿源進一步包含複數個電耦合線圈，各自圍繞該複數個磁性元件的每一個的至少一部分配置，該 方法進一步包含藉由一LLC諧振半橋電路以在約100kHz和約20MHz之間的一頻率向該複數個電耦合線圈供應一電流。
  17. 如請求項16所述之產生電漿產物的方法，進一步包含藉由該LLC諧振半橋電路向該複數個電耦合線圈供應在約100W和約1,000W之間的一功率，以從該電漿源內的該前驅物產生產物。
  18. 一種半導體處理腔室，包含：一磁感應電漿系統，其中該磁感應電漿系統包含：一第一電漿源，具有一第一環形形狀，該第一電漿源界定該第一環形形狀的一第一環形凹槽；及一磁性元件，形成一封閉迴路並圍繞該第一電漿源的一部分定位，該磁性元件容納在該第一環形凹槽內，使得該磁性元件不延伸超過該第一環形形狀的一上壁與一下壁，其中：該第一電漿源包括用於在該第一電漿源內從該第一電漿源產生電漿產物的一前驅物的一第一入口和用於所產生的該等電漿產物的一第一出口，其中該第一入口、該第一出口和該第一電漿源具有沿著該第一環形形狀的一徑向方向量測的一共同寬度尺寸。
  19. 如請求項18所述之半導體處理腔室，其中 該磁感應電漿系統進一步包含：一第二電漿源，具有一第二環形形狀，該第二電漿源和該第一電漿源具有一共同環形軸線，該第二電漿源從該第一電漿源徑向向內定位，該第二電漿源界定該第二環形性狀的一第二環形凹槽；及一磁性元件，形成一封閉迴路並圍繞該第二電漿源的一部分定位，該磁性元件容納在該第二環形凹槽內，使得該磁性元件不延伸超過該第二環形形狀的一上壁與一下壁，其中：該第二電漿源包括用於在該第二電漿源內從該第二電漿源產生電漿產物的該前驅物的一第二入口和用於所產生的該等電漿產物的一第二出口，其中該第二入口、該第二出口和該第二電漿源具有沿著該第二環形形狀的一徑向方向所量測的一共同寬度尺寸。
  20. 如請求項19所述之半導體處理腔室，其中該第一環形凹槽內的該磁性元件以一第一方位角定位，且該第二環形凹槽內的該磁性元件以與該第一方位角不同的一第二方位角定位。
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