CN111886670A - 用于半导体处理及设备的磁感应等离子体源 - Google Patents

用于半导体处理及设备的磁感应等离子体源 Download PDF

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CN111886670A
CN111886670A CN201980019723.7A CN201980019723A CN111886670A CN 111886670 A CN111886670 A CN 111886670A CN 201980019723 A CN201980019723 A CN 201980019723A CN 111886670 A CN111886670 A CN 111886670A
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plasma
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CN111886670B (zh
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T·S·周
S·郑
J·金
小林悟
K·D·沙茨
S·朴
D·卢博米尔斯基
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Abstract

提供了用于产生等离子体产物的示例性磁感应等离子体系统。磁感应等离子体系统可包括第一等离子体源，第一等离子体源包括多个第一部分和多个第二部分，多个第一部分和多个第二部分以交替的方式布置且彼此流体地耦合，使得在第一等离子体源内产生的等离子体产物的至少一部分可循环通过第一等离子体源内的多个第一部分的至少一个和第一等离子体源内的多个第二部分的至少一个。多个第二部分的每一个可包括电介质材料。系统可进一步包括多个第一磁性元件，多个第一磁性元件的每一个可限定封闭回路。多个第二部分的每一个可限定多个凹槽，多个凹槽用于在其中接收多个第一磁性元件的一个。

Description

用于半导体处理及设备的磁感应等离子体源
相关申请的交叉引用
本申请要求于2018年3月1日提交的美国临时申请No.15/909,812的权益，该临时申请出于全部目的通过引用以其全文并入此处。
技术领域
本技术关于半导体处理和设备。更具体地，本技术关于用于半导体处理和设备的磁感应等离子体源。
背景技术
通过在基板表面上产生复杂图案化的材料层的处理使集成电路成为可能。在基板上产生图案化材料需要用于移除暴露材料的受控方法。化学蚀刻用于各种目的，包括将光阻中的图案转移到下面的层、减薄层，或已经存在于表面上的特征的减薄横向尺寸。通常期望具有比另一种材料更快地蚀刻一种材料的蚀刻处理，从而促进(例如)图案转移处理。据说这种蚀刻处理对第一种材料具有选择性。由于材料、电路和处理的多样性，已经开发出具有对各种材料的选择性的蚀刻处理。
基于处理中使用的材料，蚀刻处理可被称为湿式或干式。湿式HF蚀刻优先移除氧化硅而不是其他电介质和材料。然而，湿式处理可能难以穿透某些受限制的沟槽，且有时亦可能使剩余材料变形。在基板处理区域内形成的局部等离子体中产生的干式蚀刻可穿透更受限制的沟槽并表现出更少的精细剩余结构的变形。然而，局部等离子体可能在它们放电时通过电弧的产生而损坏基板。
因此，存在有可用以生产高质量装置和结构的改进系统和方法的需求。本技术解决了这些和其他需求。
发明内容
用于产生等离子体产物的示例性系统可包括磁感应等离子体系统。磁感应等离子体系统可包括第一等离子体源。第一等离子体源可包括一或多个第一部分和一或多个第二部分。一或多个第一部分和一或多个第二部分可彼此流体地耦合，使得在第一等离子体源内产生的等离子体产物的至少一部分可循环通过一或多个第一部分的至少一个。在第二等离子体源内产生的等离子体产物的至少一部分也可循环通过第一等离子体源内的一或多个第二部分的至少一个。一或多个第二部分的每一个可包括电介质材料。一或多个第一部分和一或多个第二部分可以交替的方式布置，使得一或多个第一部分可至少部分地通过一或多个第二部分彼此电绝缘。
在一些实施例中，磁等离子体感应系统可进一步包括一或多个第一磁性元件。一或多个第一磁性元件的每一个可限定封闭回路并可围绕一或多个第二部分的一个而定位。第一等离子体源可限定第一环形形状。第一环形形状可包括第一环形延伸部和垂直于第一环形延伸部的第一环形轴线。一或多个第一部分的每一个可包括平行于第一环形轴线的第一尺寸。一或多个第二部分的每一个可包括平行于第一环形轴线的第二尺寸。第一尺寸可大于第二尺寸，使得一或多个第二部分可限定一或多个凹槽。一或多个凹槽的每一个可经配置以接收一或多个第一磁性元件的一个的至少一部分。
在一些实施例中，一或多个第一部分的每一个可包括第一开口和第二开口。一或多个第一部分的每一个以及对应的第一和第二开口可限定平行于第一环形轴线的流动通道，使得用于在第一等离子体源内产生等离子体产物的前驱物可通过第一开口而流到每个第一部分中，且所产生的等离子体产物的至少一部分可通过第二开口而流出每个第一部分。
在一些实施例中，磁感应等离子体系统可进一步包括一或多个第一介电环构件和一或多个第二介电环构件。一或多个第一介电环构件可定位在第一开口上方，且一或多个第二介电环构件可定位在第二开口下方，使得当磁感应等离子体系统可整合到半导体处理腔室中且可沿着第一环形轴线定位在半导体处理腔室的金属部件之间时，一或多个第一部分可彼此电绝缘。
在一些实施例中，半导体处理腔室可包括气体入口组件和气体分配组件。气体入口组件可位于磁感应等离子体系统的上游。气体分配组件可位于磁感应等离子体系统的下游。一或多个第一介电环构件可限定第一平面支撑表面并可经配置以支撑气体入口组件。一或多个第二介电环构件可限定第二平面支撑表面且可经配置以通过气体分配组件支撑。
在一些实施例中，一或多个第一部分的每一个可包括弧形管状主体。在一些实施例中，一或多个第二部分的每一个可包括一对凸缘，该对凸缘配置在每个第二部分的两个相对端处且可经配置以将每个第二部分与两个相邻的第一部分耦合。在一些实施例中，一或多个第一部分的每一个可包括沿着第一环形延伸部的第一延伸部。一或多个第二部分的每一个可包括沿着第一环形延伸部的第二延伸部。第一延伸部与第二延伸部的比率可在约10：1和约2：1之间，使得可促进第一等离子体源内的等离子体产物的至少一部分的循环。
在一些实施例中，磁感应等离子体系统可进一步包括第二等离子体源。第二等离子体源可限定第二环形形状。第二环形形状可包括第二环形延伸部和垂直于第二环形延伸部的第二环形轴线。第二环形轴线可与第一环形轴线对准。第二等离子体源可从第一等离子体源径向向内定位。第二等离子体源可包括第三部分和第四部分。第三部分或第四部分的至少一个可包括电介质材料。第二等离子体源可进一步包括至少一个第二磁性元件。至少一个第二磁性元件可限定封闭回路并可定位在第三部分或第四部分的至少一个周围。在一些实施例中，至少一个第二磁性元件可定位在与一或多个第一磁性元件的每一个的方位角不同的方位角处，使得由一或多个第一磁性元件的每一个所产生的电场和由至少一个第二磁性元件所产生的电场之间的干涉可减少。
在一些实施例中，第一等离子体源和第二等离子体源可配置成使得离开第一等离子体源的等离子体产物可扩散到基板的第一区域上，且离开第二等离子体源的等离子体产物可扩散到基板的第二区域上。第一区域可限定基本上环形的形状。第二区域可限定基本上圆形的形状。第一区域和第二区域可重叠。
在一些实施例中，磁感应等离子体系统可进一步包括一或多个电耦合的第一线圈和第二线圈。一或多个电耦合的第一线圈的每一个可围绕一或多个第一磁性元件的每一个的至少一部分而配置。第二线圈可围绕至少一个第二磁性元件的至少一部分而配置。磁感应等离子体系统可通过LLC谐振半桥电路而驱动。LLC谐振半桥电路可配置成以第一频率向一或多个电耦合的第一线圈供应第一电流。LLC谐振半桥电路可配置成以第二频率向第二线圈供应第二电流。第一频率可匹配第二频率。在一些实施例中，LLC谐振半桥电路可经配置以在约100kHz和约20MHz之间的频率供应第一电流和第二电流。在一些实施例中，LLC谐振半桥电路可经配置以向一或多个电耦合的第一线圈供应第一功率并向第二线圈供应第二功率。第一功率可大于第二功率。
本技术还可包括产生等离子体产物的方法。方法可包括使前驱物流到等离子体源中。方法可进一步包括由前驱物形成等离子体以产生等离子体产物。等离子体源可限定第一环形形状。第一环形形状可包括第一环形延伸部和垂直于第一环形延伸部的第一环形轴线。等离子体源可包括一或多个第一部分和一或多个第二部分。一或多个第一部分和一或多个第二部分可沿着第一环形延伸部彼此流体地耦合，使得等离子体产物的第一部分可基本上沿着等离子体源内的第一环形延伸部通过一或多个第一部分的至少一个而循环。等离子体产物的第一部分可基本上沿着等离子体源内的第一环形延伸部通过一或多个第二部分的至少一个而进一步循环。一或多个第二部分的每一个可包括电介质材料。一或多个第一部分和一或多个第二部分可以交替的方式布置，使得一或多个第一部分可至少部分地通过一或多个第二部分而彼此电绝缘。
在一些实施例中，等离子体源可进一步包括一或多个第一磁性元件。一或多个第一磁性元件的每一个可限定封闭回路并可围绕一或多个第二部分的一个而定位。一或多个第一部分的每一个可包括平行于第一环形轴线的第一尺寸。一或多个第二部分的每一个可包括平行于第一环形轴线的第二尺寸。第一尺寸可大于第二尺寸，使得一或多个第二部分可限定一或多个凹槽。一或多个凹槽的每一个可经配置以接收一或多个第一磁性元件的一个的至少一部分。
在一些实施例中，用于产生等离子体产物的方法可进一步包括将等离子体源内的压力维持在约1mTorr至约500Torr之间。在一些实施例中，等离子体源可进一步包括一或多个电耦合线圈。一或多个电耦合线圈的每一个可围绕一或多个第一磁性元件的每一个的至少一部分而配置。在一些实施例中，方法可进一步包括通过LLC谐振半桥电路以在约100kHz和约20MHz之间的频率向一或多个电耦合线圈供应电流。在一些实施例中，方法可进一步包括通过LLC谐振半桥电路向一或多个电耦合线圈供应在约100W和约1,000W之间的功率，以从等离子体源内的前驱物产生产物。
本技术还可包括一种包括磁感应等离子体系统的半导体处理腔室。磁感应等离子体系统可包括具有第一环形形状的第一等离子体源。第一等离子体源可限定第一环形形状的第一环形凹槽。磁感应等离子体系统可进一步包括第一磁性元件。第一磁性元件可形成封闭回路并可定位在第一等离子体源的一部分周围。第一磁性元件的至少一部分可被接收在第一环形凹槽内。在一些实施例中，第一等离子体源可包括用于前驱物的第一入口，该前驱物用于在第一等离子体源内从前驱物产生等离子体产物。第一等离子体源可进一步包括用于所产生的等离子体产物的第一出口。第一入口、第一出口和第一等离子体源可包括沿着第一环形形状的径向而测量的共同宽度尺寸。
在一些实施例中，磁感应等离子体系统可进一步包括具有第二环形形状的第二等离子体源。第二等离子体源和第一等离子体源可具有共同的环形轴线。第二等离子体源可从第一等离子体源径向向内定位。第二等离子体源可限定第二环形形状的第二环形凹槽。磁感应等离子体系统可进一步包括第二磁性元件。第二磁性元件可形成封闭回路并可定位在第二等离子体源的一部分周围。第二磁性元件的至少一部分可被接收在第二环形凹槽内。第二等离子体源可包括用于前驱物的第二入口及用于所产生的等离子体产物的第二出口，该前驱物用于在第二等离子体源内从前驱物产生等离子体产物。第二入口、第二出口和第二等离子体源可具有沿着第二环形形状的径向而测量的共同宽度尺寸。第一磁性元件可以第一方位角定位。第二磁性元件可以第二方位角定位。第一方位角可与第二方位角不同。
与传统系统和技术相比，这种技术可提供许多益处。例如，于此描述的磁感应等离子体系统可允许低驱动功率，并且可产生高功率传输效率。另外，驱动功率、频率和电流可以是完全可调节的，以允许调节所产生的等离子体的组成和性质。此外，磁感应等离子体系统可操作以在从几十mTorr至几百Torr的范围的宽操作压力下产生等离子体。结合以下的实施方式和附随的附图更详细地描述这些和其他实施例以及它们的许多优点和特征。
附图说明
通过参考说明书的剩余部分和附图，可实现对所公开技术的本质和优点的进一步理解。
图1显示了根据本技术的实施例的示例性处理系统的一个实施例的顶视平面图。
图2A显示了根据本技术的实施例的示例性处理腔室的示意性剖视图。
图2B显示了根据本技术的实施例的图2A中所示的处理腔室的一部分的详细视图。
图3显示了根据本技术的实施例的示例性喷头配置的示意图。
图4A-4F显示了根据本技术的实施例的示例性等离子体系统的示意图。
图5A-5C显示了根据本技术的实施例的示例性等离子体系统的示意图。
图6A-6C显示了根据本技术的实施例的示例性等离子体系统的示意图。
图7A-7C显示了根据本技术的实施例的操作中的示例性等离子体系统的示意图。
图8A-8C显示了根据本技术的实施例的操作中的示例性等离子体系统的示意图。
包括若干附图作为示意图。应理解附图仅用于说明目的，且除非特别说明具有比例，否则不应视为具有比例。另外，作为示意图，提供附图以帮助理解，且可能不包括与真实表示相比的所有方面或信息，且可能包括用于说明目的的夸大材料。
在附随的附图中，类似的部件和/或特征可具有相同的组件符号。此外，可通过在组件符号之后用区分相似部件的字母来区分相同类型的各种部件。若在说明书中仅使用第一组件符号，则该描述适用于具有相同第一组件符号的任何一个类似部件，而与该字母无关。
具体实施方式
传统的等离子体生成系统通常可利用全桥电路驱动方案，全桥电路驱动方案可能由于驱动电路中的功率损耗而消耗大量功率，且操作成本非常高。另外，通过全桥电路驱动的传统等离子体生成系统通常可能需要10,000W或更高的高功率来生成和维持等离子体。
于此描述的磁感应等离子体系统的各种实施例可利用特别配置的LLC谐振半桥电路驱动方案。当与用于等离子体生成的传统全桥电路相比时，LLC谐振半桥电路通常可更可靠且成本有效。当与使用全桥电路驱动方案的传统等离子体生成系统相比时，LLC谐振半桥电路可进一步产生更高的功率传输效率。在使用全桥电路驱动方案的传统等离子体生成系统中，驱动电路上的能量损失可能很大。于此所述的磁感应等离子体系统可产生从功率源到等离子体的更大的能量传输效率，因为LLC谐振半桥电路驱动方案可能需要显著更低的功率来点燃和/或维持等离子体，同时产生类似的前驱物气体的离解。此外，于此描述的磁感应等离子体系统可允许从0W到约1,000W或更高的功率调节。通过调节功率输出，可调节前驱物气体的解离速率以获得所期望的等离子体产物组成。于此所述的磁感应等离子体系统可进一步允许从几十kHz到几十MHz或更高的宽操作频率范围，以及从几十mTorr到几百Torr或更高的宽操作压力范围，在该范围下可生成和维持稳定的等离子体。
图1显示了根据实施例的沉积、蚀刻、烘焙和固化腔室的处理系统100的一个实施例的顶视平面图。在附图中，一对前开式晶片传送盒(FOUP)102供应各种尺寸的基板，这些基板由机械臂104接收并且在被放置到基板处理腔室108a-f(位于串联部分109a-c中)的一个中之前放置在低压保持区域106中。第二机械臂110可用以将基板晶片从保持区域106传送到基板处理腔室108a-f并返回。除了循环层沉积(CLD)、原子层沉积(ALD)、化学气相沉积(CVD)、物理气相沉积(PVD)、蚀刻、预清洁、脱气、取向和其他基板处理之外，每个基板处理腔室108a-f还可配备以执行多种基板处理操作，包括于此所述的干式蚀刻处理。
基板处理腔室108a-f可包括一或多个系统部件，用于在基板晶片上沉积、退火、固化和/或蚀刻介电或金属膜。在一种配置中，两对处理腔室(如，108c-d和108e-f)可用以在基板上沉积材料，且第三对处理腔室(如，108a-b)可用于蚀刻沉积材料。在另一种配置中，所有三对腔室(如，108a-f)可配置成蚀刻基板上的介电或金属膜。所描述的处理的任何一或多个可在与不同实施例中所示的制造系统分开的(多个)腔室中进行。应当理解系统100可考虑用于介电膜的沉积、蚀刻、退火和固化腔室的附加配置。
图2A显示了示例性处理腔室系统200的剖视图，其中处理腔室内具有分隔的等离子体生成区域。在膜蚀刻(如，氮化钛、氮化钽、钨、铜、钴、硅、多晶硅、氧化硅、氮化硅、氮氧化硅、碳氧化硅等)期间，处理气体可通过气体入口组件205流到第一等离子体区域215中。远程等离子体系统(RPS)201可任选地包括在系统中，且可处理第一气体，第一气体接着行进通过气体入口组件205。入口组件205可包括两个或更多个不同的气体供应通道，其中第二通道(未显示)可绕过RPS 201(若包括的话)。
根据实施例显示了且可包括冷却板203、面板217、离子抑制器223、喷头225和基板支撑件265(基板支撑件265上设置有基板255)。基座265可具有热交换通道，热交换流体通过该热交换通道流动以控制基板的温度，热交换通道可在处理操作期间操作以加热和/或冷却基板或晶片。基座265(其可包含铝、陶瓷或其组合)的晶片支撑盘也可使用嵌入式电阻加热器元件而被电阻加热，以实现相对高的温度，诸如从高达或约100℃到更高于或约600℃。
面板217可以是金字塔形、圆锥形或具有狭窄的顶部部分扩展成宽的底部部分的另一类似结构。如图所示，面板217可另外是平坦的，且包括用以分配处理气体的多个通道。取决于RPS 201的使用，等离子体生成气体和/或等离子体激发物种可通过在面板217中的多个孔(如图2B所示)，用于更均匀地输送到第一等离子体区域215中。
示例性配置可包括使气体入口组件205通向由面板217从第一等离子体区域215分隔的气体供应区域258，使得气体/物种通过面板217中的孔流到第一等离子体区域215中。可选择结构和操作特征以防止等离子体从第一等离子体区域215返回到供应区域258、气体入口组件205和流体供应系统210中的显著回流。面板217(或腔室的导电顶部部分)及喷头225显示为具有位于特征之间的绝缘环220，绝缘环220允许AC电位相对于喷头225和/或离子抑制器223施加到面板217。绝缘环220可定位在面板217及喷头225和/或离子抑制器223之间，使得能够在第一等离子体区域中形成电容耦合等离子体(CCP)。挡板(未显示)可另外位于第一等离子体区域215中，或以其他方式与气体入口组件205耦合，以影响通过气体入口组件205流到区域中的流体。
离子抑制器223可包含板或其他几何形状，其在整个结构中限定多个孔，这些孔经配置以抑制离子带电物种从第一等离子体区域215迁移出来，同时允许不带电的中性或自由基物种通过离子抑制器223进到在抑制器和喷头之间的活化气体输送区域。在实施例中，离子抑制器223可包含具有各种孔配置的多孔板。这些不带电的物种可包括高反应性物种，高反应性物种通过较少反应性的载气输送通过孔。如上所述，离子物种通过孔的迁移可减少，且在一些情况下可完全抑制。控制通过离子抑制器223的离子物种的量可有利地提供对与下面的晶片基板接触的气体混合物的增加的控制，这继而可增加对气体混合物的沉积和/或蚀刻特性的控制。例如，调整气体混合物的离子浓度可显著改变其蚀刻选择性，如，SiNx：SiOx蚀刻比率、Si：SiOx蚀刻比率等。在执行沉积的替代实施例中，其还可偏移用于电介质材料的保形-可流动式沉积的平衡。
离子抑制器223中的多个孔可经配置以控制穿过离子抑制器223的活化气体(即，离子、自由基和/或中性物种)的通过。例如，可控制孔的深宽比、或孔直径与长度和/或孔的几何形状，使得减少活化气体中的离子带电物种通过离子抑制器223的流动。离子抑制器223中的孔可包括面向等离子体激发区域215的锥形部分及面向喷头225的圆柱形部分。圆柱形部分可经调整形状和尺寸以控制通往喷头225的离子物种的流动。可调节的电偏压也可施加到离子抑制器223，作为控制离子物种通过抑制器的流动的附加手段。
离子抑制器223可用以减少或消除从等离子体生成区域行进到基板的离子带电物种的量。不带电的中性和自由基物种仍然可通过离子抑制器中的开口以与基板反应。应注意在实施例中可不执行在基板周围的反应区域中完全消除离子带电物种。在某些情况下，离子物种意欲到达基板以执行蚀刻和/或沉积处理。在这些情况下，离子抑制器可帮助将反应区域中的离子物种的浓度控制在有助于处理的水平。
喷头225与离子抑制器223组合可允许存在于第一等离子体区域215中的等离子体避免直接激发基板处理区域233中的气体，同时仍然允许激发物种从腔室等离子体区域215行进到基板处理区域233中。以这种方式，腔室可经配置以防止等离子体接触将蚀刻的基板255。这可有利地保护在基板上图案化的各种复杂结构和膜，若直接与所产生的等离子体接触，则各种复杂结构和膜可能损坏、错位或以其他方式翘曲。另外，当允许等离子体接触基板或接近基板水平时，氧化物物种蚀刻的速率可能增加。因此，若暴露的材料区域是氧化物，则可通过远离基板维持等离子体来进一步保护这种材料。
处理系统可进一步包括功率供应器240，功率供应器240与处理腔室电耦合，以向面板217、离子抑制器223、喷头225和/或基座265提供电功率，以在第一等离子体区域215或处理区域233中产生等离子体。功率供应器可经配置以取决于所执行的处理向腔室输送可调节的功率量。此种配置可允许可调谐等离子体用于正在执行的处理中。与远程等离子体单元不同，远程等离子体单元通常具有开启或关闭功能，可调谐等离子体可经配置以向等离子体区域215输送特定量的功率。这继而可允许发展特定的等离子体特性，使得前驱物可以特定方式解离，以增强由这些前驱物所产生的蚀刻轮廓。
等离子体可在喷头225的上方的腔室等离子体区域215或喷头225的下方的基板处理区域233中点燃。等离子体可存在于腔室等离子体区域215中，以从(例如)含氟前驱物或其他前驱物的流入产生自由基前驱物。通常在射频(RF)范围内的AC电压可施加在处理腔室的导电顶部部分(诸如面板217)和喷头225和/或离子抑制器223之间，以在沉积期间点燃腔室等离子体区域215中的等离子体。RF功率供应器可产生13.56MHz的高RF频率，但是也可单独产生其他频率或与13.56MHz频率组合产生其他频率。
图2B显示了影响通过面板217的处理气体分配的特征的详细视图253。如图2A和图2B所示，面板217、冷却板203和气体入口组件205交叉以限定气体供应区域258，处理气体可从气体入口205输送到气体供应区域258中。气体可填充气体供应区域258并通过面板217中的孔259而流到第一等离子体区域215。孔259可配置成以基本上单向的方式引导流动，使得处理气体可流到处理区域233中，但是可在横穿面板217之后部分地或完全地防止流回到气体供应区域258中。
用于在处理腔室部分200中使用的气体分配组件(诸如喷头225)可被称为双通道喷头(DCSH)，且在图3中描述的实施例中另外详述。双通道喷头可提供允许在处理区域233外侧分离蚀刻剂的蚀刻处理，以在被输送到处理区域中之前提供与腔室部件和彼此的有限的相互作用。
喷头225可包含上板214和下板216。板可彼此耦合以在板之间限定容积218。板的耦合可以是提供通过上板和下板的第一流体通道219及通过下板216的第二流体通道221。所形成的通道可经配置以提供从容积218仅经由第二流体通道221通过下板216的流体通路，且第一流体通道219可与在板和第二流体通道221之间的容积218流体隔离。容积218可通过气体分配组件225的侧边而可流体接近。
图3是根据实施例的与处理腔室一起使用的喷头325的底视图。喷头325可对应于图2A中所示的喷头225。显示第一流体通道219的视图的通孔365可具有复数种形状和配置，以便控制和影响前驱物通过喷头225的流动。显示第二流体通道221的视图的小孔375可在喷头的表面之上基本均匀地分配，甚至在通孔365之间，且可有助于在前驱物离开喷头时提供比其他配置更均匀的前驱物混合。
图4A-4C显示了磁感应等离子体系统400的一个实施例的示意性顶视平面图，磁感应等离子体系统400可被用在或整合在以上所述的处理腔室200中。图4A显示了在生成或点燃等离子体之前的磁感应等离子体系统400；图4B显示了等离子体点燃期间的磁感应等离子体系统400；及图4C显示了当等离子体可通过磁感应等离子体系统400维持时的磁感应等离子体系统400。参照图4A，磁感应等离子体系统400可包括以环形剖面为特征的等离子体源或放电管410，及位于等离子体源410周围的一或多个磁性元件420a、420b、420c、420d。等离子体源410可以环形形状为特征，且可以具有环形轴线1(在图4A中显示为点)的基本环形形状为特征，环形轴线1在环形形状的中心处且垂直于图4A所示的平面延伸。还如图4A所示，为了便于描述的附加的有用参考可包括垂直于环形轴线1的径向方向2，表示从等离子体源410的中心轴线径向向外延伸的方向；及方位角方向3，表示围绕环形轴线1的旋转方向。环形延伸部或环形方向4可限定为等离子体源410的延伸部或方向，沿着该延伸部或方向可在等离子体源410内形成等离子体电流(如下文将更详细描述的)。
如图4D-4F所示，分别示意性地显示了在等离子体点火之前、等离子体点火期间和等离子体维持期间的磁性元件420的侧视图。磁性元件420可各自形成封闭回路。磁性元件420可限定中空中心422，等离子体源410的一部分可穿过中空中心422而延伸穿过磁性元件420。磁性元件420可包括可限定封闭回路的磁体424。磁体424可由铁氧体或其他可磁化材料形成。还如图4D-4F所示，磁感应等离子体系统400可进一步包括缠绕在每个磁性元件420的磁体424的至少一部分周围的线圈430(图4A-4C中未显示)。可向每个线圈430供应电能，用于在等离子体源410内生成等离子体。具体地，供应给线圈430的电能可在每个磁性元件420内侧生成磁场，磁场继而可感应出电场E，如图4A和图4D所示。
等离子体源410可由非导电材料或具有非常低或很小导电性的材料形成，诸如电介质材料，包括(但不限于)陶瓷、石英、蓝宝石等。在一些实施例中，等离子体源410可由导电材料形成，诸如金属，包括(但不限于)铝、不锈钢等，且磁感应等离子体系统400可进一步包括形成等离子体源410的一部分或多个部分的一或多个介电部分或介电断裂440。在任一种配置中，等离子体源410可不形成封闭的导电体，且感应电场E可增加到阈值，以点燃或电离可被供应到等离子体源410中的气体或气体混合物(如图4B和图4E所示)，以形成等离子体。一旦等离子体可被点燃，电离或带电的等离子体产物的至少一部分可在等离子体源410内循环，形成封闭回路电流450，如图4C和图4F所示。线圈430和等离子体电流450可接着以类似于变压器的初级线圈和次级线圈可如何操作的方式操作。由于可连续地向线圈430供应电能，所以可将所供应的电能传递到等离子体电流450，并可维持稳定的等离子体。
参照图4D，磁体424可包括外表面426和内表面428，每个外表面426和内表面428可包括正方形剖面。在一些实施例中，外表面426和内表面428可包括其他多边形剖面、圆形或椭圆形剖面等。具有圆形或椭圆形剖面的磁体424可含有在磁体424内侧产生的基本上所有磁通量，并限制或防止泄漏通量，从而提高磁感应等离子体系统400的效率，而通过线圈430产生的磁通量可能在具有多边形剖面的磁体424的角落处逸出或泄漏。然而，与不形成封闭回路的开放式磁体相比，形成封闭回路的磁体424通常可以是磁感应等离子体系统400提供更高的效率，因为磁通量可能不形成封闭回路并且可在不感应用以生成等离子体的电场的情况下逃逸。
尽管未在图4A-4F中显示，等离子体源410可包括与磁性元件420的剖面形状类似或不同的剖面形状。在一些实施例中，等离子体源410可包括内表面和外表面，内表面和外表面可包括正方形或其他多边形剖面。在一些实施例中，等离子体源410可包括内表面和外表面，内表面和外表面可包括圆形或椭圆形剖面，且等离子体源410可形成为圆形管。
磁性元件420可在各种位置或方位角处围绕等离子体源410定位。图4A-4C显示了磁感应等离子体系统400可包括四个磁性元件420。磁感应等离子体系统400可包括多于或少于四个磁性元件420，但是可包括至少一个磁性元件420。磁性元件420可沿着等离子体源410的环形延伸部以彼此相等的距离定位，使得任何两个相邻的磁性元件420之间的方位角可以是相同的。例如，在图4A-4C中所示的实施例中，磁感应等离子体系统400可包括四个磁性元件420，且任何两个相邻的磁性元件420可以约90度的方位角或者约等离子体源410的环形延伸部的四分之一的距离彼此分开地定位。
取决于磁性元件420的数量，磁感应等离子体系统400可包括在任何两个相邻磁性元件420之间可大于或小于90度的方位角，及在任何两个相邻磁性元件420之间可大于或小于等离子体源410的环形延伸部的四分之一的距离。尽管图4A-4C显示了磁性元件420可以相等的距离或相等的方位角间隔开，但在一些实施例中，磁性元件420可以不相等的距离或不相等的方位角间隔开。换言之，沿着等离子体源410的环形延伸部的两个相邻磁性元件420之间的距离或在两个相邻磁性元件420之间的方位角可与另外两个相邻磁性元件420之间的距离或方位角不同。然而，将磁性元件420以相等的距离或方位角定位可改善在等离子体源410内所产生的等离子体产物的均匀性。因此，在一些实施例中，不管所包括的磁性元件420的数量如何，磁性元件可等距离地围绕等离子体源410间隔开。
尽管图4A-4C中仅显示了一个介电部分440，磁感应等离子体系统400可包括一个以上的介电部分440。在一些实施例中，磁感应等离子体系统400可包括与磁性元件420相同数量的介电部分440。多个介电部分440可沿着等离子体源410的环形延伸部以相等距离或不等距离定位。在一些实施例中，磁感应等离子体系统400可包括比磁性元件420更多的介电部分440。在图4A-4C所示的实施例中，磁性元件420的每一个可以与介电部分440不同的方位角定位。在一些实施例中，至少一个磁性元件420可以与介电部分440相同的方位角定位，或与介电部分440对准。在磁感应等离子体系统400可包括相同数量的磁性元件420和介电部分440的实施例中，每个磁性元件420可与介电部分440对准。
图5A示意性地显示了磁感应等离子体系统500的实施例的透视图，磁感应等离子体系统500可使用或整合在以上所述的处理腔室200中。磁感应等离子体系统500可包括限定基本上环形形状的等离子体源510。尽管未在图5A中显示，类似的参考(包括环形轴线、径向方向，方位角方向和环形延伸部或如图4A中所示的方向)可用于描述图5A所示的实施例。与图4A-4C中所示的等离子体源410(其可包括沿着环形延伸部的均匀或一致的宽度尺寸及平行于环形轴线所测量的均匀且一致的高度尺寸，其中宽度尺寸沿径向方向测量)不同，等离子体源510可包括沿着环形延伸部的变化的宽度尺寸和/或变化的高度尺寸。具体地，等离子体源510可包括一或多个第一部分515，第一部分515可以是或包括金属部分；及一或多个第二部分540，第二部分540可以是或可包括介电部分或介电断裂。第一部分515和第二部分540可以交替的方式布置，使得第一部分515可通过第二部分540彼此电隔离或绝缘。第一部分515和第二部分540可包括彼此不同的宽度和高度。
如图5A所示，第一部分515可各自包括第一宽度尺寸，且第二部分540可各自包括可小于第一宽度尺寸的第二宽度尺寸。第一部分515可各自进一步包括第一高度尺寸，且第二部分540可各自进一步包括可小于第一高度尺寸的第二高度尺寸。因此，第二部分540可限定一或多个环形凹槽，环形凹槽的每一个可经配置以在环形凹槽中接收磁性元件520的至少一部分，如图5B所示，图5B显示了沿图5A的线5B-5B而观察的第二部分540的剖视图。每个第二部分540可进一步包括在每个第二部分540的相对端处的一对凸缘542a、542b(如图5A所示)。凸缘542可经配置以将每个第二部分540与两个相邻的第一部分515耦合。例如，第一部分515的每一个可在相对端处配置有向内唇缘或凸缘。第二部分540的凸缘542和第一部分515的向内唇缘或凸缘可经由螺栓、螺钉、胶水、黏着剂、焊接、钎焊和任何合适的接合或耦合机构彼此耦合。
如图5A和图5B所示，第二部分540可各自形成为圆柱形主体。磁性元件520也可各自形成为圆柱形主体，其可与第二部分540同心地定位。在一些实施例中，第二部分540和/或磁性元件520可形成为具有可以是多边形的剖面形状。如上所论述，圆形或椭圆形磁性元件520可限制磁通泄漏，从而提高磁感应等离子体系统500的效率。因此，在一些实施例中，磁性元件的特征可在于椭圆形剖面。
图5C显示了沿图5A中的线5C-5C观察的第一部分515的剖视图。如图5C所示，第一部分515可各自包括矩形或正方形剖面。第一部分515可各自包括第一壁或内壁512、第二壁或外壁514、第三壁或上壁516及第四壁或下壁518。每个第一部分515的宽度尺寸可通过在内壁512和外壁514的外表面之间的距离限定。每个第一部分515的高度尺寸可通过在上壁516和下壁518的外表面之间的距离限定。
在一些实施例中，至少每个第一部分515的高度尺寸可经配置为大于或约为每个磁性元件520的外径，使得当磁性元件520可定位在第二部分540周围及至少部分地被接收在由第二部分540限定的环形凹槽内时，磁性元件520可不在第一部分515的上壁516的上方或在第一部分515的下壁518的下方延伸。利用这种配置，当磁感应等离子体系统500可整合在腔室系统200中时，第一部分515的上壁516和下壁518可提供支撑或承载表面，用于支撑其他腔室部件和/或磁感应等离子体系统500，同时磁性元件520可不接触或承载腔室系统200的相邻或附近腔室部件的重量。此外，因为磁性元件520可不延伸超过上壁516和下壁518，磁感应等离子体系统500的最上面和最下面的表面轮廓可分别由上壁516和下壁518基本上限定，上壁516和下壁518可基本上是平坦的。因为几个部件(诸如面板217、离子抑制器223、喷头225等)可能包括类板状结构或平面表面，这种轮廓可改善磁感应等离子体系统500与腔室系统200的兼容性。
尽管未在图5A中显示，第一部分515可包括形成在上壁516中的孔，用于将一或多种前驱物引入或流入到等离子体源510中以在其中生成等离子体。第一部分515可进一步包括形成在下壁518中的孔，用于释放在等离子体源510内生成的等离子体产物的至少部分。在一些实施例中，第一部分515可不包括上壁516和下壁518。等离子体源510可部分地由内壁512和外壁514形成，且部分地由腔室系统200的腔室部件的相邻板或表面形成。
如可从图4A-4F和图5A-5C中所示的实施例的描述中可看出，于此使用的术语环形或环形形状不限于沿着环形形状的延伸部而具有均匀或一致的宽度和/或高度尺寸的环面或环形形状。此外，在一些实施例中，环形形状可包括沿着环形形状的延伸部的一致或类似的剖面，诸如图4A-4F中所示的实施例，而在一些实施例中，环形形状可包括沿着环形形状的延伸部的变化的剖面，诸如图5A-5C中所示的实施例。此外，在一些实施例中，环形延伸部可限定基本上圆形的形状，诸如图4A中所示的实施例的环形延伸部，而在一些实施例中，环形延伸部可限定多边形状，其可包括一或多个弧形和一或多个基本上平直的区段。例如，图5A-5C中所示的实施例的第一部分515可以是或包括弧形延伸部，而第二部分540可以是或包括基本上平直的延伸部。此外，在一些实施例中，等离子体源可不包括弧形部分，且第一和/或第二部分二者都可以是或包括基本上平直的延伸部。因此，等离子体源可包括所有弧形部分、所有基本上平直的部分，或其组合。
图6A显示了示例性处理腔室系统600的选择部件，处理腔室系统600可包括磁感应等离子体系统610。处理腔室系统600可进一步包括气体入口组件605和位于磁感应等离子体系统610上游的面板617和位于磁感应等离子体系统610下游的气体分配部件615。处理腔室系统600可包括气体分配部件615下游的附加部件，类似于参考图2A所述的那些部件，诸如一或多个气体分配部件、限定基板处理区域的各种部件、基板支撑件等，其未在图6A中显示，但将容易理解为含括在包含所示部件的腔室内。
在膜蚀刻、沉积和/或其他半导体处理期间，一或多个前驱物可流过气体入口组件605进到气体供应区域658中。前驱物可包括可用于半导体处理的任何气体或流体，包括(但不限于)处理气体(process gas)、处理气体(treatment gas)、载气或用于半导体处理的任何合适的气体或气体混合物。面板617可促进前驱物从气体供应区域658均匀分配到磁感应等离子体系统610中。类似于上文参照图2A和图2B描述的面板217，面板617可包括孔659，孔659被配置成以基本上单向的方式引导流动，使得前驱物可流到磁感应等离子体系统610中，但是可部分地或完全地防止前驱物在横穿面板617之后回流到气体供应区域658中。如图6A所示，磁感应等离子体系统610可限定一或多个流动通道612，流动通道612可与面板617的仅部分或选择区域(area)或区域(region)对准或相交。因此，在一些实施例中，孔659可仅在面板617与所限定的流动通道612相对应的选择区域中形成，如图6A所示。
在一些实施例中，孔659可形成在选择区域的外侧，诸如横跨或遍布面板617的中心区域或基本上整个表面区域。为了引导前驱物流到磁感应等离子体系统610中，或为了限制或防止前驱物在磁感应等离子体系统610外侧的流动，处理腔室600可任选地包括中间板614。中间板614可位于面板下游与面板617以邻接关系定位，以防止或阻止前驱物流过形成在选择区域外侧的孔659。中间板614可包括一或多个切口616，切口616可与由磁感应等离子体系统610限定的流动通道612的开口对准，以允许前驱物流到磁感应等离子体系统610中。尽管在一些实施例中可省略中间板614，但是在一些实施例中，中间板614可利用面板设计促进翻新操作，该等面板设计限定了横跨部件的更均匀的孔分配。
尽管图6A中显示了单个板，气体分配部件615可包括一或多个板，一或多个板可控制在磁感应等离子体系统610内侧产生的等离子体产物在下游进到基板处理区域中的分配。在一些实施例中，气体分配部件615可包括离子抑制器(类似于上文参考图2描述的离子抑制器223)，经配置以控制来自磁感应等离子体系统610的活化气体的通过。活化气体可包括离子、自由基和/或中性物种，其也可统称为等离子体产物。类似于离子抑制器223，气体分配部件615的离子抑制器可包括具有各种孔配置的多孔板，以控制或抑制带电粒子或物种从磁感应等离子体系统610中迁移，同时允许不带电的中性或自由基物种通过离子抑制器。在一些实施例中，气体分配部件615可进一步包括气体分配组件或喷头，类似于上文参照图2描述的气体分配组件或双通道喷头225。气体分配部件615的喷头可允许在输送到处理区域之前将各种前驱物分离到基板处理区域外侧，同时在前驱物离开喷头时促进前驱物的均匀混合。
尽管于此将离子抑制器和喷头二者都描述为气体分配部件615可包括的示例性部件，但在一些实施例中，气体分配部件615可仅包括离子抑制器或喷头的一个但不包括另一个，或可不包括离子抑制器或喷头任一者。在一些实施例中，气体分配部件615可包括其他合适的板或气体分配控制机构。在一些实施例中，气体分配部件615可不包括任何气体分配控制机构。在一些实施例中，处理腔室系统600可完全不包括气体分配部件615。换言之，在磁感应等离子体系统610内侧生成的等离子体可直接分配到基板处理区域中，而不通过任何分配控制或过滤机构。
参照图6B和图6C，将更详细地描述磁感应等离子体系统610。图6B显示了磁感应等离子体系统610的顶部透视图，且图6C显示了沿图6B中的线6C-6C观察的磁感应等离子体系统610的剖视图。尽管未在图6B和图6C中显示，类似的参考(包括环形轴线、径向方向、方位角方向和环形延伸部或图4A中所示的方向)可用于描述图6B和图6C中所示的实施例。在图6B和图6C中所示的实施例和在图4A-5C中所示的实施例之间的一个区别可包括磁感应等离子体系统610可包括两个等离子体源：第一等离子体源620和第二等离子体源630。在一些实施例中，第一等离子体源620可以是或包括先前描述的源的任何特征，且可在第一等离子体源620的内环形半径内结合第二等离子体源630。第一等离子体源620和第二等离子体源630可限定两个环形形状，两个环形形状具有共同的中心和共同的环形轴线。第二等离子体源630可从第一等离子体源620径向向内定位。因此，第一等离子体源620也可被称为外等离子体源620，而第二等离子体源630也可被称为内等离子体源620。
参照图6B，第一和第二等离子体源620、630的每一个可包括多个部分。第一等离子体源620可包括以交替的方式布置的一或多个第一部分622及一或多个第二部分624，第一部分622可以是或包括导电部分，第二部分624可以是或可包括介电部分或介电断裂，使得第一部分622可通过第二部分624彼此电隔离或绝缘。第一部分622和第二部分624可彼此流体地耦合以限定第一等离子体循环通道。等离子体产物的电离或带电物种的至少一部分可在第一等离子体循环通道内侧循环，且可沿着第一等离子体源620的环形延伸部通过至少第一部分622的一部分或多个部分和/或第二部分624的一部分或多个部分。
类似地，第二等离子体源630可包括以交替的方式布置的一或多个第三部分632及一或多个第四部分634，第三部分632可以是或可包括导电部分，第四部分634可以是或可包括介电部分或介电断裂，使得第三部分632可通过第四部分634彼此电隔离或绝缘。第三部分632和第四部分634可彼此流体耦合以限定第二等离子体循环通道。在第二等离子体源630内产生的等离子体产物的电离或其他带电物种的至少一部分可沿着第二等离子体源630的环形延伸部通过至少第三部分632的一部分或多个部分和/或第四部分634的一部分或多个部分循环。
在图6B中所示的实施例中，第一等离子体源620可包括四个第一部分622和四个第二部分624，而第二等离子体源630可包括两个第三部分632和两个第四部分634。尽管显示了四个第一部分622和四个第二部分624用于第一等离子体源620，第一等离子体源620可包括更多或更少的第一部分622和/或第二部分624。类似地，尽管显示了用于第二等离子体源630的两个第三部分632和两个第四部分634，第二等离子体源630可包括更多或更少的第三部分632和/或第四部分634。
第一等离子体源620的四个第二部分624可沿着第一等离子体源620的环形延伸部彼此等距地定位，并且可以约90度的方位角彼此分开地定位。第二等离子体源630的两个第四部分634也可沿着第二等离子体源630的环形延伸部彼此等距地定位，并且可以约180度的方位角彼此分开地定位。另外，第二等离子体源630的第四部分634的每一个可定位在与第一等离子体源620的第二部分624的每一个不同的方位角处。第二等离子体源630的第四部分634可定位在与第一等离子体源620的两个附近的第二部分624的方位角相差约45度，或任何其它合适的角度的方位角处。将第一等离子体源620的第二部分624和第二等离子体源630的第四部分634定位在不同的方位角处可限制在第一等离子体源620的第一部分622与第二等离子体源630的第三部分632之间的干扰或电弧问题，特别是当在等离子体点火期间可施加高电压时。
沿着相应的第一和第二等离子体源620、630的环形延伸部的每个第一部分622的延伸部和每个第三部分632的延伸部可以弧形形状为特征，而每个第二部分624的延伸部和每个第四部分634的延伸部可基本上是平直的。关于第一等离子体源620，每个第一部分622的延伸部与每个第二部分624的延伸部的比率可大于或约1.5：1、2：1、2.5：1、3：1、3.5：1、4：1、4.5：1、5：1、6：1、7：1、8：1、9：1、10：1或更大。关于第二等离子体源630，每个第三部分632的延伸部与每个第四部分634的延伸部的比率可大于或约1.5：1、2：1、2.5：1、3：1、3.5：1、4：1、5：1、6：1、7：1、8：1、9：1、10：1或更大。弧形第一部分622的延伸部与基本上平直的第二部分624的比率越大，或弧形第三部分632的延伸部与基本上平直的第四部分634的比率越大，则用于等离子体电流的第一和第二等离子体源620、630内的循环通道可越紧密地类似于圆形，以促进等离子体电流的循环，且其中所产生的等离子体可更稳定和均匀。然而，第二和/或第四部分624、634的延伸部可维持在至少阈值之上，使得可限制或消除在与第二或第四部分624、634的任一侧耦合的第一和/或第三部分622、632之间的特别地由等离子体点火期间的高电压引起的潜在电弧故障或其他电弧问题。
类似于图5A和图5B中所示的等离子体源510的第二部分540，第二和/或第四部分624、634的每一个可限定环形凹槽，用于在凹槽中接收磁性元件的至少一部分(图6B和图6C中未显示)。如上所论述，当磁感应等离子体系统610可整合在腔室系统600中时，环形凹槽可配置成使得当磁性元件可被接收在环形凹槽中时，磁性元件可不接触上腔室部件和下腔室部件。线圈可缠绕每个磁性元件的至少一部分。可将电能供应给线圈，用于在第一等离子体源620和第二等离子体源630的每一个内产生等离子体。一旦在第一和第二等离子体源620、630内产生等离子体，等离子体产物的电离或带电物种的至少一部分可沿着第一和第二等离子体源620、630的环形延伸部在感应电场下在第一和第二等离子体通道内循环，同时产物的中性或自由基物种，以及电离或带电物种的一部分可通过流动通道612流到基板处理区域中。
参照图6B并使用第一等离子体源620的第一部分622和第二部分624作为示例，将更详细地描述在第一部分622和第二部分624之间的耦合及在第三部分632和第四部分634之间的耦合。第二部分624的每一个可包括沿着第一等离子体源620的环形延伸部定向的中空圆柱形主体640和配置在中空圆柱形主体640的相对端处的两个凸缘642a、642b。第一部分622的每一个可包括弧形管状主体644，平行于第一等离子体源620的环形轴线而延伸。弧形管状主体644可限定上文参照图6A描述的流动通道612的一或多个。流动通道612可包括基本一致的宽度尺寸。因此，用于前驱物流到第一等离子体源620中的每个第一部分622的开口和用于释放所产生的等离子体产物的每个第一部分622的开口可包括与弧形管状主体644基本相同的宽度尺寸，其中宽度尺寸沿着径向方向测量。
第一部分622可包括弧形的第一或内壁646、弧形的第二或外壁648及连接内壁646和外壁648的端部的两个侧壁650(图6B中仅标记一个)。内壁646、外壁648和侧壁650一起可形成管状主体644。侧壁650的每一个可包括穿过侧壁650形成的孔652，孔652可与相邻的第二部分624的圆柱形主体640的中空中心对准，使得可建立在第一部分622和第二部分624之间的流体连通。在一些实施例中，第一部分622的侧壁650可包括凸缘或向外锥形部分654，以提供足够的表面区域用于与第二部分624的凸缘642耦合。第一部分622的侧壁650和第二部分624的凸缘642可经由螺栓、螺钉、胶水、黏着剂、焊接、钎焊和任何合适的接合或耦合机构而彼此耦合。为了防止气体泄漏，每个侧壁650的外表面可形成有环形凹槽656(如图6C所示)，用于接收密封环(诸如O形环或任何其他合适的密封元件)，当第一部分622和第二部分624可彼此耦合时，密封环可被按压抵靠凸缘642，以在其间产生密封。
参照图6C，第一部分622的每一个可包括内宽度尺寸，该内宽度尺寸可被限定为在内壁646和外壁648的内表面之间沿径向方向的距离。第二部分624的每一个可包括内径，内径可被限定为圆柱形主体640的内径。每个第一部分622的内宽度尺寸可与每个第二部分624的内径基本相同或相似，使得可促进第一等离子体源620内的等离子体产物的电离或带电物种的流动，以维持其中产生的等离子体。第一部分622的每一个可包括高度尺寸，高度尺寸可被限定为平行于环形轴线的第一部分622的延伸部。每个第一部分622的高度尺寸可类似于或大于每个第一部分622的内宽度尺寸或每个第二部分624的内径。每个第一部分622的高度尺寸与其内宽度尺寸或与每个第二部分624的内径的比率可大于或约1：1、1.5：1、2：1、2.5：13：1或更大。第二等离子体源630的第三部分632的每一个可配置有与第一等离子体源620的第一部分622的内宽度尺寸和高度尺寸相同或相似的内宽度尺寸和高度尺寸，且第二等离子体源630的第四部分634可配置有与第一等离子体源620的第二部分624的内径相同或相似的内径。因此，每个第三部分632的高度尺寸可类似于或大于第二等离子体源630的每个第三部分632的内宽度尺寸或第二等离子体源630的每个第四部分634的内径。每个第三部分632的高度尺寸与其内宽度尺寸或与每个第四部分634的内径的比率可大于或约1：1、1.5：1、2：1、2.5：13：1或更大。
配置每个第一和/或第三部分622、632的高度尺寸大于其内宽度尺寸(并因此大于每个第二和/或第四部分624、634的内径)不仅可在第二和/或第四部分624、634周围产生用于在其中接收磁性元件的环形凹槽，但也可有助于维持沿第一和第二等离子体源620、630的环形延伸部循环通过圆柱形主体640和第一和第三部分622、632的等离子体电流。这可能部分是因为等离子体电流(及驱动电流的电场)可维持在远离上方的面板617的一定距离处，及远离下方的气体分配部件615的一定距离处，每个都可由金属构成，并且可影响等离子体电流或电场。
在一些实施例中，磁感应等离子体系统610可进一步包括耦合到弧形管状主体644的相对的(如，顶部和底部)边缘的介电环构件660a、660b(参见图6B)。当磁感应等离子体系统610可结合到腔室系统600时，介电环构件660a、660b可将第一和第三部分622、632与邻近磁感应等离子体系统610的其他金属腔室部件电隔离或绝缘。当磁感应等离子体系统610可结合到腔室系统600并且可接触腔室的其他金属部件时，介电环构件660a、660b可进一步使第一部分622彼此电隔离或绝缘，并且可使第三部分632彼此绝缘。耦合到弧形管状主体644的顶部的介电环构件660a可限定第一平面支撑表面并且当磁感应等离子体系统610可结合到腔室系统600中时，可经配置以在第一平面支撑表面处支撑气体入口组件605或面板617的至少一个。耦合到弧形管状主体644的底部的介电环构件660b可限定第二平面支撑表面，且磁感应等离子体系统610可通过气体分配部件615在第二平面支撑表面处支撑。
进一步参照图6B和图6C，第一等离子体源620可包括配置在第一部分622的外壁648处的一或多个监测窗口或孔662。尽管未显示，但第二等离子体源630也可包括配置在第三部分632的壁处的一或多个监测窗口或孔。光学、电学、化学或其他合适的探针或监测机构可耦合到监测窗口662，用于监测在第一和第二等离子体源620、630内产生的等离子体的性质。由监测机构收集的数据可用以建立封闭回路或反馈控制，用于自动调节供应给线圈的功率、电流等，以产生具有所期望性质和/或所产生等离子体产物的组成的稳定等离子体。
图7A-7C显示了根据本技术的实施例的操作中的示例性等离子体系统的示意图。图7A示意性地显示了结合有磁感应等离子体系统710的处理腔室系统700的顶视图，磁感应等离子体系统710类似于上文参考图5所述者。图7B示意性地显示了结合有磁感应等离子体系统710b作为直接等离子体源的处理腔室系统700b的剖视图。图7C示意性地显示了结合有磁感应等离子体系统710作为远程等离子体源的处理腔室系统700c的剖视图。
参照图7B，磁感应等离子体系统710b可位于基板处理区域720的正上方，基板可由基座730支撑在基板处理区域720内。一或多个前驱物可经由气体入口组件705流到磁感应等离子体系统710b中。功率源715可与磁感应等离子体系统710b耦合，用于向磁感应等离子体系统710b供应电能，以从前驱物生成等离子体。磁感应等离子体系统710b可包括等离子体源，等离子体源可配置有开口底部，使得等离子体产物(包括离子、自由基和/或中性物种)以及任何载气可直接流到待处理的基板上。离开磁感应等离子体系统710b的等离子体产物可扩散到锥形容积中，使得当等离子体产物可到达基座730时，等离子体产物可扩散到待处理的基板的整个表面区域上。
取决于在磁感应等离子体系统710b和基座730之间的距离、待处理的基板的大小以及其他因素，磁感应等离子体系统710b可配置有适当的宽度尺寸，使得可确保待由等离子体产物处理的基板的全覆盖，且可最小化用于生成等离子体产物的前驱物的浪费。如上所论述的，宽度尺寸可限定为在内壁和外壁的内表面之间的距离，在图7A中用W表示。在一些实施例中，宽度尺寸可大于或约处理腔室700的半径(在图7A中用R表示)的10％。在一些实施例中，宽度尺寸可大于或约处理腔室700的半径R的20％、30％、40％、50％、60％、70％、80％或更多。
参照图7C，磁感应等离子体系统710c可作为远程等离子体源而整合到腔室系统700c中。腔室系统700c可包括离子抑制器740，离子抑制器740经配置以控制所生成的等离子体产物的通过。类似于上文参考图2论述的离子抑制器223，离子抑制器740可包括具有各种孔配置的多孔板，以控制或抑制带电粒子或物种从磁感应等离子体系统710c中迁移，同时允许不带电的中性或自由基物种通过离子抑制器740。腔室系统700可进一步包括气体分配组件或喷头750，类似于上文参照图2描述的气体分配组件或双通道喷头225。喷头750可促进中性或自由基物种均匀分配到处理区域720中和待处理的基板上。在一些实施例中，喷头750可进一步允许在被输送到处理区域之前将各种前驱物分离到基板处理区域720的外侧，同时促进前驱物在它们离开喷头750时的均匀混合。因为离子抑制器740和/或喷头750可促进选择的等离子体产物均匀分配到处理区域720中并且到基板上，当磁感应等离子体系统710c经配置为直接等离子体源时，磁感应等离子体系统710c可包括可类似于或小于磁感应等离子体系统710b的宽度尺寸的宽度尺寸。在各种实施例中，磁感应等离子体系统710c的宽度尺寸可大于或约处理腔室700的半径R的20％、30％、40％、50％、60％、70％、80％或更多。
图8A-8C显示了根据本技术的实施例的操作中的示例性等离子体系统的示意图。图8A示意性地显示了结合有磁感应等离子体系统810的处理腔室系统800的顶视图，磁感应等离子体系统810类似于上文参照图6描述的磁感应等离子体系统610。图8B示意性地显示了结合有磁感应等离子体系统810b作为直接等离子体源的处理腔室系统800b的剖视图。图8C示意性地显示了结合有磁感应等离子体系统810c作为远程等离子体源的处理腔室系统800c的剖视图。
除了磁感应等离子体系统810b，810c可各自包括两个环形等离子体源：内等离子体源812和外等离子体源814之外，处理腔室系统800b、800c的配置可分别类似于处理腔室系统700b、700c的配置。由内等离子体源812b、812c所生成的等离子体产物可流到待处理基板的圆形中心区域上，而由外等离子体源814b、814c所生成的等离子体产物可流到基板的环形或外侧区域上，环形或外侧区域围绕中心区域的至少一个周边部分并与该周边部分重叠。
为了确保从内和外等离子体源812、814释放的等离子体产物完全覆盖基板，内和外等离子体源812、814的宽度尺寸可各自大于或约处理腔室800的半径的5％、10％、15％、20％、25％、30％、35％、40％、45％或更大。在图8C的实施例中，因为离子抑制器840和/或喷头850可促进等离子体产物均匀分配到基板上，所以内和外等离子体源812c、814c的宽度尺寸可小于图8B的实施例的内和外等离子体源812b、814b的宽度尺寸。尽管等离子体源812、814可配置有更大的宽度尺寸，以确保通过等离子体产物完全覆盖基板，但是宽度尺寸可保持在特定值，使得由内和外等离子体源812、814内的等离子体电流所生成的磁场之间的干扰可最小化。为了进一步限制这种干扰，还可维持在内和外等离子体源812、814之间的足够距离。在一些实施例中，内和外等离子体源812、814可各自配置有在处理腔室800的半径的约10％和约30％之间的宽度尺寸。在内和外等离子体源812、814之间的距离可以维持在等离子体源812、814的宽度尺寸的约50％或更多。尽管内和外等离子体源812、814显示为具有基本相似的宽度尺寸，但是内和外等离子体源812、814可具有不类似或不同的宽度尺寸。
上述磁感应等离子体系统的各种实施例可利用LLC谐振半桥电路驱动方案。传统的等离子体生成系统通常可利用全桥电路驱动方案。与用于等离子体生成的传统全桥电路相比，LLC谐振半桥电路通常可更可靠且成本有效。LLC谐振半桥电路可以是于此所述的磁感应等离子体系统产生更高的功率传输效率。与使用全桥电路驱动方案的传统等离子体生成系统相比，用于磁感应等离子体系统的LLC谐振半桥电路驱动方案可能需要显著更低的功率来点燃和/或维持等离子体，同时产生类似的前驱物气体解离。例如，如于此所述的磁感应等离子体系统可能需要约1,000W、800W、600W、400W、200W或更低的等离子体点火功率，并且可能需要仅点火功率的1/2、1/3或更低的等离子体维持功率。相反地，部分由于驱动电路上的能量损失，利用全桥电路驱动方案的等离子体生成系统可能需要10,000W或更多，以用于等离子体点火和/或维持。
此外，利用全桥电路驱动方案的传统等离子体生成系统可允许有限的功率调节。利用LLC谐振半桥电路驱动方案的磁感应等离子体系统可允许从0W到约1,000W或更高的功率调节。例如，可通过调节驱动电压、电流和/或频率来调制功率。增加驱动电压和/或电流可增加功率输出，而降低驱动频率可增加功率输出。通常，较高的功率输出可产生较高的前驱物气体的解离速率。通过调节功率输出，可调制前驱物气体的解离速率以实现所期望的等离子体产物的组成。
此外，在磁感应等离子体系统可包括内环形等离子体源和外环形等离子体源的实施例中，可向内环形等离子体源和外环形等离子体源供应不同水平的功率。例如，可向外环形等离子体源供应相对较高的功率(诸如约300W至约1,000W)，而可向内环形等离子体源供应相对较低的功率(诸如约100W至约600W)。尽管可向内环形等离子体源和外环形等离子体源供应不同水平的功率，但是内环形等离子体源和外环形等离子体源的驱动频率可匹配，使得内环形等离子体源和外环形等离子体源中或附近的感应电场可不彼此抵消。
于此所述的磁感应等离子体系统可以从约50kHz至约500MHz的宽带率范围操作以产生等离子体。然而，较低的频率可产生较高的功率传输效率，因为高频率可能导致磁性元件中的功率损耗。在一些实施例中，LLC谐振半桥电路可以在约100kHz和约20MHz之间、在约200kHz和约10MHz之间、在约400kHz和约1MHz之间或任何合适范围的频率下向多个线圈供应电流。磁感应等离子体系统也可在非常宽的压力范围下操作。环形等离子体源内的操作压力可维持在约1mTorr至约500Torr之间，或甚至更高的压力。前驱物可以各种流速流到等离子体源中，使得等离子体源内的压力可维持在约1mTorr和约500Torr之间，或约10mTorr和约300Torr之间，或约15mTorr和约200Torr之间，或任何合适的范围。可通过于此所述的磁感应等离子体系统在各种功率水平、频率范围和/或压力范围下生成和维持非常稳定的等离子体。这可能部分是因为一旦等离子体可能被点燃，线圈和等离子体电流可以类似于变压器的初级和次级线圈的方式操作，以维持所产生的等离子体在稳定状态下。
在前面的描述中，出于解释的目的，已经阐述了许多细节以便提供对本技术的各种实施例的理解。然而，对于本领域技术人员显而易见的是，某些实施例可在没有这些细节的一些，或具有附加细节的情况下实践。
已经公开了若干实施例，本领域技术人员将认识到在不背离实施例的精神的情况下，可使用各种修改、替代构造和等同物。另外，没有描述许多众所周知的处理和组件，以避免不必要地模糊本技术。因此，以上描述不应被视为限制本技术的范围。另外，方法或处理可被描述为顺序的或步骤的，但是应该理解操作可同时执行，或以与列出的顺序不同的顺序执行。
在提供值的范围的情况下，应当理解除非上下文另有明确规定，否则还具体揭露了在该范围的上限和下限之间的每个中间值，到下限单位的最小部分。在所提及范围中的任何提及值或未提及的中间值与该所提及范围中的任何其他提及或中间值之间的任何较窄范围都包括在内。这些较小范围的上限和下限可独立地包括或排除在该范围中，且包括在较小范围中的任一个，两个皆无或两个限制的每个范围也包括在技术内，受到在所提及范围中任何特别排除的限制。在提及的范围包括一个或两个限制的情况中，还包括排除这些所包括限制的一个或两个的范围。
如于此和附随的权利要求中所使用的，单数形式“一(a)”，“一(an)”和“该(the)”包括复数参考，除非上下文另有明确说明。因此，例如，提及“一前驱物”包括多个这样的前驱物，且提及“该层”包括提及一或多个层及本领域技术人员已知的其等同物等等。
此外，当在这份说明书和以下的权利要求中使用时，词语“包含(comprise(s))”、“包含(comprising)”、“含有(contain(s))”、“含有(containing)”、“包括(include(s))”和“包括(including)”意欲指定所提及的特征、整数、部件或操作的存在，但它们不排除存在或添加一或多个其他特征、整数、部件、操作、动作或群组。

Claims (15)

1.一种磁感应等离子体系统，包括：
第一等离子体源，包括彼此流体地耦合的多个第一部分和多个第二部分，使得在所述第一等离子体源内产生的等离子体产物的至少一部分循环通过所述第一等离子体源内的所述多个第一部分的至少一个和所述多个第二部分的至少一个，其中所述多个第二部分的每一个包含电介质材料，其中所述多个第一部分和所述多个第二部分以交替的方式布置，使得所述多个第一部分至少部分地通过所述多个第二部分彼此电绝缘；
多个第一磁性元件，其中所述多个第一磁性元件的每一个限定封闭回路并且围绕所述多个第二部分的一个定位；以及
其中所述第一等离子体源限定第一环形形状，所述第一环形形状具有第一环形延伸部和垂直于所述第一环形延伸部的第一环形轴线，其中所述多个第一部分的每一个包括平行于所述第一环形轴线的第一尺寸，其中所述多个第二部分的每一个包括平行于所述第一环形轴线的第二尺寸，其中所述第一尺寸大于所述第二尺寸，使得所述多个第二部分限定多个凹槽，所述多个凹槽的每一个经配置以接收所述多个第一磁性元件的一个的至少一部分。
2.如权利要求1所述的磁感应等离子体系统，其中所述多个第一部分的每一个包含第一开口和第二开口，其中所述多个第一部分的每一个以及对应的所述第一开口和所述第二开口限定平行于所述第一环形轴线的流动通道，使得用于在所述第一等离子体源内产生所述等离子体产物的前驱物通过所述第一开口流到每个第一部分中，且所产生的所述等离子体产物的至少一部分通过所述第二开口流出每个第一部分。
3.如权利要求2所述的磁感应等离子体系统，进一步包含位于所述第一开口上方的多个第一介电环构件和位于所述第二开口下方的多个第二介电环构件，使得当所述磁感应等离子体系统整合到半导体处理腔室中并沿着所述第一环形轴线定位在所述半导体处理腔室的金属部件之间时，所述多个第一部分彼此电绝缘。
4.如权利要求3所述的磁感应等离子体系统，其中所述半导体处理腔室包含气体入口组件和气体分配组件，其中所述气体入口组件位于所述磁感应等离子体系统的上游，其中所述气体分配组件位于所述磁感应等离子体系统的下游，其中所述多个第一介电环构件限定第一平面支撑表面且经配置以支撑所述气体入口组件，且其中所述多个第二介电环构件限定第二平面支撑表面且经配置以由所述气体分配组件支撑。
5.如权利要求1所述的磁感应等离子体系统，其中所述多个第二部分的每一个包括一对凸缘，该对凸缘配置在每个第二部分的两个相对端处并经配置以将每个第二部分与两个相邻的第一部分耦合。
6.如权利要求1所述的磁感应等离子体系统，其中所述多个第一部分的每一个包括沿着所述第一环形延伸部的第一延伸部，其中所述多个第二部分的每一个包括沿着所述第一环形延伸部的第二延伸部，所述第一延伸部与所述第二延伸部的比率在约10：1和约2：1之间，使得促进所述第一等离子体源内的等离子体产物的至少一部分的循环。
7.如权利要求1所述的磁感应等离子体系统，进一步包括：
第二等离子体源，限定第二环形形状，所述第二环形形状具有第二环形延伸部和垂直于所述第二环形延伸部的第二环形轴线，所述第二环形轴线与所述第一环形轴线对准，其中所述第二等离子体源从所述第一等离子体源径向向内定位，所述第二等离子体源包含第三部分和第四部分，所述第三部分或所述第四部分的至少一个包含电介质材料；以及
至少一个第二磁性元件，限定封闭回路并围绕所述第三部分或所述第四部分的至少一个而定位。
8.如权利要求7所述的磁感应等离子体系统，其中所述至少一个第二磁性元件定位在与所述多个第一磁性元件的每一个的方位角不同的方位角处，使得由所述多个第一磁性元件的每一个所产生的电场和由所述至少一个第二磁性元件所产生的电场之间的干涉减小。
9.如权利要求7所述的磁感应等离子体系统，其中所述第一等离子体源和所述第二等离子体源经配置以使得离开所述第一等离子体源的所述等离子体产物扩散到基板的第一区域上，其中所述第一区域限定基本上环形的形状，其中离开所述第二等离子体源的所述等离子体产物扩散到所述基板的第二区域上，其中所述第二区域限定基本上圆形的形状，且所述第一区域和所述第二区域重叠。
10.如权利要求7所述的磁感应等离子体系统，进一步包括：
多个电耦合的第一线圈，各自围绕所述多个第一磁性元件的每一个的至少一部分配置；以及
第二线圈，围绕所述至少一个第二磁性元件的至少一部分配置，其中所述磁感应等离子体系统由LLC谐振半桥电路驱动，其中：
所述LLC谐振半桥电路被配置成以一频率向所述多个电耦合的第一线圈供应第一电流，所述频率与所述LLC谐振半桥电路经配置以向所述第二线圈供应第二电流的频率匹配。
11.如权利要求10所述的磁感应等离子体系统，其中所述LLC谐振半桥电路经配置以在约100kHz和约20MHz之间的频率下供应所述第一电流和所述第二电流。
12.如权利要求10所述的磁感应等离子体系统，其中所述LLC谐振半桥电路经配置以向所述多个电耦合的第一线圈供应第一功率并向所述第二线圈供应第二功率，所述第一功率大于所述第二功率。
13.如权利要求10所述的磁感应等离子体系统，其中所述LLC谐振半桥电路经配置以向所述多个电耦合的第一线圈供应范围在约100W和1,000W之间的第一功率并向所述第二线圈供应范围在约100W和约1,000W之间的第二功率。
14.一种半导体处理腔室，包括：
磁感应等离子体系统，其中所述磁感应等离子体系统包括：
第一等离子体源，具有第一环形形状，所述第一等离子体源限定所述第一环形形状的第一环形凹槽；以及
第一磁性元件，形成封闭回路并围绕所述第一等离子体源的一部分定位，所述第一磁性元件的至少一部分被接收在所述第一环形凹槽内，其中：
所述第一等离子体源包括用于用以在所述第一等离子体源内从所述第一等离子体源产生等离子体产物的前驱物的第一入口和用于所产生的所述等离子体产物的第一出口，其中所述第一入口、所述第一出口和所述第一等离子体源具有沿着所述第一环形形状的径向方向测量的共同宽度尺寸。
15.如权利要求14所述的半导体处理腔室，其中所述磁感应等离子体系统进一步包括：
第二等离子体源，具有第二环形形状，所述第二等离子体源和所述第一等离子体源具有共同环形轴线，所述第二等离子体源从所述第一等离子体源径向向内定位，所述第二等离子体源限定所述第二环形性状的第二环形凹槽；以及
第二磁性元件，形成封闭回路并围绕所述第二等离子体源的一部分定位，所述第二磁性元件的至少一部分被接收在所述第二环形凹槽内，其中：
所述第二等离子体源包括用于用以在所述第二等离子体源内从所述第二等离子体源产生等离子体产物的所述前驱物的第二入口和用于所产生的所述等离子体产物的第二出口，其中所述第二入口、所述第二出口和所述第二等离子体源具有沿着所述第二环形形状的径向方向所测量的共同宽度尺寸。
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