CN107895683B - 具有改良轮廓的双通道喷淋头 - Google Patents

具有改良轮廓的双通道喷淋头 Download PDF

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CN107895683B
CN107895683B CN201710833620.7A CN201710833620A CN107895683B CN 107895683 B CN107895683 B CN 107895683B CN 201710833620 A CN201710833620 A CN 201710833620A CN 107895683 B CN107895683 B CN 107895683B
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D·卢博米尔斯基
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Abstract

公开了一种具有改良轮廓的双通道喷淋头。所描述的处理腔室可包括腔室外壳，所述腔室外壳至少部分限定半导体处理腔室的内部区域。腔室可包括底座。腔室可包括定位在盖与处理区域之间的第一喷淋头，并且可包括定位在第一喷淋头与处理区域之间的面板。腔室也可包括定位在半导体处理腔室的面板与处理区域之间的所述腔室内的第二喷淋头。第二喷淋头可包括耦合在一起的至少两个板以限定在所述至少两个板之间的容积。所述至少两个板可至少部分限定通过第二喷淋头的通道，并且每个通道可由在所述通道的第一末端处的第一直径表征并可由在所述通道的第二末端处的多个端口表征。

Description

具有改良轮廓的双通道喷淋头
技术领域
本申请 主张于2016年10月4日申请并且标题为“DUAL-CHANNEL SHOWERHEAD WITHIMPROVED PROFILE”的美国专利申请 No.15/285,331的权益，所述美国专利申请 全文出于全部目以引用方式并入本文中。
本技术涉及半导体系统、工艺和设备。更具体来说，本技术涉及可包括喷淋头的处理腔室，所述喷淋头可用作等离子体电极。
背景技术
集成电路可能通过在基板表面上产生复杂图案化的材料层的工艺制成。在基板上产生图案化材料需要用于移除已暴露材料的受控方法。化学蚀刻用于各种目的，所述目的包括将光刻胶中的图案转移至下层、减薄层、或减薄已经存在于表面上的特征的横向尺寸。通常期望具有与另一种材料相比更快地蚀刻一种材料的蚀刻工艺，进而促进例如图案转移工艺。认为此蚀刻工艺对第一种材料具有选择性。由于材料、电路、和工艺的多样性，已经开发了对各种材料具有选择性的蚀刻工艺。
蚀刻工艺、沉积工艺和清洁工艺可在各种腔室中进行。这些腔室可包括组件，所述组件可用以形成电容耦合的等离子体，或可能靠近产生其他形式的等离子体的内部腔室区域，诸如电感耦合的等离子体。腔室组件可能以某些方式配置以减少等离子体产生或通过腔室的前驱物分配的影响，但这可能以额外功能为代价。
因此，需要可用以产生高品质装置和结构的改良的系统和方法。这些和其他需求通过本技术解决
发明内容
本技术的半导体处理系统和方法可包括半导体处理腔室，所述腔室包括至少部分限定半导体处理腔室的内部区域的腔室外壳，并且所述腔室外壳可包括盖。腔室可包括被配置以在半导体处理腔室的处理区域内支撑基板的底座。腔室可包括定位在盖与处理区域之间的第一喷淋头，并且可包括定位在半导体处理腔室的第一喷淋头与处理区域之间的面板。腔室也可包括定位在半导体处理腔室的面板与处理区域之间的腔室内的第二喷淋头。第二喷淋头可包括耦合在一起的至少两个板以限定在所述至少两个板之间的容积。至少两个板可至少部分限定通过第二喷淋头的通道，并且每个通道可由在通道的第一末端处的第一直径表征，并可由在通道的第二末端处的多个端口表征。
在实施例中，每个端口可由小于第一直径的直径表征。另外，第一喷淋头可与电源耦合，并且面板可与电气接地耦合。示例性半导体处理腔室也可包括在第一喷淋头与面板之间的间隔件。第一喷淋头、面板和间隔件可被配置以至少部分限定在半导体处理腔室内的等离子体处理区域。在一些实施例中，底座可与电源耦合，并且第二喷淋头可与电气接地耦合。底座和第二喷淋头可被配置以至少部分限定在半导体处理腔室的处理区域内的等离子体处理区域。在实施例中，面板与第二喷淋头可直接接触，并且面板和第二喷淋头都可与电气接地耦合。
第二喷淋头可定位在腔室内，所述第二喷淋头具有面对面板的每个通道的第一末端，并具有靠近半导体处理腔室的处理区域的每个通道的第二末端。另外，第二喷淋头可定位在腔室内，所述第二喷淋头具有靠近半导体处理腔室的处理区域的每个通道的第一末端，并具有面对面板的每个通道的第二末端。第二喷淋头的表面可邻近半导体处理腔室的处理区域，并且可涂覆或处理所述表面。在一些实施例中，第一直径可以是至少约2.5 mm，并且每个端口的直径可以小于或约1.2mm。
本技术也涵盖喷淋头。喷淋头可包括限定多个通孔的第一板。喷淋头也可包括与第一板耦合的第二板。第二板可限定第一多个孔和第二多个孔，并且第二多个孔可被限定在多组孔中的第二板中，所述多组孔包括第二多个孔中的至少两个孔。在一些实施例中，第一板的每个通孔可与至少一组孔对准以产生通道。
在实施例中，第一板与第二板可彼此耦合以限定在所述第一板与所述第二板之间的容积。容积可从第二板的第一多个孔流体接入，并且通道可与在第一板与第二板之间限定的容积流体隔离。第一多个孔可被限定在多个第一组孔中的第二板中，所述多个第一组孔包括第一多个孔中的至少两个孔，并且每个第一组孔可围绕第二多个孔中的一组孔。在一些实施例中，每个第一组孔可包括至少4个孔。在一些实施例中，每个通孔可由至少约5mm的直径表征。第二多个孔的每个孔可由小于或约1mm的直径表征。第二多个孔的每组孔可包括至少约6个孔。在一些实施例中，第二板可包括耐等离子体劣化的材料。
本技术也可涵盖喷淋头，所述喷淋头可包括限定第一多个孔的第一板。第一多个孔可被限定在多组孔中的第一板中，所述多组孔包括第一多个孔的至少两个孔。喷淋头也可包括与第一板耦合的第二板。第二板可限定第二多个孔和多个通孔，并且第二板的每个通孔可与第一多个孔的至少一组孔对准以产生通道。
此技术可提供优于传统系统和技术的数个优点。例如，本技术的喷淋头可提供改良的接地路径，从而可限制等离子体泄漏。另外，喷淋头可限制反应副产物回流并接触其他腔室组件。结合以下描述和附图更详细地描述这些和其他实施例，连同众多其优点和特征。
附图说明
可通过参考说明书的剩余部分和附图实现对所公开的技术的性质和优点的进一步理解。
图1示出了根据本技术的实施例的示例性处理系统的俯视平面图。
图2示出了根据本技术的实施例的示例性处理腔室的示意性横截面图。
图3示出了根据所公开技术的实施例的示例性喷淋头的仰视平面图。
图4示出了根据所公开技术的实施例的示例性面板的平面图。
图5示出了根据本技术的实施例的处理腔室的横截面图。
图6A示出了根据本技术的实施例的示例性喷淋头的俯视平面图。
图6B示出了根据本技术的实施例的示例性喷淋头的仰视平面图。
图7A示出了根据本技术的实施例的示例性喷淋头的横截面图。
图7B示出了根据本技术的实施例的示例性喷淋头的横截面图。
图8A示出了根据本技术的实施例的示例性喷淋头的俯视平面图。
图8B示出了根据本技术的实施例的示例性喷淋头的仰视平面图。
图9示出了根据本技术的实施例的示例性方法的操作。
包括作为示意图的数个图。应理解，附图是出于说明性目的，并且不应视为按比例，除非具体声明为按比例。另外，作为示意图，提供附图以帮助理解并且与实际表示相比所述附图可能不包括全部方面或信息，并且出于说明性目的所述附图可能包括额外或夸大的材料。
在附图中，相似部件和/或特征可能具有相同参考标记。进一步地，相同类型的各个部件可用参考标记后加上区别相似部件的字母来区别。若在说明书中仅使用第一参考标记，则无论字母如何，描述可应用至具有相同第一参考标记的相似部件的任何一个。
具体实施方式
本技术包括用于半导体处理的系统和组件，所述半导体处理包括调整的蚀刻工艺。某些可用的处理腔室可包括多个等离子体机构，诸如于晶片水平的等离子体机构以及远程等离子体源。晶片水平的等离子体可通常经由在两个电极之间形成的电容耦合等离子体形成。这些电极的一个或两个可能是或包括额外腔室组件，诸如喷淋头、底座或腔室壁。喷淋头可以任何数量方式配置以影响前驱物分配，并且也可在等离子体产生中用作电极。然而，用以改良在处理腔室中的流动轮廓的喷淋头配置可影响作为电极的喷淋头性能。
例如，通过喷淋头增加的孔直径可允许改良自由基重组以及通过喷淋头的流动均匀性。另一方面，若喷淋头也作为电极操作，增加的孔直径可允许通过喷淋头的等离子体泄漏，等离子体可随后与其他组件相互作用。对于晶片水平等离子体，较大孔直径也可允许来自蚀刻或沉积反应的反应副产物通过孔回流并与其他腔室组件接触、沉积或反应。
传统技术可能以数种方式处理这些现象。在一个实例中，额外板或喷淋头包括在处理区域中以防止或减少通过所述喷淋头的任何材料回流。然而，此部件可增加用于前驱物的腔室流动路径。对于通过腔室行进的自由基前驱物，这可能允许发生重组或能量损失，此举可降低前驱物或等离子体流出物的有效性。本技术可通过提供改良的喷淋头来克服这些缺陷，所述喷淋头可用于半导体处理腔室中，包括用于晶片水平的等离子体产生。喷淋头可包括具有在一个末端增加的直径的通道以允许足够的前驱物流动，并且可包括于相对末端的端口以防止等离子体和反应副产物通过喷淋头流回。这些设计可保护其他腔室组件，同时也限制对自由基重组速率的影响。
尽管剩余公开内容将例行标识采用所公开技术的具体蚀刻工艺，将容易理解的是，系统和方法可等效地应用至可在所描述腔室中发生的沉积和清洁工艺。由此，本技术不应被视为限制为单独用于蚀刻工艺。
图1示出了根据实施例的沉积、蚀刻、烘烤和固化腔室的处理系统100的一个实施例。图1所描绘的处理工具100可含有多个处理腔室114A-D、转移腔室110、检修腔室 116、集成度量腔室117和一对负载锁定腔室106A-B。处理腔室可包括与关于图2所描述的那些类似的结构或部件，以及额外的处理腔室。
为了在腔室间输送基板，转移腔室110可含有机器输送机构113。输送机构113可具有分别附接至可延伸臂113B的远端的一对基板输送叶片113A。叶片113A可用于将各个基板运载至处理腔室并且自所述处理腔室运载各个基板。在操作中，基板输送叶片中的一个(诸如输送机构113的叶片113A)可从负载锁定腔室(诸如腔室106A-B)中的一个取回基板W并且将基板W运载至第一处理阶段，例如，在腔室114A-D中如下文所描述的蚀刻工艺。若所述腔室已被占用，则机器人可等到处理完成并且随后使用一个叶片113A从所述腔室移除已处理的基板并且可使用第二叶片(未示出)插入新的基板。一旦已处理了基板，所述基板可随后移动至第二处理阶段。对于各次移动，输送机构113一般可具有运载基板的一个叶片和用以执行基板交换的一个空的叶片。输送机构 113可于每个腔室处等待直到可实现交换。
一旦在处理腔室内完成处理，输送机构113可从最后处理腔室移动基板W，并将基板W输送至负载锁定腔室106A-B内的盒。基板可从负载锁定腔室106A-B移动至工厂接口104中。工厂接口104一般可操作以在大气压清洁环境中的箱装载器105A-D与负载锁定腔室106A-B之间转移基板。工厂接口104中的清洁环境可一般通过空气过滤工艺(诸如例如HEPA过滤)提供。工厂接口104也可包括在处理之前可用以适当地对准基板的基板定向器/对准器(未示出)。至少一个基板机器人，诸如机器人108A-B，可定位在工厂接口104中以在工厂接口104内的各个地方/位置之间输送基板并且输送至与其连通的其他位置。机器人108A-B可被配置以沿着从工厂接口104的第一末端至第二末端的壳体104内的轨道系统运动。
处理系统100可进一步包括集成度量腔室117以提供控制信号，所述控制信号可提供对在处理腔室中进行的工艺中的任一个的自适应控制。集成度量腔室117可包括各种度量装置中的任一个以测量各种膜性质，诸如厚度、粗糙度、组成，并且度量装置可进一步能够以自动方式表征光栅参数，诸如在真空下的临界尺寸、侧壁角度和特征高度。
现转到图2，示出了根据本技术的示例性处理腔室系统200的横截面图。腔室200可例如用于先前所论述的系统100的处理腔室部分114的一或更多个中。一般来说，蚀刻腔室200可包括用以实施离子研磨操作的第一电容耦合的等离子体源和用以实施蚀刻操作并实施可选沉积操作的第二电容耦合的等离子体源。腔室200可包括围绕夹盘250 的接地腔室壁240。在实施例中，夹盘250可能是静电夹盘，所述静电夹盘在处理期间将基板202夹持至夹盘250的顶表面，但是也可采用已知的其他夹持机构。夹盘250可包括嵌入式热交换器线圈217。在示例性实施例中，热交换器线圈217包括一或更多个传热流体通道，传热流体(诸如乙二醇/水混合物)可通过所述传热流体通道传递以控制夹盘250的温度及最终控制基板202的温度。
夹盘250可包括耦合至高压DC电源248的网孔249使得网孔249可携带DC偏压电位以实施基板202的静电夹持。夹盘250可与第一RF功率源耦合并且在一个此实施例中，网孔249可与第一RF功率源耦合使得DC电压偏移和RF电压电位均跨过夹盘 250的顶表面上的薄介电层耦合。在说明性实施例中，第一RF功率源可包括第一和第二RF发生器252、253。RF发生器252、253可于任何工业上采用的频率操作，然而在示例性实施例中，RF发生器252可于60MHz操作以提供有利方向性。如果也提供第二 RF发生器253，示例性频率可能是2MHz。
在对夹盘250作RF供电的情况下，RF返回路径可由第一喷淋头225提供，所述第一喷淋头可包括双通道喷淋头。第一喷淋头225可设置在夹盘上方以将第一馈送气体分配至由第一喷淋头225和腔室壁240限定的第一腔室区域284中。因此，夹盘250和第一喷淋头225形成第一RF耦合电极对以在第一腔室区域284内电容激励第一馈送气体的第一等离子体270。源自RF供电的夹盘的电容耦合的DC等离子体偏压或RF偏压可产生从第一等离子体270至基板202的离子通量(例如，Ar离子，其中第一馈送气体是 Ar)，以提供离子研磨等离子体。第一喷淋头225可接地或替代地与RF源228耦合，所述RF源具有可于与夹盘250的频率不同的频率(例如，13.56MHz或60MHz)操作的一或更多个发生器。在所示出的实施例中，第一喷淋头225可选择地通过继电器227耦合至地面或RF源228，所述继电器可在蚀刻工艺期间自动地受控，例如由控制器(未图示)来控制。在所公开的实施例中，腔室200可以不包括喷淋头225或介电间隔件220，并且可替代地仅包括下文进一步描述的挡板215和喷淋头210。
如在图中进一步示出，蚀刻腔室200可包括于低工艺压力下能够具有高通量的泵堆叠。在实施例中，至少一个涡轮分子泵265、266可通过一或更多个闸阀260与第一腔室区域284耦合并且设置在夹盘250下方，与第一喷淋头225相对。涡轮分子泵265、 266可能是任何市售泵，所述市售泵具有适宜通量并且更具体来说可适当地调整大小以于第一馈送气体的期望流速(例如，氩气是第一馈送气体的情况下为50至500sccm Ar) 维持工艺压力低于或约10mTorr或者低于或约5mTorr。在所示出的实施例中，夹盘250 可形成位于两个涡轮泵256与266之间的中心处的底座的部分，然而，在替代配置中，夹盘250可能在从腔室壁240悬挂出的底座上，所述腔室壁具有单个涡轮分子泵，所述涡轮分子泵具有与夹盘250的中心对准的中心。
设置在第一喷淋头225上方的可以是第二喷淋头210。在一个实施例中，在处理期间，第一馈送气体源，例如，从气体分配系统290递送的氩气可与气体入口276耦合，并且通过多个孔280流动的第一馈送气体通过第二喷淋头210延伸至第二腔室区域281 中，并且通过多个孔282流动的第一馈送气体通过第一喷淋头225延伸至第一腔室区域 284中。额外流动分配器或具有孔278的挡板215可通过分配区域218来进一步跨蚀刻腔室200的直径分配第一馈送气体流216。在替代实施例中，第一馈送气体可经由孔283 直接流至第一腔室区域284中，所述孔如由虚线223指示与第二腔室区域281隔离。
腔室200可额外从所示出的状态重新配置以进行蚀刻操作。二级电极205可设置在第一喷淋头225上方，其间具有第二腔室区域281。二级电极205可进一步形成蚀刻腔室200的盖或顶板。二级电极205与第一喷淋头225可通过介电环220电气隔离并且形成第二RF耦合电极对以在第二腔室区域281内电容放电第二馈送气体的第二等离子体 292。有利地，第二等离子体292可能不在夹盘250上提供显著RF偏压电位。第二RF 耦合电极对的至少一个电极可与RF源耦合以用于激励蚀刻等离子体。二级电极205可与第二喷淋头210电气耦合。在示例性实施例中，第一喷淋头225可与接地面耦合或浮置，并且可通过继电器227耦合至接地，进而在操作的离子研磨模式期间允许第一喷淋头225也由RF功率源228供电。在第一喷淋头225接地的情况下，具有于13.56MHz 或60MHz操作的一或更多个RF发生器的RF功率源208，例如，可通过继电器207与二级电极205耦合，这可允许在其他可操作模式期间(诸如在离子研磨操作期间)二级电极205也接地，但是若对第一喷淋头225供电，则二级电极205也可保持浮置。
第二馈送气体源(诸如三氟化氮)和氢源(诸如氨)可从气体分配系统290递送，并且与气体入口276耦合，诸如经由虚线224。在此模式中，第二馈送气体可通过第二喷淋头210流动并且可在第二腔室区域281中被激励。反应性物质可随后被传递至第一腔室区域284中以与基板202反应。如进一步示出，针对其中第一喷淋头225是多通道喷淋头的实施例，可提供一或更多个馈送气体以与由第二等离子体292产生的反应性物质反应。在一个此实施例中，水源可与多个孔283耦合。额外配置也可基于提供的一般说明，但具有重新配置的各种部件。例如，流动分配器或挡板215可以是与第二喷淋头 210类似的板，并且可定位在二级电极205与第二喷淋头210之间。
由于这些板的任一个在各种配置中可作为电极操作以用于产生等离子体，一或更多个环形或其他形状间隔件可定位在一或更多个与介电环220类似的这些部件之间。第二喷淋头210在实施例中也可作为离子抑制板操作，并且可被配置以减少、限制、或抑制离子物质通过第二喷淋头210流动，同时仍允许中性和自由基物质流动。一或更多个额外喷淋头或分配器可被包括在第一喷淋头225与夹盘250之间的腔室中。此喷淋头可采取先前所描述的分配板或结构的任一个的形状或结构。此外，在实施例中，远程等离子体单元(未示出)可与气体入口耦合以将等离子体流出物提供至用于各种工艺的腔室。
在实施例中，夹盘250可在垂直于第一喷淋头225的方向中沿着距离H2移动。夹盘250可以在由风箱255或类似者围绕的致动机构上，以允许夹盘250移动至更靠近第一喷淋头225或离所述第一喷淋头更远，所述第一喷淋头作为在夹盘250与第一喷淋头 225之间控制传热的手段，可处于80℃-150℃的高温，或更高。因此，蚀刻工艺可通过相对于第一喷淋头225在第一与第二预定位置之间移动夹盘250来实施。或者，夹盘250 可包括升降器251以将基板202抬离夹盘250的顶表面距离H1，进而在蚀刻工艺期间控制第一喷淋头225的加热。在其他实施例中，例如在蚀刻工艺于固定温度(诸如约 90-110℃)进行的情况下，可避免夹盘移位机构。系统控制器(未示出)可在蚀刻工艺期间通过自动地交替对第一和第二RF耦合电极对供电来交替地激励第一和第二等离子体270和292。
腔室200也可被重新配置以进行沉积操作。等离子体292可在第二腔室区域281中通过RF放电产生，所述RF放电可以针对第二等离子体292所描述的任何方式来实施。如果对第一喷淋头225供电以在沉积期间产生等离子体292，第一喷淋头225可通过介电间隔件230与接地腔室壁240隔离，以便相对于腔室壁电气浮置。在示例性实施例中，氧化剂馈送气体源(诸如分子氧)可从气体分配系统290递送，并且与气体入口276耦合。在其中第一喷淋头225是多通道喷淋头的实施例中，任何含硅前驱物(诸如OMCTS) 例如可从气体分配系统290递送，并且被引导至第一腔室区域284中以与通过第一喷淋头225从等离子体292传递的反应性物质反应。或者含硅前驱物连同氧化剂也可通过气体入口276流动。包括作为一般腔室配置的腔室200，所述腔室配置可用于参考本技术论述的各种操作中。
图3是根据实施例与处理腔室一起使用的喷淋头325的仰视图。喷淋头325可与图2所示的喷淋头225对应。可以是第一流体通道或孔282的视图的通孔365可具有多个形状和配置以控制并影响前驱物通过喷淋头225的流动。可以是第二流体通道或孔283 的视图的小孔375可实质上均匀地分布在喷淋头的表面上方(甚至在通孔365中)，并且在所述前驱物离开喷淋头时可提供比其他配置更均匀的对前驱物的混合。
图4示出了根据实施例用于面板的排列。如图所示，面板400可包括多孔板或歧管。面板的组件可与图3所示的喷淋头类似，或者可包括被具体配置以用于前驱物气体的分配图案的设计。面板400可包括环形框架410，所述框架定位在示例性处理腔室(诸如图2所示的腔室)内的各种排列中。可在框架上或在框架内耦合板420，所述板可在实施例中与如下描述的离子抑制器板523类似。在实施例中，面板400可以是单片设计，其中框架410和板420是单片材料。
板可具有圆盘形状并且被安置在框架410上或在所述框架内。板可以是导电材料(诸如包括铝的金属)，以及允许板用作电极的其他导电材料，所述电极用于先前所描述的等离子体排列中。板可具有各种厚度，并且可包括在所述板内限定的多个孔465。如图 4所示的示例性排列可包括如先前参考图3的排列所描述的图案，并且可包括以几何图案(诸如所示的六边形)的孔的一系列环。应理解，所示出的图案是示例性的并且应理解各种图案、孔排列、和孔间隔涵盖在设计中。
孔465可调整大小或被另外配置以在操作期间允许流体通过所述孔流动。孔可在各个实施例中调整大小为小于约2英寸，并且可小于或约1.5英寸、约1英寸、约0.9英寸、约0.8英寸、约0.75英寸、约0.7英寸、约0.65英寸、约0.6英寸、约0.55英寸、约0.5英寸、约0.45英寸、约0.4英寸、约0.35英寸、约0.3英寸、约0.25英寸、约0.2 英寸、约0.15英寸、约0.1英寸、约0.05英寸、约0.04英寸、约0.035英寸、约0.03 英寸、约0.025英寸、约0.02英寸、约0.015英寸、约0.01英寸、等等、或更小。
在一些实施例中，面板400可作为离子抑制器操作，所述离子抑制器限定在被配置以抑制带离子电荷的物质迁移出腔室等离子体区域同时允许不带电的中性或自由基物质通过离子抑制器传递至离子抑制器下游的活化气体递送区域中的整个结构中的多个孔。在实施例中，离子抑制器可以是具有多个孔配置的多孔板。这些不带电的物质可包括使用较低反应性载剂气体通过孔输送的高度反应性物质。如上文提及，可减少并且在一些实例中完全抑制离子物质通过孔的迁移。例如，可控制孔的长宽比、或孔直径与长度比、和/或孔的几何形状使得减少在活化气体中带离子电荷的物质穿过离子抑制器的流动。
转到图5，示出了根据本技术的处理系统500的简化示意图。系统500的腔室可包括先前关于图2至图4所论述的组件的任一个，并且可被配置以在腔室的处理区域533 中容纳半导体基板555。腔室外壳503可至少部分限定腔室的内部区域。例如，腔室外壳503可包括盖502，并且可至少部分包括在图中示出的其他板或部件中的任一个。例如，腔室部件可作为一系列堆叠的部件包括在内，其中每个部件至少部分限定腔室外壳 503的一部分。基板555可位于如图所示的底座565上。处理腔室500可包括与入口501 耦合的远程等离子体单元(未示出)。在其他实施例中，系统可不包括远程等离子体单元。
在具有或不具有远程等离子体单元的情况下，系统可被配置以通过入口501接收前驱物或其他流体，所述入口可提供对处理腔室的混合区域511的通路。混合区域511可与腔室的处理器区域560分离并且可与所述处理区域流体耦合。混合区域511可由系统 500的腔室的顶部(诸如腔室盖502或盖组件)至少部分限定，所述盖组件可包括用于一或更多个前驱物的入口组件和分配装置，诸如下文的面板509。面板509可在所公开的实施例中与图3至图4中示出的喷淋头或面板类似。面板509可包括多个通道或孔507，所述通道或孔可在通过腔室之前定位和/或改变形状以影响前驱物在混合物区域511中的分配和/或滞留时间。
例如，重组可通过调节跨过面板509的孔数量、孔大小、或孔配置影响或控制。如图所示，面板509可定位在腔室的混合区域511与处理区域560之间，并且面板509可被配置以通过腔室500分配一或更多个前驱物。腔室500可包括一系列部件的一或更多个，所述部件可选地被包括在所公开的实施例中。例如，尽管描述了面板509，在一些实施例中，腔室可不包括此面板。在所公开的实施例中，在混合物区域511中至少部分混合的前驱物可经由系统的操作压力、腔室部件的排列、或前驱物的流动轮廓的一或更多个引导通过腔室。
腔室500可另外包括第一喷淋头515。喷淋头515可具有关于图3至图4所论述的板的特征或特性的任一个。喷淋头515可定位在如图所示的半导体处理腔室内，并且可被包括或定位在盖502与处理区域560之间。在实施例中，喷淋头515可能是或包括金属或导电部件，所述部件可能是被涂覆、调理(season)、或以其他方式处理的材料。示例性材料可包括金属(包括铝)，以及金属氧化物(包括氧化铝)。根据所采用的前驱物、或在腔室内进行的工艺，喷淋头可以是任何其他金属或材料，所述金属或材料可提供可采用的结构稳定性以及导电性。
喷淋头515可限定一或更多个孔517以促进前驱物通过喷淋头均匀分配。孔517可被包括在各种配置或图案中，并且可由任何数量的几何形状表征，所述几何形状可提供所期望的前驱物分配。喷淋头515在实施例中可与功率源电气耦合。例如，喷淋头515 可与如图所示的RF源519耦合。当操作时，RF源519可提供电流给喷淋头515以允许电容耦合的等离子体(“CCP”)形成在喷淋头515与另一部件之间。
附加的面板或装置523可设置在喷淋头515下方。面板523可包括与面板509类似的设计，并且可具有与图3或图4所示出者类似的排列。在实施例中，面板523可定位在喷淋头515与处理区域560之间的半导体处理腔室内。间隔件510可定位在喷淋头515 与板523之间，并且可包括介电材料。孔524可被限定在板523中，并且可被分配并配置以影响离子物质通过板523的流动。例如，孔524可被配置以至少部分抑制朝向处理区域560引导的离子物质的流动，并且可允许板523作为如先前所描述的离子抑制器操作。孔524可具有包括如先前所论述的通道的各种形状，并且可包括在所公开的实施例中远离处理区域560向外延伸的锥形部分。
面板523可与电气接地534耦合，此举可允许在实施例中产生等离子体。例如，喷淋头515、面板523和间隔件510可至少部分限定在半导体处理腔室内的等离子体处理区域533。前驱物可通过入口501提供并且通过面板509和喷淋头515分配至等离子体处理区域533。喷淋头515可相对于面板523处的接地带电，并且前驱物可被激励以在等离子体处理区域533内产生等离子体。等离子体流出物可随后通过面板523朝向处理区域560流动以与基板或晶片555或基板上的材料相互作用。
腔室500可在腔室内进一步包括气体分配组件535，所述气体分配组件也可以是第二喷淋头。例如，气体分配组件535可至少部分限定处理区域560，并且可将前驱物分配至所述区域。为了在基板555上提供均匀处理，气体分配组件535可被配置以提供前驱物更均匀地流至处理区域560中。可在各个方面与如先前所描述的双通道喷淋头类似的气体分配组件535可位于在处理区域560上方的腔室内，诸如在处理区域560与盖502 之间，并且可定位在处理区域560与面板523之间。气体分配组件535可被配置以将第一和第二前驱物均递送至腔室的处理区域560中。在实施例中，气体分配组件535可将腔室的内部区域至少部分分为远程区域和其中定位基板的555的处理区域。
尽管图5的示例性系统包括双通道喷淋头，应理解可采用替代分配部件，所述替代分配部件维持与通过入口501引入的物质流体隔离的前驱物。例如，可采用多孔板和在所述板下面的管，但是其他配置可以降低的效率操作或者可不作为如所描述的双通道喷淋头的均匀处理提供。通过采用所公开的设计之一，可将前驱物引入处理区域560中，所述前驱物在进入处理区域560之前未由等离子体先前激发，或者可引入所述前驱物以避免接触所述前驱物可与之反应的额外前驱物。尽管未图示，附加的间隔件诸如环形间隔件可定位在面板523与喷淋头535之间以使所述板彼此隔离。在其中可不包括附加前驱物的实施例中，气体分配组件535可具有与先前所描述的部件的任一个类似的设计，并且可包括与图4所示出的面板类似的特性。
在实施例中，气体分配组件535可包括嵌入式加热器539，例如所述加热器可包括电阻式加热器或温度可控流体的通道。气体分配组件535可在实施例中包括上部板和下部板，并且可包括彼此耦合的多个板，根据在气体分配组件535内的配置或间隔，所述板可包括大于或约2个板、大于或约3个板、大于或约4个板、大于或约5个板、或更多。板可彼此耦合以限定在所述板之间的容积537。板的耦合可诸如用以提供通过上部和下部板的第一流体通道540并且提供通过下部板的第二流体通道545。第二形成的通道可被配置以从容积537通过下部板提供流体通路，并且第一流体通道540可与在板与第二流体通道545之间与容积537流体隔离。容积537可通过气体分配组件535(诸如先前所论述的通道223)的侧面流体接入。通道可与腔室中的通路耦合，所述腔室中的通路与腔室500的入口501分离。
气体分配组件535也可用于等离子体处理操作中，并且例如在实例中可与源或电气接地(诸如电气接地544)电气耦合。通过耦合气体分配组件535与电气接地，气体分配组件535可具有与面板523类似的电位，并且因此可防止等离子体在两个部件之间形成。在一些实施例中，面板523和气体分配组件535可如示出直接接触，并且均可与电气接地耦合。底座565可与电源554耦合，与接地的气体分配组件535结合的所述电源可至少部分限定在半导体处理腔室的处理区域560内的附加等离子体处理区域。通过提供于晶片水平的等离子体处理能力，可进行附加操作，诸如如先前所论述的材料修改，以及可得益于等离子体处理的蚀刻和沉积操作。
在一些实施例中，如上文所描述的等离子体可在远离处理区域的腔室区域中形成，诸如在等离子体处理区域533中，以及在处理区域560内的等离子体处理区域内。这些等离子体区域各者在实施例中可以是电容耦合的等离子体配置，但是可包括其他等离子体产生部件(诸如线圈)以提供电感耦合的等离子体区域。各者可与等离子体接触的面板、喷淋头、腔室壁、间隔件、和底座可能被另外涂覆或调理以最小化部件劣化，在所述部件之间可形成等离子体。板可另外包括较不可能劣化或受影响的组成物，包括陶瓷、金属氧化物、或其他导电材料。
操作传统电容耦合的等离子体(“CCP”)可能会劣化腔室部件，此举可移除在基板上无意地分配的粒子。这些粒子可能影响由这些基板形成的装置的性能，因为金属离子可提供跨过半导体基板的短路。然而，所公开技术的CCP可在实施例中于降低或实质上降低的功率操作，并且可用以维持可由远程等离子体单元产生的等离子体，而非在等离子体区域内的电离物质。在其他实施例中，可操作CCP以电离递送至这个区域中的前驱物。例如，CCP可于低于或约1kW、500W、250W、100W、50W、20W、等等，或更低的功率水平操作。此外，CCP可产生平坦等离子体轮廓，所述轮廓可在空间内提供均匀等离子体分配。如此，等离子体流出物的更均匀流动可在下游递送至腔室的处理区域。
于晶片水平形成等离子体可有益于如先前所论述的处理操作。然而，当部件(诸如气体分配组件535)作为部分等离子体处理设备并入时，可能涉及对等离子体形成的额外考虑。可包括第一流体通道540以允许将等离子体流出物提供至腔室区域。为了提供足够流动并减少与等离子体流出物相互作用，通道可例如由增加的直径(诸如大于或约 2.5mm)表征。然而，当气体分配组件535涉及电容耦合的等离子体操作时，这些孔大小可能会带来问题。
例如，等离子体可一般在长度大于德拜(Debye)长度的区域中形成。当第一流体通道 540由增加的直径表征时，则面对等离子体处理区域的组件的表面可能不提供跨过表面的RF连续性。因此，等离子体可在第一流体通道540内产生，并且也可通过这些通道朝向面板523回漏。气体分配组件535的一或更多个表面可能被涂覆或处理以减少来自等离子体的劣化。类似地，面板523的一或更多个表面可能被涂覆或处理以减少来自等离子体的劣化。然而，在各个部件上涂覆或处理的表面可能不彼此面对。
例如，如图5示出，可处理面对、靠近、或邻近处理区域560的气体分配组件535 的表面，但可不涂覆或处理面对面板523的表面。类似地，可涂覆或处理面对、靠近、或邻近等离子体处理区域533的面板523的表面，但可不涂覆或处理面对气体分配组件 535的表面。由此，泄漏至面板523与气体分配组件535之间的区域中的等离子体可能能够劣化部件的未处理部分。尽管第一流体通道540的直径可减少以防止此相互作用，此减少可增加与在等离子体处理区域533中产生的等离子体流出物重组和相互作用。另一种解决方案可包括并入附加的喷淋头，所述喷淋头具有在气体分配组件535与底座565 之间的较小孔以减少等离子体回流。然而，此解决方案在某些情况下可能是不可接受的，因为前驱物行进长度增加，并且因为附加的喷淋头可产生使用气体分配组件所避免的相同重组。例如，在某些沉积操作中，可控制某些前驱物(诸如三甲硅烷基胺或者NH自由基或离子)的滞留时间以提供可接受沉积，并且流动路径可相对不受阻碍以防止在部件上的沉积。通过结合附加的喷淋头，可增加流动路径长度，且可阻碍流动路径。
由此，本技术可通过调节第一流体通道540本身改良这些情况。例如，根据本技术的喷淋头或气体分配组件可包括流体通道，其中各个通道可由在通道的第一末端处的第一直径表征，并可由在通道的第二末端处的多个端口表征。下图将论述示例性喷淋头或根据本技术可在腔室内使用的气体分配组件，诸如例如可用作腔室500的气体分配组件 535。喷淋头也可用于包括其他等离子体腔室的任何其他腔室中，所述腔室可得益于在本公开全文中论述的改良的控制。
图6A示出了根据本技术的实施例的示例性喷淋头600的俯视平面图。喷淋头600可包括在本公开全文中论述的先前喷淋头或面板中的任一个的部件或特性的任一个。如图所示，喷淋头600可包括第一板610，所述第一板限定跨第一板610表面的多个通孔 620。第一板610可以是或包括导电材料，所述导电材料可包括铝、氧化铝、其他金属、其他金属氧化物(诸如，例如氧化钇)，或其他处理或涂覆的材料。例如，通孔620可示出如先前所描述的第一流体通道540的第一末端。例如，通孔620可由小于或约50mm 的直径表征，并且在实施例中可由小于或约40mm，小于或约30mm、小于或约20mm、小于或约15mm、小于或约12mm、小于或约10mm、小于或约9mm、小于或约8mm、小于或约7mm、小于或约6mm、小于或约5mm、小于或约4mm、小于或约3mm、小于或约2mm，或更小的直径表征。
通孔620在实施例中可由大于或约4mm的直径表征，以提供前驱物的足够流动能力。例如，小于或约5mm的直径可影响通过腔室流动的前驱物(包括在腔室的远程区域中产生的等离子体流出物)的重组或其他特性。由此，在一些实施例中，可维持通孔 620的直径大于或约2.5mm、大于或约3mm、大于或约3.5mm、大于或约4mm、大于或约4.5mm、大于或约5mm、大于或约5.5mm、大于或约6mm、大于或约6.5mm、大于或约7mm、或者更大以防止对前驱物或等离子体流出物产生更大影响。直径也可以是所提供或涵盖的数量的任一个的组合，并且可以是包括在限定范围的任一个内的范围。根据喷淋头600和孔620的大小，第一板610可限定小于、大于、或约500个孔，并且在实施例中可限定小于、大于、或约1,000个孔、约2,000个孔、约3,000个孔、约 4,000个孔、约5,000个孔、约6,000个孔、约7,000个孔、约8,000个孔、约9,000个孔、约10,000个孔、或更多。
通孔620也可提供通过所形成的通道至第二板650的视图，所述第二板可与第一板610耦合。在一些实施例中，喷淋头600可包括具有限定特征的大于两个板、或仅单个板。第二板650可包括如通过第一板610的通孔620观察到的限定的端口660。转到图 6B示出了根据本技术的实施例的示例性喷淋头600的仰视平面图。附图示出了喷淋头 600的第二板650的视图。如所提及，第二板650可包括在整个第二板650中限定的端口660，所述端口可被包括在通过喷淋头600产生的流体通道的第二末端处。在实施例中，各个端口660可由直径表征，所述直径小于通孔620的直径。
如先前所解释，端口660可防止等离子体通过喷淋头600泄漏并且也可防止局部等离子体操作的副产物通过喷淋头600在上游流动。由此，端口660在实施例中可由小于或约2mm的直径表征，并且在实施例中可由小于或约1.5mm、小于或约1.2mm、小于或约1.0mm、小于或约0.9mm、小于或约0.8mm、小于或约0.7mm、小于或约0.6mm、小于或约0.5mm、小于或约0.4mm、小于或约0.3mm、小于或约0.2mm、小于或约 0.1mm、或更小的直径表征。例如，端口660在实施例中可由约0.1mm与约1.2mm之间的直径表征，并在实施例中可由约0.2mm与约1mm之间的直径表征。较小端口660 可提供跨喷淋头600的改良的RF连续性，例如所述喷淋头可作为接地电极操作。改良的RF连续性在实施例中可允许在喷淋头600下方含有等离子体，或在喷淋头600下方实质上含有等离子体。另外，较小端口660也可防止反应副产物通过通孔620向上流动并接触附加的部件。
如图所示，端口660可被限定在跨板650表面的端口组中。各组端口在实施例中可包括至少或约2个端口，并且在实施例中可包括至少或约3个端口、至少或约4个端口、至少或约5个端口、至少或约6个端口、至少或约7个端口、至少或约8个端口、至少或约9个端口、至少或约10个端口、至少或约11个端口、至少或约12个端口、至少或约13个端口、至少或约14个端口、至少或约15个端口、至少或约16个端口、至少或约17个端口、至少或约18个端口、至少或约20个端口、至少或约25个端口、至少或约30个端口、至少或约40个端口、至少或约50个端口、或更多端口。端口660和端口660组在实施例中可与通孔620对准以提供流体通道。在实施例中，各组端口660 可与通孔620的中心轴轴向对准。
第二板650也可限定相对于通孔620定位的附加孔670，隐藏示出的侧壁可不通过端口660可见。孔670在实施例中可绕通孔620和端口660限定。孔670可与先前所描述的第二流体通道545类似，所述第二流体通道可提供从内部容积喷淋头600的流体通路。由此，通过在第一板与第二板之间限定的容积流动的前驱物可通过孔670离开喷淋头600，其中前驱物(所述前驱物可能是激发或未激发的前驱物)可随后与已通过端口 660流动的一或更多个前驱物相互作用，所述前驱物可包括在上游产生的等离子体流出物。在实施例中，孔670可以具有相同大小或在与端口660相同的大小范围内，所述端口也可维持跨板650的RF连续性。由此，孔670可以是在板650中限定的第一多个孔，并且端口660可以是在板650中限定的第二多个孔。如图所示，可将孔670限定为跨喷淋头600的组以提供来自在喷淋头600内限定的容积的前驱物的流动均匀性。在实施例中，各组孔670可围绕端口660组形成以提供从孔670和端口660流动的前驱物的更均匀接触。在实施例中，各组可包括在如上文关于端口660论述的组内孔数量的任一个。
喷淋头600可被包括在腔室(诸如腔室500)中，并且可与先前论述的气体分配组件535类似地定位。由此，可定位喷淋头600使得第一板610面向腔室盖、或面向部件，诸如面板523。第二板650可面向处理区域或可邻近处理区域，并且可至少部分限定处理区域内的等离子体处理区域，诸如具有底座或其他部件。由此，第二板650可暴露至等离子体，并且因此第二板650的已暴露表面可在实施例中被涂覆或处理以保护喷淋头 600的第二板不会被等离子体劣化。在其他实施例中，第二板650可能是或包括设计成耐等离子体劣化的材料，并且可能不具有附加的涂层，所述第二板可易于根据使用的材料制造。
图7A示出了根据本技术的实施例的示例性喷淋头600的横截面图。所示出的喷淋头可包括先前所描述的特征或特性的任一个。如图所示，喷淋头600可包括第一板610 和第二板650。第一板610可限定通孔620，所述通孔可与在第二板650中限定的端口 660对准以产生通过喷淋头600的流体通道。端口660可被围绕或具有绕如先前所描述的端口660的孔670。第一板610与第二板650可彼此耦合以限定在第一板610与第二板650之间的容积680。如图所示，容积680可从孔670流体接入。另外，由通孔620 和端口660形成的通道可与在第一板610与第二板650之间限定的容积流体隔离。
喷淋头600可包括由通孔620和端口660形成的通道，所述通道可包括在第一板610中于通孔620处的各个通道的第一末端，和在第二板650中于端口660处的各个通道的第二末端。由此，若喷淋头600可并入在腔室500内，诸如作为气体分配组件如部件535 包括在内，那么形成的通道的第一末端可面向盖502或面板523。另外，形成的各个通道的第二末端可面向底座，并可例如靠近处理区域660。
第二板650可限定通过第二板650的结构的端口660，但端口660的厚度在实施例中可能不等于第二板650的厚度。然而，在其他实施例中，端口660的长度可等于第二板650的厚度。在其中端口660的长度不等于第二板650的厚度的实施例中，可在第二板650中包括一部分形成的通道，并且可某种程度上类似于埋头孔结构，但是可在结构中包括多个端口660。第二板650可由厚度690表征，通过所述厚度限定端口660。此厚度可小于第二板650的厚度以减少对等离子体流出物的影响，所述等离子体流出物可通过形成的通道流动。
例如，若端口通过第二板650的完整厚度形成，所述端口可影响通过形成的通道流动的前驱物或等离子体流出物，此举可增加重组、导致沉积过早发生、或其他后果。由此，在其中限定端口660的区域中第二板650的厚度690在实施例中可能小于或约3mm，并且在实施例中可能小于或约2.5mm、小于或约2mm、小于或约1.8mm、小于或约 1.6mm、小于或约1.5mm、小于或约1.4mm、小于或约1.3mm、小于或约1.2mm、小于或约1.1mm、小于或约1.0mm、小于或约0.9mm、小于或约0.8mm、小于或约0.7mm、小于或约0.6mm、小于或约0.5mm、小于或约0.4mm、小于或约0.3mm、小于或约 0.2mm、或更小。另外，在其中形成端口660的区域中第二板650的厚度在实施例中可能在约0.1mm与约2mm之间、或可能在约0.4mm与约1.6mm之间，连同在任何所论述范围内的更小范围、或由所论述的任何数量形成的一些范围。以此方式，端口可对通过通道流动的前驱物或等离子体流出物具有减少或最小影响，所述通道通过喷淋头 600形成。此举可提供优于包括如先前论述的另一喷淋头的额外优点，因为此喷淋头不能够被加工为此减小的厚度，并且由此与在本公开全文中描述的端口相比可提供更多对前驱物或等离子体流出物的影响。
转到图7B，示出了根据本技术的实施例的示例性喷淋头700的横截面图。喷淋头700可能以某种方式与喷淋头600类似，并且可包括针对彼喷淋头或针对所论述的其他喷淋头或面板的任一个所论述的特征或特性的任一个。喷淋头700不同于喷淋头600之处在于在通过板形成的通道的相对末端上可包括端口760。例如，喷淋头700可包括第一板710和第二板750，当耦合时所述板可限定第一板710与第二板750之间的容积780。第一板710可限定通孔720的一部分并且第二板750可限定通孔720的第二部分。第二板750也可限定孔770。孔770和通孔720可由先前针对各个面板和喷淋头所论述的尺寸或特征的任一个表征。
在一些实施例中，喷淋头700可由第三板755表征，所述第三板可在一表面上与第一板710耦合，所述表面与耦合所述第三板和第二板750的表面相对。在其他实施例中，第三板755可以是第一板710的一部分，所述第一板可包括与先前所描述者类似的埋头孔状结构。第三板755可限定端口760，所述端口可具有先前所描述的端口的特征或特性的任一个。类似地，第三板755的厚度790、或其中可形成端口760的第一板710的区域可与先前所描述的厚度类似以限制与所产生的等离子体流出物或前驱物相互作用，同时提供跨喷淋头700的改良的RF连续性以减少或消除通过喷淋头700的等离子体泄漏。在此示例性喷淋头700中，可在腔室(诸如腔室500)中包括组件，所述腔室与气体分配组件535类似。喷淋头700可定位在腔室内，其中通过所述喷淋头形成的通道的第一末端可面对处理区域560，同时通道的第二末端可面向盖502或面板523。
图8A示出了根据本技术的实施例的示例性喷淋头700的俯视平面图。如图所示，代替包括通孔，可以是第一板710的一部分的第三板755可限定通过所述板的多个孔760，所述孔可以是如先前论述的端口。多个孔760可限定在第一多组孔中，所述第一多组孔可包括第一多个孔的至少两个孔。所述组可包括如先前描述的任何数量孔。
图8B示出了根据本技术的实施例的示例性喷淋头700的仰视平面图。所示出的视图包括第二板750，所述第二板在实施例中可与第一和/或第三板耦合。第二板750可限定多个通孔720，所述通孔可提供至在示出的第三板755中限定的端口760的通路。各个通孔可与来自第一多个孔的至少一组孔对准以产生通道，所述通道可包括先前描述的特性的任一个。第二板750也可限定多个第二孔770，所述第二孔可提供至喷淋头的内部容积的通路。孔可限定或排列在先前论述的图案的任一个中。
上文描述的腔室和等离子体源可用于一或更多种方法中。图9示出了根据本技术的实施例的示例性方法900的操作。方法900可包括于操作905使一或更多种前驱物流动至腔室中。腔室可与先前所描述的腔室的任一个类似，并且可包括喷淋头，诸如所论述的喷淋头的任一个。例如，前驱物可从入口部件或从附加通路(诸如从至在喷淋头的板之间的容积的通路)流动。前驱物可流动至可于操作910形成等离子体的处理区域中。等离子体在实施例中可形成为电容耦合的等离子体，并且电极可包括底座，其上定位基板以及喷淋头，诸如先前所描述。在至少部分由喷淋头限定的处理区域内可含有、实质上含有、或基本上含有所形成的等离子体。例如，喷淋头可具有诸如先前所描述的特征或特性使得于操作915控制或消除通过喷淋头的等离子体泄漏。
腔室和喷淋头也可用于操作中，其中提供前驱物或远程产生的等离子体流出物，诸如在腔室外部，或在腔室的处理区域上游的腔室区域内。例如，等离子体流出物可能在如先前描述的喷淋头与面板之间产生。等离子体流出物可通过喷淋头流动，所述喷淋头包括通过喷淋头限定的通道。通道可由具有第一直径的第一末端和包括数个端口的第二末端表征，其中各个端口可由小于第一直径的直径表征。通道的任一末端可靠近其中定位基板的处理区域。等离子体流出物可通过通道流动，所述通道可对重组具有受限影响，至少部分归因于通道尺寸和端口长度。另外，流出物可在处理区域内进行蚀刻和/或沉积，并且可防止副产物通过通道上游流动至面板。通过在较大通道的末端处包括在限定的材料厚度内的端口，与传统喷淋头相比，本技术的喷淋头可改良这些操作的任一个，此举可提供通过喷淋头的通道的等离子体和副产物泄漏。
在先前描述中，出于解释的目的，已阐述许多细节以提供对本技术的各个实施例的理解。然而，为本领域技术人员显而易见的是，某些实施例可无需一些这些细节实践，或使用附加细节实践。
已公开了数个实施例，本领域技术人员将意识到可使用各种修改、替代构造、和等效物而不脱离所述实施例的精神。另外，未描述数个熟知工艺和元件以避免不必要地混淆本技术。相应地，上文描述不应被视为限制本技术的范围。
当提供数值范围时，应理解，除非本文另外明确指明，还具体地公开了在所述范围的上下限之间的每个中间值，精确到下限单位的最小部分。在所述范围内的任何所述值或未声明的中间值与在彼所述范围中的任何其它所述值或中间值之间的任何更小的范围均涵盖在内。那些较小范围的上限和下限可独立地包括在范围内或排除在范围外，并且任一个限值、没有一个限值或者两个限值包括在更小范围中的每个范围也涵盖在本技术内，但可能会有所述范围中有任何具体排除限制。所述范围包括限制中的一个或两个时，也包括排除那些所包括的限值中的任一个或两个的范围。
在本文和所附权利要求中所使用，除非上下文另外明确指明，单数形式“一(a/an)”和“所述(the)”包括复数引用。因此，例如，对“一孔(an apertures)”的引用包括数个这些孔，并且对“前驱物(the precursor)”的引用包括提及本领域技术人员已知的一或更多种前驱物和其等效物、以及等等。
此外，当用于此说明书和所附权利要求中时，词语“包含(comprise(s))”、“包含(comprising)”、“含有(contain(s))”、“含有(containing)”、“包括(include(s))”、和“包括 (including)”意欲规定存在所述特征、整数、部件、或操作，但是它们不排除存在或添加一或更多个其他特征、整数、部件、操作、功能、或群组。

Claims (17)

1.一种半导体处理腔室，包含：
腔室外壳，至少部分限定所述半导体处理腔室的内部区域，其中所述腔室外壳包含盖；
底座，配置成支撑在所述半导体处理腔室的处理区域内的基板；以及
第一喷淋头，定位在所述半导体处理腔室内，所述第一喷淋头包含耦合在一起的至少两个板以限定在所述至少两个板之间的容积，其中所述至少两个板至少部分限定通过所述第一喷淋头的通道，其中所述至少两个板之间的容积与所述通道流体隔离，其中每个通道由在所述通道的第一末端处的第一直径表征并由在所述通道的第二末端处的多个端口表征，其中所述第一喷淋头限定多个孔，所述多个孔限定从所述至少两个板之间的容积的流体通路，其中每一个通道分别由所述多个孔中的孔的子集围绕，其中围绕一个通道的所述孔的子集中的孔不被包含在围绕任何其他通道的孔的子集中，并且其中孔的每一个子集包括相等数量的孔。
2.如权利要求1所述的半导体处理腔室，其中每个端口由小于所述第一直径的直径表征。
3.如权利要求1所述的半导体处理腔室，进一步包含与电源耦合的第二喷淋头，其中所述第二喷淋头定位在所述盖与所述处理区域之间的所述半导体处理腔室内。
4.如权利要求3所述的半导体处理腔室，进一步包含与电气接地耦合的面板，其中所述面板定位在所述第二喷淋头与所述处理区域之间的所述半导体处理腔室内。
5.如权利要求4所述的半导体处理腔室，其中所述面板与所述第一喷淋头直接接触，并且其中所述面板和所述第一喷淋头与电气接地耦合。
6.如权利要求4所述的半导体处理腔室，其中所述半导体处理腔室进一步包含在所述第二喷淋头与所述面板之间的间隔件，并且其中所述第二喷淋头、所述面板、和所述间隔件被配置成至少部分限定在所述半导体处理腔室内的等离子体处理区域。
7.如权利要求3所述的半导体处理腔室，其中所述底座与电源耦合，并且其中所述第一喷淋头与电气接地耦合。
8.如权利要求7所述的半导体处理腔室，其中所述底座和所述第一喷淋头被配置成至少部分限定在所述半导体处理腔室的所述处理区域内的等离子体处理区域。
9.如权利要求1所述的半导体处理腔室，其中所述第一喷淋头定位在所述半导体处理腔室内，所述第一喷淋头具有面对面板的每个通道的所述第一末端，并具有靠近所述半导体处理腔室的处理区域的每个通道的所述第二末端。
10.如权利要求1所述的半导体处理腔室，其中所述第一喷淋头定位在所述半导体处理腔室内，所述第一喷淋头具有靠近所述半导体处理腔室的处理区域的每个通道的所述第一末端，并具有面对面板的每个通道的所述第二末端。
11.如权利要求1所述的半导体处理腔室，其中所述第一喷淋头的表面邻近所述半导体处理腔室的所述处理区域，并且其中所述表面经涂覆。
12.如权利要求1所述的半导体处理腔室，其中所述第一直径是至少2.5mm，并且其中每个端口的直径小于或等于1.2mm。
13.一种等离子体处理腔室，包含：
喷淋头，包含：
第一板，限定多个通孔；以及
第二板，与所述第一板耦合，其中所述第二板限定第一多个孔和第二多个孔，其中所述第二多个孔被限定在多组孔中的所述第二板中，所述多组孔包括所述第二多个孔中的至少两个孔，其中所述第一板的每个通孔与所述多组孔中的至少一组孔对准以产生通道，其中所述第一板与所述第二板彼此耦合以限定在所述第一板与所述第二板之间的容积，其中所述容积从所述第二板的所述第一多个孔流体接入，其中所述通道与在所述第一板与所述第二板之间限定的所述容积流体隔离，其中所述第一多个孔被限定在多个第一组孔中的所述第二板中，其中每个第一组孔包含所述第一多个孔中的至少四个孔，并且其中每个第一组孔围绕分离的一个通道，围绕一个通道的第一组孔中的每一个孔不被包含在围绕任何其他通道的另一个第一组孔中。
14.如权利要求13所述的等离子体处理腔室，其中每个通孔由至少5mm的直径表征。
15.如权利要求13所述的等离子体处理腔室，其中所述第二多个孔的每个孔由小于或等于1mm的直径表征。
16.如权利要求13所述的等离子体处理腔室，其中所述第二多个孔的每组孔包括至少6个孔。
17.如权利要求13所述的等离子体处理腔室，其中所述第二板包含耐等离子体劣化的材料。
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TWI787198B (zh) 2022-12-21
US11049698B2 (en) 2021-06-29
JP7355872B2 (ja) 2023-10-03
KR102589536B1 (ko) 2023-10-16
US20180096819A1 (en) 2018-04-05
JP7044501B2 (ja) 2022-03-30
CN207637743U (zh) 2018-07-20
US10546729B2 (en) 2020-01-28
TWM561905U (zh) 2018-06-11
KR20220116135A (ko) 2022-08-22
CN107895683A (zh) 2018-04-10
KR20180037572A (ko) 2018-04-12
US20180096821A1 (en) 2018-04-05
JP2022095672A (ja) 2022-06-28
TW201814787A (zh) 2018-04-16
KR102433298B1 (ko) 2022-08-18

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