TWI787198B - 具有改良輪廓的雙通道噴淋頭 - Google Patents
具有改良輪廓的雙通道噴淋頭 Download PDFInfo
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- TWI787198B TWI787198B TW106129126A TW106129126A TWI787198B TW I787198 B TWI787198 B TW I787198B TW 106129126 A TW106129126 A TW 106129126A TW 106129126 A TW106129126 A TW 106129126A TW I787198 B TWI787198 B TW I787198B
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- showerhead
- processing chamber
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Abstract
本案公開了一種具有改良輪廓的雙通道噴淋頭。所描述的處理腔室可包括腔室外殼,所述腔室外殼至少部分界定半導體處理腔室的內部區域。腔室可包括底座。腔室可包括定位在蓋與處理區域之間的第一噴淋頭,並且可包括定位在第一噴淋頭與處理區域之間的面板材。腔室亦可包括定位在半導體處理腔室的面板材與處理區域之間的所述腔室內的第二噴淋頭。第二噴淋頭可包括耦合在一起的至少兩個板材以界定在所述至少兩個板材之間的容積。所述至少兩個板材可至少部分界定透過第二噴淋頭的通道,並且每個通道可由在所述通道的第一末端處的第一直徑表徵並可由在所述通道的第二末端處的多個埠表徵。
Description
本申請主張於2016年10月4日申請並且標題為「DUAL-CHANNEL SHOWERHEAD WITH IMPROVED PROFILE」的美國專利申請第15/285,331號的優先權,所述美國專利申請全文出於全部目的以引用方式併入本文中。
本技術係關於半導體系統、製程和設備。更具體而言,本技術係關於可包括噴淋頭的處理腔室,所述噴淋頭可用作電漿電極。
積體電路可能藉由在基板表面上產生複雜圖案化的材料層的製程製成。在基板上產生圖案化材料需要用於移除已暴露材料的受控方法。化學蝕刻用於各種目的,所述目的包括將光刻膠中的圖案轉移至下層、減薄層、或減薄已經存在於表面上的特徵的橫向尺寸。通常期望具有與另一種材料相比更快地蝕刻一種材料的蝕刻製程,進而促進例如圖案轉移製程。認為此蝕刻製程對第一種材料具有選擇性。由於材料、電路、和製程的多樣性,已經開發了對各種材料具有選擇性的蝕刻製程。
蝕刻製程、沉積製程和清潔製程可在各種腔室中進行。該等腔室可包括元件,所述元件可用以形成電容耦合的電漿,或可能靠近產生其他形式的電漿的內部腔室區域,如電感耦合的電漿。腔室元件可能以某些方式配置以減少電漿產生或藉由腔室的前驅物分配的影響,但此可能以額外功能為代價。
因此,需要可用以產生高品質裝置和結構的改良的系統和方法。該等和其他需求藉由本技術解決。
本技術的半導體處理系統和方法可包括半導體處理腔室,所述腔室包括至少部分限定半導體處理腔室的內部區域的腔室外殼,並且所述腔室外殼可包括蓋。腔室可包括被配置以在半導體處理腔室的處理區域內支撐基板的底座。腔室可包括定位在蓋與處理區域之間的第一噴淋頭,並且可包括定位在半導體處理腔室的第一噴淋頭與處理區域之間的面板材。腔室亦可包括定位在半導體處理腔室的面板材與處理區域之間的腔室內的第二噴淋頭。第二噴淋頭可包括耦合在一起的至少兩個板材以界定在所述至少兩個板材之間的容積。至少兩個板材可至少部分界定通過第二噴淋頭的通道,並且每個通道可由在通道的第一末端處的第一直徑表徵,並可由在通道的第二末端處的多個埠表徵。
在實施例中,每個埠可由小於第一直徑的直徑表徵。另外,第一噴淋頭可與電源耦合,並且面板材可與
電氣接地耦合。示例性半導體處理腔室亦可包括在第一噴淋頭與面板材之間的間隔件。第一噴淋頭、面板材和間隔件可被配置以至少部分界定在半導體處理腔室內的電漿處理區域。在一些實施例中,底座可與電源耦合,並且第二噴淋頭可與電氣接地耦合。底座和第二噴淋頭可被配置以至少部分限定在半導體處理腔室的處理區域內的電漿處理區域。在實施例中,面板材與第二噴淋頭可直接接觸,並且面板材和第二噴淋頭都可與電氣接地耦合。
第二噴淋頭可定位在腔室內,使得每個通道的第一末端面對面板材,並具使得每個通道的第二末端靠近半導體處理腔室的處理區域。另外,第二噴淋頭可定位在腔室內,使得每個通道的第一末端靠近半導體處理腔室的處理區域,並使得每個通道的第二末端面對面板材。第二噴淋頭的表面可鄰近半導體處理腔室的處理區域,並且可塗覆或處理所述表面。在一些實施例中,第一直徑可以是至少約2.5mm,並且每個埠的直徑可以小於或約1.2mm。
本技術亦涵蓋噴淋頭。噴淋頭可包括界定多個通孔的第一板材。噴淋頭亦可包括與第一板材耦合的第二板材。第二板材可界定第一複數個孔和第二複數個孔,並且第二複數個孔可被界定在第二板材中的多組孔中,所述多組孔包括第二複數個孔中的至少兩個孔。在一些實施例中,第一板材的每個通孔可與至少一組孔對準以產生通道。
在實施例中,第一板材與第二板材可彼此耦合以界定在所述第一板材與所述第二板材之間的容積。容積可從第二板材的第一複數個孔流體接入,並且通道可與在第一板材與第二板材之間界定的容積流體隔離。第一複數個孔可被界定在第二板材中的複數個第一組孔中,所述複數個第一組孔包括第一複數個孔中的至少兩個孔,並且每個第一組孔可圍繞第二複數個孔中的一組孔。在一些實施例中,每個第一組孔可包括至少4個孔。在一些實施例中,每個通孔可由至少約5mm的直徑表徵。第二複數個孔的每個孔可由小於或約1mm的直徑表徵。第二複數個孔的每組孔可包括至少約6個孔。在一些實施例中,第二板材可包括耐電漿劣化的材料。
本技術亦可涵蓋噴淋頭,所述噴淋頭可包括界定第一複數個孔的第一板材。第一複數個孔可被界定在第一板材中的多組孔中,所述多組孔包括第一複數個孔的至少兩個孔。噴淋頭亦可包括與第一板材耦合的第二板材。第二板材可界定第二複數個孔和多個通孔,並且第二板材的每個通孔可與第一複數個孔的至少一組孔對準以產生通道。
本技術可提供優於習用系統和技術的數個優點。例如,本技術的噴淋頭可提供改良的接地路徑,從而可限制電漿洩漏。另外,噴淋頭可限制反應副產物回流並接觸其他腔室元件。結合以下描述和附圖更詳細地描述該等和其他實施例,連同眾多其優點和特徵。
100:處理系統
104:工廠介面
105A:箱裝載器
105B:箱裝載器
105C:箱裝載器
105D:箱裝載器
114A:處理腔室
114B:處理腔室
114C:處理腔室
114D:處理腔室
110:移送腔室
116:檢修腔室
117:整合度量腔室
106A:裝載閘腔室
106B:裝載閘腔室
108A:機器人
108B:機器人
113:輸送機構
113A:基板輸送葉片
113B:可延伸臂
200:處理腔室系統
202:基板
205:二級電極
207:繼電器
208:RF電源
210:噴淋頭
215:擋板材
216:第一饋送氣體流
217:熱交換器線圈
218:分配區域
220:介電環
223:虛線
224:虛線
225:第一噴淋頭
227:繼電器
228:RF源
230:介電間隔件
240:接地腔室壁
248:高壓DC電源
249:網孔
250:夾盤
251:升降器
252:RF發生器
253:RF發生器
255:風箱
260:閘閥
265:幫浦
266:幫浦
270:第一電漿
276:氣體入口
278:孔
280:孔
281:第二腔室區域
282:孔
283:孔
284:第一腔室區域
290:氣體分配系統
292:第二電漿
325:噴淋頭
365:通孔
375:小孔
400:面板材
410:框
420:板材
465:孔
500:處理系統
501:入口
502:腔室蓋
503:腔室外殼
507:孔
509:面板材
510:間隔件
511:混合區域
515:第一噴淋頭
517:孔
519:RF源
523:板材
524:孔
533:電漿處理區域
534:電氣接地
535:氣體分配組合件
537:容積
539:嵌入式加熱器
540:第一流體通道
544:電氣接地
545:第二流體通道
554:電源
555:基板\晶圓
560:處理區域
565:底座
600:噴淋頭
610:第一板材
620:通孔
650:第二板材
660:埠
670:孔
680:容積
690:厚度
700:噴淋頭
710:第一板材
720:通孔
750:第二板材
755:第三板材
760:埠
770:孔
780:容積
790:厚度
900:方法
905:操作
910:操作
915:操作
W:基板
可藉由參考說明書的剩餘部分和附圖實現對所公開的技術的性質和優點的進一步理解。
圖1示出了根據本技術的實施例的示例性處理系統的俯視平面圖。
圖2示出了根據本技術的實施例的示例性處理腔室的示意性橫截面圖。
圖3示出了根據所公開技術的實施例的示例性噴淋頭的仰視平面圖。
圖4示出了根據所公開技術的實施例的示例性面板材的平面圖。
圖5示出了根據本技術的實施例的處理腔室的橫截面圖。
圖6A示出了根據本技術的實施例的示例性噴淋頭的俯視平面圖。
圖6B示出了根據本技術的實施例的示例性噴淋頭的仰視平面圖。
圖7A示出了根據本技術的實施例的示例性噴淋頭的橫截面圖。
圖7B示出了根據本技術的實施例的示例性噴淋頭的橫截面圖。
圖8A示出了根據本技術的實施例的示例性噴淋頭的俯視平面圖。
圖8B示出了根據本技術的實施例的示例性噴淋頭的仰視平面圖。
圖9示出了根據本技術的實施例的示例性方法的操作步驟。
本案包括作為示意圖的數個圖式。應理解,附圖是出於說明性目的,並且不應視為按比例,除非具體聲明為按比例。另外,作為示意圖,本案提供圖式以協助理解並且與實際表示相比所述附圖可能不包括全部方面或資訊,並且出於說明性目的所述附圖可能包括額外或誇大的材料。
在附圖中,相似元件和/或特徵可能具有相同元件符號。進一步地,相同類型的各個元件可用元件符號後加上區別相似元件的字母來區別。若在說明書中僅使用第一元件符號,則無論字母如何,描述可適用具有相同第一元件符號的相似元件的任何一個。
本技術包括用於半導體處理的系統和元件,所述半導體處理包括調整的蝕刻製程。某些可用的處理腔室可包括多個電漿機構,如於晶圓水準的電漿機構以及遠端電漿源。晶圓水準的電漿可通常經由在兩個電極之間形成的電容耦合電漿形成。該等電極的一個或兩個可能是或包括額外腔室元件,如噴淋頭、底座或腔室壁。噴淋頭可以任何數量的方式配置以影響前驅物分配,並且亦可在電漿
產生中用作電極。然而,用以改良在處理腔室中的流動輪廓的噴淋頭配置可影響作為電極的噴淋頭效能。
例如,經由噴淋頭增加的孔直徑可允許改良自由基重組以及經由噴淋頭的流動均勻性。另一方面,若噴淋頭亦作為電極操作,則增加的孔直徑可允許經由噴淋頭的電漿洩漏,電漿可隨後與其他元件相互作用。對於晶圓水準電漿,較大孔直徑亦可允許來自蝕刻或沉積反應的反應副產物經由孔回流並與其他腔室元件接觸、沉積或反應。
習用技術可能以數種方式處理該等現象。在一個實例中,額外板材或噴淋頭包括在處理區域中以防止或減少經由所述噴淋頭的任何材料回流。然而,此種元件可增加用於前驅物的腔室流動路徑。對於藉由腔室行進的自由基前驅物,此可能允許發生重組或能量損失,此舉可降低前驅物或電漿流出物的有效性。本技術可藉由提供可用於半導體處理腔室中的改良噴淋頭來克服該等缺陷,包括用於晶圓水準的電漿產生。噴淋頭可包括具有在一個末端增大直徑的通道以允許足夠的前驅物流動,並且可於相對末端包括埠以防止電漿和反應副產物經由噴淋頭流回。該等設計可保護其他腔室元件,同時亦限制對自由基重組速率的影響。
儘管剩餘公開內容將例行標識採用所公開技術的具體蝕刻製程,但將容易理解的是,系統和方法可等
效地應用至可在所描述腔室中發生的沉積和清潔製程。由此,本技術不應被視為限制為單獨用於蝕刻製程。
圖1示出了根據實施例的沉積、蝕刻、烘烤和固化腔室的處理系統100的一個實施例的俯視平面圖。圖1所描繪的處理工具100可含有複數個處理腔室114A-D、移送腔室110、檢修腔室116、整合度量腔室117和一對裝載閘腔室106A-B。處理腔室可包括與關於圖2所描述的彼等類似的結構或元件,以及額外的處理腔室。
為了在腔室間輸送基板,移送腔室110可含有機器人輸送機構113。輸送機構113可具有分別附接至可延伸臂113B的遠端的一對基板輸送葉片113A。葉片113A可用於將各個基板運載至處理腔室並且自所述處理腔室運載各個基板。在操作中,基板輸送葉片中的一個(如輸送機構113的葉片113A)可從裝載閘腔室(如腔室106A-B)中的一個取回基板W並且將基板W運載至第一處理階段,例如,在腔室114A-D中如下文所描述的蝕刻製程。若所述腔室已被佔用,則機器人可等到處理完成並且隨後使用一個葉片113A從所述腔室移除已處理的基板並且可使用第二葉片(未圖示)插入新的基板。一旦已處理了基板,所述基板可隨後被移至第二處理階段。對於各次移動,輸送機構113一般可利用一個葉片運載基板,以及利用一個空葉片執行基板交換。輸送機構113可於每個腔室處等待直到可實現交換。
一旦在處理腔室內完成處理,輸送機構113可從上一處理腔室移動基板W,並將基板W輸送至裝載閘腔室106A-B內的盒。基板可從裝載閘腔室106A-B移動至工廠介面104中。工廠介面104一般可操作以在大氣壓清潔環境中的箱裝載器105A-D與裝載閘腔室106A-B之間轉移基板。工廠介面104中的清潔環境可一般藉由空氣過濾製程(例如HEPA過濾)提供。工廠介面104亦可包括在處理之前可用以妥當地對準基板的基板定向器/對準器(未圖示)。至少一個基板機器人,如機器人108A-B,可定位在工廠介面104中以在工廠介面104內的各個定位/位置之間輸送基板並且輸送至與其連通的其他位置。機器人108A-B可被配置以沿著從工廠介面104的第一末端至第二末端的殼體104內的軌道系統運動。
處理系統100可進一步包括整合度量腔室117以提供控制信號,所述控制信號可提供對在處理腔室中進行的製程中的任一個的自我調整控制。整合度量腔室117可包括各種度量裝置中的任一個以量測各種膜性質,如厚度、粗糙度、組成,並且度量裝置可進一步能夠以自動化方式表徵光柵參數,如在真空下的臨界尺寸、側壁角度和特徵高度。
現轉到圖2,該圖示出了根據本技術的示例性處理腔室系統200的橫截面圖。腔室200可例如用於先前所論述的系統100的處理腔室部分114的一或更多者中。一般而言,蝕刻腔室200可包括用以實施離子研磨操
作的第一電容耦合的電漿源和用以實施蝕刻操作並實施可選沉積操作的第二電容耦合的電漿源。腔室200可包括圍繞夾盤250的接地腔室壁240。在實施例中,夾盤250可能是靜電夾盤,所述靜電夾盤在處理期間將基板202夾持至夾盤250的頂表面,但是亦可採用已知的其他夾持機構。夾盤250可包括嵌入式熱交換器線圈217。在示例性實施例中,熱交換器線圈217包括一或更多個傳熱流體通道,傳熱流體(如乙二醇/水混合物)可藉由所述傳熱流體通道傳遞以控制夾盤250的溫度及最終控制基板202的溫度。
夾盤250可包括耦合至高壓DC電源248的網孔249使得網孔249可攜帶DC偏壓電位以實施基板202的靜電夾持。夾盤250可與第一RF電源耦合,並且在一個此實施例中,網孔249可與第一RF電源耦合使得DC電壓偏移和RF電壓電位均跨過夾盤250的頂表面上的薄介電層耦合。在說明性實施例中,第一RF電源可包括第一和第二RF發生器252、253。RF發生器252、253可於任何工業上採用的頻率操作,然而在示例性實施例中,RF發生器252可於60MHz操作以提供有利方向性。如若亦提供第二RF發生器253,示例性頻率可能是2MHz。
在夾盤250由RF供電的情況下,RF返回路徑可由第一噴淋頭225提供,所述第一噴淋頭可包括雙通道噴淋頭。第一噴淋頭225可設置在夾盤上方以將第一饋送氣體分配至由第一噴淋頭225和腔室壁240界定的第一
腔室區域284中。因此,夾盤250和第一噴淋頭225形成第一RF耦合電極對以在第一腔室區域284內電容激勵第一饋送氣體的第一電漿270。由RF供電的夾盤的電容耦合而產生的DC電漿偏壓或RF偏壓可產生從第一電漿270至基板202的離子通量(例如,Ar離子,其中第一饋送氣體是Ar),以提供離子研磨電漿。第一噴淋頭225可接地或替代地與RF源228耦合,所述RF源具有可於與夾盤250的頻率不同的頻率(例如,13.56MHz或60MHz)操作的一或更多個發生器。在所示出的實施例中,第一噴淋頭225可選擇地透過繼電器227耦合至地面或RF源228,所述繼電器可在蝕刻製程期間自動地受控,例如由控制器(未圖示)來控制。在所公開的實施例中,腔室200可以不包括噴淋頭225或介電間隔件220,並且可替代地僅包括下文進一步描述的擋板材215和噴淋頭210。
如在圖式中進一步示出,蝕刻腔室200可包括於低製程壓力下能夠具有高通量的幫浦堆疊。在實施例中,至少一個渦輪分子幫浦265、266可藉由一或更多個閘閥260與第一腔室區域284耦合並且設置在夾盤250下方,與第一噴淋頭225相對。渦輪分子幫浦265、266可能是任何市售幫浦,所述市售幫浦具有適宜通量並且更具體而言可適當地調整大小以於第一饋送氣體的期望流速(例如,氬氣是第一饋送氣體的情況下為50至500sccm Ar)維持製程壓力低於或約10mTorr或者低於
或約5mTorr。在所示出的實施例中,夾盤250可形成位於兩個渦輪幫浦265與266之間的中心處的底座的部分,然而,在替代配置中,夾盤250可能在從腔室壁240懸掛出的底座上,所述腔室壁具有單個渦輪分子幫浦,所述渦輪分子幫浦具有與夾盤250的中心對準的中心。
設置在第一噴淋頭225上方的可以是第二噴淋頭210。在一個實施例中,在處理期間,第一饋送氣體源(例如,從氣體分配系統290遞送的氬氣)可與氣體入口276耦合,並且透過複數個孔280流動的第一饋送氣體透過第二噴淋頭210延伸至第二腔室區域281中,並且透過複數個孔282流動的第一饋送氣體透過第一噴淋頭225延伸至第一腔室區域284中。額外流動分配器或具有孔278的擋板材215可透過分配區域218來進一步跨蝕刻腔室200的直徑分配第一饋送氣體流216。在替代實施例中,第一饋送氣體可經由孔283直接流至第一腔室區域284中,所述孔如由虛線223指示與第二腔室區域281隔離。
腔室200可額外從所示出的狀態重新配置以進行蝕刻操作。二級電極205可設置在第一噴淋頭225上方,其間具有第二腔室區域281。二級電極205可進一步形成蝕刻腔室200的蓋或頂板材。二級電極205與第一噴淋頭225可透過介電環220電氣隔離並且形成第二RF耦合電極對以在第二腔室區域281內電容放電第二饋送氣體的第二電漿292。有利地,第二電漿292可能不在夾盤
250上提供顯著RF偏壓電位。第二RF耦合電極對的至少一個電極可與RF源耦合以用於激勵蝕刻電漿。二級電極205可與第二噴淋頭210電氣耦合。在示例性實施例中,第一噴淋頭225可與接地面耦合或浮置,並且可透過繼電器227耦合至接地,進而在操作的離子研磨模式期間允許第一噴淋頭225亦由RF電源228供電。在第一噴淋頭225接地的情況下,具有於13.56MHz或60MHz操作的一或更多個RF發生器的RF電源208,例如可透過繼電器207與二級電極205耦合,此可在其他可操作模式期間(如在離子研磨操作期間)允許二級電極205亦接地,但是若對第一噴淋頭225供電,則二級電極205亦可保持浮置。
第二饋送氣體源(如三氟化氮)和氫源(如氨)可從氣體分配系統290遞送,並且與氣體入口276耦合,如經由虛線224。在此模式中,第二饋送氣體可透過第二噴淋頭210流動並且可在第二腔室區域281中被激勵。反應性物種可隨後被傳遞至第一腔室區域284中以與基板202反應。如進一步示出,針對其中第一噴淋頭225是多通道噴淋頭的實施例,可提供一或更多個饋送氣體以與由第二電漿292產生的反應性物種反應。在一個此實施例中,水源可與複數個孔283耦合。額外配置亦可基於提供的一般說明,但各種元件經重新配置。例如,流動分配器或擋板材215可以是與第二噴淋頭210類似的板材,並且可定位在二級電極205與第二噴淋頭210之間。
由於該等板材的任一個在各種配置中可作為電極操作以用於產生電漿,一或更多個環形或其他形狀間隔件可定位在一或更多個與介電環220類似的該等元件之間。第二噴淋頭210在實施例中亦可作為離子抑制板材操作,並且可被配置以減少、限制、或抑制離子物種透過第二噴淋頭210的流動,同時仍允許中性和自由基物種流動。一或更多個額外噴淋頭或分配器可被包括在第一噴淋頭225與夾盤250之間的腔室中。此噴淋頭可採取先前所描述的分配板材或結構的任一個的形狀或結構。此外,在實施例中,遠端電漿單元(未圖示)可與氣體入口耦合以將電漿流出物提供至用於各種製程的腔室。
在實施例中,夾盤250可在垂直於第一噴淋頭225的方向中沿著距離H2移動。夾盤250可以在由風箱255或類似者圍繞的致動機構上,以允許夾盤250移動至更靠近第一噴淋頭225或離所述第一噴淋頭更遠,以此作為在夾盤250與第一噴淋頭225之間控制傳熱的手段,可處於80℃-150℃的高溫,或更高。因此,蝕刻製程可藉由相對於第一噴淋頭225在第一與第二預定位置之間移動夾盤250來實施。或者,夾盤250可包括升降器251以將基板202抬離夾盤250的頂表面達距離H1,進而在蝕刻製程期間控制第一噴淋頭225的加熱。在其他實施例中,例如在蝕刻製程於固定溫度(如約90-110℃)進行的情況下,可避免夾盤移位機構。系統控制器(未圖示)
可在蝕刻製程期間藉由自動地交替對第一和第二RF耦合電極對供電來交替地激勵第一和第二電漿270和292。
腔室200亦可被重新配置以進行沉積操作。電漿292可在第二腔室區域281中藉由RF放電產生,所述RF放電可以針對第二電漿292所描述的任何方式來實施。如若對第一噴淋頭225供電以在沉積期間產生電漿292,則第一噴淋頭225可藉由介電間隔件230與接地腔室壁240隔離,以便相對於腔室壁電氣浮置。在示例性實施例中,氧化劑饋送氣體源(如分子氧)可從氣體分配系統290遞送,並且與氣體入口276耦合。在其中第一噴淋頭225是多通道噴淋頭的實施例中,任何含矽前驅物(如OMCTS)例如可從氣體分配系統290遞送,並且被引導至第一腔室區域284中以與透過第一噴淋頭225從電漿292傳遞的反應性物種反應。或者含矽前驅物連同氧化劑亦可透過氣體入口276流動。包括作為一般腔室配置的腔室200,所述腔室配置可用在參考本技術論述的各種操作中。
圖3是根據實施例與處理腔室一起使用的噴淋頭325的仰視圖。噴淋頭325可與圖2所示的噴淋頭225對應。可以是第一流體通道或孔282的視圖的通孔365可具有複數個形狀和配置以控制並影響前驅物透過噴淋頭225的流動。可以是第二流體通道或孔283的視圖的小孔375可實質上均勻地分佈在噴淋頭的表面上方(甚
至在通孔365中),並且在所述前驅物離開噴淋頭時可提供比其他配置更均勻的對前驅物的混合。
圖4示出了根據實施例用於面板材的排列。如圖所示,面板材400可包括多孔板材或歧管。面板材的組合件可與圖3所示的噴淋頭類似,或者可包括被特定配置以用於前驅物氣體的分配圖案的設計。面板材400可包括環形框410,所述框以各種排列定位在示例性處理腔室(如圖2所示的腔室)內。可在框上或在框內耦合板材420,所述板材可在實施例中與如下描述的離子抑制器板材523類似。在實施例中,面板材400可以是單片設計,其中框410和板材420是單片材料。
板材可具有圓盤形狀並且被安置在框410上或在所述框內。板材可以是導電材料(如包括鋁的金屬),以及允許板材充當電極的其他導電材料,所述電極用於先前所描述的電漿排列中。板材可具有各種厚度,並且可包括在所述板材內界定的複數個孔465。如圖4所示的示例性排列可包括如先前參考圖3的排列所描述的圖案,並且可包括具有幾何圖案(如所示的六邊形)的一系列孔環。應理解,所示出的圖案是示例性的並且應理解各種圖案、孔排列、和孔間隔均涵蓋在設計中。
孔465可調整大小或被另外配置以在操作期間允許流體流經所述孔。孔可在各個實施例中調整大小為小於約2英吋,並且可小於或約1.5英吋、約1英吋、約0.9英吋、約0.8英吋、約0.75英吋、約0.7英吋、約0.65
英吋、約0.6英吋、約0.55英吋、約0.5英吋、約0.45英吋、約0.4英吋、約0.35英吋、約0.3英吋、約0.25英吋、約0.2英吋、約0.15英吋、約0.1英吋、約0.05英吋、約0.04英吋、約0.035英吋、約0.03英吋、約0.025英吋、約0.02英吋、約0.015英吋、約0.01英吋等等,或更小。
在一些實施例中,面板材400可作為離子抑制器操作,所述離子抑制器界定被配置以抑制帶離子電荷的物種遷移出腔室電漿區域同時允許不帶電的中性或自由基物種透過離子抑制器傳遞至離子抑制器下游的活化氣體遞送區域中的整個結構中的多個孔。在實施例中,離子抑制器可以是具有多個孔配置的多孔板材。該等不帶電的物種可包括使用較低反應性載劑氣體透過孔輸送的強反應性物種。如上文提及,可減少並且在一些實例中完全抑制離子物種透過孔的遷移。例如,可控制孔的深寬比、或孔直徑與長度比、和/或孔的幾何形狀,以減少在活化氣體中帶離子電荷的物種穿過離子抑制器的流動。
轉到圖5,該圖示出了根據本技術的處理系統500的簡化示意圖。系統500的腔室可包括先前關於圖2至圖4所論述的元件的任一個,並且可被配置以在腔室的處理區域560中容納半導體基板555。腔室外殼503可至少部分界定腔室的內部區域。例如,腔室外殼503可包括蓋502,並且可至少部分包括在圖式中示出的其他板材或元件中的任一個。例如,腔室元件可作為一系列堆疊元件
包括在內,其中每個元件至少部分界定腔室外殼503的一部分。基板555可位於如圖所示的底座565上。處理腔室500可包括與入口501耦合的遠端電漿單元(未圖示)。在其他實施例中,系統可不包括遠端電漿單元。
在具有或不具有遠端電漿單元的情況下,系統可被配置以透過入口501接收前驅物或其他流體,所述入口可提供進出處理腔室的混合區域511的通路。混合區域511可與腔室的處理器區域560分離並且可與所述處理區域流體耦合。混合區域511可由系統500的腔室的頂部(如腔室蓋502或蓋組合件)至少部分界定,所述頂部可包括用於一或更多個前驅物的入口組合件和分配裝置,如下文的面板材509。面板材509可在所公開的實施例中與圖3至圖4中示出的噴淋頭或面板材類似。面板材509可包括複數個通道或孔507,所述通道或孔可在藉由腔室之前定位和/或改變形狀以影響前驅物在混合區域511中的分配和/或滯留時間。
例如,重組可藉由調節整個面板材509的孔數量、孔大小、或孔配置影響或控制。如圖所示,面板材509可定位在腔室的混合區域511與處理區域560之間,並且面板材509可被配置以透過腔室500分配一或更多個前驅物。腔室500可包括一系列元件的一或更多個,所述元件可選地被包括在所公開的實施例中。例如,儘管描述了面板材509,在一些實施例中,腔室可不包括此面板材。在所公開的實施例中,在混合區域511中至少部分
混合的前驅物可經由系統的操作壓力、腔室元件的排列、或前驅物的流動輪廓的一或更多者引導經由腔室。
腔室500可另外包括第一噴淋頭515。噴淋頭515可具有關於圖3至圖4所論述的板材的特徵或特性的任一個。噴淋頭515可定位在如圖所示的半導體處理腔室內,並且可被包括或定位在蓋502與處理區域560之間。在實施例中,噴淋頭515可能是或包括金屬或導電元件,所述元件可能是被塗覆、調節(season)、或以其他方式處理的材料。示例性材料可包括金屬(包括鋁),以及金屬氧化物(包括氧化鋁)。根據所採用的前驅物、或在腔室內進行的製程,噴淋頭可以是任何其他金屬或材料,所述金屬或材料可提供可採用的結構穩定性以及導電性。
噴淋頭515可界定一或更多個孔517以促進前驅物藉由噴淋頭均勻分配。孔517可被包括在各種配置或圖案中,並且可由任何數量的幾何形狀表徵,所述幾何形狀可提供所期望的前驅物分配。噴淋頭515在實施例中可與電源電氣耦合。例如,噴淋頭515可與如圖所示的RF源519耦合。當操作時,RF源519可向噴淋頭515提供電流以允許電容耦合的電漿(「CCP」)形成在噴淋頭515與另一元件之間。
額外的面板材或裝置523可設置在噴淋頭515下方。面板材523可包括與面板材509類似的設計,並且可具有例如與圖3或圖4所示出者類似的排列。在實施例中,面板材523可定位在噴淋頭515與處理區域560
之間的半導體處理腔室內。間隔件510可定位在噴淋頭515與板材523之間,並且可包括介電材料。孔524可被限定在板材523中,並且可被分配並配置以影響離子物種透過板材523的流動。例如,孔524可被配置以至少部分抑制朝向處理區域560引導的離子物種的流動,並且可允許板材523作為如先前所描述的離子抑制器操作。孔524可具有包括如先前所論述的通道的各種形狀,並且可包括在所公開的實施例中遠離處理區域560向磊晶伸的錐形部分。
面板材523可與電氣接地534耦合,此舉可允許在實施例中產生電漿。例如,噴淋頭515、面板材523和間隔件510可至少部分在半導體處理腔室內界定電漿處理區域533。前驅物可藉由入口501提供並且藉由面板材509和噴淋頭515分配至電漿處理區域533。噴淋頭515可相對於面板材523處的接地帶電,並且前驅物可被激勵以在電漿處理區域533內產生電漿。電漿流出物可隨後經由面板材523朝向處理區域560流動以與基板或晶圓555或基板上的材料相互作用。
腔室500可在腔室內進一步包括氣體分配組合件535,所述氣體分配組合件亦可以是第二噴淋頭。例如,氣體分配組合件535可至少部分界定處理區域560,並且可將前驅物分配至所述區域。為了在基板555上提供均勻處理,氣體分配組合件535可被配置以使前驅物更均勻地流至處理區域560中。可在各個態樣與如先前所描述
的雙通道噴淋頭類似的氣體分配組合件535可位於在處理區域560上方的腔室內,如在處理區域560與蓋502之間,並且可定位在處理區域560與面板材523之間。氣體分配組合件535可被配置以將第一和第二前驅物均遞送至腔室的處理區域560中。在實施例中,氣體分配組合件535可將腔室的內部區域至少部分分為遠端區域和其中定位基板555的處理區域。
儘管圖5的示例性系統包括雙通道噴淋頭,應理解可採用替代分配組合件,所述替代分配組合件維持與經由入口501引入的物種流體隔離的前驅物。例如,可採用多孔板材和在所述板材下面的管,但是其他配置可以降低的效率操作或者可不作為如所描述的雙通道噴淋頭的均勻處理提供。藉由採用所公開的設計之一,可將前驅物引入處理區域560中,所述前驅物在進入處理區域560之前未由電漿先前激發,或者可引入所述前驅物以避免接觸所述前驅物可與之反應的額外前驅物。儘管未圖示,但額外的間隔件(如環形間隔件)可定位在面板材523與噴淋頭535之間以使所述板材彼此隔離。在其中不可包括額外前驅物的實施例中,氣體分配組合件535可具有與先前所描述的元件的任一個類似的設計,並且可包括與圖4所示出的面板材類似的特性。
在實施例中,氣體分配組合件535可包括嵌入式加熱器539,所述加熱器例如可包括電阻式加熱器或溫度可控流體的通道。在實施例中,氣體分配組合件535可
包括上部板材和下部板材,並且可包括彼此耦合的複數個板材,根據在氣體分配組合件535內的配置或間隔,所述板材可包括大於或約2個板材、大於或約3個板材、大於或約4個板材、大於或約5個板材、或更多。板材可彼此耦合以在所述板材之間界定容積537。板材的耦合可使得如用以提供經由上部和下部板材的第一流體通道540並且提供通過下部板材的第二流體通道545。形成的第二通道可被配置以從容積537經由下部板材提供流體通路,並且第一流體通道540可與在板材與第二流體通道545之間與容積537流體隔離。容積537可經由氣體分配組合件535(如先前所論述的通道223)的側面流體進入。通道可與腔室中的通路耦合,所述腔室中的通路與腔室500的入口501分離。
氣體分配組合件535亦可用於電漿處理操作中,並且例如在實例中可與源或電氣接地(如電氣接地544)電氣耦合。藉由耦合氣體分配組合件535與電氣接地,氣體分配組合件535可具有與面板材523類似的電位,並且因此可防止電漿在兩個元件之間形成。在一些實施例中,面板材523和氣體分配組合件535可如示出直接接觸,並且均可與電氣接地耦合。底座565可與電源554耦合,與接地的氣體分配組合件535結合的所述電源可至少部分在半導體處理腔室的處理區域560內界定額外的電漿處理區域。藉由提供於晶圓水準的電漿處理能力,可
進行附加操作,如先前所論述的材料修改,以及可得益於電漿處理的蝕刻和沉積操作。
在一些實施例中,如上文所描述的電漿可在遠離處理區域的腔室區域中形成,如在電漿處理區域533中,以及在處理區域560內的電漿處理區域內。在實施例中,該等電漿區域各者可以是電容耦合的電漿配置,但是可包括其他電漿產生元件(如線圈)以提供電感耦合的電漿區域。可與電漿接觸的面板材、噴淋頭、腔室壁、間隔件、和底座可能被額外塗覆或調節以使元件劣化降至最低,所述元件之間可形成電漿。板材可額外包括較不可能劣化或受影響的組成物,包括陶瓷、金屬氧化物、或其他導電材料。
操作習用電容耦合的電漿(「CCP」)可能會劣化腔室元件,此舉可移除在基板上無意地分配的粒子。該等粒子可能影響由該等基板形成的裝置的效能,因為金屬粒子可提供整個半導體基板的短路。然而,在實施例中,所公開技術的CCP可於降低或實質上降低的電力/功率操作,並且可用以維持可由遠端電漿單元產生的電漿,而非在電漿區域內的電離物種。在其他實施例中,可操作CCP以電離遞送至此區域中的前驅物。例如,CCP可於低於或約1kW、500W、250W、100W、50W、20W、等等或更低的電力/功率位準操作。此外,CCP可產生平坦電漿輪廓,所述輪廓可在空間內提供均勻電漿
分配。如此,電漿流出物的更均勻流動可在下游遞送至腔室的處理區域。
於晶圓水準形成電漿可有益於如先前所論述的處理操作。然而,當元件(如氣體分配組合件535)作為部分電漿處理設備併入時,可能涉及對電漿形成的額外考慮。可包括第一流體通道540以允許將電漿流出物提供至腔室區域。為了提供足夠流動並減少與電漿流出物相互作用,通道可例如由增加的直徑(如大於或約2.5mm)表徵。然而,當氣體分配組合件535涉及電容耦合的電漿操作時,該等孔大小可能會帶來問題。
例如,電漿可一般在長度大於德拜(Debye)長度的區域中形成。當第一流體通道540由增加的直徑表徵時,則面對電漿處理區域的組合件的表面可能不提供整個表面的RF連續性。因此,電漿可在第一流體通道540內產生,並且亦可經由該等通道朝向面板材523回漏。氣體分配組合件535的一或更多個表面可能被塗覆或處理以減少來自電漿的劣化。類似地,面板材523的一或更多個表面可能被塗覆或處理以減少來自電漿的劣化。然而,在各個部件上塗覆或處理的表面可能不彼此面對。
例如,如圖5示出,可處理面對、靠近、或鄰近處理區域560的氣體分配組合件535的表面,但可不塗覆或處理面對面板材523的表面。類似地,可塗覆或處理面對、靠近、或鄰近電漿處理區域533的面板材523的表面,但可不塗覆或處理面對氣體分配組合件535的表面。
由此,洩漏至面板材523與氣體分配組合件535之間的區域中的電漿可能能夠劣化元件的未處理部分。儘管第一流體通道540的直徑可減少以防止此相互作用,此減少可增加與在電漿處理區域533中產生的電漿流出物的重組和相互作用。另一解決方案可包括併入額外的噴淋頭,所述噴淋頭具有在氣體分配組合件535與底座565之間的較小孔以減少電漿回流。然而,此解決方案在某些情況下可能是不可接受的,因為前驅物行進長度增加,並且因為額外的噴淋頭可產生使用氣體分配組合件所避免的相同重組。例如,在某些沉積操作中,可控制某些前驅物(如三甲矽烷基胺或者NH自由基或離子)的滯留時間以提供可接受沉積,並且流動路徑可相對不受阻礙以防止在元件上的沉積。藉由併入額外的噴淋頭,可增加流動路徑長度,且可阻礙流動路徑。
由此,本技術可藉由調節第一流體通道540本身改良該等情況。例如,根據本技術的噴淋頭或氣體分配組合件可包括流體通道,其中各個通道可由在通道的第一末端處的第一直徑表徵,並可由在通道的第二末端處的複數個埠表徵。下圖將論述示例性噴淋頭或根據本技術可在腔室內使用的氣體分配組合件,例如可用作腔室500的氣體分配組合件535。噴淋頭亦可用於包括其他電漿腔室的任何其他腔室中,所述腔室可得益於在本公開全文中論述的改良的控制。
圖6A示出了根據本技術的實施例的示例性噴淋頭600的俯視平面圖。噴淋頭600可包括在本公開全文中論述的元件中任一個或先前噴淋頭或面板材中任一個的特性中的任一個。如圖所示,噴淋頭600可包括第一板材610,所述第一板材界定整個第一板材610表面的複數個通孔620。第一板材610可以是或包括導電材料,所述導電材料可包括鋁、氧化鋁、其他金屬、其他金屬氧化物(例如氧化釔),或其他處理或塗覆的材料。例如,通孔620可示出如先前所描述的第一流體通道540的第一末端。例如,在實施例中,通孔620可由小於或約50mm的直徑表徵,並且可由小於或約40mm,小於或約30mm、小於或約20mm、小於或約15mm、小於或約12mm、小於或約10mm、小於或約9mm、小於或約8mm、小於或約7mm、小於或約6mm、小於或約5mm、小於或約4mm、小於或約3mm、小於或約2mm,或更小的直徑表徵。
通孔620在實施例中可由大於或約4mm的直徑表徵,以提供前驅物的足夠流動能力。例如,小於或約5mm的直徑可影響經由腔室流動的前驅物(包括在腔室的遠端區域中產生的電漿流出物)的重組或其他特性。由此,在一些實施例中,可維持通孔620的直徑大於或約2.5mm、大於或約3mm、大於或約3.5mm、大於或約4mm、大於或約4.5mm、大於或約5mm、大於或約5.5mm、大於或約6mm、大於或約6.5mm、大於或約7
mm、或者更大以防止對前驅物或電漿流出物產生更大影響。直徑亦可以是所提供或涵蓋的數量的任一個的組合,並且可以是包括在限定範圍的任一個內的範圍。根據噴淋頭600和孔620的大小,第一板材610可限定小於、大於、或約500個孔,並且在實施例中可限定小於、大於、或約1,000個孔、約2,000個孔、約3,000個孔、約4,000個孔、約5,000個孔、約6,000個孔、約7,000個孔、約8,000個孔、約9,000個孔、約10,000個孔、或更多。
通孔620亦可提供透過所形成的通道至第二板材650的視圖,所述第二板材可與第一板材610耦合。在一些實施例中,噴淋頭600可包括具有界定特徵的兩個以上板材、或僅單個板材。第二板材650可包括如透過第一板材610的通孔620觀察到的界定埠660。轉到圖6B,該圖示出了根據本技術的實施例的示例性噴淋頭600的仰視平面圖。該圖示出了噴淋頭600的第二板材650的視圖。如所提及,第二板材650可包括在整個第二板材650中界定的埠660,所述埠可被包括在透過噴淋頭600產生的流體通道的第二末端處。在實施例中,各個埠660可由直徑表徵,所述直徑小於通孔620的直徑。
如先前所解釋,埠660可防止電漿透過噴淋頭600洩漏並且亦可防止局部電漿操作的副產物透過噴淋頭600在上游流動。由此,在實施例中,埠660可由小於或約2mm的直徑表徵,並且在實施例中可由小於或約1.5mm、小於或約1.2mm、小於或約1.0mm、小於
或約0.9mm、小於或約0.8mm、小於或約0.7mm、小於或約0.6mm、小於或約0.5mm、小於或約0.4mm、小於或約0.3mm、小於或約0.2mm、小於或約0.1mm、或更小的直徑表徵。例如,埠660在實施例中可由約0.1mm與約1.2mm之間的直徑表徵,並在實施例中可由約0.2mm與約1mm之間的直徑表徵。較小埠660可提供跨噴淋頭600的改良的RF連續性,所述噴淋頭可例如作為接地電極操作。改良的RF連續性在實施例中可允許在噴淋頭600下方含有電漿,或在噴淋頭600下方實質上含有電漿。另外,較小埠660亦可防止反應副產物透過通孔620向上流動並接觸額外的部件。
如圖所示,埠660可被界定在跨板材650表面的埠組中。各組埠在實施例中可包括至少或約2個埠,並且在實施例中可包括至少或約3個埠、至少或約4個埠、至少或約5個埠、至少或約6個埠、至少或約7個埠、至少或約8個埠、至少或約9個埠、至少或約10個埠、至少或約11個埠、至少或約12個埠、至少或約13個埠、至少或約14個埠、至少或約15個埠、至少或約16個埠、至少或約17個埠、至少或約18個埠、至少或約20個埠、至少或約25個埠、至少或約30個埠、至少或約40個埠、至少或約50個埠、或更多埠。埠660和埠660組在實施例中可與通孔620對準以提供流體通道。在實施例中,各組埠660可與通孔620的中心軸軸向對準。
第二板材650亦可界定相對於通孔620定位的額外孔670,該等孔圖示為隱藏,因為側壁透過埠660不可見。孔670在實施例中可繞通孔620和埠660界定。孔670可與先前所描述的第二流體通道545類似,所述第二流體通道可提供從內部容積噴淋頭600的流體通路。由此,經由在第一板材與第二板材之間界定的容積流動的前驅物可透過孔670離開噴淋頭600,其中前驅物(所述前驅物可能是激發或未激發的前驅物)可隨後與已透過埠660流動的一或更多個前驅物相互作用,所述前驅物可包括在上游產生的電漿流出物。在實施例中,孔670可以具有相同大小或在與埠660相同的大小範圍內,所述埠亦可維持跨板材650的RF連續性。由此,孔670可以是在板材650中界定的第一複數個孔,並且埠660可以是在板材650中界定的第二複數個孔。如圖所示,可將孔670界定為跨噴淋頭600的組以提供來自在噴淋頭600內界定的容積的前驅物的流動均勻性。在實施例中,各組孔670可圍繞埠660組形成以提供從孔670和埠660流動的前驅物的更均勻接觸。在實施例中,各組可包括在如上文關於埠660論述的組內孔數量的任一個。
噴淋頭600可被包括在腔室(如腔室500)中,並且可與先前論述的氣體分配組合件535類似地定位。由此,可定位噴淋頭600使得第一板材610面向腔室蓋、或面向元件,如面板材523。第二板材650可面向處理區域或可鄰近處理區域,並且可至少部分界定處理區域
內的電漿處理區域,如具有底座或其他元件。由此,第二板材650可暴露至電漿,並且因此第二板材650的已暴露表面可在實施例中被塗覆或處理以保護噴淋頭600的第二板材不會被電漿劣化。在其他實施例中,第二板材650可能是或包括設計成耐電漿劣化的材料,並且可能不具有附加的塗層,所述第二板材可易於根據使用的材料製造。
圖7A示出了根據本技術的實施例的示例性噴淋頭600的橫截面圖。所示出的噴淋頭可包括先前所描述的特徵或特性的任一個。如圖所示,噴淋頭600可包括第一板材610和第二板材650。第一板材610可界定通孔620,所述通孔可與在第二板材650中界定的埠660對準以產生透過噴淋頭600的流體通道。埠660可被圍繞或具有圍繞如先前所描述的埠660的孔670。第一板材610與第二板材650可彼此耦合以界定在第一板材610與第二板材650之間的容積680。如圖所示,容積680可從孔670流體進入。另外,由通孔620和埠660形成的通道可與在第一板材610與第二板材650之間界定的容積流體隔離。
噴淋頭600可包括由通孔620和埠660形成的通道,所述通道可包括在第一板材610中於通孔620處的各個通道的第一末端,和在第二板材650中於埠660處的各個通道的第二末端。由此,若噴淋頭600可併入在腔室500內,如作為氣體分配組合件(如元件535)包括在內,則形成的通道的第一末端可面向蓋502或面板材
523。另外,形成的各個通道的第二末端可面向底座,並可例如靠近處理區域660。
第二板材650可界定通過第二板材650的結構的埠660,但埠660的厚度在實施例中可能不等於第二板材650的厚度。然而,在其他實施例中,埠660的長度可等於第二板材650的厚度。在其中埠660的長度不等於第二板材650的厚度的實施例中,可在第二板材650中包括一部分形成的通道,並且可某種程度上類似於埋頭孔結構,但是可在結構中包括多個埠660。第二板材650可由厚度690表徵,藉由所述厚度界定埠660。此厚度可小於第二板材650的厚度以減少對電漿流出物的影響,所述電漿流出物可經由形成的通道流動。
例如,若埠通過第二板材650的完整厚度形成,所述埠可影響經由形成的通道流動的前驅物或電漿流出物,此舉可增加重組、導致沉積過早發生、或其他後果。由此,在其中限定埠660的區域中第二板材650的厚度690在實施例中可能小於或約3mm,並且在實施例中可能小於或約2.5mm、小於或約2mm、小於或約1.8mm、小於或約1.6mm、小於或約1.5mm、小於或約1.4mm、小於或約1.3mm、小於或約1.2mm、小於或約1.1mm、小於或約1.0mm、小於或約0.9mm、小於或約0.8mm、小於或約0.7mm、小於或約0.6mm、小於或約0.5mm、小於或約0.4mm、小於或約0.3mm、小於或約0.2mm、或更小。另外,在其中形
成埠660的區域中第二板材650的厚度在實施例中可能在約0.1mm與約2mm之間、或可能在約0.4mm與約1.6mm之間,連同在任何所論述範圍內的更小範圍、或由所論述的任何數量形成的一些範圍。以此方式,埠可對經由通道流動的前驅物或電漿流出物具有減少或最小影響,所述通道經由噴淋頭600形成。此舉可提供優於包括如先前論述的另一噴淋頭的額外優點,因為此噴淋頭不能夠被加工為此減小的厚度,並且由此與在本公開全文中描述的埠相比可提供更多對前驅物或電漿流出物的影響。
轉到圖7B,示出了根據本技術的實施例的示例性噴淋頭700的橫截面圖。噴淋頭700可能以某種方式與噴淋頭600類似,並且可包括針對彼噴淋頭或針對所論述的其他噴淋頭或面板材的任一個所論述的特徵或特性的任一個。噴淋頭700不同於噴淋頭600之處在於在透過板材形成的通道的相對末端上可包括埠760。例如,噴淋頭700可包括第一板材710和第二板材750,當耦合時所述板材可界定第一板材710與第二板材750之間的容積780。第一板材710可界定通孔720的一部分並且第二板材750可界定通孔720的第二部分。第二板材750亦可界定孔770。孔770和通孔720可由先前針對各個面板材和噴淋頭所論述的尺寸或特徵的任一個表徵。
在一些實施例中,噴淋頭700可由第三板材755表徵,所述第三板材可在一表面上與第一板材710耦合,所述表面與耦合所述第三板材和第二板材750的表面
相對。在其他實施例中,第三板材755可以是第一板材710的一部分,所述第一板材可包括與先前所描述者類似的埋頭孔狀結構。第三板材755可界定埠760,所述埠可具有先前所描述的埠的特徵或特性的任一個。類似地,第三板材755的厚度790、或其中可形成埠760的第一板材710的區域可與先前所描述的厚度類似以限制與所產生的電漿流出物或前驅物相互作用,同時提供跨噴淋頭700的改良的RF連續性以減少或減弱經由噴淋頭700的電漿洩漏。在此示例性噴淋頭700中,可在腔室(諸如腔室500)中包括組件,所述腔室與氣體分配組件535類似。噴淋頭700可定位在腔室內,其中經過所述噴淋頭形成的通道的第一末端可面對處理區域560,同時通道的第二末端可面向蓋502或面板材523。
圖8A示出了根據本技術的實施例的示例性噴淋頭700的俯視平面圖。如圖所示,代替包括通孔,可以是第一板材710的一部分的第三板材755可界定透過所述板材的複數個孔760,所述孔可以是如先前論述的埠。複數個孔760可界定在第一複數組孔中,所述第一複數組孔可包括第一複數個孔的至少兩個孔。所述組可包括如先前描述的任何數量孔。
圖8B示出了根據本技術的實施例的示例性噴淋頭700的仰視平面圖。所示出的視圖包括第二板材750,所述第二板材在實施例中可與第一和/或第三板材耦合。第二板材750可界定複數個通孔720,所述通孔可
提供進出示出的第三板材755中界定的埠760的通路。各個通孔可與來自第一複數個孔的至少一組孔對準以產生通道,所述通道可包括先前描述的特性的任一個。第二板材750亦可限定多個第二孔770,所述第二孔可提供進出噴淋頭的內部容積的通路。孔可限定或排列在先前論述的圖案的任一個中。
上文描述的腔室和電漿源可用於一或更多種方法中。圖9示出了根據本技術的實施例的示例性方法900的操作。方法900可包括於操作905使一或更多種前驅物流動至腔室中。腔室可與先前所描述的腔室的任一個類似,並且可包括噴淋頭,如所論述的噴淋頭的任一個。例如,前驅物可從入口組合件或從附加通路(如從進出噴淋頭的板材之間的容積的通路)流動。前驅物可流動至可於操作910形成電漿的處理區域中。電漿在實施例中可形成為電容耦合的電漿,並且電極可包括底座,其上定位基板以及噴淋頭,如先前所描述。在至少部分由噴淋頭界定的處理區域內可含有、實質上含有、或基本上含有所形成的電漿。例如,噴淋頭可具有諸如先前所描述的特徵或特性使得於操作915控制或減弱透過噴淋頭的電漿洩漏。
腔室和噴淋頭亦可用於操作中,其中提供前驅物或遠端產生的電漿流出物,如在腔室外部,或在位於腔室的處理區域上游的腔室區域內。例如,電漿流出物可能在如先前描述的噴淋頭與面板材之間產生。電漿流出物可透過噴淋頭流動,所述噴淋頭包括透過噴淋頭界定的通
道。通道可由具有第一直徑的第一末端和包括數個埠的第二末端表徵,其中各個埠可由小於第一直徑的直徑表徵。通道的任一末端可靠近其中定位基板的處理區域。電漿流出物可透過通道流動,所述通道對重組的影響可能受限,至少部分歸因於通道尺寸和埠長度。另外,流出物可在處理區域內進行蝕刻和/或沉積,並且可防止副產物透過通道上游流動至面板材。藉由在較大通道的末端處將埠包括在限定的材料厚度內,與習用噴淋頭相比,本技術的噴淋頭可改良該等操作的任一個,本技術的噴淋頭可提供透過噴淋頭通道的電漿和副產物洩漏。
在先前描述中,出於解釋的目的,已闡述諸多細節以提供對本技術的各個實施例的理解。然而,為熟習本領域技術人員顯而易見的是,某些實施例可無需一些該等細節而得以實踐,或使用附加細節而得以實踐。
已公開了數個實施例,熟習本領域技術人員將意識到可使用各種修改、替代構造、和等效物而不脫離所述實施例的精神。另外,未描述數個熟知製程和元件以避免不必要地混淆本技術。相應地,上文描述不應被視為限制本技術的範疇。
當提供數值範圍時,應理解,除非本文另外明確指明,亦具體地公開了在所述範圍的上下限之間的每個中間值,精確到下限最小單位分數。在所述範圍內的任何所述值或未聲明的中間值與在彼所述範圍中的任何其他所述值或中間值之間的任何更小的範圍均涵蓋在內。彼等
較小範圍的上限和下限可獨立地包括在範圍內或排除在範圍外,並且任一個限值、沒有一個限值或者兩個限值包括在更小範圍中的每個範圍亦涵蓋在本技術內,以所述範圍中任何特定排除的限制為準。所述範圍包括限制中的一個或兩個時,亦包括排除彼等所包括的限值中的任一個或兩個的範圍。
在本文和所附專利申請範圍中所使用,除非上下文另外明確指明,單數形式「一(a/an)」和「所述(the)」包括複數引用。因此,例如,對「一孔(an apertures)」的引用包括複數個該等孔,並且對「前驅物(the precursor)」的引用包括引用熟習本領域技術人員已知的一或更多種前驅物和其等效物、等等。
此外,當用於本說明書和所附專利申請範圍中時,詞語「包含(comprise(s))」、「包含(comprising)」、「含有(contain(s))」、「含有(containing)」、「包括(include(s))」、和「包括(including)」意欲規定存在所述特徵、整數、元件、或操作,但上述各者不排除存在或添加一或更多個其他特徵、整數、元件、操作、功能、或群組。
500:處理系統
501:入口
502:腔室蓋
503:腔室外殼
507:孔
509:面板材
510:間隔件
511:混合區域
515:第一噴淋頭
517:孔
519:RF源
523:板材
524:孔
533:電漿處理區域
534:電氣接地
535:氣體分配組合件
537:容積
539:嵌入式加熱器
540:第一流體通道
544:電氣接地
545:第二流體通道
554:電源
555:基板\晶圓
560:處理區域
565:底座
Claims (15)
- 一種半導體處理腔室,包含:一腔室外殼,至少部分界定該半導體處理腔室的一內部區域,其中該腔室外殼包含一蓋;一底座,配置成支撐在該半導體處理腔室的一處理區域內的一基板;一第一噴淋頭,定位在該半導體處理腔室內,該第一噴淋頭包含耦合在一起的至少兩個板材以界定在該至少兩個板材之間的一容積,其中該至少兩個板材至少部分界定穿過該第一噴淋頭的通道,其中該至少兩個板材之間的該容積與該等通道流體隔離,其中每個通道由在該通道的一第一末端處的一第一直徑表徵並由在該通道的一第二末端處的複數個埠表徵,其中該第一噴淋頭界定複數個孔,該複數個孔界定從該至少兩個板材之間的該容積的流體通路,其中每個通道分別被該複數個孔中的孔的子集圍繞,其中每個孔的子集包含相等數量的孔,及其中該第一噴淋頭定位在該半導體處理腔室內,該第一噴淋頭使每個通道的該第一末端面對一面板材,並使每個通道的該第二末端靠近該半導體處理腔室的該處理區域;以及一第二噴淋頭,與一電源耦合,其中該第二噴淋頭定位在該半導體處理腔室內在該蓋與該處理區域之 間。
- 如請求項1所述的半導體處理腔室,其中每個埠由小於該第一直徑的一直徑表徵。
- 如請求項1所述的半導體處理腔室,其中該面板材與電氣接地耦合,其中該面板材定位在該半導體處理腔室內在該第二噴淋頭與該處理區域之間。
- 如請求項3所述的半導體處理腔室,其中該面板材與該第一噴淋頭直接接觸,並且其中該面板材和該第一噴淋頭與電氣接地耦合。
- 如請求項3所述的半導體處理腔室,其中該半導體處理腔室進一步包含在該第二噴淋頭與該面板材之間的一間隔件,並且其中該第二噴淋頭、該面板材、和該間隔件被配置成至少部分界定在該半導體處理腔室內的一電漿處理區域。
- 如請求項1所述的半導體處理腔室,其中該底座與一電源耦合,並且其中該第一噴淋頭與電氣接地耦合。
- 如請求項6所述的半導體處理腔室,其中該底座和該第一噴淋頭被配置成至少部分界定在該半導體處理腔室的該處理區域內的一電漿處理區域。
- 如請求項1所述的半導體處理腔室,其中該第一噴淋頭的一表面鄰近該半導體處理腔室的該處理 區域,並且其中該表面經塗覆。
- 如請求項1所述的半導體處理腔室,其中該第一直徑是至少約2.5mm,並且其中每個埠的直徑小於或約1.2mm。
- 一種半導體處理腔室,包含:一腔室外殼,至少部分界定該半導體處理腔室的一內部區域,其中該腔室外殼包含一蓋;一底座,配置成支撐在該半導體處理腔室的一處理區域內的一基板;一第一噴淋頭,定位在該半導體處理腔室內,該第一噴淋頭包含耦合在一起的至少兩個板材以界定在該至少兩個板材之間的一容積,其中該至少兩個板材至少部分界定穿過該第一噴淋頭的通道,其中該至少兩個板材之間的該容積與該等通道流體隔離,其中每個通道由在該通道的一第一末端處的一第一直徑表徵並由在該通道的一第二末端處的複數個埠表徵,其中該第一噴淋頭界定複數個孔,該複數個孔界定從該至少兩個板材之間的該容積的流體通路,其中每個通道分別被該複數個孔中的孔的子集圍繞,其中每個孔的子集包含相等數量的孔,及其中該第一噴淋頭定位在該半導體處理腔室內,該第一噴淋頭使每個通道的該第一末端靠近該半導體處理腔室的該處理區域,並使每 個通道的該第二末端面對一面板材;以及一第二噴淋頭,與一電源耦合,其中該第二噴淋頭定位在該半導體處理腔室內在該蓋與該處理區域之間。
- 一種電漿處理腔室,包含:一第一噴淋頭,包含:一第一板材,界定複數個通孔;以及一第二板材,與該第一板材耦合,其中該第二板材界定一第一複數個孔和一第二複數個孔,其中該第二複數個孔被界定為在該第二板材中的複數組孔,該複數組孔包括該第二複數個孔中的至少兩個孔,其中該第一板材的每個通孔與該複數組孔中的至少一組孔對準以產生一通道,其中該第一板材與該第二板材彼此耦合以界定在該第一板材與該第二板材之間的一容積,其中該容積從該第二板材的該第一複數個孔流體進入,其中該等通道與在該第一板材與該第二板材之間界定的該容積流體隔離,其中該第一複數個孔被界定為在該第二板材中的複數個第一組孔,其中每個第一組孔包括該第一複數個孔中的至少四個孔,其中每個第一組孔環繞一單獨的通道,及其中該第一噴淋頭定位在該電漿處理腔室內,該噴淋頭使每個通道的一第一末端面對一面板材, 並使每個通道的一第二末端靠近該電漿處理腔室的一處理區域;以及一第二噴淋頭,與一電源耦合,其中該第二噴淋頭定位在該電漿處理腔室內在該腔室的一蓋與該處理區域之間。
- 如請求項11所述的電漿處理腔室,其中每個通孔由至少約5mm的直徑表徵。
- 如請求項11所述的電漿處理腔室,其中該第二複數個孔中的每個孔由小於或約1mm的直徑表徵。
- 如請求項11所述的電漿處理腔室,其中該第二複數個孔中的每組孔包括至少約6個孔。
- 如請求項11所述的電漿處理腔室,其中該第二板材包含一耐電漿劣化的材料。
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