CN107210250B - 用于等离子体处理系统的高温夹盘 - Google Patents

用于等离子体处理系统的高温夹盘 Download PDF

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CN107210250B
CN107210250B CN201680008411.2A CN201680008411A CN107210250B CN 107210250 B CN107210250 B CN 107210250B CN 201680008411 A CN201680008411 A CN 201680008411A CN 107210250 B CN107210250 B CN 107210250B
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T·Q·特兰
S·马立克
D·卢博米尔斯基
S·N·罗伊
S·小林
T·S·周
S·朴
S·文卡特拉曼
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Abstract

一种晶片夹盘组件包括吸盘、轴和基底。绝缘材料界定吸盘的顶表面；加热器元件嵌入在绝缘材料内；并且导电板位于绝缘材料下方。轴包括：与板耦接的外壳；以及用于加热器元件和电极的电连接器。导电基底外壳与轴外壳耦接；并且连接器通过在基底外壳内的端子块。一种等离子体处理的方法，包括以下步骤：将工件装载至具有绝缘顶表面的夹盘上；提供跨顶表面内的两个电极的DC电压差分；通过使电流通过加热器元件来加热夹盘；在环绕夹盘的腔室中提供工艺流体；以及在夹盘下方的导电板与腔室的一个或多个壁之间提供RF电压。

Description

用于等离子体处理系统的高温夹盘
技术领域
本公开广泛地应用于等离子体处理装备领域。更具体地，公开了用于在工件上提供空间上均匀的等离子体处理的系统和方法。
背景技术
集成电路和其他半导体产品通常在称为“晶片”的基板的表面上制造。有时，处理在载体中固持的晶片群上执行，而其他时候处理和测试一次在一个晶片上执行。当执行单晶片处理或测试时，晶片可定位在晶片夹盘上。其他工件也可以在类似的夹盘上被处理。
发明内容
在实施例中，一种晶片夹盘组件包括吸盘、轴和基底。吸盘包括：电绝缘材料，界定吸盘的顶表面；加热器元件，嵌入在电绝缘材料内；以及导电板，设置为邻近于电绝缘材料。轴包括：导电轴外壳，与板电耦合；以及多个连接器，包括用于加热器元件的电连接器和用于电极的电连接器。基底包括：导电基底外壳，与轴外壳电耦合；以及电绝缘端子块，设置在基底外壳内，多个连接器通过端子块。
在实施例中，一种等离子体处理的方法，包括以下步骤：将工件装载至具有电绝缘顶表面的夹盘上；提供跨电绝缘顶表面内的两个空间分隔的电极的DC电压差分，以将工件夹持至夹盘；以及通过使电流通过嵌入在夹盘中的加热器元件来加热夹盘和工件。方法进一步包含以下步骤：在环绕夹盘的腔室中提供工艺流体；以及在夹盘下方的导电板与腔室的一个或多个壁之间提供RF电压，以从工艺气体点燃等离子体。
附图说明
图1示意性地显示根据实施例的晶片处理系统的主要元件。
图2是根据实施例的图1中所示的晶片夹盘的示意图，示出所述晶片夹盘的示例性组成部分。
图3是根据实施例的等离子体晶片处理系统的示意图，示出所述等离子体晶片处理系统的示例性组成部分，所述等离子体处理系统包括晶片夹盘。
图4是图3的等离子体晶片处理系统的一部分的示意图，所述部分包括晶片夹盘和晶片夹盘中的扩散器的多个部分，并且显示至所述等离子体晶片处理系统的示例性功率供应器连接。
图5示出根据实施例的在处理中的晶片的部分。
图6示出当图5的晶片部分暴露于不引导离子的等离子体时的假设结果。
图7示出根据实施例的、当图5的晶片暴露于引导离子的等离子体时的结果。
具体实施方式
本公开可通过参照下文所描述的附图的具体实施方式来理解，在附图中，贯穿若干附图的类似附图标记指类似的部件。应当注意，为了说明清楚的目的，附图中的一些元件可不按比例绘制。可通过使用括号中的数字来指代项的特定实例(例如，连接器230(1)、230(2)等)，而没有括号的竖直指代任何此类项(例如，连接器230)。在示出项的多个实例的情况下，为了说明的清楚起见，可仅标记这些实例中的一些。
本文中的实施例提供用于晶片处理系统的新的和有用的功能。多年来，半导体晶片的尺寸已增加，同时特征尺寸已显著地降低，使得对于每个经处理的晶片可获得具有更多功能的更多集成电路。典型的晶片直径从1970年代的约2或3英寸增加至2010年代的12英寸或更高。在相同的时间范围内，商用集成电路的典型最小特征尺寸从约5微米减小到约0.015微米。处理较小的特征同时晶片变得更大需要对处理均匀性的显著改善。由于化学反应速率通常是温度敏感的，因此在处理期间跨晶片的点对点的温度控制正变得更重要。例如，在某些类型的处理中，在晶片内几摄氏度的点对点温度差在过去可能是可接受的，但现在这种差异可能需要被保持在大约一度或更小。在集成电路和其他器件的制造中所使用的某些材料也可能在大腐蚀性的等离子体环境中需要非常高温的处理。除晶片外的其他工件的等离子体处理也可受益于改善的处理均匀性，并且被视为在本公开的范围内。因此，本文中作为“晶片夹盘”以保持“晶片”的夹盘之特性应理解为等同于用于固持任何种类工件的夹盘，类似地，“晶片处理系统”等同于处理系统。
图1示意性地示出晶片处理系统100的主要元件。系统100被描绘为单个晶片，半导体晶片处理系统，但是对于本领域技术人员将显而易见的是，本文中的技术和原理适用于任何类型的等离子体处理系统(例如，处理其他类型的工件(不一定是半导体或晶片)的系统)。还应理解，图1仅示意性地示出系统100经选择的主要元件；因此相比系统100，实际的处理系统将看起来不同，并可能包含附加元件。
晶片处理系统100由一个或多个设施服务，所述设施诸如(多个)工艺流体10、外部功率20和真空30。晶片处理系统100包括外壳110和晶片接口115，所述晶片接口从外部来源接收晶片50并将晶片50定位在处理位置160内。晶片处理系统100还可包括用户接口145和控制器135，控制器135典型地包括微处理器、存储器等，可从以从用户接口145和/或其他源获得输入，并提供对晶片处理系统100的硬件元件的基于计算机的控制。控制器135可通过一个或多个数据链路40与外部网络和/或计算机对接，所述一个或多个数据链路40可以是实体的(电线或光纤连接器)或无线的连接。晶片处理系统100还可包括一个或多个内部功率供应器150，所述一个或多个内部功率供应器150变换或调节由外部功率20供应的功率，供由系统的硬件元件使用。
处理位置160将每一个晶片50接收到晶片夹盘170上，在实施例中，晶片夹盘170包括三个部分：吸盘175、支撑吸盘175的轴180以及支撑轴180的基底185。晶片50实体地定位在吸盘175上，并且在实施例中，通过吸盘175被加热、冷却和/或机械地固持。晶片夹盘170也经配置以将射频(RF)和/或直流(DC)电压耦合至晶片50，以便将晶片50静电夹持到吸盘175，以便在处理位置160内生成等离子体和/或以便将反应性离子从等离子体引导到晶片50。处理位置160因此使晶片50暴露于“等离子体产物”，“等离子体产物”在本文中定义为作为等离子体的部分或一度是等离子体的部分的任何材料。等离子体产物可包括曾是等离子体的部分但未转换为离子、自由基等的任何或所有的离子、自由基、源气体的分子片段、其他活性物质和/或源气体原子或分子。在任何时刻尚未形成等离子体的部分的气体在本文中被定义为“未活化气体”。
在实施例中，吸盘175和/或轴180也经配置以操控晶片50，用以接取晶片搬运(handling)工具。例如，在实施例中，轴180可升高吸盘175用于在吸盘175上接收晶片50，并随后将吸盘175降低到另一高度用于处理，或相反。在这些或其他实施例中，吸盘175和/或轴180可包括致动器，所述致动器相对于吸盘175的顶表面升高或降低晶片50，所述致动器诸如可从吸盘175延伸或在吸盘175内缩回的举升销，使得晶片工具可被插入在晶片50与顶表面之间。轴180还可促进与吸盘175的电性和/或流体连接。基底185将轴180机械地锚定在外壳110内，并且在实施例中，提供用于电性设施和/或流体至轴180的接口。基底185、轴180和吸盘175的多个部分或它们的任何组合可相对于彼此单片地形成，或可由组成部分部分地或完全地组装，如下文中进一步所述。
图2是晶片夹盘170的示意图，示例晶片夹盘170的示例性组成部分。为了说明的清楚起见，图2未按比例绘制，晶片夹盘170的某些部件在尺寸上被放大或缩小，并且不是每一部件的每个实例都被标记，并且不是在部件之间的所有内部连接都被显示。如按照图1，晶片夹盘170的区域被标识为吸盘175、轴180和基底185，但是晶片夹盘170的某些部件可重叠这些区域中的两或更多个。吸盘175包括绝缘顶部205，电极210和加热器元件215嵌入在绝缘顶部205中。顶部205可由陶瓷或其他电绝缘材料形成；例如，在实施例中，顶部205由氮化铝或氧化铝形成。电极210和加热器元件215可由能承受高温的导电性和/或电阻性材料所形成，例如诸如，氧化钨。顶部205内的任选的通道207使热传递气体(诸如，氦)与晶片50的背侧接触以改善顶部205与晶片50之间的热传递。改善的热传递可在晶片是不完全平坦的且因此不与顶部205的顶表面均匀接触的的情况下有帮助，和/或将晶片上点对点的热均匀性从几度的范围改善到一度或更小的范围。任选的通道208与通道207互连，并且在顶部205的顶表面内彼此互连，使得热传递气体可在晶片50的底表面与顶部205之间散布，直到气体通过晶片50的外边缘。
可由金属(例如，铝或铝的合金)形成的导电板220是设置在顶部205下方并靠近顶部205。在实施例中，顶部205和板220通过间隙217分隔，以允许跨越宽温度范围(如，从当夹盘170未使用时的室温一直到用于特定工艺的约450℃)的这两者的不同热膨胀。间隙217不必是连续的，即，顶部205和/或板220可形成用于在顶部205与板220之间的机械支撑的脊或通道，其中即使此类脊或通道存在的，间隙也被视为存在。间隙217因此暴露于在顶部205和板220的外边缘处的工艺气体和/或等离子体产物。惰性气体(诸如，氮或氦)可被提供作为用于间隙217的净化气体，从而在间隙217内提供相对于周围工艺腔室的正压力，以保持气体和/或等离子体产物远离顶部205、板220的内表面以及轴180内的相应表面。在实施例中，间隙217将顶部205和板220分开约0.5至1.5毫米。
在轴180中，导电轴外壳222在顶部205下方，并形成用于轴180的外壳222。轴外壳222也可由例如铝制成；板220和轴外壳222电耦合，并且可以一体地形成，如图2中所示，或可通过紧固或接合组成部分来组装。轴外壳222容纳任选的绝缘衬垫225，所述绝缘衬垫225例如由陶瓷材料(诸如，AlN或Al2O3)所制成，帮助保持内部部件免于短路或拉弧至轴外壳222。绝缘衬垫225可任选地以惰性气体(诸如，氦或氮)冲刷，以去除热或稀释并去除当往返于夹盘170传送晶片时可能进入夹盘表面的工艺气体。
轴180还容纳在装备的功率供应器和其他设施之间多个连接器230，和吸盘175的特征结构，夹盘170位于所述装备中。图2中示出的示例性连接器230包括射频/直流(RF/DC)端子230(1)、230(2)；直流(DC)探测中心抽头端子230(3)；内区域加热器端子230(4)、230(5)；外区域加热器端子230(6)、230(7)；以及热电偶(TC)或电阻温度检测器(RTD)导线230(8)(例如，两元件的导线，在图2中示意性地示出为单个连接器)。在实施例中，其他连接器230是可能的。连接器230可以是单个的或双绞的导线、棒、同轴的或其他连接器，并且可以是绝缘的或非绝缘的。在实施例中，同轴连接器230可包括内导体、绕内导体的绝缘层、绕绝缘层的接地管以及绕接地管的陶瓷管。TC或RTD能以任何数量来实现，并且可任选地针对由以下各项导致的对温度变化的敏感性来组织：各种加热器区域的操作；通过等离子体或等离子体产物的加热；通过与流动气体或等离子体产物的相互作用导致的加热或冷却；或其他原因。在实施例中，夹盘170的特征可确定温度跨夹盘170的给定结构是均匀的，使得单个TC或RTD准确地呈现表示170的温度。在其他实施例中，多个TC或RTD可用于监测跨夹盘170的温度，从而提供可用于自动地和/或手动地调整加热器区域或夹盘170所位于的等离子体处理系统的其他方面的操作的信息，从而促进温度均匀性。
连接器230还可以是流体导管。此外，或者除了将连接器230配置为流体导管，轴外壳222、绝缘衬垫225和/或在轴外壳222与绝缘衬垫225之间的空间可配置有流体通路(passage)。例如，图2示出上文讨论的在轴外壳222与绝缘衬垫225之间的间隙217(如上文所讨论)，连接到基底185的净化气体源285(1)。此外，背侧气体源285(2)将氦或其他惰性气体供应至通道(channel)207，以实现跨晶片50的改善的热控制。
图2中的连接器230的数量和布置仅是示意性的；出于多种目的，连接器230能以不同方式布置且往往将以不同方式布置，多种目的诸如，最小化轴180的尺寸，最大化相邻连接器230之间的空间，改善温度均匀性和/或热耗散，以及其他原因。
夹盘170的基底185包括导电基底外壳270，所述导电基底外壳270可由金属(例如，铝)制成，并且可与轴外壳222一体地形成，或通过紧固件、焊接等组装至轴外壳222。在实施例中，基底外壳270包括电绝缘端子块275，连接器230(1)-230(8)通过所述电绝缘端子块275。端子块275用于对准连接器230(1)-230(8)，使得它们各自的远端被布置为与吸盘175内的相应的插座匹配。端子块275可由绝缘体(诸如，聚醚醚酮(PEEK)或陶瓷，这两者在高温时都提供良好的电阻和稳定性)形成。
基底外壳270可包括通道(诸如，如图所示的在基底外壳270中用于加热/冷却流体的通道280)。通过通道280的加热/冷却流体可以是气体或液体中的任一者。在实施例中，通过通道280的加热/冷却流体是水和乙二醇或丙二醇的混合物，具有约50％的水、50％乙二醇的混合比例。在实施例中，通过通道280提供的冷却不仅冷却基底外壳270，而且还冷却轴外壳222以及与轴外壳222机械连接的导电板220。有利地，间隙217和在间隙217中提供的净化气体用于将板220与在顶部220内达到的最高温度隔绝；此外，轴外壳222的金属可以比仅用于机械目所需的厚度更厚，以提供从板220向下至基底外壳270的高的热传递，其中由通过通道280的冷却流体来去除热。例如，在实施例中，轴外壳222可以是1.5mm、2.0mm、2.5mm或更厚。
基底185可固定在晶片处理装备的相关联的部分内，或可使用滑动件、铰链或其他装置可移动地被装配以定位吸盘175，从而根据需要传送或接收晶片或其他工件和/或对准晶片或工件。
图3是包括晶片夹盘170的等离子体晶片处理系统300的示意图，示出等离子体晶片处理系统300的示例性组成部分。为了说明的清楚起见，图3未按比例绘制，等离子体晶片处理系统300的某些部件在尺寸上被放大或缩小；不是每一部件的每个实例都被标记；并且不是在部件之间的所有内部连接都被显示。等离子体晶片处理系统300是图1的晶片处理系统100的示例。等离子体晶片处理系统300使用等离子体产物和/或未活化气体在工艺腔室305内处理晶片50；图3将等离子体产物的流示出为空心箭头，并且将未活化气体的流示出为实心箭头。任选的远程等离子体源310从第一输入气体流10(1)生成第一等离子体(未示出)，并且任选地将所产生的等离子体产物与第二输入气体流10(2)混合，从而将等离子体产物朝扩散器320传送。等离子体产物可通过其他任选的扩散器320、325和340，所述扩散器320、325和340至少用于在等离子体产物被引入至工艺腔室305之前，均匀地分配这些等离子体产物。在所示配置中，第一功率150(1)跨扩散器325与340之间的空间330提供RF能量，从而在空间330中形成第二等离子体335。来自第一和第二等离子体的等离子体产物可任选地通过进一步的扩散器350(有时被称为“喷淋头”)来与进一步的输入气体流10(3)混合。扩散器350配置有大端口和气体通路360，所述大端口用于使等离子体产物通过此大端口，所述气体通道360传送输入气体流10(3)通过仅面向工艺腔室305的扩散器350的侧。将理解，任何或全部的远程等离子体源310和扩散器320、325、340和350的使用都是任选的。
第二功率供应器150(2)受控地配置以通过连接器230(1)和230(2)将RF能量和/或DC偏压提供至夹盘170内的电极210(1)和210(2)(如示意性地所示)，并提供至处理系统300的其他部分。RF能量和/或DC偏压的具体连接可变化，如下文中进一步所讨论。功率供应器150(2)可跨电极210(1)和210(2)提供例如DC偏压，并且可在电极210(1)和210(2)和处理系统300的其他部件之间提供RF能量和/或DC偏压，如由功率供应器150(2)与扩散器350之间的连接151所指示。提供RF能量和DC偏压两者对于将晶片50(或任何其他工件)静电夹持至夹盘170，对于在工艺腔室305内生成等离子体以及对于将等离子体的离子引导至晶片50上的一些处理部位两者都是特别有用的，如下文中进一步所讨论。典型的DC夹持电压为传送到相对电极210(1)和210(2)的±200V，而典型的RF电压是跨工艺腔室305的±75V(施加到等离子体的RF功率为约100W-500W)。在图4中更详细地示出处理系统300的部分。
图4是等离子体晶片处理系统300的示意图，等离子体晶片处理系统300包括晶片夹盘170和扩散器350的部分，并且示出至晶片夹盘170和扩散器350的示例性功率供应器连接。为了说明的清楚起见，图4未按比例绘制，等离子体晶片处理系统300的某些部件在尺寸上被放大或缩小；不是每一部件的每个实例都被标记；并且不是在部件之间的所有内部连接都被显示。图4示出由扩散器350和夹盘170的相应部分界定的工艺腔室305的部分、晶片50、工艺腔室305内的等离子体355以及功率供应器150(2)的示例性细节。等离子体355从气体流10(1)、10(2)和/或10(3)中生成，所述气体流10(1)要么处于它们的原始、未活化的形式，要么作为在远程等离子体源310中或在空间330内形成的等离子体产物(图3)。用于形成等离子体355的RF能量由功率供应器150(2)内的RF源390供应。在图4中所示的配置中，功率供应器150(2)也提供跨电极210(1)和210(2)的DC偏压370，所述DC偏压370用于将晶片50静电夹持到晶片夹盘170。在图4中以以虚线箭头示出DC电场。图4中所示的实施例还包括在电极210与扩散器350之间的任选的DC偏压380。DC偏压380可引导在等离子体355中形成(或如上文所讨论，存在于来自其他位置的等离子体产物中)的离子朝向晶片50，以影响于晶片50上的等离子体处理的方向性(参见图5至图7)。
图4还示出中心抽头DC探针395，所述DC探针395可被监测以确定晶片50的实际背侧DC电压。DC探针395上测得的电压可被测量和用于控制DC偏压380，以控制并优化对晶片50的工艺结果。例如，当执行等离子体处理时，等离子体产物内的反应性物质通常为带负电的离子，当带负电的离子反应时，带负电的离子可将负电荷传送到晶片50。这导致晶片50的充电；在处理期间由晶片50获得的典型的DC电压可以是大约-50V。中心抽头DC探针395允许此电压被感测，并因此通过调节DC偏压380而被相应地补偿。因此，DC探针395与高阻抗电路398耦接，高阻抗电路398测量DC探针395上的电压，并提供供功率供应器150(2)调节DC偏压380的合适信息。
与可能利用不与高温相容的材料(诸如，某些聚合物或塑料、橡胶等)的较早系统相比，晶片夹盘170的所有部件和与晶片夹盘170整合的所有部件与非常高温的操作相容。暴露于等离子体的部件也能够存活于非常严苛的等离子体环境中(诸如，当NH3或NF3分别用作源气体时所产生的H*或F*自由基等)。O2通常也作为源气体来添加(以供应电子，从而促进等离子体点燃)，从而产生进一步的离子物质和自由基。较早的系统经常使用不锈钢夹盘，但是不锈钢通常在此类环境中腐蚀，从而导致颗粒污染。在处理系统300内的晶片夹盘170的布置是独特的，体现在它允许处理在均匀的、高温环境下发生，同时还提供用于热传递的坚固的静电夹持以及引导反应性离子物质朝向工件的能力而没有腐蚀或热降级。例如，通过对部件的适当尺寸设定(例如，轴外壳222的厚度和在间隙217内的净化气体的流率)，本文中的实施例能够操作于高达500℃，从而促进在晶片50上对一些金属和/或陶瓷材料的等离子体蚀刻。
图5、图6和图7示出利用本文中所述的晶片夹盘和晶片处理系统而可获得的示例性处理结果。图5示出在处理中的晶片50(1)的部分。晶片50(1)已被处理以在晶片50(1)中形成深沟槽410，并且膜400(1)已经既沉积在晶片50(1)的顶表面上又沉积在沟槽410中。后续处理旨在从晶片50(1)的某些区域去除膜400(1)，但在其他区域上留下膜400(1)；光阻420因此被提供在膜400(1)将保持的区域中。
图6示出当晶片50(1)被暴露于不引导离子的等离子体时的假设结果，例如，通过使晶片50(1)暴露于反应性物质通过扩散而被简单地随机引导之处的等离子体。易于被暴露于反应性物质的膜400(1)的表面被蚀刻，而晶片50(1)不与反应性物质反应。此工艺使所得的晶片50(2)留有受光阻420保护的膜400(4)，但也在沟槽410内留下残余材料400(3)。这种情况发生是因为反应性物质简单地行进，直到它们遇到某物，随后在它们降落之处反应。很少的反应性物质碰巧正在深深地穿入沟槽410中所需的确切方向上行进。使用随机定向的反应性物质，足够长久地蚀刻晶片50(1)以去除残余材料400(3)是有可能或不太可能的，并且通常是不切实际的。
图7示出出当晶片50(1)暴露于通过提供电场引导离子的等离子体时的结果，所述电场导引离子朝向晶片50(1)；即，如图3和图4中所示，使用晶片夹盘170。图4中所指示的电场导引带负电的反应性物质在图7中的定向中朝下，使得反应性物质中的较多反应性物质到达沟槽410内的膜400(1)的较低区域。所得的晶片50(3)仅在原始膜400(1)受光阻420保护的位置中的膜400(4)，如图所示。
本文中所述的晶片夹盘中使用的设计和的材料的类型不是那些通常被认为晶片夹盘的那些材料。在过去，晶片夹盘往往是相当简单的事情，从单纯的金属板坯到提供真空或静电夹持、可调整的晶片对准/定位等的略微更复杂的系统。保留所有的这些功能但在高腐蚀性的等离子体环境中以非常高的温度操作而不会降级的设计是未知的。
已描述若干实施例，本领域技术人员将认知到，各种修改、替换构造和等效方案可被使用而不背离本发明的精神。此外，未描述众多公知的工艺和要素，以避免不必要地模糊本发明。因此，上述描述不应被视为限制本发明的范围。
在提供数值范围的情况下，应理解，还具体地公开了在那个范围的上限和下限之间的每个中间数值(除非上下文另外清楚地指示，否则到下限单位的十分之一)。在所宣称范围中的任何所宣称数值或中间数值和在那个所宣称范围中的任何其他所宣称数值或中间数值之间的每个较小范围也被涵盖。这些较小范围的上限和下限可独立地被包括或排除在该范围内，并且在上下限中的任一者、两者都不或两者都被包括在较小范围时的每个范围也被涵盖在本发明内，受到在所宣称的范围中任何具体排除的限值的约束。在所宣称的范围包括上下限中的一者或两者时，也包括排除那些所包括的上下限中的任一者或两者的范围。
如在本文中和在所附权利要求书中所使用，除非上下文另外明确地所指，否则单数形式“一(a)”、“一个(an)”和“该(the)”包括多个对象。因此，例如对“一工艺”的引用包括多个此类工艺，并对“该电极”的引用包括一个或多个电极以及为本领域技术人员所知的它们的等效元件，以此类推。此外，当在说明书和所附权利要求书中使用时，单词“包含(comprise)”、“包含(comprising)”、“包括(include)”、“包括(including)”和“包括(includes)”旨在指明所宣称的特征、整体、部件或或步骤的存在，但它们不排除一个或多个其他特征、整体、部件、步骤、动作或群组的存在或增加。

Claims (13)

1.一种设置在晶片处理系统内的晶片夹盘组件，所述晶片处理系统包含由一个或多个腔室壁界定的工艺腔室，所述晶片夹盘组件包含：
吸盘，所述吸盘包含：
电绝缘材料，所述电绝缘材料界定所述吸盘的顶表面；
加热器元件，所述加热器元件嵌入在所述电绝缘材料内；
多个电极，所述多个电极嵌入在所述电绝缘材料内并设置在所述加热器元件与所述顶表面之间；以及
导电板，所述导电板设置为邻近于所述电绝缘材料；
轴，所述轴包含：
导电轴外壳，所述导电轴外壳与所述导电板电耦合；以及
多个连接器，所述多个连接器包含用于所述加热器元件的多个电连接器以及用于所述电极的多个电连接器；以及
基底，所述基底包含：
导电基底外壳，所述导电基底外壳与所述轴外壳电耦合，以及
电绝缘端子块，所述电绝缘端子块设置在所述基底外壳内，所述多个连接器通过所述端子块，
其中所述导电板与所述电绝缘材料分开0.5毫米至1.5毫米之间的间隙，并且其中净化气体被提供在所述间隙内，所述净化气体是氦和氢中的一者，其中所述净化气体相对于所述工艺腔室在所述间隙内提供正压力。
2.如权利要求1所述的晶片夹盘组件，所述端子块包含聚醚醚酮。
3.如权利要求1所述的晶片夹盘组件，所述连接器进一步包含用于热电偶或电阻温度检测器的一个或多个连接器。
4.如权利要求1所述的晶片夹盘组件，所述连接器进一步包含一个或多个流体导管，所述一个或多个流体导管经配置以提供热传递气体，所述顶表面界定多个通道，所述多个通道供所述热传递气体在所述顶表面与晶片的底表面之间散布。
5.如权利要求1所述的晶片夹盘组件，用于所述多个电极的电连接器中的每一者包括内导体、绕所述内导体的绝缘层、绕所述绝缘层的接地管以及绕所述接地管的陶瓷管。
6.如权利要求1所述的晶片夹盘组件，其中所述晶片处理系统还包含：
一个或多个功率供应器；
其中所述晶片夹盘组件经设置使得至少所述吸盘在所述工艺腔室内；并且
所述一个或多个功率供应器与所述多个电极和所述一个或多个腔室壁中的至少一者耦接，以便：
在所述电极与所述一个或多个腔室壁中的至少一者之间提供RF电压；以及
跨所述电极提供DC电压差分，用于将晶片静电地夹持至所述顶表面。
7.如权利要求6所述的晶片夹盘组件，
进一步包含DC探针，所述DC探针延伸穿过所述吸盘的所述顶表面，
所述连接器进一步包含用于所述DC探针的连接器，并且其中所述一个或多个功率供应器中的一功率供应器响应于来自所述DC探针的信号来调整在所述电极中的至少一者与所述一个或多个腔室壁中的至少一者之间的DC偏移。
8.如权利要求1所述的晶片夹盘组件，其中所述导电基底外壳界定用于冷却流体的一个或多个通道，并且其中所述导电轴外壳包含至少1.5mm厚的金属，用于从所述导电板、通过所述轴外壳将热移除至所述基底外壳。
9.一种等离子体处理的方法，包含以下步骤：
将工件装载至夹盘上，所述夹盘具有绝缘顶部；
提供跨所述绝缘顶部内的两个空间分隔的电极的DC电压差分，以将所述工件夹持至所述夹盘；
通过使电流通过嵌入在所述夹盘中的多个加热器元件来加热所述夹盘和所述工件；
在环绕所述夹盘的工艺腔室中提供多种工艺气体；
在所述夹盘下方的导电板与所述工艺腔室的一个或多个壁之间提供RF电压，以从所述工艺气体点燃等离子体；以及
使净化气体流动通过所述导电板与所述绝缘顶部之间的间隙，其中所述净化气体相对于工艺腔室在所述间隙内提供正压力，且其中所述间隙为0.5毫米至1.5毫米。
10.如权利要求9所述的等离子体处理的方法，进一步包含以下步骤：使热传递气体流动通过所述绝缘顶部而至由所述绝缘顶部界定的多个通道中，其中所述通道允许所述热传递气体在所述绝缘顶部与所述工件之间散布。
11.如权利要求9所述的等离子体处理的方法，其中加热所述夹盘的步骤包含以下步骤：将所述绝缘顶部加热至400℃或更高的温度。
12.如权利要求9所述的等离子体处理的方法，进一步包含以下步骤：响应于来自DC探针的信号而调整在所述电极中的至少一者与所述工艺腔室的所述一个或多个壁中的至少一者之间的DC偏移，所述DC探针延伸穿过所述绝缘顶部。
13.如权利要求9所述的等离子体处理的方法，进一步包含以下步骤：使冷却流体流动通过基底，所述基底与轴的轴外壳机械地耦接，所述轴支撑所述夹盘，所述轴与所述导电板机械地耦接，使得所述冷却流体冷却所述基底、所述轴外壳和所述导电板。
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