TWI700776B - 用於電漿處理系統的高溫夾盤 - Google Patents

用於電漿處理系統的高溫夾盤 Download PDF

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TWI700776B
TWI700776B TW105101264A TW105101264A TWI700776B TW I700776 B TWI700776 B TW I700776B TW 105101264 A TW105101264 A TW 105101264A TW 105101264 A TW105101264 A TW 105101264A TW I700776 B TWI700776 B TW I700776B
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wafer
chuck
top surface
chuck assembly
electrodes
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崔恩托恩Ｑ
馬立克蘇坦
路柏曼斯基迪米奇
羅伊珊胡Ｎ
小林悟
曹台昇
朴書南
凡卡塔拉曼尙卡爾
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美商應用材料股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

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Abstract

一種晶圓夾盤組件包括吸盤、軸和基底。絕緣材料界定吸盤的頂表面；加熱器元件係鑲嵌於絕緣材料內；及導電板位於絕緣材料之下。軸包括與板耦接的外殼；及用於加熱器元件和電極的電連接器。導電基底外殼與軸外殼耦接；且連接器通過在基底外殼內的端子塊。一種電漿處理的方法，包括以下步驟：將工件負載至具有絕緣頂表面的夾盤上；提供跨越在頂表面內之兩個電極的DC電壓差；藉由將電流通過加熱器元件而加熱夾盤；提供在腔室中環繞夾盤的製程流體；及提供在夾盤之下的導電板和腔室之一或多個壁之間的RF電壓。

Description

用於電漿處理系統的高溫夾盤
本揭露書廣泛地應用於電漿處理設備之領域。更具體地，揭露用於在工件上提供空間上均勻的電漿處理之系統和方法。
積體電路和其他半導體產品係通常製造在稱為「晶圓」之基板的表面上。有時，處理係在載體中保持的晶圓群上執行，而其他時候處理和測試係在一個晶圓上一次執行。當單一晶圓處理或測試被執行時，晶圓可被定位在晶圓夾盤上。其它工件也可以在類似的夾盤上被處理。
在一實施例中，一種晶圓夾盤組件包括吸盤、軸和基底。吸盤包括：電絕緣的材料，界定吸盤的頂表面；加熱器元件，鑲嵌於電絕緣材料內；及導電板，設置鄰近於電絕緣材料。軸包括：導電軸外殼，與板電耦合；及複數個連接器，包括用於加熱器元件的電連接器和用於電極的電連接器。基底包括：導電基底外殼，與軸外殼電耦合，及電絕緣端子塊，設置在基底外殼內，複數個連接器通過端子塊。
在一實施例中，一種電漿處理的方法，包括以下步驟：將工件負載至具有電絕緣頂表面的夾盤上；提供跨越在電絕緣頂表面內之兩個空間分隔的電極的DC電壓差，以將工件夾持至夾盤；及藉由將電流通過鑲嵌在夾盤中之加熱器元件而加熱夾盤和工件。方法進一步包含以下步驟：在環繞夾盤之腔室中提供製程流體；及提供在夾盤之下的導電板和腔室之一或多個壁之間的RF電壓，以從製程氣體點燃電漿。
10:製程流體
10(1):第一輸入氣體流
10(2):第二輸入氣體流
10(3):輸入氣體流
20:外部功率
30:真空
40:數據連結
50:晶圓
50(1):晶圓
50(2):晶圓
50(3):晶圓
100:系統
110:外殼
115:晶圓介面
135:控制器
145:使用者介面
150:功率供應器
150(1):功率供應器
150(2):功率供應器
151:連接
160:處理位置
170:夾盤
175:吸盤
180:軸
185:基底
205:絕緣頂部
207:通道
208:通道
210:電極
210(1):電極
210(2):電極
215:加熱器元件
217:間隙
220:板
222:軸外殼
225:絕緣襯墊
230:連接器
230(1):端子/連接器
230(2):端子/連接器
230(3):端子
230(4):端子
230(5):端子
230(6):端子
230(7):端子
230(8):導線
270:基底外殼
275:端子塊
280:通道
285(1):淨化氣體源
285(2):背側氣體源
300:處理系統
305:製程腔室
310:遠端電漿源
320:擴散器
325:擴散器
330:空間
335:第二電漿
340:擴散器
350:擴散器
355:電漿
360:氣體通道
370:DC偏壓
380:DC偏壓
390:RF源
395:DC探針
398:高阻抗電路
400(1):膜
400(3):殘餘材料
400(4):膜
400(5):
410:溝槽
420:光阻
第1圖概要地顯示根據一實施例之晶圓處理系統的主要元件。
第2圖是顯示於第1圖中之晶圓夾盤的概要圖，顯示第1圖之根據一實施例之示例性的組成部分。
第3圖是電漿晶圓處理系統的概要圖，包括晶圓夾盤，顯示根據一實施例之示例性的組成部分。
第4圖是第3圖的電漿晶圓處理系統之一部分的概要圖，包括晶圓夾盤和晶圓夾盤中之擴散器的部分，且顯示連接至晶圓夾盤的示例性功率供應器連接。
第5圖顯示根據一實施例之在處理中之晶圓的部分。
第6圖顯示當第5圖之晶圓部分被曝露於不引導離子之電漿時的假設結果。
第7圖顯示根據一實施例當第5圖之晶圓被曝露於引導離子之電漿時的結果。
本揭露書可藉由參照以下與描繪於下之圖式結合的實施方式而理解，其中類似的元件符號遍佈於一些圖式而使用，以指代類似的部件。應注意為了說明清楚之目的，在圖式中的一些元件可不按比例而繪製。一個項目的特定例子可藉由在括號中之符號的使用而指代(如，連接器230(1)、230(2)等)，而沒有括號的符號指代任何此種項目(如，連接器)。在顯示有一個項目的多個例子之情況中，為了說明的清楚起見，可能只有一些例子被標記。
於此的實施例提供用於晶圓處理系統之新的和有用的功能。多年來，半導體晶圓的尺寸已增加，同時特徵的尺寸已顯著地降低，使得具有更強大的功能的更多積體電路可從所處理的每一晶圓獲得。通常的晶圓直徑從1970年代的約2或3英寸增加至2010年代的12英寸或更高。在相同的時間範圍內，商用的積體電路之通常的最小特徵尺寸從約5微米減小到約0.015微米。處理較小的特徵同時晶圓增大需要對處理均勻性的顯著改善。因為化學反應速率通常係溫度敏感的，在處理期間遍佈晶圓之點對點的溫度控制變得更重要。例如，在某些類型的處理中，在晶圓內攝氏幾度之點對點的溫度差在過去可能是可接受的，但現在這種差異可能需要被保持在大約一度或更小。在積體電路和其他裝置的製造中所使用的某些材料也可能在大腐蝕性的電漿環境中需要 非常高溫的處理。除了晶圓外之其它工件的電漿處理也可能受益於改良的處理均勻性，且被視為在本揭露書的範圍內。因此，於此作為「晶圓夾盤」以保持「晶圓」的夾盤之特性應被理解為用於保持任何類型的工件之夾盤的等效元件，且「晶圓處理系統」應被理解為處理系統的類似等效元件。
第1圖概要地顯示晶圓處理系統100的主要元件。系統100被描繪為單一晶圓，半導體晶圓處理系統，但對於本領域之技術者將顯而易見於此的技術和原理係適用於任何類型的電漿處理系統(如，處理其他類型的工件，不一定是半導體或晶圓的系統)。還應理解第1圖只概要地顯示系統100經選擇的主要元件；故實際的處理系統與系統100相比將看起來不同，並可能包含其他元件。
晶圓處理系統100係藉由一或多個設施而服務，諸如(多個)製程流體10、外部功率20和真空30。晶圓處理系統100包括外殼110和從外部來源接收晶圓50並將晶圓50定位於處理位置160內之晶圓介面115。晶圓處理系統100還可包括使用者介面145，及控制器135，控制器135通常包括微處理器、記憶體及類似者；可從以採取從使用者介面145及/或其它來源接受輸入；及用透過晶圓處理系統100的硬體元件而提供基於電腦的控制。控制器135可透過一或多個數據連結40而與外部網絡及/或電腦接合，一或多個數據連結40可為實體的(電線或光纖連接器)或無線的連接。晶圓處理系統100還可包括一或多個內部功率供應器150，一或多個內部功率供應器150變壓或調節由外部功率20所供應的功率，以藉由系統的硬體元件而使用。
處理位置160接收各晶圓50到晶圓夾盤170上，在實施例中，晶圓夾盤170包括三個部分：吸盤175、支撐吸盤175的軸180及支撐軸180的基底185。晶圓50被實際地定位在吸盤175上，且在實施例藉由吸盤175而被加熱、冷卻及/或機械地保持。晶圓夾盤170也經配置以耦合射頻(RF)及/或直流(DC)電壓至晶圓50，以將晶圓50靜電夾持到吸盤175，用以在處理位置160內產生電漿及/或用以將反應離子從電漿引導到晶圓50。處理位置160因此將晶圓50曝露於「電漿產物」，「電漿產物」於此界定為電漿之一部分，或一度為電漿之一部分的任何材料。電漿產物可包括曾為電漿之一部分但未被轉化成離子、自由基等之任何或所有的離子、自由基、來源氣體的分子片段、其它活性物種及/或來源氣體的原子或分子。在任何時間尚未形成電漿之一部分的氣體於此被界定為「未活化氣體」。
在實施例中，吸盤175及/或軸180也經配置以操作晶圓50，用以存取晶圓處理工具。例如，在實施例中，軸180可升高吸盤175用以將晶圓50接收在吸盤175上，並隨後降下吸盤175到另一高度以處理，或相反。在這些或其它實施例中，吸盤175及/或軸180可包 括相對於吸盤175的頂表面升高或降低晶圓50的致動器，諸如可從吸盤175延伸或縮回吸盤175內的舉升銷，使得晶圓工具可被插入晶圓50和頂表面之間。軸180還可幫助與吸盤175的電性及/或流體連接。基底185將軸180機械地錨定在外殼110內，並且在實施例中，提供用於電性設施及/或流體到軸180之介面。基底185、軸180和吸盤175的部分，或它們的任何組合可整體地彼此形成，或可由組成部分部分地或完全地組裝，如以下進一步所描述的。
第2圖是晶圓夾盤170的概要圖，顯示晶圓夾盤170之示例性的組成部分。為了說明的清楚起見，第2圖未按比例繪製，晶圓夾盤170的一些部件在尺寸上被放大或縮小；不是每一部件的每個實例被標記；且不是在部件之間的所有內部連接被顯示。如按照第1圖，晶圓夾盤170的區域被識別為吸盤175、軸180和基底185，雖然晶圓夾盤170的某些部件可能重疊這些區域的兩或更多個。吸盤175包括絕緣頂部205，電極210和加熱器元件215係鑲嵌於絕緣頂部205中。頂部205可由陶瓷或其它電絕緣材料所形成的；例如，在實施例中，頂部205係由氮化鋁或氧化鋁所形成。電極210和加熱器元件215可由能承受高溫的導電及/或電阻材料所形成，(例如)諸如氧化鎢。在頂部205內之可選擇的通道207帶來與晶圓50的背側接觸之熱傳送氣體(諸如氦氣)，以改善頂部205和晶圓50之間的熱傳送。經改良的 熱傳送可對晶圓是不完全平坦的，且因此不與頂部205的頂表面均勻接觸之例子有幫助，及/或改善在晶圓上點對點的熱均勻性，從幾度之範圍到一度或更小之範圍。可選擇的通道208與通道207互連，且彼此位於的頂部205的頂表面內，使得熱傳送氣體可在晶圓50的底表面和頂部205之間散佈，直到氣體通過晶圓50的外邊緣。
可由金屬(例如，鋁或它們的合金)形成的導電板220係設置在頂部205之下並靠近頂部205。在實施例中，頂部205和板220係藉由間隙217而分隔，以允許遍佈於寬的溫度範圍之不同的兩個熱膨脹(如，從當夾盤170未使用時的室溫直到用於特定製程的約450C)。間隙217不必要係連續的，亦即，頂部205及/或板220可形成用於在頂部205和板220之間的機械支撐之脊或通道，其中即使這樣的脊或通道係存在的，間隙被視為存在。間隙217係因此曝露於在頂部205和板220之外邊緣處的製程氣體及/或電漿產物。惰性氣體(諸如氮氣或氦氣)或氫氣可被提供作為用於間隙217之淨化氣體、提供在間隙217內相對於周圍的製程腔室之正壓力，以使氣體及/或電漿產物遠離頂部205、板220的內表面和軸180內的相應表面。在實施例中，間隙217以約0.5至1.5毫米而分隔頂部205和板220。
在軸180中，導電軸外殼222係在頂部205之下並形成用於軸180之外殼222。軸外殼222也可以由(例如)鋁所製成；板220和軸外殼222係電耦合的且 可以一體地形成，如第2圖中所示，或藉由緊固或接合組成部分而組裝。軸外殼222容納可選擇的絕緣襯墊225，例如由陶瓷材料(諸如AlN或Al2O3)所製成，絕緣襯墊225幫助將內部部件免於短路或電弧至軸外殼222。絕緣襯墊225可(可選擇地)以惰性氣體(諸如氦氣或氮氣)沖刷，以移除熱量，或以稀釋和移除當晶圓被傳送進出夾盤170時可能進入夾盤表面的製程氣體。
軸180還容納在設備之功率供應器和其他設施之間的多個連接器，和吸盤175的特徵結構，夾盤170係位於設備中。顯示於第2圖中之示例性的連接器包括射頻/直流(RF/DC)端子230(1)、230(2)；直流(DC)探測中心抽頭端子230(3)；內區域加熱器端子230(4)、230(5)；外區域加熱器端子230(6)、230(7)；及熱電偶(TC)或電阻溫度偵測器(RTD)導線230(8)(如，兩元件的導線，概要地顯示為第2圖中之單一連接器)。在實施例中，其他的連接器是可能的。連接器可以為單一的或絞合的導線、棒、同軸的或其它連接器，且可為絕緣的或非絕緣的。在實施例中，同軸連接器可包括內導體、繞內導體的絕緣層、繞絕緣層的接地管及繞接地管的陶瓷管。TC或RTD可以任何數量來實施，且可能可選擇地經構成為對於溫度變化敏感的，溫度變化係由各個加熱器區域的操作、藉由電漿或電漿產物加熱、由與流動氣體或電漿產物交互作用所導致的加熱或冷卻，或其他原因所引起。在實施例中， 夾盤170的特徵可決定溫度是遍佈夾盤170之給定結構而均勻的，使得單一TC或RTD準確地呈現夾盤170的溫度。在其他實施例中，多個TC或RTD可被用以監測遍佈夾盤170之溫度，提供可被用於自動及/或手動調整加熱器區域或夾盤170位於其中之電漿處理系統的其他態樣的操作之資訊，以促進溫度的均勻性。
連接器還可為流體導管。此外，或者除了將連接器構造為流體導管之外，軸外殼222、絕緣襯墊225及/或在軸外殼222和絕緣襯墊225之間的空間可被配置有流體通道。例如，第2圖顯示如上討論之在軸外殼222和絕緣襯墊225之間的間隙217(討論於上)，連接到基底185之淨化氣體源285(1)。此外，背側氣體源285(2)供應氦或其他惰性氣體至通道207，以改良遍佈晶圓50的熱控制。
在第2圖中之連接器的數量和配置僅為概要的；連接器可能(且通常將)為了不同的目的(諸如最小化軸180的尺寸、最大化相鄰連接器之間的空間、改善溫度均勻性及/或熱散失，及其他原因)而被不同地配置。
夾盤170的基底185包括導電基底外殼270，導電基底外殼270可由金屬所製成(例如，鋁)且可與軸外殼222一體地形成，或藉由緊固件、焊接或類似物組裝至軸外殼222。在實施例中，基底外殼270包括連接器通過的電絕緣端子塊275。端子塊275用以對準連接器，使得它們各自的遠端被佈置為與吸盤175 內之相應的插座匹配。端子塊275可由絕緣體(諸如聚醚醚酮(PEEK)或陶瓷，這兩者於高溫時都提供良好的電阻和穩定性)所形成。
基底外殼270可包括通道(諸如如圖所示在基底外殼270中用於加熱/冷卻流體之通道280)。通過通道280之加熱/冷卻流體可為氣體或液體任一者。在實施例中，通過通道280之加熱/冷卻流體是水和乙二醇或丙二醇的混合物，具有約50%的水、50%乙二醇的混合比例。在實施例中，通過通道280所提供的冷卻不只冷卻基底外殼270，且亦冷卻軸外殼222和與軸外殼222機械連接之導電板220。有利地，間隙217和在間隙217中提供的淨化氣體用以將板220與在頂部220內達到的最高溫度絕緣；此外，軸外殼222的金屬可以比僅用於機械目的所需的厚度為厚，以提供從板220下至基底外殼270之高的熱傳送，其中熱係藉由通過通道280的冷卻流體而移除。例如，在實施例中，軸外殼222可為1.5mm、2.0mm、2.5mm或更厚。
基底185可被固定於晶圓處理設備之相關聯的部分內，或可使用滑動件、鉸鍊或其他裝置而被可移動地安裝，以定位吸盤175，以當需要時，傳送或接收晶圓或其它工件及/或對準晶圓或工件。
第3圖是包括晶圓夾盤170之電漿晶圓處理系統300的概要圖，顯示電漿晶圓處理系統300之示例性的組成部分。為了說明的清楚起見，第3圖未按比例繪 製，電漿晶圓處理系統300的一些部件在尺寸上被放大或縮小；不是每一部件的每個實例被標記；且不是在部件之間的所有內部連接被顯示。電漿晶圓處理系統300是第1圖的晶圓處理系統100的一個例子。電漿晶圓處理系統300使用電漿產物及/或未活化氣體在製程腔室305內處理晶圓50；第3圖以空心箭頭顯示電漿產物且以實心箭頭顯示未活化氣體的流動。可選擇的遠程電漿源310從第一輸入氣體流10(1)產生第一電漿(未示出)並可選擇地以第二輸入氣體流10(2)混合所產生的電漿產物，將電漿產物朝擴散器320傳送。電漿產物可通過其它的、可選擇的擴散器320、325和340，擴散器320、325和340至少用以在電漿產物被引入至製程腔室305之前，均勻地分配電漿產物。在所示的構造中，第一功率150(1)提供RF能量遍佈於擴散器325和340之間的空間330，在空間330中形成第二電漿335。來自第一和第二電漿的電漿產物可能可選擇地與進一步的輸入氣體流10(3)通過進一步的擴散器350(有時被稱為「噴淋頭」)而混合。擴散器350係構造成有大的埠和氣體通道360，埠用於通過電漿產物，氣體通道360傳送輸入氣體流10(3)通過僅面向製程腔室305之擴散器350的側面。將理解任何或全部的遠端電漿源310和擴散器320、325、340和350的使用是可選擇的。
第二功率供應器150(2)經可控制地配置以通過連接器230(1)和230(2)而提供RF能量及/或DC偏壓至夾盤170內之電極210(1)和210(2)，如圖概要地所示，並提供處理系統300的其他部分。RF能量及/或DC偏壓的具體連接可變化，如下面進一步討論的。功率供應器150(2)可提供(例如)DC偏壓遍佈於電極210(1)和210(2)，且可提供RF能量及/或DC偏壓於電極210(1)和210(2)和處理系統300的其它部件之間，如由功率供應器150(2)和擴散器350之間的連接151所示。提供RF能量和DC偏壓兩者對於將晶圓50(或任何其它工件)靜電夾持至夾盤170，用以在製程腔室305內產生電漿和用以引導電漿的離子至晶圓50上的一些處理部位兩者是特別有用的，如以下進一步討論的。通常的DC夾持電壓為傳送到相對電極210(1)和210(2)的±200V，而通常的RF電壓是跨製程腔室305的±75V(施加到電漿的RF功率為約100W-500W)。處理系統300的一部分係更詳細地顯示於第4圖中。
第4圖是電漿晶圓處理系統300的概要圖，電漿晶圓處理系統300包括晶圓夾盤170和擴散器350的一部分，並顯示與晶圓夾盤170和擴散器350之示例性的功率供應器連接。為了說明的清楚起見，第4圖未按比例繪製，電漿晶圓處理系統300的一些部件在尺寸上被放大或縮小；不是每一部件的每個實例被標記；且不是 在部件之間的所有內部連接被顯示。第4圖顯示藉由擴散器350和夾盤170的個別部分所界定之製程腔室305的一部分、晶圓50、在製程腔室305內之電漿355及功率供應器150(2)的示例性細節。電漿355係從氣體流10(1)、10(2)及/或10(3)所產生，無論是以他們的原始、未活化的形式或是作為在遠端電漿源310中或在空間330內形成的電漿產物(第3圖)。用於形成電漿355的RF能量係藉由功率供應器150(2)內之RF源390所供應。在第4圖中所示的構造中，功率供應器150(2)亦提供了跨電極210(1)和210(2)的DC偏壓370，DC偏壓370用以將晶圓50靜電夾持到晶圓夾盤170。DC電場係以虛線箭頭顯示於第4圖中。在第4圖中所示的實施例還包括在電極210和擴散器350之間的可選擇的DC偏壓380。DC偏壓380可引導在電漿355中形成的離子(或存在於來自其他位置的電漿產物中，如以上所討論的)朝向晶圓50，以影響於晶圓50上之電漿處理的方向性(參見第5-7圖)。
第4圖還顯示中心抽頭DC探針395，DC探針395可被監測，以確定晶圓50的實際背側DC電壓。對DC探針395所測量的電壓可被測量和被用以控制DC偏壓380，以控制和優化對晶圓50的製程結果。例如，當進行電漿處理時，電漿產物內的反應物種通常為帶負電的離子，當帶負電的離子反應時，帶負電的離子可傳送負電荷到晶圓50。這導致晶圓50的充電；在處理期間 由晶圓50所獲得之通常DC電壓可為大約-50V。中心抽頭DC探針395允許此電壓被感測，且因此藉由調節DC偏壓380而被相應第補償。因此，DC探針395與高阻抗電路398耦接，高阻抗電路398測量DC探針395上之電壓並提供用於功率供應器150(2)之合適的資訊以調節DC偏壓380。
與可能使用不與高溫相容的材料之先前的系統相比(諸如某些聚合物或塑膠、橡膠和類似物)，晶圓夾盤170之所有部件和與晶圓夾盤170整合之所有部件係與非常高溫的操作相容的。曝露於電漿的部件也能夠存活在很嚴苛的電漿環境中(諸如當NH3或NF3被分別被使用作為來源氣體時所產生的H*或F*自由基和其他者)。O2通常也加入作為來源氣體(以供應電子、促進電漿點燃)，產生進一步的離子物種和自由基。先前的系統經常使用不銹鋼夾盤，但不銹鋼通常在此環境中腐蝕，導致顆粒污染。在處理系統300內的晶圓夾盤170之佈置是獨特的，其中它允許處理在均勻的、高溫環境發生，同時還提供用於熱傳送之堅固的靜電夾持，且能夠引導反應性離子物種朝向工件，而不腐蝕或熱分解。例如，藉由對部件的適當大小設定(例如，軸外殼222的厚度和在間隙217內之淨化氣體的流率)，於此的實施例能夠高達500C操作，幫助電漿蝕刻晶圓50上的一些金屬及/或陶瓷材料。
第5、6和7圖顯示以於此所述的晶圓夾盤和晶圓處理系統而可獲得的示例性的處理結果。第5圖顯示在進行中之晶圓50(1)的一部分。晶圓50(1)已被處理以在晶圓50(1)中形成深的溝槽410，且膜400(1)已被沉積在晶圓50(1)的頂表面上和在溝槽410中。後續的處理是為了從晶圓50(1)的一些區域移除膜400(1)，但留下膜400(1)在其他區域上；光阻420因此被提供在膜400(1)欲被保持的區域中。
第6圖顯示當晶圓50(1)被曝露於不引導離子之電漿時之假設結果，例如，藉由將晶圓50(1)曝露於反應性物種藉由擴散而被簡單地隨機定向之電漿。易於被曝露於反應性物種的膜400(1)之表面被蝕刻，而晶圓50(1)不與反應性物種反應。此製程留下成果的晶圓50(2)，晶圓50(2)具有藉由光阻420所保護的膜400(4)，但亦留下殘餘材料400(3)在溝槽410內。此發生係因為反應性物種簡單地行進，直到它們遇到一些東西，然後於他們所降落處反應。很少反應性物種碰巧以用以深深地穿入溝槽410中所需的正確方向行進。使用隨機定向之反應性物種以夠長的時間蝕刻晶圓50(1)以移除殘餘材料400(3)是有可能或不太可能的，且通常是不切實際的。
第7圖顯示出當晶圓50(1)曝露於藉由提供電場引導離子之電漿的結果，電場導引離子朝向晶圓50(1)；亦即，如第3和4圖中所示，使用晶圓夾盤170。 在第4圖中所指示的電場導引帶負電的反應性物種在第7圖中的定向中朝下，使得較多的反應性物種的到達溝槽410內之較低區域的膜400(1)。成果的晶圓50(3)僅留下在原始膜400(1)由光阻420所保護之位置處中的膜400(4)，如圖所示。
在於此所述的晶圓夾盤中使用之設計和的材料的種類不是那些通常被認為適合晶圓夾盤的。在過去，晶圓夾盤往往是相當簡單的事情，從單純的金屬板坯到提供真空或靜電夾持、可調整的晶圓對準/定位和類似者之稍微更複雜的系統。保留所有的這些功能，但在高腐蝕性的電漿環境中以非常高的溫度操作而不會降級的設計係未知的。
已描述一些實施例，本領域的技術人員將認知各種的修改、替換的構造和等效元件可被使用而不背離本發明的精神。此外，一些已知的製程和元件未被說明，以避免不必要地模糊本發明。故，上述的實施方式不應被視為限制本發明的範圍。
當提供數值的範圍時，應理解亦具體地揭露在那個範圍之上限和下限之間的每個中間數值(除非上下文清楚地另有所指，到下限的單位的十分之一)。包含在所宣稱範圍中之任何所宣稱數值或中間數值和在那個所宣稱範圍中之任何其他所宣稱數值或中間數值之間的每個較小範圍。這些較小範圍的上限和下限可獨立地被包括或排除在該範圍內，且在上下限之任一者、兩者皆 未或兩者皆被包括在較小範圍時之每個範圍亦包括在本發明內，受到在所宣稱之範圍中任何具體排除之限制的約束。當所宣稱的範圍包括上下限之一或兩者時，亦包括排除那些所包括的上下限之任一者或兩者之範圍。
當於此和申請專利範圍中使用時，除非上下文明確地另有所指，單數形式的「一」、「一個」和「該」包括複數個對象。因此，例如，關於「一製程」係包括複數個此製程，且關於「該電極」係包括一或多個電極和對本領域技術人員已知的它們的等效元件等等。此外，當使用於此說明書中和以下的申請專利範圍中時，用詞「包含(comprise)」、「包含(comprising)」、「包括(include)」、「包括(including)」和「包括(includes)」係意欲指明所宣稱的特徵、整體、部件或或步驟的存在，但它們不排除一或多個其它特徵、整體、部件、步驟、動作或群組的存在或增加。
10‧‧‧製程流體
20‧‧‧外部功率
30‧‧‧真空
40‧‧‧數據連結
50‧‧‧晶圓
100‧‧‧系統
110‧‧‧外殼
115‧‧‧晶圓介面
135‧‧‧控制器
145‧‧‧使用者介面
150‧‧‧功率供應器
160‧‧‧處理位置
170‧‧‧夾盤
175‧‧‧吸盤
180‧‧‧軸
185‧‧‧基底

Claims (19)

  1. 一種晶圓夾盤組件，包含：一吸盤，包含：一電絕緣的材料，界定該吸盤的一頂表面；一加熱器元件，鑲嵌於該電絕緣材料內；複數個電極，鑲嵌於該電絕緣材料內並設置於該加熱器元件和該頂表面之間；及一導電板，設置鄰近於該電絕緣材料；一軸，包含：一導電軸外殼，與該板電耦合；及複數個連接器，包含用於該加熱器元件的多個電連接器和用於該等電極的多個電連接器，用於該複數個電極之該等電連接器之每一者包括：一內導體；繞該內導體之一絕緣層；繞該絕緣層之一接地管；及繞該接地管之一陶瓷管；及一基底，包含：一導電基底外殼，與該軸外殼電耦合，及一電絕緣端子塊，設置在該基底外殼內，該複數個連接器通過該端子塊。
  2. 如請求項1所述之晶圓夾盤組件，該端子塊 包含聚醚醚酮。
  3. 如請求項1所述之晶圓夾盤組件，該等連接器進一步包含用於一熱電偶或一電阻溫度偵測器之一或多個連接器。
  4. 如請求項1所述之晶圓夾盤組件，該等連接器進一步包含一或多個流體導管。
  5. 如請求項4所述之晶圓夾盤組件，該一或多個流體導管之至少一者經配置以提供一熱傳送氣體，該頂表面界定用於該熱傳送氣體的多個通道，以在該頂表面和一晶圓之一底表面之間散佈。
  6. 如請求項1所述之晶圓夾盤組件，進一步包含一晶圓處理系統，該晶圓夾盤組件被設置於該晶圓處理系統中。
  7. 如請求項6所述之晶圓夾盤組件，其中該晶圓處理系統包含：一製程腔室，藉由一或多個腔室壁所界定，及一或多個功率供應器；其中該晶圓夾盤組件經設置使得至少該吸盤係位於該製程腔室內；及該一或多個功率供應器與該複數個電極和該一或多個腔室壁之至少一者耦接，以提供：一RF電壓，在該等電極和該一或多個腔室壁之 至少一者之間；及一DC電壓差，遍佈該等電極，用以靜電地夾持一晶圓至該頂表面。
  8. 如請求項7所述之晶圓夾盤組件，進一步包含一DC探針，該DC探針延伸穿過該吸盤之該頂表面，該等連接器進一步包含用於該DC探針之一連接器。
  9. 如請求項8所述之晶圓夾盤組件，其中該一或多個功率供應器之一功率供應器調整在該等電極之至少一者和該一或多個腔室壁之至少一者之間的一DC偏差，以回應於來自該DC探針之一訊號。
  10. 如請求項6所述之晶圓夾盤組件，其中該導電板藉由0.5至1.5毫米之一間隙而與該電絕緣材料分隔，且其中該晶圓處理系統經配置以提供一淨化氣體於該間隙內。
  11. 如請求項10所述之晶圓夾盤組件，其中該淨化氣體係氦氣或氫氣之一者，且該淨化氣體相對於一周圍製程腔室提供一正壓力於該間隙內。
  12. 如請求項1所述之晶圓夾盤組件，其中該導電基底外殼界定用於一冷卻流體之一或多個通道。
  13. 如請求項12所述之晶圓夾盤組件，該導電軸外殼包含至少1.5mm厚的金屬，用以從該導電 板，通過該軸外殼將熱量移除至該基底外殼。
  14. 一種電漿處理的方法，包含以下步驟：將一工件負載至具有一電絕緣頂表面的一夾盤上；提供跨越在該電絕緣頂表面內之兩個空間分隔的電極的一DC電壓差，以將該工件夾持至該夾盤；藉由將電流通過鑲嵌在該夾盤中之多個加熱器元件而加熱該夾盤和該工件；在環繞該夾盤之一腔室中提供多個製程氣體；及提供在該夾盤之下的一導電板和該腔室之一或多個壁之間的一RF電壓，以從該等製程氣體點燃一電漿。
  15. 如請求項14所述之電漿處理方法，進一步包含以下步驟：將一熱傳送氣體流動通過該頂表面至由該頂表面所界定的多個通道，其中該等通道允許該熱傳送氣體在該頂表面和該工件之間散佈。
  16. 如請求項14所述之電漿處理方法，其中加熱該夾盤之步驟包含以下步驟：將該頂表面加熱至400C或更高的一溫度。
  17. 如請求項14所述之電漿處理方法，進一步包含以下步驟：調整在該等電極之至少一者和該腔室之該一或多個壁之至少一者之間的一DC偏差，以 回應於來自一DC探針之一訊號，該DC探針延伸穿過該頂表面。
  18. 如請求項14所述之電漿處理方法，進一步包含以下步驟：將一淨化氣體流動通過在該導電板和該頂表面之間的一間隙。
  19. 如請求項18所述之電漿處理方法，進一步包含以下步驟：將一冷卻流體流動通過一基底，該基底係與一軸之一軸外殼機械地耦接，該軸支撐該夾盤，該軸係與該導電板機械地耦接，使得該冷卻流體冷卻該基底、該軸外殼和該導電板。
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