CN114245936A - 半导体制造装置用构件 - Google Patents

半导体制造装置用构件 Download PDF

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CN114245936A
CN114245936A CN202080056190.2A CN202080056190A CN114245936A CN 114245936 A CN114245936 A CN 114245936A CN 202080056190 A CN202080056190 A CN 202080056190A CN 114245936 A CN114245936 A CN 114245936A
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rods
rod
electrode
ceramic
manufacturing apparatus
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田村隆二
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NGK Insulators Ltd
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Abstract

本发明的半导体制造装置用构件是在表面为晶片载置面的陶瓷板的背面设置有中空陶瓷轴的结构。该半导体制造装置用构件具备埋设于陶瓷板的RF电极、配置于陶瓷轴的中空内部的外侧的RF连接器、以及设置于RF连接器与RF电极之间的RF连杆构件。RF连杆构件具有由多个RF杆构成的分支部，分支部延续至陶瓷轴的外侧。

Description

半导体制造装置用构件
技术领域
本发明涉及半导体制造装置用构件。
背景技术
在蚀刻装置、CVD装置等半导体制造装置中，有时使用在表面为晶片载置面的圆盘状陶瓷板的背面连接有圆筒状陶瓷轴的结构的半导体制造装置用构件。作为这样的半导体制造装置用构件，已知有在陶瓷板中埋设高频电极(RF电极)，利用该RF电极产生等离子体的构件。例如，在专利文献1的半导体制造装置用构件中，在RF电极上连接有多个RF杆，多个RF杆从配置在陶瓷轴的中空内部的1个RF连接器分支。在专利文献1中，由于具备多个RF杆而并非1根RF杆，因此能够减小流过每1根RF杆的电流，与此相伴，每1根RF杆的发热量也减少。因此，难以在陶瓷板上产生热点。
现有技术文献
专利文献
专利文献1：日本特开2016-184642号公报
发明内容
发明所要解决的课题
然而，若如专利文献1那样在陶瓷轴的中空内部配置RF连接器，则有时因RF连接器发热而导致陶瓷轴的中空内部的温度变高。在该情况下，即使RF杆的发热量小，RF杆的温度也容易上升，有可能在陶瓷板产生热点。
本发明是为了解决这样的课题而完成的，其主要目的在于，在具备多个RF杆的半导体制造装置用构件中，确实地防止在陶瓷板上产生热点。
用于解决课题的方案
本发明的半导体制造装置用构件是在表面为晶片载置面的陶瓷板的背面设置有中空陶瓷轴的结构，具备：
RF电极，其埋设于所述陶瓷板；
RF连接器，其配置在所述陶瓷轴的中空内部的外侧；以及
RF连杆构件，其设置在所述RF连接器与所述RF电极之间，
所述RF连杆构件具有由多个RF杆构成的分支部，所述分支部延续至所述陶瓷轴的外侧。
在该半导体制造装置用构件中，RF连杆构件具有由多个RF杆构成的分支部。由此，RF连杆构件的电流流路的表面积增加，因此能够抑制由趋肤效应引起的电阻的增加。另外，流过每1根RF杆的电流变小，因此每1根RF杆的发热量减少。另一方面，RF连接器配置在陶瓷轴的中空内部的外侧。由此，即使RF连接器发热，陶瓷轴的中空内部的温度也不会因此变高。因此，不会导致配置于陶瓷轴的中空内部的RF杆的温度容易上升这样的状况。因此，根据本发明的半导体制造装置用构件，能够确实地防止在陶瓷板上产生热点。
在本发明的半导体制造装置用构件中，也可以是，所述多个RF杆在所述陶瓷板的背面的近前的第一汇集部汇集成1个而与所述RF电极连接。这样，在将RF连杆构件与RF电极连接时，能够减少设置于陶瓷板的孔。
在本发明的半导体制造装置用构件中，也可以是，所述多个RF杆独立地与所述RF电极连接。这样，即使多个RF杆中的1个由于某种原因而从RF电极脱离，也能够从其他RF杆向RF电极供给电力。
在本发明的半导体制造装置用构件中，RF电极也可以在陶瓷板的内部涉及高度不同的多个面而设置。这样，能够针对RF电极的高度不同的每一面改变等离子体的密度。在该情况下，多个RF杆也可以独立地连接于RF电极的各面。这样，能够确保RF杆间的距离。例如，通过增大发热的RF杆间的距离，能够防止RF杆彼此相互加热。另外，由于靠近陶瓷板的背面的RF电极和远离陶瓷板的背面的RF电极分别与RF杆连接，因此与靠近陶瓷板的背面的RF电极连接的RF杆的孔的深度变浅，陶瓷板的加工负荷变小，能够抑制破损风险。与此相对，在远离陶瓷板的背面的RF电极上连接多根RF杆的情况下，多根RF杆的孔的深度变深，陶瓷板的加工负荷变大，破损风险提高。
在本发明的半导体制造装置用构件中，也可以是，所述多个RF杆在所述RF连接器的近前的第二汇集部汇集成1个而与所述RF连接器连接。这样，在将RF连杆构件与RF连接器连接时，能够减少RF连杆构件与RF连接器的连接部位。
在本发明的半导体制造装置用构件中，将所述RF杆沿与长度方向垂直的方向切断时的截面可以是在外周部具有至少1个凹部的形状。这样，RF杆的表面积与不具有凹部的情况相比变大，因此能够进一步抑制由趋肤效应引起的电阻的增加，每1根RF杆的发热量进一步减少。
本发明的半导体制造装置用构件可以具备：电阻发热体，其埋设于所述陶瓷板；以及一对加热杆，其与所述电阻发热体连接，并穿过所述陶瓷轴的中空内部而设置至所述陶瓷轴的外侧为止，所述RF连杆构件的基端可以位于比所述加热杆的基端更靠近所述陶瓷轴的位置。这样，由于RF连杆构件的发热的部分变短，因此作为结果，发热量变少。进而，由于对RF连杆构件的基端进行的作业与对加热杆的基端进行的作业不易干扰，因此容易顺畅地进行各自的作业。另外，由于能够使RF连杆构件的长度比较短，因此能够将RF连杆构件的电阻抑制得低，能够将RF连杆构件的发热量抑制得低。
本发明的半导体制造装置用构件可以具备：电阻发热体，其埋设于所述陶瓷板；以及一对加热杆，其与所述电阻发热体连接，并穿过所述陶瓷轴的中空内部而设置至所述陶瓷轴的外侧为止，RF杆优选比加热杆粗。即，RF杆的直径优选大于加热杆的直径。这样，RF杆的表面积变大，因此流过RF杆的RF电流的电阻变低。因此，每1根RF杆的发热量进一步减少。需说明的是，在半导体制造装置用构件具备第一汇集部的情况下，优选第一汇集部的直径大于加热杆的直径。在半导体制造装置用构件具备第二汇集部的情况下，优选第二汇集部的直径大于加热杆的直径。
附图说明
[图1]陶瓷加热器10的纵截面图。
[图2]RF连杆构件140的周边部分的纵截面图。
[图3]RF连杆构件240的周边部分的纵截面图。
[图4]RF连杆构件340的周边部分的纵截面图。
[图5]RF杆42的变形例的截面图。
[图6]具备RF电极416的陶瓷加热器的纵截面图。
具体实施方式
接着，参照附图对本发明的优选实施方式在以下进行说明。图1是陶瓷加热器10的纵截面图。
需说明的是，在本说明书中，“上”、“下”并不表示绝对的位置关系，而是表示相对的位置关系。因此，根据陶瓷加热器10的朝向，“上”、“下”也会成为“下”、“上”、或“左”、“右”、或“前”、“后”。
陶瓷加热器10是半导体制造装置用构件之一。陶瓷加热器10用于支撑利用等离子体实施CVD、蚀刻等处理的晶片并进行加热，安装于未图示的半导体工艺用的腔室内部。该陶瓷加热器10具备陶瓷板12、陶瓷轴20、加热杆24、RF连接器30以及RF连杆构件40。
陶瓷板12是以AlN为主成分的圆板状的构件。该陶瓷板12具备能够载置晶片的晶片载置面12a。在陶瓷板12的与晶片载置面12a相反侧的面(背面)12b接合有陶瓷轴20。在陶瓷板12中埋设有电阻发热体14和RF电极16。电阻发热体14是将以Mo为主成分的线圈以遍及陶瓷板12的整个面并与晶片载置面12a实质上平行的方式按照一笔画的要领进行布线而成的。RF电极16是直径比陶瓷板12稍小的圆盘状的薄层电极，由以Mo为主成分的细金属线编织成网状并制成片状的网形成。该RF电极16以与晶片载置面12a实质上平行的方式埋设于陶瓷板12中的电阻发热体14与晶片载置面12a之间。将电阻发热体14、RF电极16的材质设为Mo是因为热膨胀系数与作为陶瓷板12的主成分的AlN接近，在陶瓷板12的制造时难以产生裂纹。关于电阻发热体14、RF电极16，即使是Mo以外的材质，只要是热膨胀系数与AlN接近的导电性材料就也能够使用。需说明的是，在陶瓷板12的背面12b中被陶瓷轴20包围的区域插入有检测陶瓷板12的温度的热电偶(未图示)。
陶瓷轴20是以AlN为主成分的圆筒状的构件，在上部开口的周围具有第一凸缘20a，在下部开口的周围具有第二凸缘20b。第一凸缘20a的端面通过固相接合法与陶瓷板12的背面12b接合。第二凸缘20b的端面固定于未图示的腔室。
加热杆24是由Mo等金属形成的截面圆形的杆。一对加热杆24中的一个加热杆24的上端与电阻发热体14的一端接合，另一个加热杆24的上端与电阻发热体14的另一端接合。一对加热杆24的下端露在陶瓷轴20的中空内部22的外侧，经由电缆26与加热器电源28连接。加热器电源28在本实施方式中是AC电源，但也可以采用DC电源。
RF连接器30配置于陶瓷轴20的中空内部22的外侧(下侧)。该RF连接器30具备插座32和RF基杆36。插座32是由Ni等导电性金属形成的大致长方体或大致圆柱形的构件。在插座32的上表面设置有用于插入RF连杆构件40的RF杆42的2个插入孔34。插入孔34保持插入的RF杆42。RF基杆36是由Ni等导电性金属形成的杆，与插座32的下表面一体化。RF基杆36经由电缆37与RF电源38连接。
RF连杆构件40具有由多个(在此为2根)RF杆42构成的分支部44。RF杆42是由Ni等导电性金属形成的截面圆形的杆。多个RF杆42在保持分支的状态下，上端穿过设置于陶瓷板12的背面12b的孔13而与RF电极16连接。另外，多个RF杆42在保持分支的状态下，下端插入RF连接器30的插入孔34。在本实施方式中，RF连杆构件40是分支部44，从RF电极16经由陶瓷轴20的中空内部22到达RF连接器30。因此，分支部44的一部分配置于陶瓷轴20的中空内部22。RF连杆构件40经由RF连接器30及电缆37与RF电源38连接。RF杆42的下端位于比加热杆24的下端更靠近陶瓷轴20的位置。在RF杆42彼此之间没有配置加热杆24。RF杆42彼此的间隔为RF杆42的直径以上。
接着，对陶瓷加热器10的使用例进行说明。在未图示的腔室内配置陶瓷加热器10，在晶片载置面12a上载置晶片。然后，经由电缆26和加热杆24对电阻发热体14施加加热器电源28的电压，由此对晶片进行加热。具体而言，根据未图示的热电偶的检测信号求出晶片的温度，控制向电阻发热体14施加的电压以使该温度成为设定温度(例如350℃或300℃)。另外，通过经由电缆37、RF连接器30以及RF连杆构件40对RF电极16施加RF电源38的交流高频电压，从而在由设置于腔室内的上方的未图示的对置水平电极和埋设于陶瓷板12的RF电极16构成的平行平板电极间产生等离子体，利用该等离子体对晶片实施CVD成膜或实施蚀刻。如果对RF电极16施加直流电压，则能够作为静电电极(ESC电极)使用。
在以上详述的陶瓷加热器10中，RF连杆构件40具有由多个RF杆42构成的分支部44。由此，RF连杆构件40的电流流路的表面积增加，因此能够抑制由趋肤效应引起的电阻的增加。另外，流过每1根RF杆的电流变小，因此每1根RF杆的发热量减少。另一方面，RF连接器30配置在陶瓷轴20的中空内部22的外侧。由此，即使RF连接器30发热，陶瓷轴20的中空内部22的温度也不会因此变高。因此，不会导致配置于陶瓷轴20的中空内部22的RF杆42的温度容易上升这样的状况。因此，根据陶瓷加热器10，能够确实地防止在陶瓷板12产生热点。另外，由于在陶瓷轴20的中空内部22的外侧配置有RF连接器30，因此能够顺畅地进行RF连杆构件40与RF连接器30的连接作业。
另外，由于多个RF杆42独立地与RF电极16连接，因此即使多个RF杆42中的1个由于某种原因而从RF电极16脱离，也能够从其他RF杆42向RF电极16供给电力。另外，由于多个RF杆42与RF电极16连接，因此不会产生由趋肤效应引起的电阻增加，能够抑制发热量。
而且，RF连杆构件40的基端(下端)位于比加热杆24的基端(下端)更靠近陶瓷轴20的位置。由此，对RF连杆构件40的基端进行的作业与对加热杆24的基端进行的作业不易干扰，因此容易顺畅地进行各个作业。另外，由于能够使RF连杆构件40的长度比较短，因此能够将RF连杆构件40的电阻抑制得低，能够将RF连杆构件40的发热量抑制得低。进而，由于加热杆24中不流过高频电流，因此没有趋肤效应，由于电阻比RF杆42低，因此即使延长，加热杆24的发热量也几乎不会增加。
此外，由于与噪声发送源的距离越远，噪声的影响越弱，因此通过在RF杆42之间不配置加热杆24，从而施加于加热杆24的电压受到施加于RF杆42的高频电压的影响而变动的可能性变少。
而且，RF杆42彼此的间隔为RF杆42的直径以上，多个RF杆42以具有充分的间隔的方式配置，因此1个RF杆42受到其他RF杆42的发热的影响的可能性小。
而且，RF杆42优选比加热杆24粗(RF杆42的直径比加热杆24的直径大)。这样，RF杆42的表面积变大，因此流过RF杆42的RF电流的电阻变低。因此，每1根RF杆的发热量进一步减少。
需说明的是，不言而喻，本发明不受上述实施方式的任何限定，只要属于本发明的技术范围，就能够以各种方式实施。
例如，也可以代替上述实施方式的RF连杆构件40而采用图2的RF连杆构件140。在图2中，对与上述的实施方式相同的构成要素标注相同的附图标记。RF连杆构件140具备由多个(在此为2根)RF杆142构成的分支部144和在陶瓷板12的背面12b的近前将多个RF杆142汇集成1个的圆柱状的汇集部145。RF杆142在保持分支的状态下，下端插入RF连接器30的插入孔34。RF杆142的上端在汇集部145汇集成1个杆而与RF电极16连接。RF连杆构件140从RF电极16经由陶瓷轴20的中空内部22到达RF连接器30。分支部144的一部分配置于陶瓷轴20的中空内部22。RF连杆构件140的下端位于比加热杆24(参照图1)的下端更靠近陶瓷轴20的位置。在图2中，由于RF连杆构件140的大部分由多个RF杆142构成，因此能够抑制发热。另外，在将RF连杆构件140与RF电极16连接时，能够减少设置于陶瓷板12的孔13。优选RF杆142、汇集部145比加热杆24粗。这样，由于RF杆142、汇集部145的表面积变大，因此流过RF杆142、汇集部145的RF电流的电阻变低，它们的发热量变小。
也可以代替上述实施方式的RF连杆构件40而采用图3的RF连杆构件240。在图3中，对与上述的实施方式相同的构成要素标注相同的附图标记。RF连杆构件240具备由多个(在此为2根)RF杆242构成的分支部244、在陶瓷板12的背面12b的近前将多个RF杆242汇集成1个的圆柱状的第一汇集部245、以及在RF连接器30的近前将多个RF杆242汇集成1个的圆柱状的第二汇集部246。RF杆242的上端在第一汇集部245汇集成1个杆而与RF电极16连接。RF杆242的下端在第二汇集部246汇集成1个杆而插入RF连接器30的插入孔34。RF连杆构件240从RF电极16经由陶瓷轴20的中空内部22到达RF连接器30。分支部244的一部分配置于陶瓷轴20的中空内部22。RF连杆构件240的下端位于比加热杆24(参照图1)的下端更靠近陶瓷轴20的位置。在图3中，在将RF连杆构件240与RF电极16连接时，能够减少设置于陶瓷板12的孔13。另外，在将RF连杆构件240与RF连接器30连接时，与上述的实施方式相比，能够减少连接部位(插入孔34)。需说明的是，也可以在RF电极16与RF连接器30之间设置多个RF连杆构件240。RF杆242、第一及第二汇集部245、246优选比加热杆24粗。这样，由于RF杆242、第一及第二汇集部245、246的表面积变大，因此流过RF杆242、第一及第二汇集部245、246的RF电流的电阻变低，它们的发热量变小。
也可以代替上述实施方式的RF连杆构件40而采用图4的RF连杆构件340。在图4中，对与上述的实施方式相同的构成要素标注相同的附图标记。RF连杆构件340具备由多个(在此为2根)RF杆342构成的分支部344和在RF连接器30的近前将多个RF杆342汇集成1个的汇集部346。RF杆342在保持分支的状态下，上端与RF电极16连接。RF杆342的下端在汇集部346汇集成1个杆而插入RF连接器30的插入孔34。RF连杆构件340从RF电极16经由陶瓷轴20的中空内部22到达RF连接器30。分支部344的一部分配置于陶瓷轴20的中空内部22。RF连杆构件340的下端位于比加热杆24(参照图1)的下端更靠近陶瓷轴20的位置。在图4中，在将RF连杆构件340与RF连接器30连接时，与上述的实施方式相比，能够减少连接部位(插入孔34)。需说明的是，也可以在RF电极16与RF连接器30之间设置多个RF连杆构件340。优选RF杆342、汇集部346比加热杆24粗。这样，RF杆342、汇集部346的表面积变大，因此流过RF杆342、汇集部346的RF电流的电阻变低，它们的发热量变小。
在上述的实施方式中，将RF杆42的截面(沿与长度方向垂直的方向切断时的截面)设为圆形，但也可以如图5所示，设为在RF杆42的截面的外周部具有至少1个(在此为5个)凹部42a的形状。具体而言，RF杆42也可以具备至少1个(在此为5个)沿着长度方向延伸的槽。这样，RF杆42的表面积与不具有凹部42a的情况相比变大，因此能够进一步抑制由趋肤效应引起的电阻的增加，每1根RF杆的发热量进一步减少。
在上述的实施方式中，将RF电极16的形状设为网，但也可以是其他形状。例如，可以是线圈状、平面状，也可以是冲孔金属。
在上述的实施方式中，作为陶瓷材料采用了AlN，但并不特别限定于此，例如也可以采用氧化铝、氮化硅、碳化硅等。在该情况下，电阻发热体14、RF电极16的材质优选使用与该陶瓷的热膨胀系数接近的材质。
在上述的实施方式中，在陶瓷板12中埋设了电阻发热体14和RF电极16，但也可以进一步埋设静电电极。这样，陶瓷加热器10也发挥作为静电卡盘的功能。
在上述的实施方式中，例示了将电阻发热体14按照一笔画的要领遍及陶瓷板12的整个面进行布线的1区加热器，但并不特别限定于此。例如，也可以采用将陶瓷板12的整个面分为多个区域并在每个区域中将电阻发热体按照一笔画的要领进行布线的多区加热器。在该情况下，对各区域的电阻发热体设置一对加热杆即可。
也可以采用图6的RF电极416来代替上述实施方式的RF电极16。在图6中，对与上述的实施方式相同的构成要素标注相同的附图标记。RF电极416是用圆筒状的连结部416c连接内侧圆形电极416a的外周缘和外侧圆环电极416b的内周缘而成的。内侧圆形电极416a和外侧圆环电极416b以在高度不同的面上成为上下两层的方式配置。构成RF连杆构件40(分支部44)的2根RF杆42中的1根与内侧圆形电极416a的背面连接，另1根与外侧圆环电极416b的背面连接。即，2根RF杆42与RF电极416的高度不同的各面连接。即使这样，也能够得到与上述的实施方式相同的效果。另外，由于RF电极416在陶瓷板12的内部涉及高度不同的多个面而设置，因此能够针对RF电极416的高度不同的每一面改变等离子体的密度。进而，2根RF杆42独立地与RF电极416的各面连接，因此能够确保2根RF杆42间的距离。例如，通过增大发热的2根RF杆42之间的距离，能够防止RF杆42彼此相互加热。此外，由于靠近陶瓷板12的背面12b的外侧圆环电极416b和远离背面12b的内侧圆环电极416a分别与RF杆42连接，因此与靠近背面12b的外侧圆环电极416b连接的RF杆42的孔的深度变浅，陶瓷板12的加工负荷变小，能够抑制破损风险。与此相对，在远离背面12b的内侧圆环电极416a上连接有2根RF杆42的情况下，2根RF杆42的孔的深度变深，陶瓷板12的加工负荷变大，破损风险提高。需说明的是，在图6中，也可以设置与上述的实施方式相同的电阻发热体14、加热杆24。另外，在图6中，也可以代替RF连杆构件40而采用图4的RF连杆构件340。
本申请以2019年8月8日申请的日本专利申请第2019-146413号为优先权主张的基础，通过引用将其全部内容包含在本说明书中。
产业上的可利用性
本发明能够用作例如蚀刻装置、CVD装置等半导体制造装置所使用的构件。
符号说明
10：陶瓷加热器、12：陶瓷板、12a：晶片载置面、12b：背面、13：孔、14：电阻发热体、16：RF电极、20：陶瓷轴、20a：第一凸缘、20b：第二凸缘、22：中空内部、24：加热杆、26：电缆、28：加热器电源、30：RF连接器、32：插座、34：插入孔、36：RF基杆、37：电缆、38：RF电源、40：RF连杆构件、42：RF杆、42a：凹部、44：分支部、140：RF连杆构件、142：RF杆、144：分支部、145：汇集部、240：RF连杆构件、242：RF杆、244：分支部、245：第一汇集部、246：第二汇集部、340：RF连杆构件、342：RF杆、344：分支部、346：汇集部、416：RF电极、416a：内侧圆形电极、416b：外侧圆环电极、416c：连结部。

Claims (8)

1.一种半导体制造装置用构件，其是在表面为晶片载置面的陶瓷板的背面设置有中空陶瓷轴的结构，具备：
RF电极，其埋设于所述陶瓷板；
RF连接器，其配置在所述陶瓷轴的中空内部的外侧；以及
RF连杆构件，其设置在所述RF连接器与所述RF电极之间，
所述RF连杆构件具有由多个RF杆构成的分支部，所述分支部延续至所述陶瓷轴的外侧。
2.根据权利要求1所述的半导体制造装置用构件，所述多个RF杆在所述陶瓷板的背面的近前的第一汇集部汇集成1个而与所述RF电极连接。
3.根据权利要求1所述的半导体制造装置用构件，所述多个RF杆分别与所述RF电极连接。
4.根据权利要求3所述的半导体制造装置用构件，所述RF电极在所述陶瓷板的内部涉及高度不同的多个面而设置，
所述多个RF杆分别与所述RF电极的各面连接。
5.根据权利要求1～4中任一项所述的半导体制造装置用构件，所述多个RF杆在所述RF连接器的近前的第二汇集部汇集成1个而与所述RF连接器连接。
6.根据权利要求1～5中任一项所述的半导体制造装置用构件，将所述RF杆沿与长度方向垂直的方向切断时的截面为在外周部具有至少1个凹部的形状。
7.根据权利要求1～6中任一项所述的半导体制造装置用构件，具备：
电阻发热体，其埋设于所述陶瓷板；以及
一对加热杆，其与所述电阻发热体连接，并穿过所述陶瓷轴的中空内部而设置至所述陶瓷轴的外侧为止，
所述RF连杆构件的基端位于比所述加热杆的基端更靠近所述陶瓷轴的位置。
8.根据权利要求1～6中任一项所述的半导体制造装置用构件，具备：
电阻发热体，其埋设于所述陶瓷板，
一对加热杆，其与所述电阻发热体连接，并穿过所述陶瓷轴的中空内部而设置至所述陶瓷轴的外侧为止，
所述RF杆比所述加热杆粗。
CN202080056190.2A 2019-08-08 2020-07-28 半导体制造装置用构件 Pending CN114245936A (zh)

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