CN108376635B - 晶圆支承台 - Google Patents
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Abstract
本发明提供一种晶圆支承台。晶圆支承台(20)具备屏蔽片(40)和屏蔽管(42)。屏蔽片(40)在等离子体产生电极(26)与加热器电极(30)之间以与两者非接触的状态埋设于陶瓷基体(22)中。屏蔽管(42)与屏蔽片(40)电连接,从陶瓷基体(22)的背面(22b)向陶瓷轴(24)的内部(陶瓷基体(22)的外部)延伸。等离子体产生电极(26)的杆(28)以与屏蔽管(42)非接触的状态贯穿于屏蔽管(42)的内部。加热器电极(30)的配线构件(31a、32a)以与屏蔽管(42)非接触的状态配置于屏蔽管(42)的外部。
Description
技术领域
本发明涉及一种晶圆支承台。
背景技术
以往,在半导体制造工艺中,有时采用等离子体CVD工序。在等离子体CVD工序中,将晶圆载置于晶圆支承台的晶圆载置面上。在晶圆支承台的陶瓷基体中埋设有接地的下部电极和对晶圆进行加热的加热器电极。另一方面,在晶圆的上方空间配置有与RF电源连接的上部电极。并且,若向上部电极供给RF电流,则在上部电极与下部电极之间的空间中产生等离子体,利用该等离子体将薄膜蒸镀于晶圆。此外,也有时将下部电极与RF电源连接,使上部电极接地。
在这样的等离子体CVD工序中,由于由RF电流产生的RF磁场的时间变化,感应出RF电场,加热器电极有时由于RF噪声而受到影响。考虑这一点,在专利文献1中,在下部电极与加热器电极之间设置有RF屏蔽件。
然而,即使是在下部电极与加热器电极之间设置有RF屏蔽件的情况下,若RF电流的频率变高,则也难以充分防止RF噪声对加热器电路的影响。
专利文献1:美国专利6683274号说明书
发明内容
本发明是为了解决这样的问题而做成的,主要目的在于在等离子体产生装置所使用的晶圆支承台中充分防止RF噪声对加热器电路的影响。
在本发明的晶圆支承台中,在具备晶圆载置面的陶瓷基体中,从所述晶圆载置面一侧起按照等离子体产生电极、加热器电极的顺序以间隔状态埋设,所述等离子体产生电极的配线构件和所述加热器电极的配线构件从所述陶瓷基体的与所述晶圆载置面相反侧的面被引出到所述陶瓷基体的外部,
该晶圆支承台具备:屏蔽片,其在所述等离子体产生电极与所述加热器电极之间以与两者非接触的状态埋设于所述陶瓷基体中;
屏蔽管,其与所述屏蔽片电连接,从所述陶瓷基体的与所述晶圆载置面相反侧的面延伸到所述陶瓷基体的外部,
所述等离子体产生电极的配线构件以与所述屏蔽管非接触的状态贯穿于所述屏蔽管的内部,
所述加热器电极的配线构件以与所述屏蔽管非接触的状态配置于所述屏蔽管的外部。
在该晶圆支承台中,屏蔽片防止在等离子体产生电极的周围产生的RF电场与加热器电极耦合。该RF电场是由于由流过等离子体产生电极的RF电流产生的RF磁场的时间变化而被感生的。另外,屏蔽管防止在等离子体产生电极的配线构件的周围产生的RF电场与加热器电极耦合。该RF电场是由于由流过等离子体产生电极的配线构件的RF电流产生的RF磁场的时间变化而被感生的。在专利文献1中不具备这样的屏蔽管,因此,无法防止RF电场与加热器电极的配线构件耦合,但在本发明中具备这样的屏蔽管,因此,能够防止RF电场与加热器电极的配线构件耦合。因而,根据本发明,能够充分防止RF噪声对包括加热器电极及其配线构件在内的加热器电路的影响。
在本发明的晶圆支承台中,也可以是,所述加热器电极的配线构件在所述加热器电极与外部电源之间具备低通滤波器。这样的话,能够利用屏蔽片和屏蔽管来防止未被低通滤波器完全防止的RF噪声。
在本发明的晶圆支承台中,也可以是,所述屏蔽片是网片、冲孔金属板或金属板的板状构件,所述屏蔽管是网状管、冲孔金属管或金属板的筒状构件。网眼的大小、冲孔金属的孔的大小被设计成能够充分防止RF噪声的影响。
在本发明的晶圆支承台中,也可以是,所述等离子体产生电极既可以是施加RF电源的电压的电极,也可以是接地电极。在任一情况下,都产生RF噪声的问题,因此,应用本发明的意义较高。
在本发明的晶圆支承台中,优选流过所述等离子体产生电极的RF电流的频率是13MHz以上。在RF电流的频率是13MHz以上(特别是27MHz以上)的情况下,RF噪声的影响易于变大,因此,应用本发明的意义较高。
附图说明
图1是表示本实施方式的等离子体产生装置10的概略结构的剖视图。
图2是表示另一实施方式的等离子体产生装置10的概略结构的剖视图。
附图标记说明
10等离子体产生装置、20晶圆支承台、22陶瓷基体、22a晶圆载置面、22b背面、24陶瓷轴、24a凸缘、26等离子体产生电极、28杆、29插座、30加热器电极、31第1加热器电极、31a配线构件、32第2加热器电极、32a配线构件、33,34低通滤波器、35,36交流电源、40屏蔽片、42屏蔽管、43波纹管、44圆柱构件、50上部电极、52RF电源、W晶圆、Z1第1区域、Z2第2区域、G地线。
具体实施方式
以下,参照附图说明本发明的优选的实施方式。图1是表示等离子体产生装置10的概略结构的剖视图。
等离子体产生装置10具备晶圆支承台20和上部电极50。
晶圆支承台20用于支承利用等离子体来进行CVD或蚀刻等的晶圆W而进行加热,安装于未图示的半导体工艺用的腔室的内部。该晶圆支承台20具备陶瓷基体22和陶瓷轴24。
陶瓷基体22是AlN制的圆板状构件。该陶瓷基体22具备能够载置晶圆W的晶圆载置面22a。在陶瓷基体22的与晶圆载置面22a相反侧的面(背面)22b接合有陶瓷轴24。在陶瓷基体22中埋设有等离子体产生电极26、加热器电极30以及屏蔽片40。从晶圆载置面22a一侧起依次以间隔状态埋设等离子体产生电极26和加热器电极30。屏蔽片40以与等离子体产生电极26和加热器电极30非接触的状态埋设于等离子体产生电极26与加热器电极30之间。
等离子体产生电极26是由导电性的网片构成的圆形电极,与晶圆载置面22a平行或大致平行地设置。作为与等离子体产生电极26电连接的配线构件的杆28从陶瓷基体22的背面22b向陶瓷轴24的内部(陶瓷基体22的外部)引出,与导电金属制的圆柱构件44电连接。
加热器电极30与晶圆载置面22a平行或大致平行地设置。加热器电极30由第1加热器电极31和第2加热器电极32构成,第1加热器电极31设置于距陶瓷基体22的中心预定半径的圆的内侧的区域(第1区域Z1、参照图1的单点划线),第2加热器电极32设置于该圆的外侧的区域(第2区域Z2、参照图1的双点划线)。第1加热器电极31是在除了第1区域Z1的中心附近之外的大致整个面以一笔画的方法将线圈配线到另一端子而成的电极。在第1加热器电极31的两端分别电连接有配线构件31a、31a。一个配线构件31a从陶瓷基体22的背面22b向陶瓷轴24的内部(陶瓷基体22的外部)引出,以电绝缘的状态贯通圆柱构件44,经由低通滤波器33与交流电源35连接。另一配线构件31a与地线G电连接。第2加热器电极32是在第2区域Z2的大致整个面上以一笔画的方法将线圈配线而成的。在第2加热器电极32的两端分别电连接有配线构件32a、32a。一个配线构件32a从陶瓷基体22的背面22b向陶瓷轴24的内部(陶瓷基体22的外部)引出,以电绝缘的状态贯通圆柱构件44,经由低通滤波器34与交流电源36连接。另一配线构件32a与地线G电连接。
屏蔽片40是圆形的导电性的网片,与晶圆载置面22a平行或大致平行地设置。屏蔽片40的直径与等离子体产生电极26的直径相同或比等离子体产生电极26的直径稍大。屏蔽片40的网眼尺寸被设定成例如0.7mm以下,以便能够发挥随后论述的效果、即防止RF电场与第1加热器电极31和第2加热器电极32耦合的效果。与屏蔽片40电连接的屏蔽管42从陶瓷基体22的背面22b向陶瓷轴24的内部(陶瓷基体22的外部)延伸,与圆柱构件44电连接。屏蔽管42是导电性的网状管,经由陶瓷基体22的没有对第1加热器电极31配线的中心附近而从背面22b延伸出。因此,屏蔽管42不与加热器电极30接触。屏蔽管42的网眼尺寸被设定成例如0.7mm以下,以便能够发挥随后论述的效果、即防止RF电场与第1加热器电极31的配线构件31a和第2加热器电极32的配线构件32a耦合的效果。在屏蔽管42的内部以与屏蔽管42非接触的状态贯穿有等离子体产生电极26的杆28。
等离子体产生电极26、加热器电极30、屏蔽片40和屏蔽管42的材质既可以相同,也可以不同。作为材质,只要具有导电性就没有特别限定,能够列举出例如Mo、W、Nb、Mo化合物、W化合物或Nb化合物。优选其中的与陶瓷基体22之间的热膨胀系数差较小的材质。杆28和配线构件31a、32a的材质也与其相同,但优选具有抗氧化性的Ni等材质。
陶瓷轴24与陶瓷基体22同样,是AlN制的圆筒状构件。陶瓷轴24的上部端面利用扩散接合、TCB(热压接合,Thermal compression bonding)与陶瓷基体22的背面22b接合。TCB是指将金属接合材料夹入作为接合对象的两个构件之间,以加热到金属接合材料的固相线温度以下的温度的状态将两个构件加压接合的公知的方法。在陶瓷轴24的下部开口的周围设置有凸缘24a。
陶瓷轴24的凸缘24a与连接到地线G的导电金属制的圆柱构件44连接。圆柱构件44的顶面和底面具有与凸缘24a的外径同等以上的直径。在圆柱构件44的顶面的圆形孔中埋设有金属制的插座29,在插座29中接合有杆28的下端。在圆柱构件44的顶面的环状的孔中配置有作为金属制的伸缩管的波纹管43,在波纹管43的上端接合有屏蔽管42的下端。因此,杆28经由插座29和圆柱构件44与地线G电连接,屏蔽管42经由波纹管43和圆柱构件44与地线G电连接。
上部电极50固定于与陶瓷基体22的晶圆载置面22a相对的上方位置(例如未图示的腔室的顶面)。该上部电极50与RF电源52连接。因此,RF电流被供给到上部电极50。RF电流的频率是例如13MHz或27MHz。
接着,对等离子体产生装置10的使用例进行说明。在未图示的腔室内配置等离子体产生装置10,在晶圆载置面22a上载置晶圆W。并且,向上部电极50供给RF电流。这样一来,在由上部电极50和埋设到陶瓷基体22中的等离子体产生电极26构成的平行平板电极间产生等离子体,利用该等离子体对晶圆W实施CVD成膜或实施蚀刻。另外,基于未图示的热电偶的检测信号求出晶圆W的温度,控制向构成加热器电极30的第1加热器电极31和第2加热器电极32施加的电压,以使晶圆W的温度成为设定温度(例如350℃、300℃)。
在等离子体产生电极26的周边,由于在等离子体产生电极26中流动的RF电流产生的RF磁场的时间变化,感应出RF电场。屏蔽片40防止该RF电场与构成加热器电极30的第1加热器电极31和第2加热器电极32耦合。另外,在等离子体产生电极26的杆28的周边,由于在杆28中流动的RF电流产生的RF磁场的时间变化,感应出RF电场。屏蔽管42防止该RF电场与第1加热器电极31的配线构件31a和第2加热器电极32的配线构件32a耦合。因此,能够充分防止RF噪声对包括第1加热器电极31和第2加热器电极32及其配线构件31a、32a在内的加热器电路的影响。其结果,能够精度良好地进行加热器电极30的温度控制。
接着,对等离子体产生装置10的制造例进行说明。在此,对晶圆支承台20的制造例进行说明。此外,该制造例应用了众所周知的技术,因此,仅说明概略。
首先,将加热器电极30(第1加热器电极31和第2加热器电极32)、屏蔽片40以及等离子体产生电极26以大致平行且各自成为非接触的状态的方式埋设于被调配成需要的规格的陶瓷粉末,使用成形机对其进行冲压成形。接着,将所获得的成形体搬入烧制炉,升温到预定温度(2000℃以下)并进行烧制。由此,获得以大致平行且各自处于非接触的状态埋设有加热器电极30、屏蔽片40以及等离子体产生电极26的陶瓷基体22。烧制炉能够使用热压炉、常压炉等。通过对所获得的陶瓷基体22实施表面加工,将陶瓷基体22调整成预定尺寸。
另一方面,与陶瓷基体22分别地准备陶瓷轴24。具体而言,使用陶瓷轴用的金属模具以CIP(冷等静压)进行成形,利用常压炉将所获得的成形体以预定温度(2000℃以下)进行烧制。通过对所获得的陶瓷轴24实施表面加工,将陶瓷轴24调整成预定尺寸。
然后,在陶瓷基体22的背面22b配置陶瓷轴24,利用上述扩散接合或TCB将两者接合。由此,陶瓷基体22和陶瓷轴24被接合而成为一体。对所获得的一体品的表面实施最终加工,将该一体品调整成预定尺寸。然后,从陶瓷基体22的背面22b设置沉头孔而使等离子体产生电极26露出,利用钎焊接合等将杆28接合于该露出的部分。对于屏蔽片40与屏蔽管42之间的接合、第1加热器电极31、第2加热器电极32与其配线构件31a、32a的接合,也与此同样地利用钎焊接合等进行接合。之后,将杆28和屏蔽管42经由圆柱构件44与地线G连接,并且,经由低通滤波器33、34将一个配线构件31a、32a与交流电源35、36连接,将另一配线构件31a、32a与地线G连接,获得晶圆支承台20。
在以上详细论述的晶圆支承台20中,屏蔽片40防止在等离子体产生电极26的周边产生的RF电场与第1加热器电极31和第2加热器电极32耦合。另外,屏蔽管42防止在杆28的周边产生的RF电场与第1加热器电极31的配线构件31a和第2加热器电极32的配线构件32a耦合。因而,能够充分防止RF噪声对包括第1加热器电极31和第2加热器电极32及其配线构件31a、32a在内的加热器电路的影响。其结果,能够精度良好地进行第1加热器电极31和第2加热器电极32的温度控制。
另外,晶圆支承台20除了具备屏蔽片40和屏蔽管42之外,还对第1加热器电极31的配线构件31a和第2加热器电极32的配线构件32a分别设置有低通滤波器33、34。因此,能够进一步防止RF噪声对加热器电路的影响。换言之,能利用屏蔽片40和屏蔽管42防止未被低通滤波器33、34完全防止的RF噪声。在RF电流的频率是13MHz以上的情况下,特别是27MHz以上的情况下,这样的效果显著。
此外,本发明并不由上述实施方式进行任何限定,只要属于本发明的技术范围,当然能以各种形态实施。
例如,在上述的实施方式中,将上部电极50与RF电源52连接,将等离子体产生电极26的杆28与地线G连接,但也可以如图2所示那样,将上部电极50与地线G连接,经由插座29将等离子体产生电极26的杆28与RF电源52连接。图2中的附图标记表示与上述实施方式相同的构成要素。在该情况下,插座29的周围被未图示的绝缘膜覆盖,插座29与圆柱构件44被电绝缘。即使在该情况下,也获得与上述实施方式的效果同样的效果。
在上述实施方式中,陶瓷基体22、陶瓷轴24的材质设为AlN,但并不特别限定于此,也可以设为例如氧化铝、碳化硅、氮化硅等。
在上述实施方式中,通过对等离子体产生电极26施加电压,能够将晶圆W吸附于晶圆载置面22a。另外,也可以在陶瓷基体22中进一步埋设静电电极,将静电电极的配线构件从陶瓷基体22的背面22b向陶瓷轴24的内部(陶瓷基体22的外侧)引出。这样的话,通过对静电电极施加电压,也能够将晶圆W吸附于晶圆载置面22a。此外,优选静电电极的配线构件配置于屏蔽管42的外部。
在上述实施方式中,采用了导电性的网片和网状管作为屏蔽片40和屏蔽管42,但并不特别限定于这些,也可以采用例如冲孔金属的片材、管。在该情况下,冲孔金属的孔的大小被设计成能够充分防止RF噪声的影响。或者也可以采用金属板的板状构件、筒状构件。这样的话,能够更可靠地防止RF噪声的影响。
在上述的实施方式中,除了采用屏蔽片40和屏蔽管42之外,还采用了低通滤波器33、34,但只要是频率13MHz左右的RF电流,即使没有屏蔽片40和屏蔽管42,也能够通过低通滤波器33、34的设计来一定程度上防止RF噪声对加热器电路的影响。不过,只要如上述那样将屏蔽片40和屏蔽管42装入陶瓷基体22,就能够更可靠地防止RF噪声的影响。
在上述的实施方式中,对配线构件31a、32a设置有低通滤波器33、34,但在利用屏蔽片40和屏蔽管42能够充分防止RF噪声的影响的情况下,也可以省略低通滤波器33、34。
在上述的实施方式中,例示了具有第1加热器电极31和第2加热器电极32作为加热器电极30的两区域加热器,但并不特别限定于此,既可以是1区域加热器,也可是被分割成3区域以上的多区域加热器。
本申请将2017年1月30日提出申请的日本国专利申请第2017-013980号作为优先权主张的基础,通过引用将其内容全部包含于本说明书中。
产业上的可利用性
本发明能够利用于例如半导体制造工艺。
Claims (5)
1.一种晶圆支承台,在具备晶圆载置面的陶瓷基体中,从所述晶圆载置面一侧起按照等离子体产生电极、加热器电极的顺序以间隔状态埋设,所述等离子体产生电极的配线构件和所述加热器电极的配线构件从所述陶瓷基体的与所述晶圆载置面相反侧的面被引出到所述陶瓷基体的外部,其特征在于,
该晶圆支承台具备:
屏蔽片,其在所述等离子体产生电极与所述加热器电极之间以与两者非接触的状态埋设于所述陶瓷基体中;以及
屏蔽管,其在所述陶瓷基体的内部与所述屏蔽片电连接,从所述陶瓷基体的与所述晶圆载置面相反侧的面延伸到所述陶瓷基体的外部,
所述等离子体产生电极的配线构件以与所述屏蔽管非接触的状态贯穿于所述屏蔽管的内部,
所述加热器电极的配线构件以与所述屏蔽管非接触的状态配置于所述屏蔽管的外部。
2.根据权利要求1所述的晶圆支承台,其特征在于,
所述加热器电极的配线构件在所述加热器电极与外部电源之间具备低通滤波器。
3.根据权利要求1或2所述的晶圆支承台,其特征在于,
所述屏蔽片是网片、冲孔金属板或金属板的板状构件,
所述屏蔽管是网状管、冲孔金属管或金属板的筒状构件。
4.根据权利要求1或2所述的晶圆支承台,其特征在于,
所述等离子体产生电极是施加RF电源的电压的电极或接地电极。
5.根据权利要求1或2所述的晶圆支承台,其特征在于,
流过所述等离子体产生电极的RF电流的频率是13MHz以上。
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Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016142237A1 (en) * | 2015-03-11 | 2016-09-15 | Nv Bekaert Sa | Carrier for temporary bonded wafers |
JP6758143B2 (ja) * | 2016-09-29 | 2020-09-23 | 日本特殊陶業株式会社 | 加熱装置 |
US11062887B2 (en) * | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
CN110265323B (zh) * | 2019-05-31 | 2021-09-03 | 拓荆科技股份有限公司 | 具有接点阵列的晶圆加热座 |
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US12020957B2 (en) * | 2020-08-31 | 2024-06-25 | Applied Materials, Inc. | Heater assembly with process gap control for batch processing chambers |
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WO2022168368A1 (ja) * | 2021-02-04 | 2022-08-11 | 日本碍子株式会社 | 半導体製造装置用部材及びその製法 |
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US12094748B2 (en) | 2021-08-18 | 2024-09-17 | Applied Materials, Inc. | Bipolar esc with balanced RF impedance |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02129373A (ja) * | 1988-11-07 | 1990-05-17 | Kokusai Electric Co Ltd | ドライプロセス装置における高周波印加電極の加熱装置 |
JPH10204645A (ja) * | 1997-01-17 | 1998-08-04 | Hitachi Electron Eng Co Ltd | 下部電極 |
TW200301934A (en) * | 2001-12-13 | 2003-07-16 | Tokyo Electron Ltd | Plasma process apparatus |
CN1701421A (zh) * | 2003-05-02 | 2005-11-23 | 东京毅力科创株式会社 | 处理气体导入机构和等离子体处理装置 |
CN103229272A (zh) * | 2010-11-24 | 2013-07-31 | 德国罗特·劳股份有限公司 | 等离子体加工装置 |
CN104046965A (zh) * | 2014-05-27 | 2014-09-17 | 中国电子科技集团公司第四十八研究所 | 一种辐射加热元件、辐射加热器及mocvd反应器 |
CN105887049A (zh) * | 2016-04-21 | 2016-08-24 | 郑亮 | 一种低温纳米疏水真空放电沉积镀膜方法 |
CN106119811A (zh) * | 2016-08-30 | 2016-11-16 | 湖南玉丰真空科学技术有限公司 | 一种真空设备的基板加热台 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4236329B2 (ja) * | 1999-04-15 | 2009-03-11 | 日本碍子株式会社 | プラズマ処理装置 |
KR100588774B1 (ko) | 2001-11-26 | 2006-06-14 | 주성엔지니어링(주) | 웨이퍼 서셉터 |
WO2004097919A1 (ja) | 2003-05-02 | 2004-11-11 | Tokyo Electron Limited | 処理ガス導入機構およびプラズマ処理装置 |
US7354288B2 (en) * | 2005-06-03 | 2008-04-08 | Applied Materials, Inc. | Substrate support with clamping electrical connector |
US20090314208A1 (en) * | 2008-06-24 | 2009-12-24 | Applied Materials, Inc. | Pedestal heater for low temperature pecvd application |
US8633648B2 (en) * | 2011-06-28 | 2014-01-21 | Recarbon, Inc. | Gas conversion system |
WO2015146563A1 (ja) * | 2014-03-27 | 2015-10-01 | 日本碍子株式会社 | セラミックスプレートと金属製の円筒部材との接合構造 |
KR102158668B1 (ko) * | 2016-04-22 | 2020-09-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마 한정 피쳐들을 갖는 기판 지지 페디스털 |
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02129373A (ja) * | 1988-11-07 | 1990-05-17 | Kokusai Electric Co Ltd | ドライプロセス装置における高周波印加電極の加熱装置 |
JPH10204645A (ja) * | 1997-01-17 | 1998-08-04 | Hitachi Electron Eng Co Ltd | 下部電極 |
TW200301934A (en) * | 2001-12-13 | 2003-07-16 | Tokyo Electron Ltd | Plasma process apparatus |
CN1701421A (zh) * | 2003-05-02 | 2005-11-23 | 东京毅力科创株式会社 | 处理气体导入机构和等离子体处理装置 |
CN103229272A (zh) * | 2010-11-24 | 2013-07-31 | 德国罗特·劳股份有限公司 | 等离子体加工装置 |
CN104046965A (zh) * | 2014-05-27 | 2014-09-17 | 中国电子科技集团公司第四十八研究所 | 一种辐射加热元件、辐射加热器及mocvd反应器 |
CN105887049A (zh) * | 2016-04-21 | 2016-08-24 | 郑亮 | 一种低温纳米疏水真空放电沉积镀膜方法 |
CN106119811A (zh) * | 2016-08-30 | 2016-11-16 | 湖南玉丰真空科学技术有限公司 | 一种真空设备的基板加热台 |
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CN108376635A (zh) | 2018-08-07 |
TW201827642A (zh) | 2018-08-01 |
JP2018123348A (ja) | 2018-08-09 |
KR20200067241A (ko) | 2020-06-12 |
JP6615134B2 (ja) | 2019-12-04 |
KR102368339B1 (ko) | 2022-03-02 |
TWI749161B (zh) | 2021-12-11 |
US10861680B2 (en) | 2020-12-08 |
US20180218885A1 (en) | 2018-08-02 |
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