TW201827642A - 晶圓支撐台 - Google Patents

晶圓支撐台 Download PDF

Info

Publication number
TW201827642A
TW201827642A TW107102935A TW107102935A TW201827642A TW 201827642 A TW201827642 A TW 201827642A TW 107102935 A TW107102935 A TW 107102935A TW 107102935 A TW107102935 A TW 107102935A TW 201827642 A TW201827642 A TW 201827642A
Authority
TW
Taiwan
Prior art keywords
electrode
heater
plasma generating
wafer
ceramic substrate
Prior art date
Application number
TW107102935A
Other languages
English (en)
Other versions
TWI749161B (zh
Inventor
前田大樹
海野豊
Original Assignee
日商日本碍子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日本碍子股份有限公司 filed Critical 日商日本碍子股份有限公司
Publication of TW201827642A publication Critical patent/TW201827642A/zh
Application granted granted Critical
Publication of TWI749161B publication Critical patent/TWI749161B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0266—Shields electromagnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

晶圓支撐台20包括隔離片40與隔離管42。隔離片40係在電漿產生電極26與加熱器電極30之間在與兩者不接觸之狀態被埋設於陶瓷基體22。隔離管42係與隔離片40以電性連接，並從陶瓷基體22之背面22b被延伸至陶瓷軸24的內部(陶瓷基體22的外部)。電漿產生電極之棒28係在與隔離管42不接觸之狀態被插入隔離管42的內部。加熱器電極30之配線構件31a、32a係在與隔離管42不接觸之狀態被配置於隔離管42的外部。

Description

晶圓支撐台
本發明係有關於一種晶圓支撐台。
自以往，在半導體製程，有的採用電漿CVD步驟。在電漿CVD步驟，將晶圓載置於晶圓支撐台的晶圓載置面。在晶圓支撐台的陶瓷基體，被埋設與接地連接的下部電極和對晶圓加熱的加熱器電極。另一方面，在晶圓之上方空間，被配置與RF電源連接的上部電極。而且，將RF電流供給至上部電極時，在上部電極與下部電極之間的空間產生電漿，再利用此電漿將薄膜蒸鍍於晶圓。此外，亦有的將下部電極與RF電源連接，並將上部電極與接地連接。
在這種電漿CVD步驟，因藉RF電流所產生之RF磁場的時間變化而感應RF電場，加熱器電極可能因RF雜訊而受到影響。考慮這一點，在專利文獻1將RF隔離片設置於下部電極與加熱器電極之間。
【先行專利文獻】 【專利文獻】
[專利文獻1]美國專利6683274號專利說明書
可是，在將RF隔離片設置於下部電極與加熱器電極之間的情況，亦RF電流之頻率變高時，難充分地防止RF雜訊之對加熱器電路的影響。
本發明係為了解決這種課題而開發的，其主要目的在於在電漿產生裝置所使用之晶圓支撐台，充分地防止RF雜訊之對加熱器電路的影響。
本發明之晶圓支撐台係在包括晶圓載置面之陶瓷基體，從接近該晶圓載置面之側，電漿產生電極、加熱器電極在按照此順序分開之狀態被埋設，該電漿產生電極之配線構件及該加熱器電極之配線構件從該陶瓷基體之與該晶圓載置面係相反側的面被拉出至該陶瓷基體之外部，其包括：隔離片，係在該電漿產生電極與該加熱器電極之間在與兩者不接觸之狀態被埋設於該陶瓷基體；及隔離管，係與該隔離片以電性連接，並從該陶瓷基體之與該晶圓載置面係相反側的面被延伸至該陶瓷基體的外部；該電漿產生電極之配線構件係在與該隔離管不接觸之狀態被插入該隔離管的內部；該加熱器電極之配線構件係在與該隔離管不接觸之狀態被配置於該隔離管的外部。
在本晶圓支撐台，隔離片係防止在電漿產生電極之周圍所產生的RF電場與加熱器電極耦合。此RF電場係因藉在電漿產生電極流動的RF電流所產生之RF磁場的時間變化所感應。又，隔離管係防止在電漿產生電極之配線構件的周 圍所產生之RF電場與加熱器電極耦合。此RF電場係因藉在電漿產生電極之配線構件流動的RF電流所產生之RF磁場的時間變化所感應。在專利文獻1，因為未包括這種隔離管，所以無法防止RF電場與加熱器電極之配線構件耦合，但是因為在本發明包括這種隔離管，所以可防止與加熱器電極之配線構件耦合。因此，若依據本發明，可充分地防止RF雜訊之對包含加熱器電極及其配線構件之加熱器電路的影響。
在本發明之晶圓支撐台，亦可該加熱器電極之配線構件係在該加熱器電極與外部電源之間包括低通濾波器。依此方式，藉隔離片及隔離管可防止低通濾波器防止不了之RF雜訊。
在本發明之晶圓支撐台，亦可該隔離片係網孔、衝孔金屬或金屬板之面狀構件，該隔離管係網孔、衝孔金屬或金屬板之筒狀構件。網孔之大小或衝孔金屬之孔的大小係被設計成可充分地防止RF雜訊的影響。
在本發明之晶圓支撐台，該電漿產生電極係亦可是施加RF電源之電壓的電極，亦可是接地電極。因為在任一種的情況都發生RF雜訊的問題，所以應用本發明之意義大。
在本發明之晶圓支撐台，流至該電漿產生電極之RF電流的頻率係13MHz以上為佳。在RF電流之頻率係13MHz以上(尤其27MHz以上)的情況，因為RF雜訊之影響易變大，所以應用本發明之意義大。
10‧‧‧電漿產生裝置
20‧‧‧晶圓支撐台
22‧‧‧陶瓷基體
22a‧‧‧晶圓載置面
22b‧‧‧背面
24‧‧‧陶瓷軸
24a‧‧‧凸緣
26‧‧‧電漿產生電極
28‧‧‧棒
29‧‧‧插座
30‧‧‧加熱器電極
31‧‧‧第1加熱器電極
31a‧‧‧配線構件
32‧‧‧第2加熱器電極
32a‧‧‧配線構件
33、34‧‧‧低通濾波器
35、36‧‧‧交流電源
40‧‧‧隔離片
42‧‧‧隔離管
43‧‧‧伸縮囊
44‧‧‧圓柱構件
50‧‧‧上部電源
52‧‧‧RF電源
W‧‧‧晶圓
Z1‧‧‧第1區
Z2‧‧‧第2區
G‧‧‧接地
第1圖係表示本實施形態之電漿產生裝置10之示意構成的剖面圖。
第2圖係表示別的實施形態之電漿產生裝置10之示意構成的剖面圖。
以下，一面參照圖面，一面說明本發明之適合的實施形態。第1圖係表示本實施形態之電漿產生裝置10之示意構成的剖面圖。
電漿產生裝置10包括晶圓支撐台20與上部電源50。
晶圓支撐台20係支撐為了利用電漿來進行CVD或蝕刻等之晶圓W並加熱所使用者，並被安裝於未圖示之半導體處理用之室的內部。此晶圓支撐台20包括陶瓷基體22與陶瓷軸24。
陶瓷基體22係AlN製之圓板形構件。此陶瓷基體22包括可載置晶圓W之晶圓載置面22a。將陶瓷軸24被接合於陶瓷基體22之和晶圓載置面22a係相反側的面(背面)22b。在陶瓷基體22，被埋設電漿產生電極26、加熱器電極30以及隔離片40。電漿產生電極26與加熱器電極30係在從接近晶圓載置面22a之側按照此順序分開之狀態被埋設。隔離片40係在電漿產生電極26與加熱器電極30之間在與兩者不接觸之狀態所埋設。
電漿產生電極26係由導電性之網孔片所構成的圓形電極，並被設置成與晶圓載置面22a平行或大致平行。作為 與電漿產生電極26以電性連接之配線構件的棒28係從陶瓷基體22的背面22b被拉出至陶瓷軸24的內部(陶瓷基體22的外部)，並與導電金屬製的圓柱構件44以電性連接。
加熱器電極30係被設置成與晶圓載置面22a平行或大致平行。加熱器電極30係由被設置於從陶瓷基體22的中心既定半徑之圓的內側之區(第1區Z1，參照第1圖之一點鏈線)的第1加熱器電極31、與被設置於該圓的外側之區(第2區Z2，參照第1圖之兩點鏈線)的第2加熱器電極32所構成。第1加熱器電極31係在將第1區Z1之中心附近除外的幾乎整個面以一筆畫之要領對線圈配線至另一方的端子者。在第1加熱器電極31之兩端，分別以電性連接配線構件31a、31a。一方之配線構件31a係從陶瓷基體22的背面22b被拉出至陶瓷軸24的內部(陶瓷基體22的外部)，並在電性絕緣之狀態貫穿圓柱構件44，再經由低通濾波器33與交流電源35連接。另一方之配線構件31a係與接地G以電性連接。第2加熱器電極32在第2區Z2之幾乎整個面以一筆畫之要領對線圈配線者。在第2加熱器電極32之兩端，分別以電性連接配線構件32a、32a。一方之配線構件32a係從陶瓷基體22的背面22b被拉出至陶瓷軸24的內部(陶瓷基體22的外部)，並在電性絕緣之狀態貫穿圓柱構件44，再經由低通濾波器34與交流電源36連接。另一方之配線構件32a係與接地G以電性連接。
隔離片40係圓形之導電性的網孔片，並被設置成與晶圓載置面22a平行或大致平行。隔離片40的直徑係與電漿產生電極26相等或比其更稍大。隔離片40之網孔尺寸係為 了可發揮後述之效果，即防止RF電場與第1及第2加熱器電極31、32耦合的效果，被設定成例如0.7mm以下。與隔離片40以電性連接的隔離管42係從陶瓷基體22的背面22b被延伸出至陶瓷軸24的內部(陶瓷基體22的外部)，並與圓柱構件44以電性連接。隔離管42係導電性之網孔管，並經由未對第1加熱器電極31配線之陶瓷基體22的中心附近，從背面22b被延伸出。因此，隔離管42係與加熱器電極30未接觸。隔離管42之網孔尺寸係為了可發揮後述之效果，即防止RF電場與第1及第2加熱器電極31、32之各配線構件31a、32a耦合的效果，被設定成例如0.7mm以下。在隔離管42的內部，在與隔離管42不接觸之狀態被插入電漿產生電極26的棒28。
電漿產生電極26、加熱器電極30、隔離片40以及隔離管42的材質係相同或是不同都可。作為材質，只要是具有導電性者，無特別地限定，列舉例如Mo、W、Nb、Mo化合物、W化合物或Nb化合物。其中，與陶瓷基體22之熱膨脹係數的差小者為佳。棒28及配線構件31a、32a之材質亦與此相同，但是具有耐氧化性之Ni等的材質為佳。
陶瓷軸24係與陶瓷基體22一樣，是AlN製之圓筒形構件。陶瓷軸24的上部端面係藉擴散接合或TCB(Thermal Compression Bonding)與陶瓷基體22之背面22b接合。TCB意指將金屬接合材料夾入接合對象的2個構件之間，並在加熱至金屬接合材料之固態線溫度以下之溫度的狀態對2個構件進行加壓接合之周知的方法。凸緣24a被設置於陶瓷軸24之下部開口的周圍。
陶瓷軸24的凸緣24a係與和接地G連接之導電金屬製的圓柱構件44連接。圓柱構件44的上面及底面具有與凸緣24a之外徑相等以上的直徑。插座29被埋設於圓柱構件44之上面的圓形孔，棒28的下端與插座29接合。是金屬之伸縮管的伸縮囊43被配置於圓柱構件44的上面之環形的孔，隔離管42的下端與伸縮囊43的上端接合。因此，棒28係經由插座29及圓柱構件44與接地G以電性連接，隔離管42係經由伸縮囊43及圓柱構件44與接地G以電性連接。
上部電源50係被固定於陶瓷基體22之與晶圓載置面22a相對向的上方位置(例如未圖示之室的天花板面)。此上部電源50係與RF電源52連接。因此，RF電流被供給至上部電源50。RF電流之頻率係例如是13MHz或27MHz。
其次，說明電漿產生裝置10之使用例。將電漿產生裝置10配置於未圖示之室內，並將晶圓W載置於晶圓載置面22a。然後，將RF電流供給至上部電源50。藉由依此方式，在由上部電源50與被埋設於陶瓷基體22之電漿產生電極26所構成的平行平板電極間產生電漿，利用該電漿對晶圓W實施CVD成膜或實施蝕刻。又，根據未圖示之熱電偶的檢測信號求得晶圓W之溫度，再將對構成加熱器電極30之第1及第2加熱器電極31、32所施加之電壓控制該溫度成為設定溫度(例如350℃或300℃)。
在電漿產生電極26的周邊，因藉在電漿產生電極26流動之RF電流所產生之RF磁場的時間變化而感應RF電場。隔離片40係防止此RF電場與構成加熱器電極30之第1 及第2加熱器電極31、32耦合。又，在電漿產生電極26之棒28的周邊，因藉在棒28流動之RF電流所產生之RF磁場的時間變化而感應RF電場。隔離管42係防止此RF電場與第1及第2加熱器電極31、32之配線構件31a、32a耦合。因此，可充分地防止RF雜訊之對包含第1及第2加熱器電極31、32以及其配線構件31a、32a之加熱器電路的影響。結果，可高精度地進行加熱器電極30之溫度控制。
其次，說明電漿產生裝置10的製造例。此處，說明晶圓支撐台20的製造例。此外，因為此製造例係應用周知之技術，所以僅概略地說明。
首先，在被調製成所需之規格的陶瓷粉末，將加熱器電極30(第1及第2加熱器電極31、32)、隔離片40以及電漿產生電極26埋設成大致平行且各自成為不接觸之狀態，再使用成形機對其進行加壓成形。接著，將所得之成形體搬入窯，並升温至既定溫度(~2000℃以下)，進行烘烤。藉此，得到在大致平行且各自成為不接觸之狀態埋設加熱器電極30、隔離片40以及電漿產生電極26的陶瓷基體22。窯係可使用熱壓爐、常壓爐等。藉由對所得之陶瓷基體22實施表面加工，將陶瓷基體22整形成既定尺寸。
另一方面，除了陶瓷基體22以外，另外準備陶瓷軸24。具體而言，使用陶瓷軸用之模具，以CIP(冷作各向等壓加壓)成形後，在常壓爐以既定溫度(~2000℃以下)烘烤所得之成形體。藉由對所得之陶瓷軸24實施表面加工，將陶瓷軸24整形成既定尺寸。
然後，將陶瓷軸24配置於陶瓷基體22的背面22b，再藉上述之擴散接合或TCB將兩者接合。藉此，陶瓷基體22與陶瓷軸24被接合而成為一體。對所得之一體品的表面實施最後加工，將一體品整形成既定尺寸。接著，從陶瓷基體22的背面22b設置柱坑孔，使電漿產生電極26露出，藉硬焊等將棒28與該露出之部分接合。關於隔離片40與隔離管42的接合或第1及第2加熱器電極31、32與其配線構件31a、32a的接合，亦與其一樣地藉硬焊等接合。然後，經由圓柱構件44將棒28及隔離管42與接地G連接，且經由低通濾波器33、34將一方之配線構件31a、32a與交流電源35、36連接，並將另一方之配線構件31a、32a與接地G連接，而得到晶圓支撐台20。
在以上所詳述之晶圓支撐台20，隔離片40防止在電漿產生電極26之周邊所產生的RF電場與第1及第2加熱器電極31、32耦合。又，隔離管42防止在棒28之周邊所產生的RF電場與第1及第2加熱器電極31、32之配線構件31a、32a耦合。因此，可充分地防止RF雜訊之對包含第1及第2加熱器電極31、32或其配線構件31a、32a之加熱器電路的影響。結果，可高精度地進行第1及第2加熱器電極31、32之溫度控制。
又，晶圓支撐台20係不僅包括隔離片40及隔離管42，還在第1及第2加熱器電極31、32之配線構件31a、32a的各個包括低通濾波器33、34。因此，可更加防止RF雜訊之對加熱器電路的影響。換言之，藉隔離片40及隔離管42 可防止低通濾波器33、34防止不了之RF雜訊。在RF電流之頻率為13MHz以上的情況，尤其27MHz以上的情況，這種效果變得顯著。
此外，本發明係絲毫地未被限定為上述的實施形態，當然只要屬於本發明的技術性範圍，能以各種的形態實施。
例如，在上述之實施形態，將上部電源50與RF電源52連接，並將電漿產生電極26的棒28與接地G連接，但是亦可作成如第2圖所示，將上部電源50與接地G連接，經由插座29將電漿產生電極26的棒28與RF電源52連接。第2圖中之符號係表示與上述之實施形態相同的構成元件。在此情況，插座29之周圍係以未圖示之絕緣膜所覆蓋，插座29係與圓柱構件44在電性上絕緣。在此情況，亦可得到與上述之實施形態一樣的效果。
在上述之實施形態，陶瓷基體22或陶瓷軸24的材質採用AlN，但是不特別限定為此。亦可採用例如氧化鋁或碳化矽、氮化矽等。
在上述之實施形態，藉由對電漿產生電極26施加電壓，可在晶圓載置面22a吸住晶圓W。又，亦可作成更將靜電電極埋設於陶瓷基體22，而從陶瓷基體22的背面22b向陶瓷軸24的內部(陶瓷基體22的外側)拉出靜電電極的配線構件。依此方式，亦可藉由對靜電電極施加電壓，而在晶圓載置面22a吸住晶圓W。此外，靜電電極之配線構件係配置於隔離管42的外部為佳。
在上述之實施形態，作為隔離片40及隔離管42， 採用導電性之網孔片及網孔管，但是不特別限定為此。亦可採用例如衝孔金屬之薄板或管。在此情況，衝孔金屬之孔的大小係被設計成可充分地防止RF雜訊的影響。或者，亦可採用金屬板之面狀構件或筒狀構件。依此方式，可更確實地防止RF雜訊的影響。
在上述之實施形態，不僅採用隔離片40及隔離管42，還採用低通濾波器33、34，但是只要是頻率約13MHz的RF電流，無隔離片40及隔離管42，藉低通濾波器33、34之設計，亦可在某程度上防止RF雜訊之對加熱器電路的影響。可是，如上述所示，若可將隔離片40及隔離管42裝入陶瓷基體22，可更確實地防止RF雜訊的影響。
在上述之實施形態，將低通濾波器33、34設置於配線構件31a、32a，但是在藉隔離片40及隔離管42可充分地防止RF雜訊之影響的情況，亦可省略低通濾波器33、34。
在上述之實施形態，作為加熱器電極30，舉例表示具有第1及第2加熱器電極31、32之2區加熱器，但是不特別限定為此。亦可是1區加熱器，亦可是被分割成3區以上的多區加熱器。
本專利申請係將於2017年1月30日所申請之日本專利申請第2017-013980號作為優先權主張的基礎，並藉引用將其內容的全部包含於本專利說明書。
【工業上的可應用性】
本發明係例如可利用於半導體製程。

Claims (5)

  1. 一種晶圓支撐台，在包括晶圓載置面之陶瓷基體，從接近該晶圓載置面之側，電漿產生電極、加熱器電極在按照此順序分開之狀態被埋設，該電漿產生電極之配線構件及該加熱器電極之配線構件從該陶瓷基體之與該晶圓載置面係相反側的面被拉出至該陶瓷基體之外部，其包括：隔離片，係在該電漿產生電極與該加熱器電極之間在與兩者不接觸之狀態被埋設於該陶瓷基體；及隔離管，係與該隔離片以電性連接，並從該陶瓷基體之與該晶圓載置面係相反側的面被延伸至該陶瓷基體的外部；該電漿產生電極之配線構件係在與該隔離管不接觸之狀態被插入該隔離管的內部；該加熱器電極之配線構件係在與該隔離管不接觸之狀態被配置於該隔離管的外部。
  2. 如申請專利範圍第1項之晶圓支撐台，其中該加熱器電極之配線構件係在該加熱器電極與外部電源之間包括低通濾波器。
  3. 如申請專利範圍第1或2項之晶圓支撐台，其中該隔離片係網孔、衝孔金屬或金屬板之面狀構件；該隔離管係網孔、衝孔金屬或金屬板之筒狀構件。
  4. 如申請專利範圍第1至3項中任一項之晶圓支撐台，其中該電漿產生電極係施加RF電源之電壓的電極或接地電極。
  5. 如申請專利範圍第1至4項中任一項之晶圓支撐台，其中流至該電漿產生電極之RF電流的頻率係13MHz以上。
TW107102935A 2017-01-30 2018-01-26 晶圓支撐台 TWI749161B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017013980A JP6615134B2 (ja) 2017-01-30 2017-01-30 ウエハ支持台
JP2017-013980 2017-01-30

Publications (2)

Publication Number Publication Date
TW201827642A true TW201827642A (zh) 2018-08-01
TWI749161B TWI749161B (zh) 2021-12-11

Family

ID=62980707

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107102935A TWI749161B (zh) 2017-01-30 2018-01-26 晶圓支撐台

Country Status (5)

Country Link
US (1) US10861680B2 (zh)
JP (1) JP6615134B2 (zh)
KR (1) KR102368339B1 (zh)
CN (1) CN108376635B (zh)
TW (1) TWI749161B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107431034A (zh) * 2015-03-11 2017-12-01 贝卡尔特公司 用于临时键合晶片的载体
JP6758143B2 (ja) * 2016-09-29 2020-09-23 日本特殊陶業株式会社 加熱装置
US11062887B2 (en) * 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
CN110265323B (zh) * 2019-05-31 2021-09-03 拓荆科技股份有限公司 具有接点阵列的晶圆加热座
CN114245936A (zh) * 2019-08-08 2022-03-25 日本碍子株式会社 半导体制造装置用构件
WO2021071659A1 (en) * 2019-10-07 2021-04-15 Applied Materials, Inc. Integrated electrode and ground plane for a substrate support
CN114051765B (zh) * 2019-12-04 2024-05-28 日本碍子株式会社 陶瓷加热器
US12020957B2 (en) * 2020-08-31 2024-06-25 Applied Materials, Inc. Heater assembly with process gap control for batch processing chambers
JP7372224B2 (ja) * 2020-10-16 2023-10-31 日本碍子株式会社 ウエハ載置台
CN115210860A (zh) * 2021-02-04 2022-10-18 日本碍子株式会社 半导体制造装置用构件及其制法
WO2022168368A1 (ja) * 2021-02-04 2022-08-11 日本碍子株式会社 半導体製造装置用部材及びその製法
WO2022264922A1 (ja) * 2021-06-15 2022-12-22 京セラ株式会社 プラズマ処理装置用部材
US12094748B2 (en) 2021-08-18 2024-09-17 Applied Materials, Inc. Bipolar esc with balanced RF impedance

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2656326B2 (ja) 1988-11-07 1997-09-24 国際電気株式会社 ドライプロセス装置における高周波印加電極の加熱装置
JPH10204645A (ja) 1997-01-17 1998-08-04 Hitachi Electron Eng Co Ltd 下部電極
JP4236329B2 (ja) * 1999-04-15 2009-03-11 日本碍子株式会社 プラズマ処理装置
KR100588774B1 (ko) 2001-11-26 2006-06-14 주성엔지니어링(주) 웨이퍼 서셉터
JP4129855B2 (ja) * 2001-12-13 2008-08-06 東京エレクトロン株式会社 プラズマ処理装置
KR100756095B1 (ko) 2003-05-02 2007-09-05 동경 엘렉트론 주식회사 처리가스도입기구 및 플라즈마처리장치
CN100350569C (zh) * 2003-05-02 2007-11-21 东京毅力科创株式会社 处理气体导入机构和等离子体处理装置
US7354288B2 (en) * 2005-06-03 2008-04-08 Applied Materials, Inc. Substrate support with clamping electrical connector
WO2010008827A2 (en) * 2008-06-24 2010-01-21 Applied Materials, Inc. Pedestal heater for low temperature pecvd application
DE102010060762B4 (de) * 2010-11-24 2019-05-23 Meyer Burger (Germany) Gmbh Plasmabearbeitungsvorrichtung
US8633648B2 (en) * 2011-06-28 2014-01-21 Recarbon, Inc. Gas conversion system
KR101658749B1 (ko) * 2014-03-27 2016-09-21 엔지케이 인슐레이터 엘티디 세라믹스 플레이트와 금속제 원통 부재의 접합 구조
CN104046965A (zh) * 2014-05-27 2014-09-17 中国电子科技集团公司第四十八研究所 一种辐射加热元件、辐射加热器及mocvd反应器
CN105887049B (zh) * 2016-04-21 2018-05-29 郑亮 一种低温纳米疏水真空放电沉积镀膜方法
WO2017184223A1 (en) * 2016-04-22 2017-10-26 Applied Materials, Inc. Substrate support pedestal having plasma confinement features
CN106119811B (zh) * 2016-08-30 2018-10-12 湖南玉丰真空科学技术有限公司 一种真空设备的基板加热台

Also Published As

Publication number Publication date
TWI749161B (zh) 2021-12-11
US10861680B2 (en) 2020-12-08
JP6615134B2 (ja) 2019-12-04
KR20200067241A (ko) 2020-06-12
KR102368339B1 (ko) 2022-03-02
JP2018123348A (ja) 2018-08-09
CN108376635B (zh) 2021-09-03
CN108376635A (zh) 2018-08-07
US20180218885A1 (en) 2018-08-02

Similar Documents

Publication Publication Date Title
TW201827642A (zh) 晶圓支撐台
TWI763790B (zh) 晶圓支撐台
US9984912B2 (en) Locally heated multi-zone substrate support
TWI684238B (zh) 載置台及基板處理裝置
JP5117146B2 (ja) 加熱装置
TWI459851B (zh) heating equipment
US11764039B2 (en) Wafer support
JP5896595B2 (ja) ２層ｒｆ構造のウエハ保持体
TW552664B (en) Electrostatic chuck with dielectric coating
TW201826324A (zh) 陶瓷加熱器
JP5992388B2 (ja) セラミックヒーター
US20230340668A1 (en) Wafer holder
TW201735215A (zh) 靜電卡盤機構以及半導體加工裝置
TW200536425A (en) Substrate heating device
JP2001274230A (ja) 半導体製造装置用ウェハ保持体
KR102094212B1 (ko) 세라믹스 부재
TWI755572B (zh) 晶圓載置台及其製法
WO2018159687A1 (ja) ウエハ加熱装置
JP2020126770A (ja) セラミックヒータ
TW201946206A (zh) 晶圓支撐台
JP2017174713A (ja) マルチゾーンに区分された加熱ヒータ
JP6973995B2 (ja) セラミックスヒータ
WO2020189286A1 (ja) セラミックヒータ
JP2003124085A (ja) 基板加熱構造体および基板処理装置
CN105097630A (zh) 承载装置以及等离子刻蚀设备