TWI755572B - 晶圓載置台及其製法 - Google Patents
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Abstract
一種晶圓載置台10,其在具有晶圓載置面12a之陶瓷基體12的內部,從靠近晶圓載置面12a那方,以與晶圓載置面12a平行的狀態被埋設第一電極21與第二電極22。晶圓載置台10具備使第一電極21與第二電極22導電的導通部30。導通部30於第一電極21與第二電極22之間,疊加複數片由與晶圓載置面12a平行之板狀金屬網物所構成的圓形元件32。
Description
本發明是關於一種晶圓載置台及其製法。
過去,用在處理晶圓的晶圓載置台為一般習知的裝置。晶圓載置台包括陶瓷加熱器、靜電圓盤、基座(內建有電漿產生用電極的裝置)等類型。例如,在專利文獻1中揭露了以下這種發明:作為此種晶圓載置台,於具有晶圓載置面的陶瓷基體的內部,從靠近晶圓載置面的那方,以與晶圓載置面平行的狀態埋設圓板狀第一電極以及外徑大於第一電極的環狀第二電極。第一電極與第二電極透過導通部導電。在專利文獻1中,如圖9所示,揭露了一種由鋸齒狀凹折之金屬網狀物所構成的導通部等設置。
[先前技術文獻]
[專利文獻]
[專利文獻1]特開2003-163259號公報
[發明所欲解決之課題]
然而,當對載置於晶圓載置面的晶圓施以電漿處理時,導通部有高頻波流過。此時,若採用圖9的導通部,第一電極與第二電極之間的導通路徑會因為鋸齒狀,變得比第一電極與第二電極之間的距離還長很多,導致高頻波流過時的阻抗變高。其結果為,導通部的發熱量變大,導通部的上方位置變得特別高溫,有均熱性惡化的問題產生。
本發明為解決此種課題的發明,主要目的為,在埋設有透過導通部使相互平行之第一電極及第二電極導電之導通部的晶圓載置台上,使晶圓的均熱性良好。
[用以解決課題之手段]
本發明之晶圓載置台,其在具有晶圓載置面之陶瓷基體的內部,從靠近上述晶圓載置面那方,以與上述晶圓載置面平行的狀態被埋設第一電極與第二電極,並具備使上述第一電極與上述第二電極導電的導通部,其特徵為,上述導通部於上述第一電極與上述第二電極之間疊加複數片與上述晶圓載置面平行的板狀金屬網狀元件。
在此種晶圓載置台上,導通部於第一電極與第二電極之間疊加複數片與晶圓載置面平行的板狀金屬網狀元件。此種導通部的導通路徑和第一電極與第二電極之間的距離幾乎相同,而且,金屬網狀元件彼此為多點接觸,所以,相較於鋸齒狀凹折的金屬網狀物,高頻波電流流過時的阻抗變低。於是,可防止導通部的上方位置特別高溫,使晶圓的均熱性良好。
此外,所謂「平行」,除了完全平行的情況外,也包含實質平行的情況(例如仍在公差範圍的情況等)。
在本發明之晶圓載置台上,在上述金屬網狀元件的網眼空間中,宜摻入上述陶瓷基體的材料。如此,有利於強度。
在本發明之晶圓載置台上,上述第一電極及上述第二電極作為靜電電極來使用,或者作為RF電極來使用,又或者作為靜電電極及RF電極兩者來使用。
在本發明之晶圓載置台上,可使上述第一電極為圓板電極,使上述第二電極為直徑大於上述第一電極且與上述第一電極為同心圓的圓板電極或環狀電極,上述第一電極及上述第二電極皆為圓板電極為佳。在第一電極為圓板電極而第二電極為環狀電極的情況下,當從晶圓載置面的上方來看第一電極時,存在第一電極與第二電極重疊的二重部分(設有導通部的部分)和不與第二電極重疊的一重部分,所以,會有在二重部分和一重部分對晶圓的影響有所不同的疑慮。相對於此,在第一及第二電極皆為圓板電極的情況下,當從晶圓載置面的上方來看第一電極時,整個第一電極與第二電極重疊,所以沒有此種疑慮。
在本發明之晶圓載置台上,上述陶瓷基體宜於上述晶圓載置面的外側具有低於上述晶圓載置面的環狀段差面,上述第一電極可設置成面向上述晶圓載置面,上述第二電極可至少一部分設置成面向上述環狀段差面。如此,可將環狀段差面利用為載置聚焦環的那面。
本發明之晶圓載置台之製法包含:
製程(a),挖鑿出用來將導通部從埋設有第一電極或其前驅體的陶瓷加壓成形體的其中一面配置到第一電極或其前驅體的孔;
製程(b),對上述孔內以與上述第一電極或其前驅體平行的狀態疊加複數片板狀金屬網狀元件,使最上面那截的上述金屬網狀元件到達上述孔的出口;
製程(c),在上述陶瓷加壓成形體的上述其中一面,以與上述第一電極平行且與最上面那截之上述金屬網狀元件連接的狀態,設置第二電極或其前驅體;製程(d),以覆蓋上述第二電極或其前驅體的狀態對上述陶瓷加壓成形體的上述其中一面敷上陶瓷粉末並加壓成形,藉此得到積層體;製程(e),熱壓燒成上述積層體。
此晶圓載置台之製法適合用來製造上述任一種晶圓載置台。在此種製法中,疊加複數片板狀金屬網狀元件以製作導通部。疊加有複數片金屬網狀元件的多層體具有收縮性。因此,熱壓燒成時,燒結並收縮陶瓷粉末的製程並不會被該多層體阻礙。又,第一電極與第二電極之間的距離容易控制。
在本發明之晶圓載置台之製法中,於製程(b),宜對孔內疊加複數片金屬網狀元件之後,再於該孔中放入陶瓷粉末,以陶瓷粉末埋住金屬網狀元件的網眼空間。如此,金屬網狀元件的網眼空間有陶瓷粉末放入,所以,相較於網眼空間為空洞的情況,難以在燒成時在陶瓷基體上產生裂痕。
此外,所謂第一電極的前驅體,是指會在燒成後變成第一電極的部位,例如,導電膏的印刷物等。第二電極的前驅體也與此相同。
以下將參照圖面來說明本發明的最佳實施型態。圖1係晶圓載置台10的垂直剖面圖(於通過陶瓷基體12之中心軸的面剖開時的剖面圖),圖2係晶圓載置台10的平面圖,圖3係圓形元件32的立體圖,圖4係導通部30的剖面圖。此外,在圖2中省略了聚焦環FR。
晶圓載置台10係採用電漿來處理晶圓W以進行CVD、蝕刻等技術的裝置,配置於半導體製程用且未圖示出的處理室。此晶圓載置台10於陶瓷基體12的內部具有第一電極21、第二電極22及導通部30。
陶瓷基體12為由以氮化鋁、碳化矽、氮化矽、氧化鋁等為代表的陶瓷材料所構成的圓板狀平板。陶瓷基體12具備圓形的晶圓載置面12a、位於此晶圓載置面12a的外側且比晶圓載置面12a低一截的聚焦環載置面12b及位於晶圓載置面12a的相反側的背面12c。在陶瓷基體12的內部,從靠近晶圓載置面12a的那方,以與晶圓載置面12a平行(也包含實質上平行的情況,在以下說明中皆同)的狀態埋設第一電極21與第二電極22。在陶瓷基體12的晶圓載置面12a、聚焦環載置面12b上,藉由浮刻加工形成未圖示出的複數個凹凸。在設置於晶圓載置面12a的凹部與載置於晶圓載置面12a的晶圓W之間、設置於聚焦環載置面12b的凹部與載置於聚焦環載置面12b的聚焦環FR之間,有熱傳導用的氣體(例如氦氣)從背面12c那側通過未圖示出的氣體供給路徑被供給。聚焦環FR以不干涉晶圓W的狀態沿著上端部的內周具有段差。
第一電極21為與陶瓷基體12為同心圓的圓板電極,以面對晶圓載置面12a的狀態被設置。第一電極21由以鉬、鎢或碳化鎢為主成分的金屬網狀物或金屬平板所構成。第一電極21在以靜電吸附載置於晶圓載置面12a的晶圓W時,被施加直流電壓。第一電極21連接至插入陶瓷基體12的背面12c且未圖示出的供電棒,透過此供電棒被施加直流電壓。
第二電極22為與外徑大於第一電極21的陶瓷基體12為同心圓的環狀電極,以面對聚焦環載置面12b的狀態被設置。第二電極22由與第一電極21相同材料的金屬網狀物或金屬平板所構成。第二電極22在以靜電吸附載置於聚焦環載置面12b的聚焦環FR時,被施加直流電壓。第二電極22透過第一電極21與導通部30來通電。因此,當對第一電極21施加直流電壓時,隨之而來的是,第二電極22也被施加直流電壓。
導通部30設置於第一電極21與第二電極22之間,疊加了複數片與晶圓載置面12a平行的圓形元件32(參照圖3)。複數個(在此為8個)導通部30如圖2所示,沿著晶圓載置台10的圓周方向以等間隔被設置。圓形元件32以與第一電極21相同材料的金屬網狀物所構成。金屬網狀物的線徑宜為0.1~0.5mm,每1英吋的網眼的數目宜為20~50個。複數片圓形元件32的面重合。因此,相互連接的2個圓形元件32具有多個點接觸部30a(參照圖4)。又,在導通部30於第一電極21與第二電極22之間形成的導通路徑和第一電極21與第二電極22之間的距離相同。
接著,使用圖5說明晶圓載置台10的製造例。圖5係用來表示晶圓載置台10之製程的說明圖。
首先,使用平均粒徑為數µm~數10µm的陶瓷粉末來製作內建有第一電極21的圓板狀陶瓷加壓成形體40(參照圖5(a))。此時,第一電極21與陶瓷加壓成形體40的上面及下面平行。
接著,於陶瓷加壓成形體40的上面之中設置導通部30的位置,挖鑿出到達第一電極21的孔42(參照圖5(b))。
接著,在孔42的內部,以與第一電極21平行的狀態疊加置入複數片圓形元件32以構成多層體34,然後,進一步將陶瓷粉末填充於圓形元件32的網眼空間中(參照圖5(c))。圓形元件32為金屬網狀物,但線徑及每1英吋的網眼的數目在上述的數值範圍內。因此,疊加有複數片圓形元件32的多層體34在以熱壓技術燒成收縮後,比較近似塊狀體(實心的圓柱體)。因此,填充於圓形元件32的網眼空間的陶瓷粉末較為少量。
接著,在陶瓷加壓成形體40的上面,以與第一電極21平行的狀態載置環狀的第二電極22(參照圖5(d))。此時,第二電極22與多層體34之中的最上面那截的圓形元件32接觸。
接著,將載置第二電極22的陶瓷加壓成形體40放入模具,以覆蓋第二電極22的狀態在陶瓷加壓成形體40的上面敷上陶瓷粉末並加壓成形,藉此得到積層體44(參照圖5(e))。
接著,熱壓燒成積層體44(參照圖5(f))。藉此,積層體44所含有的粉末受到燒結,變成圓板狀的陶瓷基體46。又,多層體34變成導通部30。如圖6所示,疊加有複數片圓形元件32的多層體34在熱壓燒成時對著面沿著垂直方向收縮,所以,不妨礙陶瓷粉末的燒結及收縮。之後,研削圓板狀的陶瓷基體46的下面的外周部分以形成段差,得到具有晶圓載置面12a與聚焦環載置面12b的陶瓷基體12。
接著,使用圖7說明晶圓載置台10的使用例。圖7係晶圓載置台10的使用例的說明圖。
晶圓載置台10在將金屬製的冷卻板50安裝於陶瓷基體12的背面12c之後,設置於處理室80內。在處理室80中與晶圓載置台10相向的位置,設置有蓮蓬頭90。
在晶圓載置台10的晶圓載置面12a載置圓板狀的晶圓W,在聚焦環載置面12b載置聚焦環FR,透過未圖示出的供電棒對第一電極21施加直流電壓。此時,透過導通部30與第一電極21通電的第二電極22也被施加直流電壓。因此,晶圓W以靜電被吸附於晶圓載置面12a,聚焦環FR以靜電被吸附於聚焦環載置面12b。晶圓W的溫度、聚焦環RF的溫度可藉由供給至未圖示出的冷媒通路的冷媒的溫度來控制,該冷媒通路為安裝於晶圓載置台10背面的冷卻板50的冷媒通路。
在此狀態下,處理室80的內部被設定為既定的真空環境氣體(或減壓環境氣體),一邊從蓮蓬頭90供給處理氣體,一邊對冷卻板50與蓮蓬頭90之間供給高頻波電力以產生電漿。然後,利用該電漿對晶圓W施以CVD成膜技術或蝕刻技術。伴隨著晶圓W的電漿處理,也會磨耗掉聚焦環FR,但聚焦環FR的厚度頗厚,所以,聚焦環FR的更換是在處理複數片晶圓W之後才進行。
在以上所說明的晶圓載置台10上,當為晶圓W施以電漿處理時,導通部30有高頻波電流流過。此導通部30於第一電極21與第二電極22之間疊加複數片由與晶圓載置面12a平行的板狀金屬網狀物所構成的圓形元件32。此種導通部30的導通路徑和第一電極21與第二電極22之間的距離近乎相同,而且,金屬網狀物以多點來接觸,所以,例如相較於圖9的鋸齒狀凹折的金屬網狀物,高頻波電流流過時的阻抗較低。於是,可防止導通部30的上方位置特別高溫,使晶圓W的均熱性良好。
又,在圓形元件32的網眼空間中,摻入陶瓷基體12的材料,所以,有利於強度。
再者,在圖5的製程中,疊加複數片圓形元件32來製作導通部30,所以,在熱壓燒成時並不會妨礙陶瓷粉末的燒結與收縮。又,第一電極21與第二電極22之間的距離可輕易控制。將晶圓W吸附於晶圓載置面12a的吸附力視陶瓷基體12中第一電極21與晶圓載置面12a之間的層(第一介電質層)的厚度而定,將聚焦環FR吸附於聚焦環載置面12b的吸附力視陶瓷基體12中第二電極22與聚焦環載置面12b之間的層(第二介電質體)的厚度而定。第一介電質體的厚度與第二介電質體的厚度多為彼此不同的設計值,但藉由採用圖5的製程,可使第一介電質體的厚度與第二介電質體的厚度輕易配合設計值。
再者,熱壓燒成前,孔42內的圓形元件32的網眼空間摻有陶瓷粉末,所以,相較於網眼空間為空洞的情況,燒成後的陶瓷基體12難以產生裂痕。
此外,本發明不受上述任何一種實施型態限定,只要屬於本發明之技術範圍,本發明理所當然得以實施各種型態。
例如,在上述的實施型態中,使第二電極22為環狀電極,但如圖8的晶圓載置台110所示,第二電極122亦可為外徑大於第一電極21的圓板電極。在圖8中,與上述實施型態相同的構成元素,附加相同符號。在第一電極21為圓板電極而第二電極22為環狀電極的情況下,當從晶圓載置面12a的上方看第一電極21時,存在第一電極21中與第二電極22重疊的二重部分(設有導通部30的部分)及不與第二電極22重疊的一重部分,所以,會有在二重部分和一重部分對晶圓W產生的影響有所不同的疑慮。相對於此,如圖8所示,在第一及第二電極21, 122皆為圓板電極的情況下,當從晶圓載置面11a的上方來看第一電極21時,整個第一電極21與第二電極122重疊,所以,沒有此種疑慮。
在上述的實施型態中,宜於陶瓷基體12埋設電阻發熱體。此時,宜分開獨立設置對載置於晶圓載置面12a之晶圓W加熱的電阻發熱體及對載置於聚焦環載置面12b之聚焦環FR加熱的電阻發熱體。又,宜將對晶圓W加熱的區域劃分為多區域並在每個區域獨立設置電阻發熱體。
在上述的實施型態中,例示了將第一及第二電極21, 22作為靜電電極來使用的情況,但也可將第一及第二電極21, 22作為靜電電極來使用並同時作為RF電極來使用。在此情況下,可參照圖7,對第一及第二電極21, 22與蓮蓬頭90之間供給高頻波電力來產生電漿。此外,也可不將第一及第二電極21, 22作為靜電電極而僅作為RF電極來使用。
在上述的實施型態中,說明了第一電極21透過插入陶瓷基體12的背面12c且未圖示出的供電棒被施加直流電壓的情況,但也可不要這樣,而使第二電極22透過插入陶瓷基體12的背面12c且未圖示出的供電棒被施加直流電壓。在此情況下,第一電極21透過第二電極22及導通部30導電,所以,當第二電極22被施加直流電壓時,伴隨而來的是,第一電極21也被施加直流電壓。
本申請將2017年10月24日所申請的美國準申請第62/576, 240號作為優先權主張的基礎,藉由引用,該申請的全部內容被本說明書包含在內。
本發明可應用於例如製造半導體的技術。
10、110‧‧‧晶圓載置台
12‧‧‧陶瓷基體
12a‧‧‧晶圓載置面
12b‧‧‧聚焦環載置面
12c‧‧‧背面
21‧‧‧第一電極
22、122‧‧‧第二電極
30‧‧‧導通部
30a‧‧‧點接觸部
32‧‧‧圓形元件
34‧‧‧多層體
40‧‧‧陶瓷加壓成形體
42‧‧‧孔
44‧‧‧積層體
46‧‧‧陶瓷基體
50‧‧‧冷卻板
80‧‧‧處理室
90‧‧‧蓮蓬頭
〔圖1〕係晶圓載置台10的垂直剖面圖。
〔圖2〕係晶圓載置台10的平面圖。
〔圖3〕係圓形元件32的立體圖。
〔圖4〕係導通部30的剖面圖。
〔圖5〕係晶圓載置台10的製程圖。
〔圖6〕係複數片疊加在一起的圓形元件32的熱壓燒成前後的剖面圖。
[圖7]係用來表示晶圓載置台10之使用例的說明圖。
[圖8]係晶圓載置台110的垂直剖面圖。
[圖9]係由鋸齒狀凹折之金屬網狀物所構成的導通部的立體圖。
10‧‧‧晶圓載置台
12‧‧‧陶瓷基體
12a‧‧‧晶圓載置面
12b‧‧‧聚焦環載置面
12c‧‧‧背面
21‧‧‧第一電極
22‧‧‧第二電極
30‧‧‧導通部
32‧‧‧圓形元件
W‧‧‧晶圓
FR‧‧‧聚焦環
Claims (9)
- 一種晶圓載置台,其在具有晶圓載置面之陶瓷基體的內部,從靠近上述晶圓載置面那方,以與上述晶圓載置面平行的狀態被埋設第一電極與第二電極,並具備使上述第一電極與上述第二電極導電的導通部,其特徵為,上述導通部於上述第一電極與上述第二電極之間疊加複數片與上述晶圓載置面平行的板狀金屬網狀元件。
- 如申請專利範圍第1項之晶圓載置台,其中,在上述金屬網狀元件的網眼空間中,摻入上述陶瓷基體的材料。
- 如申請專利範圍第1或2項之晶圓載置台,其中,上述第一電極及上述第二電極作為靜電電極來使用,或者作為RF電極來使用,又或者作為靜電電極及RF電極兩者來使用。
- 如申請專利範圍第1或2項之晶圓載置台,其中,上述第一電極為圓板電極,上述第二電極為直徑大於上述第一電極且與上述第一電極為同心圓的圓板電極或環狀電極。
- 如申請專利範圍第3項之晶圓載置台,其中,上述第一電極為圓板電極,上述第二電極為直徑大於上述第一電極且與上述第一電極為同心圓的圓板電極或環狀電極。
- 如申請專利範圍第1或2項之晶圓載置台,其中,上述陶瓷基體於上述晶圓載置面的外側具有低於上述晶圓載置面的環狀段差面,上述第一電極設置成面向上述晶圓載置面,上述第二電極設置成面向上述環狀段差面。
- 如申請專利範圍第3項之晶圓載置台,其中,上述陶瓷基體於上述晶圓載置面的外側具有低於上述晶圓載置面的環狀段差面,上述第一電極設 置成面向上述晶圓載置面,上述第二電極設置成面向上述環狀段差面。
- 如申請專利範圍第4項之晶圓載置台,其中,上述陶瓷基體於上述晶圓載置面的外側具有低於上述晶圓載置面的環狀段差面,上述第一電極設置成面向上述晶圓載置面,上述第二電極設置成面向上述環狀段差面。
- 一種晶圓載置台之製法,包含:製程(a),挖鑿出用來將導通部從埋設有第一電極或其前驅體的陶瓷加壓成形體的其中一面配置到第一電極或其前驅體的孔;製程(b),對上述孔內以與上述第一電極或其前驅體平行的狀態疊加複數片板狀金屬網狀元件,使最上面那截的上述金屬網狀元件到達上述孔的出口;製程(c),在上述陶瓷加壓成形體的上述其中一面,以與上述第一電極平行且與最上面那截之上述金屬網狀元件連接的狀態,設置第二電極或其前驅體;製程(d),以覆蓋上述第二電極或其前驅體的狀態對上述陶瓷加壓成形體的上述其中一面敷上陶瓷粉末並加壓成形,藉此得到積層體;製程(e),熱壓燒成上述積層體。
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JP (1) | JP6530878B1 (zh) |
KR (1) | KR102340580B1 (zh) |
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KR102107985B1 (ko) | 2019-06-05 | 2020-05-07 | 주식회사 케이에스엠컴포넌트 | 플라즈마 처리 장치용 세라믹 구조체 및 그의 제조방법 |
CN115552589A (zh) * | 2020-06-29 | 2022-12-30 | 住友大阪水泥股份有限公司 | 静电吸盘装置 |
JP7414747B2 (ja) * | 2021-01-20 | 2024-01-16 | 日本碍子株式会社 | ウエハ載置台及びその製造方法 |
JP7364609B2 (ja) * | 2021-02-10 | 2023-10-18 | 日本碍子株式会社 | セラミックヒータ |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002231798A (ja) * | 2001-01-31 | 2002-08-16 | Kyocera Corp | ウエハ支持部材及びその製造方法 |
TW201016078A (en) * | 2008-06-23 | 2010-04-16 | Applied Materials Inc | Cathode with inner and outer electrodes at different heights |
TW201642345A (zh) * | 2015-01-20 | 2016-12-01 | Ngk Insulators Ltd | 軸端部安裝構造 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06176624A (ja) * | 1992-12-10 | 1994-06-24 | Shin Etsu Polymer Co Ltd | 接着性異方導電シート及びこれを用いた電気回路部材の接続方法 |
JPH06283595A (ja) * | 1993-03-30 | 1994-10-07 | Sony Corp | 静電吸着ステージおよびその使用方法 |
JPH09213455A (ja) * | 1996-02-05 | 1997-08-15 | Kyocera Corp | ウエハ保持装置の給電構造 |
US5847929A (en) | 1996-06-28 | 1998-12-08 | International Business Machines Corporation | Attaching heat sinks directly to flip chips and ceramic chip carriers |
JPH10321989A (ja) * | 1997-05-14 | 1998-12-04 | Katsuya Hiroshige | 導電パターンを形成した導電シート |
JP4164255B2 (ja) | 2001-11-27 | 2008-10-15 | 太平洋セメント株式会社 | 内部電極を有するセラミック部品の製造方法および内部電極を有するセラミック部品 |
KR100924262B1 (ko) * | 2003-03-19 | 2009-10-30 | 주식회사 코미코 | 메쉬 전극을 갖는 세라믹 정전척 및 그 제조 방법 |
JP3154930U (ja) * | 2009-08-19 | 2009-10-29 | 日本碍子株式会社 | 電極内蔵セラミックス部品 |
JP6208972B2 (ja) * | 2013-04-23 | 2017-10-04 | 日本特殊陶業株式会社 | 電極内蔵セラミックス焼結体およびその製造方法 |
US9673025B2 (en) * | 2015-07-27 | 2017-06-06 | Lam Research Corporation | Electrostatic chuck including embedded faraday cage for RF delivery and associated methods for operation, monitoring, and control |
JP6374417B2 (ja) | 2016-01-27 | 2018-08-15 | 日本特殊陶業株式会社 | 窒化アルミニウム基板、半導体製造用部品、cvdヒータ、及び窒化アルミニウム基板の製造方法 |
JP6858656B2 (ja) * | 2017-06-26 | 2021-04-14 | 東京エレクトロン株式会社 | 給電部材及び基板処理装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002231798A (ja) * | 2001-01-31 | 2002-08-16 | Kyocera Corp | ウエハ支持部材及びその製造方法 |
TW201016078A (en) * | 2008-06-23 | 2010-04-16 | Applied Materials Inc | Cathode with inner and outer electrodes at different heights |
TW201642345A (zh) * | 2015-01-20 | 2016-12-01 | Ngk Insulators Ltd | 軸端部安裝構造 |
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JP6530878B1 (ja) | 2019-06-12 |
US20200219755A1 (en) | 2020-07-09 |
US11398401B2 (en) | 2022-07-26 |
CN111095521A (zh) | 2020-05-01 |
WO2019082821A1 (ja) | 2019-05-02 |
TW201923952A (zh) | 2019-06-16 |
CN111095521B (zh) | 2023-03-28 |
KR20200029038A (ko) | 2020-03-17 |
KR102340580B1 (ko) | 2021-12-20 |
JPWO2019082821A1 (ja) | 2019-11-14 |
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