JP7372224B2 - ウエハ載置台 - Google Patents
ウエハ載置台 Download PDFInfo
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- JP7372224B2 JP7372224B2 JP2020174774A JP2020174774A JP7372224B2 JP 7372224 B2 JP7372224 B2 JP 7372224B2 JP 2020174774 A JP2020174774 A JP 2020174774A JP 2020174774 A JP2020174774 A JP 2020174774A JP 7372224 B2 JP7372224 B2 JP 7372224B2
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- power supply
- terminal
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- side mounting
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- 239000000919 ceramic Substances 0.000 claims description 121
- 229910052751 metal Inorganic materials 0.000 claims description 82
- 239000002184 metal Substances 0.000 claims description 82
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 39
- 238000010438 heat treatment Methods 0.000 description 17
- 238000003780 insertion Methods 0.000 description 17
- 230000037431 insertion Effects 0.000 description 17
- 238000003825 pressing Methods 0.000 description 14
- 238000009434 installation Methods 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 11
- 238000007254 oxidation reaction Methods 0.000 description 11
- 238000005304 joining Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000005219 brazing Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/06—Heater elements structurally combined with coupling elements or holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/03—Electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/035—Electrical circuits used in resistive heating apparatus
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
ウエハ載置面を有するセラミックプレートと、
前記セラミックプレートに埋設された電極と、
前記セラミックプレートの前記ウエハ載置面とは反対側の面に設けられた中空のセラミックシャフトと、
前記セラミックシャフト内に配置され、前記電極の端子に接続され、電源からの電力を供給する給電部材と、
前記セラミックプレートのうち前記セラミックシャフトに囲まれた領域に、前記電極の端子に対応して設けられ、前記給電部材を取り付けるプレート側取付位置と、
前記セラミックシャフトの自由端側に、前記プレート側取付位置に対応し、平面視したときに前記プレート側取付位置とずれるように設けられ、前記給電部材を取り付ける電源側取付位置と、
を備え、
前記給電部材は、前記給電部材を前記電源側取付位置から前記プレート側取付位置へ強制的に方向変換させる方向変換部を有している、
ものである。
Claims (7)
- ウエハ載置面を有するセラミックプレートと、
前記セラミックプレートに埋設された電極と、
前記セラミックプレートの前記ウエハ載置面とは反対側の面に設けられた中空のセラミックシャフトと、
前記セラミックシャフト内に配置され、前記電極の端子に接続され、電源からの電力を供給する給電部材と、
前記セラミックプレートのうち前記セラミックシャフトに囲まれた領域に、前記電極の端子に対応して設けられ、前記給電部材を取り付けるプレート側取付位置と、
前記セラミックシャフトの自由端側に、前記プレート側取付位置に対応し、平面視したときに前記プレート側取付位置とずれるように設けられ、前記給電部材を取り付ける電源側取付位置と、
を備え、
前記給電部材は、前記給電部材を前記電源側取付位置から前記プレート側取付位置へ強制的に方向変換させる方向変換部を有し、
前記給電部材は、前記電極の端子に接合される金属部品と、前記金属部品に接合され前記金属部品から前記電源側取付位置に向かって延びるケーブルとを備え、前記金属部品が前記方向変換部を兼ねており、
前記金属部品は、前記セラミックプレートから離れた位置にフランジを有する、
ウエハ載置台。 - 前記電極は、ヒータ電極を含む複数の電極であり、
前記給電部材は、複数の前記電極のそれぞれの端子に接続するように複数設けられ、
前記プレート側取付位置は、前記領域に前記複数の電極のそれぞれの端子に対応して複数設けられ、
前記電源側取付位置は、複数の前記プレート側取付位置に対応して複数設けられ、複数の前記電源側取付位置のうちの少なくとも1つは、平面視したときに対応する前記プレート側取付位置とずれており、
前記方向変換部は、複数の前記給電部材のうちずれている前記電源側取付位置と前記プレート側取付位置とに取り付けられる前記給電部材に備えられている、
請求項1に記載のウエハ載置台。 - 複数の前記電源側取付位置は、すべて、平面視したときに対応する前記プレート側取付位置とずれている、
請求項2に記載のウエハ載置台。 - 請求項1~3のいずれか1項に記載のウエハ載置台であって、
前記プレート側取付位置に前記セラミックシャフトの軸方向に沿って設けられ、前記電極の端子を露出させる端子穴
を備え、
前記金属部品は、前記セラミックシャフトの軸方向に沿って形成された本体部を有し、前記本体部は、前記端子穴に挿入されて前記電極の端子に接合されている、
ウエハ載置台。 - 前記金属部品は、
前記プレート側取付位置から前記セラミックシャフトの軸方向に沿って形成された本体部と、
前記本体部に一体化され、前記電源側取付位置から前記セラミックシャフトの軸方向に沿って延びる前記ケーブルを強制的に斜めに曲げた姿勢で保持するケーブル保持部と、
を備える、請求項1~4のいずれか1項に記載のウエハ載置台。 - 前記金属部品は、
前記プレート側取付位置から前記セラミックシャフトの軸方向に沿って形成された本体部と、
前記本体部から前記セラミックシャフトの軸方向と直交する方向にずれた状態で前記本体部に一体化され、前記電源側取付位置から前記セラミックシャフトの軸方向に沿って延びる前記ケーブルをそのままの姿勢で保持するケーブル保持部と、
を備える、請求項1~4のいずれか1項に記載のウエハ載置台。 - 前記給電部材は、前記電極の端子にろう接されている、
請求項1~6のいずれか1項に記載のウエハ載置台。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020174774A JP7372224B2 (ja) | 2020-10-16 | 2020-10-16 | ウエハ載置台 |
US17/305,170 US12108498B2 (en) | 2020-10-16 | 2021-07-01 | Wafer placement table |
KR1020210089423A KR102626753B1 (ko) | 2020-10-16 | 2021-07-08 | 웨이퍼 적재대 |
TW110125593A TWI773433B (zh) | 2020-10-16 | 2021-07-13 | 晶圓載置台 |
CN202111203612.7A CN114375074B (zh) | 2020-10-16 | 2021-10-15 | 晶片载置台 |
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JP2020174774A JP7372224B2 (ja) | 2020-10-16 | 2020-10-16 | ウエハ載置台 |
Publications (2)
Publication Number | Publication Date |
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JP2022065942A JP2022065942A (ja) | 2022-04-28 |
JP7372224B2 true JP7372224B2 (ja) | 2023-10-31 |
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US (1) | US12108498B2 (ja) |
JP (1) | JP7372224B2 (ja) |
KR (1) | KR102626753B1 (ja) |
CN (1) | CN114375074B (ja) |
TW (1) | TWI773433B (ja) |
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JP2023180719A (ja) * | 2022-06-10 | 2023-12-21 | 日本碍子株式会社 | ウエハ載置台 |
Citations (5)
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JP2001210705A (ja) | 2000-01-28 | 2001-08-03 | Toshiba Corp | 静電チャック、処理装置および半導体装置の製造方法 |
JP2001326181A (ja) | 2000-05-12 | 2001-11-22 | Nhk Spring Co Ltd | 加熱装置 |
JP2003133195A (ja) | 2001-10-24 | 2003-05-09 | Ngk Insulators Ltd | 加熱装置 |
JP2009182139A (ja) | 2008-01-30 | 2009-08-13 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
WO2018159189A1 (ja) | 2017-02-28 | 2018-09-07 | 日本発條株式会社 | 基板支持ユニット、および基板支持ユニットを有する成膜装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US1485667A (en) * | 1923-01-08 | 1924-03-04 | Coldwell John Robson Harding | Electric heater |
US20080041842A1 (en) * | 2005-09-07 | 2008-02-21 | United Technologies Corporation | Connector for heater |
JP5245268B2 (ja) * | 2006-06-16 | 2013-07-24 | 東京エレクトロン株式会社 | 載置台構造及び熱処理装置 |
US9275887B2 (en) * | 2006-07-20 | 2016-03-01 | Applied Materials, Inc. | Substrate processing with rapid temperature gradient control |
JP4853432B2 (ja) * | 2007-09-05 | 2012-01-11 | 東京エレクトロン株式会社 | 載置台構造及び処理装置 |
JP6312451B2 (ja) * | 2014-01-29 | 2018-04-18 | 東京エレクトロン株式会社 | 給電部カバー構造及び半導体製造装置 |
JP6615134B2 (ja) * | 2017-01-30 | 2019-12-04 | 日本碍子株式会社 | ウエハ支持台 |
KR102328766B1 (ko) * | 2018-11-19 | 2021-11-18 | 니뽄 도쿠슈 도교 가부시키가이샤 | 유지 장치 및 유지 장치의 제조 방법 |
KR102432592B1 (ko) * | 2018-12-20 | 2022-08-18 | 엔지케이 인슐레이터 엘티디 | 세라믹 히터 |
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JP2001210705A (ja) | 2000-01-28 | 2001-08-03 | Toshiba Corp | 静電チャック、処理装置および半導体装置の製造方法 |
JP2001326181A (ja) | 2000-05-12 | 2001-11-22 | Nhk Spring Co Ltd | 加熱装置 |
JP2003133195A (ja) | 2001-10-24 | 2003-05-09 | Ngk Insulators Ltd | 加熱装置 |
JP2009182139A (ja) | 2008-01-30 | 2009-08-13 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
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US20220124875A1 (en) | 2022-04-21 |
TWI773433B (zh) | 2022-08-01 |
CN114375074B (zh) | 2024-10-11 |
US12108498B2 (en) | 2024-10-01 |
KR102626753B1 (ko) | 2024-01-19 |
TW202218035A (zh) | 2022-05-01 |
CN114375074A (zh) | 2022-04-19 |
JP2022065942A (ja) | 2022-04-28 |
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