JP7430617B2 - ウエハ載置台 - Google Patents
ウエハ載置台 Download PDFInfo
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- JP7430617B2 JP7430617B2 JP2020174775A JP2020174775A JP7430617B2 JP 7430617 B2 JP7430617 B2 JP 7430617B2 JP 2020174775 A JP2020174775 A JP 2020174775A JP 2020174775 A JP2020174775 A JP 2020174775A JP 7430617 B2 JP7430617 B2 JP 7430617B2
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- 239000000919 ceramic Substances 0.000 claims description 139
- 235000012431 wafers Nutrition 0.000 description 43
- 238000006243 chemical reaction Methods 0.000 description 33
- 238000010438 heat treatment Methods 0.000 description 17
- 238000009434 installation Methods 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 238000005219 brazing Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/03—Electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/06—Heater elements structurally combined with coupling elements or holders
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Resistance Heating (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
ウエハ載置面を有するセラミックプレートと、
前記セラミックプレートに埋設された電極と、
前記セラミックプレートの前記ウエハ載置面とは反対側の面に設けられた中空のセラミックシャフトと、
前記セラミックシャフト内に配置され、前記電極の端子に接続され、電源からの電力を供給する給電部材と、
前記セラミックプレートのうち前記セラミックシャフトに囲まれた領域に、前記電極の端子に対応して設けられ、前記給電部材を取り付けるプレート側取付位置と、
前記セラミックシャフトの自由端側に、前記プレート側取付位置に対応し、平面視したときに前記プレート側取付位置とずれるように設けられ、前記給電部材を取り付ける電源側取付位置と、
前記セラミックシャフト内に設けられ、前記給電部材を前記電源側取付位置から前記プレート側取付位置へ強制的に方向変換させた姿勢で保持する方向変換部材と、
を備えたものである。
Claims (9)
- ウエハ載置面を有するセラミックプレートと、
前記セラミックプレートに埋設された電極と、
前記セラミックプレートの前記ウエハ載置面とは反対側の面に設けられた中空のセラミックシャフトと、
前記セラミックシャフト内に配置され、前記電極の端子に接続され、電源からの電力を供給する給電部材と、
前記セラミックプレートのうち前記セラミックシャフトに囲まれた領域に、前記電極の端子に対応して設けられ、前記給電部材を取り付けるプレート側取付位置と、
前記セラミックシャフトの自由端側に、前記プレート側取付位置に対応し、平面視したときに前記プレート側取付位置とずれるように設けられ、前記給電部材を取り付ける電源側取付位置と、
前記セラミックシャフト内に設けられ、前記給電部材を前記電源側取付位置から前記プレート側取付位置へ強制的に方向変換させた姿勢で保持する方向変換部材と、
を備え、
前記方向変換部材は、
前記セラミックプレート側に設けられ、前記プレート側取付位置に対向する位置から前記セラミックシャフトの軸方向と平行な方向に延びるプレート側穴部と、
前記プレート側穴部から前記電源側取付位置に対向する位置へ斜めに延びる斜め穴部と、
を有する、
ウエハ載置台。 - 前記電極は、ヒータ電極を含む複数の電極であり、
前記給電部材は、複数の前記電極のそれぞれの端子に接続するように複数設けられ、
前記プレート側取付位置は、前記領域に前記複数の電極のそれぞれの端子に対応して複数設けられ、
前記電源側取付位置は、複数の前記プレート側取付位置に対応して複数設けられ、複数
の前記電源側取付位置のうちの少なくとも1つは、平面視したときに対応する前記プレート側取付位置とずれており、
前記方向変換部材は、複数の前記給電部材のうちずれている前記電源側取付位置と前記プレート側取付位置とに取り付けられる前記給電部材を、前記電源側取付位置から前記プレート側取付位置へ強制的に方向変換させた姿勢で保持する、
請求項1に記載のウエハ載置台。 - 複数の前記電源側取付位置は、すべて、平面視したときに対応する前記プレート側取付位置とずれている、
請求項2に記載のウエハ載置台。 - 前記給電部材は、前記セラミックプレート側にフランジを有している、
請求項2又は3に記載のウエハ載置台。 - 前記方向変換部材は、
前記電源側に設けられ、前記電源側取付位置に対向する位置から前記セラミックシャフトの軸方向と平行な方向に延びる電源側穴部
を有し、
前記斜め穴部は、前記プレート側穴部と前記電源側穴部との間に設けられ、前記プレート側穴部と前記電源側穴部とを斜めに連結する、
請求項1~4のいずれか1項に記載のウエハ載置台。 - 前記方向変換部材は、前記ウエハ載置面と平行な1つの面で前記斜め穴部を切断した2つの部品で構成されている、
請求項5に記載のウエハ載置台。 - ウエハ載置面を有するセラミックプレートと、
前記セラミックプレートに埋設された電極と、
前記セラミックプレートの前記ウエハ載置面とは反対側の面に設けられた中空のセラミックシャフトと、
前記セラミックシャフト内に配置され、前記電極の端子に接続され、電源からの電力を供給する給電部材と、
前記セラミックプレートのうち前記セラミックシャフトに囲まれた領域に、前記電極の端子に対応して設けられ、前記給電部材を取り付けるプレート側取付位置と、
前記セラミックシャフトの自由端側に、前記プレート側取付位置に対応し、平面視したときに前記プレート側取付位置とずれるように設けられ、前記給電部材を取り付ける電源側取付位置と、
前記セラミックシャフト内に設けられ、前記給電部材を前記電源側取付位置から前記プレート側取付位置へ強制的に方向変換させた姿勢で保持する方向変換部材と、
を備え、
前記方向変換部材は、
前記セラミックプレート側に設けられ、前記プレート側取付位置に対向する位置から前記セラミックシャフトの軸方向と平行な方向に延びるプレート側穴部と、
前記電源側に設けられ、前記電源側取付位置に対向する位置から前記セラミックシャフトの軸方向と平行な方向に延びる電源側穴部と、
前記プレート側穴部と前記電源側穴部との間に設けられた空間部と、
を有し、
前記給電部材は、前記空間部において強制的に方向転換される、
ウエハ載置台。 - 前記方向変換部材は、前記プレート側穴部を備えた第1部品と、前記電源側穴部を備え
た第2部品と、前記空間部を形成する第3部品とで構成されている、
請求項7に記載のウエハ載置台。 - 前記給電部材は、前記電極の端子にろう接されている、
請求項1~8のいずれか1項に記載のウエハ載置台。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020174775A JP7430617B2 (ja) | 2020-10-16 | 2020-10-16 | ウエハ載置台 |
US17/305,173 US20220124874A1 (en) | 2020-10-16 | 2021-07-01 | Wafer placement table |
TW110126918A TWI774482B (zh) | 2020-10-16 | 2021-07-22 | 晶圓載置台 |
KR1020210124797A KR102626207B1 (ko) | 2020-10-16 | 2021-09-17 | 웨이퍼 적재대 |
CN202111198426.9A CN114388400A (zh) | 2020-10-16 | 2021-10-14 | 晶片载置台 |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001210705A (ja) | 2000-01-28 | 2001-08-03 | Toshiba Corp | 静電チャック、処理装置および半導体装置の製造方法 |
JP2001326181A (ja) | 2000-05-12 | 2001-11-22 | Nhk Spring Co Ltd | 加熱装置 |
JP2002527653A (ja) | 1998-10-16 | 2002-08-27 | 株式会社エスイー | 緊張ケーブル偏向具 |
JP2003133195A (ja) | 2001-10-24 | 2003-05-09 | Ngk Insulators Ltd | 加熱装置 |
JP2009182139A (ja) | 2008-01-30 | 2009-08-13 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
JP2016536803A (ja) | 2013-09-16 | 2016-11-24 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 温度プロファイル制御装置を有する加熱基板支持体 |
WO2018159189A1 (ja) | 2017-02-28 | 2018-09-07 | 日本発條株式会社 | 基板支持ユニット、および基板支持ユニットを有する成膜装置 |
WO2020075576A1 (ja) | 2018-10-11 | 2020-04-16 | 日本発條株式会社 | ステージ、成膜装置、および膜加工装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4853432B2 (ja) * | 2007-09-05 | 2012-01-11 | 東京エレクトロン株式会社 | 載置台構造及び処理装置 |
JP2011061040A (ja) * | 2009-09-10 | 2011-03-24 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
TWI501339B (zh) * | 2010-09-24 | 2015-09-21 | Ngk Insulators Ltd | Semiconductor manufacturing device components |
US9984866B2 (en) * | 2012-06-12 | 2018-05-29 | Component Re-Engineering Company, Inc. | Multiple zone heater |
US9088085B2 (en) * | 2012-09-21 | 2015-07-21 | Novellus Systems, Inc. | High temperature electrode connections |
US10973088B2 (en) * | 2016-04-18 | 2021-04-06 | Applied Materials, Inc. | Optically heated substrate support assembly with removable optical fibers |
TWI749231B (zh) * | 2017-05-25 | 2021-12-11 | 日商日本碍子股份有限公司 | 晶圓基座 |
KR102373076B1 (ko) * | 2017-11-02 | 2022-03-11 | 엔지케이 인슐레이터 엘티디 | 반도체 제조 장치용 부재, 그 제조법 및 성형형 |
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002527653A (ja) | 1998-10-16 | 2002-08-27 | 株式会社エスイー | 緊張ケーブル偏向具 |
JP2001210705A (ja) | 2000-01-28 | 2001-08-03 | Toshiba Corp | 静電チャック、処理装置および半導体装置の製造方法 |
JP2001326181A (ja) | 2000-05-12 | 2001-11-22 | Nhk Spring Co Ltd | 加熱装置 |
JP2003133195A (ja) | 2001-10-24 | 2003-05-09 | Ngk Insulators Ltd | 加熱装置 |
JP2009182139A (ja) | 2008-01-30 | 2009-08-13 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
JP2016536803A (ja) | 2013-09-16 | 2016-11-24 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 温度プロファイル制御装置を有する加熱基板支持体 |
WO2018159189A1 (ja) | 2017-02-28 | 2018-09-07 | 日本発條株式会社 | 基板支持ユニット、および基板支持ユニットを有する成膜装置 |
WO2020075576A1 (ja) | 2018-10-11 | 2020-04-16 | 日本発條株式会社 | ステージ、成膜装置、および膜加工装置 |
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KR20220050765A (ko) | 2022-04-25 |
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KR102626207B1 (ko) | 2024-01-18 |
US20220124874A1 (en) | 2022-04-21 |
JP2022065943A (ja) | 2022-04-28 |
TW202218064A (zh) | 2022-05-01 |
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