JP2016536803A - 温度プロファイル制御装置を有する加熱基板支持体 - Google Patents
温度プロファイル制御装置を有する加熱基板支持体 Download PDFInfo
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- JP2016536803A JP2016536803A JP2016542065A JP2016542065A JP2016536803A JP 2016536803 A JP2016536803 A JP 2016536803A JP 2016542065 A JP2016542065 A JP 2016542065A JP 2016542065 A JP2016542065 A JP 2016542065A JP 2016536803 A JP2016536803 A JP 2016536803A
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- shaft
- heater
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- substrate support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49083—Heater type
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Resistance Heating (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (15)
- 基板受容面と反対側の底面とを有するプレートと、
シャフトヒータを備える第1の端部、及び第2の端部を有するシャフトとを備え、
前記第1の端部が前記底面に結合されている、基板支持体。 - 前記第1の端部はフランジを備え、前記シャフトヒータは前記フランジ内に配置されている、請求項1に記載の基板支持体。
- 前記シャフトヒータが抵抗ヒータである、請求項1に記載の基板支持体。
- 前記シャフトヒータが、前記第1の端部の一部に埋め込まれている、請求項3に記載の基板支持体。
- 前記シャフトヒータが、前記シャフトに埋め込まれた導体を備える、請求項3に記載の基板支持体。
- 前記シャフトヒータに結合され、コントローラに結合された電源と、
前記第1の端部に配置され、前記コントローラに結合されたシャフト温度センサとを更に備え、
前記シャフトヒータ、前記電源、前記コントローラ、及び前記シャフト温度センサが、第1の閉ループ制御回路においてつながっている、請求項1から5のいずれか1項に記載の基板支持体。 - 前記プレートが更に、
前記プレートに配置されたプレートヒータと、
前記プレートヒータに結合され、前記コントローラに結合された電源と、
前記プレートに配置され、前記コントローラに結合されたプレート温度センサとを備え、
前記プレートヒータ、前記電源、前記コントローラ、及び前記プレート温度センサは、第2の閉ループ制御回路においてつながっている、請求項6に記載の基板支持体。 - 前記コントローラは、前記第1の閉ループ制御回路と、前記第2の閉ループ制御回路とを独立に制御して、前記プレートと前記シャフトとを予め選択された温度に維持するように構成されている、請求項7に記載の基板支持体。
- 前記シャフトが、セラミック材料の層から形成されている、請求項1から5のいずれか1項に記載の基板支持体。
- 前記セラミック材料は、窒化ケイ素(Si3N4)、アルミナ(Al2O3)、窒化アルミニウム(AlN)、又は炭化ケイ素(SiC)の内の一又は複数を含む、請求項9に記載の基板支持体。
- 前記シャフトが、セラミック材料の2以上の層から形成されている、請求項9に記載の基板支持体。
- 前記シャフトヒータが、セラミック材料の層に配置されている、請求項9に記載の基板支持体。
- 前記シャフトは更に、前記セラミック材料の層に配置され、前記シャフトヒータに結合された導体を備える、請求項9に記載の基板支持体。
- 基板支持体を作製する方法であって、
基板受容面と、反対側の底面とを有するプレートを形成することと、
第1の端部と、反対側の第2の端部とを備える、セラミック材料の第1の層を形成することと、
前記第1の層の前記第1の端部にヒータを配置することと、
導体の一方の端部が前記ヒータに結合され、前記導体の2番目の端部が前記セラミック材料の前記第2の端部を越えて延在するように、前記第1の層に前記導体を配置することと、
第2の層が少なくとも部分的に前記ヒータをカバーするように、前記第1の層の上に前記セラミック材料の前記第2の層を形成することと、
前記第1の層と、前記第2の層とを処理して、シャフトを形成することと、
前記第1の端部を前記プレートの前記底面に結合させることと
を含む方法。 - 前記ヒータが、前記セラミック材料の層にプリントされる、請求項14に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361878370P | 2013-09-16 | 2013-09-16 | |
US61/878,370 | 2013-09-16 | ||
US14/481,283 US9698074B2 (en) | 2013-09-16 | 2014-09-09 | Heated substrate support with temperature profile control |
US14/481,283 | 2014-09-09 | ||
PCT/US2014/054945 WO2015038610A1 (en) | 2013-09-16 | 2014-09-10 | Heated substrate support with temperature profile control |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016536803A true JP2016536803A (ja) | 2016-11-24 |
JP2016536803A5 JP2016536803A5 (ja) | 2017-11-30 |
JP6404355B2 JP6404355B2 (ja) | 2018-10-10 |
Family
ID=52666222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016542065A Expired - Fee Related JP6404355B2 (ja) | 2013-09-16 | 2014-09-10 | 温度プロファイル制御装置を有する加熱基板支持体 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9698074B2 (ja) |
JP (1) | JP6404355B2 (ja) |
KR (1) | KR102244625B1 (ja) |
CN (1) | CN105556656B (ja) |
TW (1) | TWI645498B (ja) |
WO (1) | WO2015038610A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018159189A1 (ja) * | 2017-02-28 | 2018-09-07 | 日本発條株式会社 | 基板支持ユニット、および基板支持ユニットを有する成膜装置 |
JP2019169636A (ja) * | 2018-03-23 | 2019-10-03 | 東京エレクトロン株式会社 | 基板加熱装置及びこれを用いた基板処理装置 |
WO2020189264A1 (ja) * | 2019-03-18 | 2020-09-24 | 日本碍子株式会社 | セラミックヒータ及びその製法 |
WO2021002169A1 (ja) * | 2019-07-01 | 2021-01-07 | 日本碍子株式会社 | シャフト付きセラミックヒータ |
JPWO2021010063A1 (ja) * | 2019-07-16 | 2021-01-21 | ||
WO2021010062A1 (ja) * | 2019-07-16 | 2021-01-21 | 日本碍子株式会社 | シャフト付きセラミックヒータ |
JP2022065943A (ja) * | 2020-10-16 | 2022-04-28 | 日本碍子株式会社 | ウエハ載置台 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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US9972477B2 (en) | 2014-06-28 | 2018-05-15 | Applied Materials, Inc. | Multiple point gas delivery apparatus for etching materials |
US10186437B2 (en) * | 2015-10-05 | 2019-01-22 | Lam Research Corporation | Substrate holder having integrated temperature measurement electrical devices |
US20170229331A1 (en) * | 2016-02-08 | 2017-08-10 | Watlow Electric Manufacturing Company | Temperature sensing system for rotatable wafer support assembly |
US10184183B2 (en) * | 2016-06-21 | 2019-01-22 | Applied Materials, Inc. | Substrate temperature monitoring |
TWI671851B (zh) | 2016-09-22 | 2019-09-11 | 美商應用材料股份有限公司 | 用於寬範圍溫度控制的加熱器基座組件 |
JP6704834B2 (ja) * | 2016-10-28 | 2020-06-03 | 日本特殊陶業株式会社 | 加熱装置 |
US11978646B2 (en) | 2017-05-18 | 2024-05-07 | Applied Materials, Inc. | Thermal chamber with improved thermal uniformity |
JP7049818B2 (ja) * | 2017-12-13 | 2022-04-07 | 東京エレクトロン株式会社 | 成膜装置 |
WO2019180785A1 (ja) * | 2018-03-19 | 2019-09-26 | 日新電機株式会社 | 基板加熱システム及び基板処理装置 |
JP7216710B2 (ja) * | 2018-03-23 | 2023-02-01 | 日本碍子株式会社 | マルチゾーンヒータ |
KR102098556B1 (ko) * | 2018-07-09 | 2020-04-17 | 주식회사 테스 | 기판지지유닛 및 이를 구비한 기판처리장치 |
KR20210066829A (ko) * | 2018-10-24 | 2021-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 증착 챔버에 대한 기판 지지부 설계들 |
CN111383891B (zh) * | 2018-12-29 | 2023-03-10 | 中微半导体设备(上海)股份有限公司 | 用于半导体处理设备的温度控制装置及其温度控制方法 |
CN110060913A (zh) * | 2019-04-22 | 2019-07-26 | 德淮半导体有限公司 | 离子植入机以及监测离子植入机中离子束的方法 |
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- 2014-09-10 KR KR1020167009634A patent/KR102244625B1/ko active IP Right Grant
- 2014-09-10 CN CN201480049638.2A patent/CN105556656B/zh not_active Expired - Fee Related
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CN114041323A (zh) * | 2019-07-16 | 2022-02-11 | 日本碍子株式会社 | 带轴的陶瓷加热器 |
CN114175851A (zh) * | 2019-07-16 | 2022-03-11 | 日本碍子株式会社 | 带轴的陶瓷加热器 |
JP7174159B2 (ja) | 2019-07-16 | 2022-11-17 | 日本碍子株式会社 | シャフト付きセラミックヒータ |
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JPWO2021010063A1 (ja) * | 2019-07-16 | 2021-01-21 | ||
KR102603485B1 (ko) | 2019-07-16 | 2023-11-16 | 엔지케이 인슐레이터 엘티디 | 샤프트를 갖는 세라믹 히터 |
JP2022065943A (ja) * | 2020-10-16 | 2022-04-28 | 日本碍子株式会社 | ウエハ載置台 |
JP7430617B2 (ja) | 2020-10-16 | 2024-02-13 | 日本碍子株式会社 | ウエハ載置台 |
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JP6404355B2 (ja) | 2018-10-10 |
TW201515145A (zh) | 2015-04-16 |
US20150076135A1 (en) | 2015-03-19 |
CN105556656B (zh) | 2018-11-02 |
TWI645498B (zh) | 2018-12-21 |
KR20160055257A (ko) | 2016-05-17 |
KR102244625B1 (ko) | 2021-04-23 |
US9698074B2 (en) | 2017-07-04 |
WO2015038610A1 (en) | 2015-03-19 |
CN105556656A (zh) | 2016-05-04 |
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