CN114175851A - 带轴的陶瓷加热器 - Google Patents

带轴的陶瓷加热器 Download PDF

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CN114175851A
CN114175851A CN202080050721.7A CN202080050721A CN114175851A CN 114175851 A CN114175851 A CN 114175851A CN 202080050721 A CN202080050721 A CN 202080050721A CN 114175851 A CN114175851 A CN 114175851A
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ceramic
shaft
conductive film
resistance heating
recess
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竹林央史
相川贤一郎
久野达也
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NGK Insulators Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H05B3/06—Heater elements structurally combined with coupling elements or holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/002—Heaters using a particular layout for the resistive material or resistive elements
    • H05B2203/005—Heaters using a particular layout for the resistive material or resistive elements using multiple resistive elements or resistive zones isolated from each other
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/016—Heaters using particular connecting means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/017—Manufacturing methods or apparatus for heaters

Abstract

一种带轴的陶瓷加热器，具备：陶瓷板，其埋设有电阻发热体；中空的陶瓷轴，其接合于陶瓷板的与晶片载置面相反侧的面；导电膜，其以沿着陶瓷轴的内周面的方式沿轴向设置；凹部，其以从陶瓷板的与晶片载置面相反侧的面到达电阻发热体的端子的方式设置，所述端子的下表面在该凹部的底面露出，并且导电膜的表面在该凹部的侧面露出；以及连接构件，其填充于凹部，将端子的下表面与导电膜的表面电连接。

Description

带轴的陶瓷加热器
技术领域
本发明涉及带轴的陶瓷加热器。
背景技术
以往，在半导体晶片的输送、曝光、CVD等成膜工艺、清洗、蚀刻、切割等微细加工中，使用保持晶片的带轴的陶瓷加热器。作为这样的带轴的陶瓷加热器，如专利文献1所示，公开了一种带轴的陶瓷加热器，其具备：埋设有电阻发热体的陶瓷板、接合于陶瓷板的与晶片载置面相反侧的面的中空的陶瓷轴、以在陶瓷轴的内周壁面沿上下方向延伸的方式形成的导电膜、以及将电阻发热体与导电膜电连接的导线(参照图5)。
现有技术文献
专利文献
专利文献1：日本特开2017-162878号公报
发明内容
发明所要解决的课题
然而，由于电阻发热体与导电膜通过导线连接，因此电阻发热体与导电膜的电连接的可靠性低。具体而言，在制造时、使用时，有连接电阻发热体和导电膜的导线发生脱落的担忧。
本发明是为了解决这样的课题而完成的，其主要目的在于提高电阻发热体与导电膜的电连接的可靠性。
用于解决课题的方案
本发明的带轴的陶瓷加热器具备：
陶瓷板，其埋设有电阻发热体；
中空的陶瓷轴，其接合于所述陶瓷板的与晶片载置面相反侧的面；
导电膜，其以沿着所述陶瓷轴的内周面的方式沿轴向设置；
凹部，其以从所述陶瓷板的与所述晶片载置面相反侧的面到达所述电阻发热体的端子的方式设置，所述端子的下表面在所述凹部的底面露出，并且所述导电膜的表面在所述凹部的侧面露出；以及
连接构件，其填充于所述凹部，将所述端子的下表面与所述导电膜的表面电连接。
在该带轴的陶瓷加热器中，连接构件填充于凹部。端子的下表面在凹部的底面露出，导电膜的表面在凹部的侧面露出。连接构件与电阻发热体的端子的下表面进行面接触，并且与导电膜的表面进行面接触。因此，与用导线连接电阻发热体的端子和导电膜的情况相比，电阻发热体和导电膜的电连接的可靠性变高。
在本发明的带轴的陶瓷加热器中，也可以是，所述电阻发热体设置于所述陶瓷板的多个区域的各个区域，所述端子针对每个所述电阻发热体独立地设置2个，所述导电膜针对每个所述电阻发热体独立地设置2个。在将用于向电阻发热体供电的杆配置于陶瓷轴的内部空间的情况下，杆的根数受到限制，伴随于此，电阻发热体的数量也受到限制，但在此使用导电膜来代替杆，因此能够应对更多的电阻发热体。
在本发明的带轴的陶瓷加热器中，也可以是，所述导电膜和所述连接构件被绝缘膜覆盖。这样，能够防止导电膜、连接构件与其他金属构件等接触而短路。这样的绝缘膜优选为气溶胶沉积(AD)膜或喷镀膜。
附图说明
[图1]本实施方式的带轴的陶瓷加热器的纵剖视图。
[图2]图1的局部放大图。
[图3]带轴的陶瓷加热器的仰视图。
[图4]另一实施方式的局部放大图。
[图5]以往的带轴的陶瓷加热器的纵剖视图。
具体实施方式
以下，参照附图对本发明的优选实施方式进行说明。图1是本实施方式的带轴的陶瓷加热器的纵剖视图。
如图1所示，带轴的陶瓷加热器具备陶瓷板、陶瓷轴、导电膜、凹部(参照图2)以及连接构件。在陶瓷板中埋设有RF电极和电阻发热体。RF电极是在产生等离子体时被施加高频电压的电极。RF供电杆收纳于陶瓷轴的内部空间，从陶瓷板的与晶片载置面相反侧的面与RF电极接合。电阻发热体在被通电时对陶瓷板进行加热。在本实施方式中，电阻发热体设置于陶瓷板的多个(3个)区域的各个区域。端子针对每个电阻发热体独立地设置2个。陶瓷轴是通过直接接合而接合于陶瓷板的与晶片载置面相反侧的面的中空轴。导电膜以沿着陶瓷轴的内周面的方式沿轴向(上下方向)设置。导电膜可以通过印刷、镀敷等来形成，也可以通过AD法、喷镀法、CVD法、PVD法等来成膜。导电膜针对每个电阻发热体各设置有2个。凹部是以从陶瓷板的与晶片载置面相反侧的面到达电阻发热体的端子的方式设置的U字槽(参照图3)。端子的下表面在凹部的底面露出。导电膜的表面在凹部的侧面露出。连接构件填充于凹部，将电阻发热体的端子的下表面与导电膜的表面电连接。连接构件是将配置于凹部的钎料熔融后固化而成的。
在以上说明的本实施方式的带轴的陶瓷加热器中，连接构件填充于凹部。端子的下表面在凹部的底面露出，导电膜的表面在凹部的侧面露出。连接构件与电阻发热体的端子的下表面进行面接触，并且与导电膜的表面进行面接触。因此，与用导线连接电阻发热体的端子和导电膜的情况相比，电阻发热体和导电膜的电连接的可靠性变高。
另外，在将用于向电阻发热体供电的杆配置于陶瓷轴的内部空间的情况下，杆的根数受到限制，伴随于此，电阻发热体的数量也受到限制，但在此，由于使用导电膜来代替杆，因此能够应对更多的电阻发热体。
在上述的实施方式中，如图4所示，也可以用绝缘膜覆盖导电膜和连接构件的表面。这样，能够防止导电膜、连接构件与其他金属构件等接触而发生短路。绝缘膜优选为气溶胶沉积(AD)膜或喷镀膜。特别是，AD法(包括等离子体AD法)适于高精度地形成微细的陶瓷粒子的薄膜。另外，AD法能够通过冲击固化现象使陶瓷粒子成膜，因此不需要在高温下烧结陶瓷粒子。
在上述的实施方式中，也可以在陶瓷板中埋设有静电电极。
本申请以2019年7月16日申请的日本专利申请第2019-130905号为优先权主张的基础，其全部内容通过引用而包含在本说明书中。
产业上的可利用性
本发明能够利用于例如半导体晶片的输送、曝光、CVD等成膜工艺、清洗、蚀刻、切割等微细加工。

Claims (4)

1.一种带轴的陶瓷加热器，具备：
陶瓷板，其埋设有电阻发热体；
中空的陶瓷轴，其接合于所述陶瓷板的与晶片载置面相反侧的面；
导电膜，其以沿着所述陶瓷轴的内周面的方式沿轴向设置；
凹部，其以从所述陶瓷板的与所述晶片载置面相反侧的面到达所述电阻发热体的端子的方式设置，所述端子的下表面在所述凹部的底面露出，并且所述导电膜的表面在所述凹部的侧面露出；以及
连接构件，其填充于所述凹部，将所述端子的下表面与所述导电膜的表面电连接。
2.根据权利要求1所述的带轴的陶瓷加热器，所述电阻发热体设置于所述陶瓷板的多个区域的各个区域，
所述端子针对每个所述电阻发热体独立地设置2个，
所述导电膜针对每个所述电阻发热体独立地设置2个。
3.根据权利要求1或2所述的带轴的陶瓷加热器，所述导电膜和所述连接构件被绝缘膜覆盖。
4.根据权利要求3所述的带轴的陶瓷加热器，所述绝缘膜为气溶胶沉积膜或喷镀膜。
CN202080050721.7A 2019-07-16 2020-06-10 带轴的陶瓷加热器 Pending CN114175851A (zh)

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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237304A (ja) * 2000-02-21 2001-08-31 Ibiden Co Ltd 半導体製造・検査装置用セラミック基板
CN1484855A (zh) * 2001-08-10 2004-03-24 揖斐电株式会社 陶瓷接合体
JP2006517740A (ja) * 2003-01-17 2006-07-27 ゼネラル・エレクトリック・カンパニイ ウェーハ加工装置及びその製造方法
CN101026119A (zh) * 2005-12-21 2007-08-29 通用电气公司 耐蚀刻晶片处理装置和其制造方法
CN105282877A (zh) * 2014-06-17 2016-01-27 住友电气工业株式会社 用于半导体制造装置的陶瓷加热器
JP2016536803A (ja) * 2013-09-16 2016-11-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 温度プロファイル制御装置を有する加熱基板支持体
CN107240568A (zh) * 2016-03-28 2017-10-10 日本碍子株式会社 晶片载置装置
US20180204754A1 (en) * 2016-03-07 2018-07-19 Ngk Spark Plug Co., Ltd. Substrate supporting device
TW201838035A (zh) * 2017-03-02 2018-10-16 日商日本碍子股份有限公司 晶圓加熱裝置
JP2019040939A (ja) * 2017-08-23 2019-03-14 住友電気工業株式会社 ウエハ載置台

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4133958B2 (ja) * 2004-08-04 2008-08-13 日本発条株式会社 ワークを加熱または冷却するための装置と、その製造方法
JP5236927B2 (ja) 2007-10-26 2013-07-17 信越化学工業株式会社 耐腐食性積層セラミックス部材
JP2009182139A (ja) 2008-01-30 2009-08-13 Tokyo Electron Ltd 載置台構造及び処理装置
JP7109953B2 (ja) 2018-03-26 2022-08-01 日本特殊陶業株式会社 加熱装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001237304A (ja) * 2000-02-21 2001-08-31 Ibiden Co Ltd 半導体製造・検査装置用セラミック基板
CN1484855A (zh) * 2001-08-10 2004-03-24 揖斐电株式会社 陶瓷接合体
JP2006517740A (ja) * 2003-01-17 2006-07-27 ゼネラル・エレクトリック・カンパニイ ウェーハ加工装置及びその製造方法
CN101026119A (zh) * 2005-12-21 2007-08-29 通用电气公司 耐蚀刻晶片处理装置和其制造方法
JP2016536803A (ja) * 2013-09-16 2016-11-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 温度プロファイル制御装置を有する加熱基板支持体
CN105282877A (zh) * 2014-06-17 2016-01-27 住友电气工业株式会社 用于半导体制造装置的陶瓷加热器
US20180204754A1 (en) * 2016-03-07 2018-07-19 Ngk Spark Plug Co., Ltd. Substrate supporting device
CN107240568A (zh) * 2016-03-28 2017-10-10 日本碍子株式会社 晶片载置装置
TW201838035A (zh) * 2017-03-02 2018-10-16 日商日本碍子股份有限公司 晶圓加熱裝置
JP2019040939A (ja) * 2017-08-23 2019-03-14 住友電気工業株式会社 ウエハ載置台

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