CN114041323A - 带轴的陶瓷加热器 - Google Patents

带轴的陶瓷加热器 Download PDF

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CN114041323A
CN114041323A CN202080047846.4A CN202080047846A CN114041323A CN 114041323 A CN114041323 A CN 114041323A CN 202080047846 A CN202080047846 A CN 202080047846A CN 114041323 A CN114041323 A CN 114041323A
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ceramic
shaft
resistance heating
conductive film
heating element
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久野达也
竹林央史
相川贤一郎
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NGK Insulators Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/016—Heaters using particular connecting means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/017—Manufacturing methods or apparatus for heaters

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Resistance Heating (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一种带轴的陶瓷加热器，其具备：埋设有电阻发热体的陶瓷板；接合于陶瓷板的与晶片载置面相反侧的面上的中空陶瓷轴；以沿着轴向的方式设置于陶瓷轴内周面的多个纵槽；设置于纵槽内的导电膜；以及将电阻发热体的端子与导电膜电连接的连接部件。

Description

带轴的陶瓷加热器
技术领域
本发明涉及带轴的陶瓷加热器。
背景技术
以往，在半导体晶片的输送、曝光、CVD等成膜工艺、清洗、蚀刻、切割等微细加工中，使用保持晶片的带轴的陶瓷加热器。作为这样的带轴的陶瓷加热器，如专利文献1所示，公开了一种陶瓷加热器，其具备：埋设有电阻发热体的陶瓷板、接合于陶瓷板的与晶片载置面相反侧的面上的中空陶瓷轴、以沿上下方向延伸的方式形成在陶瓷轴内周壁面的导电膜、以及将电阻发热体与导电膜电连接的导线(参照图5)。
现有技术文献
专利文献
专利文献1：日本特开2017-162878号公报
发明内容
发明所要解决的课题
然而，在将导电膜形成于陶瓷轴的内周壁面时，相邻的导电膜有可能会相连。
本发明是为了解决这样的课题而完成的，其主要目的在于使相邻的导电膜难以相连。
用于解决课题的方法
本发明的带轴的陶瓷加热器具备：
陶瓷板，其埋设有电阻发热体；
中空的陶瓷轴，其接合于所述陶瓷板的与晶片载置面相反侧的面上；
多个纵槽，其以沿着轴向的方式设置在所述陶瓷轴的内周面；
导电膜，其形成在所述多个纵槽内；以及
连接部件，其将所述电阻发热体的端子与所述导电膜电连接。
在该带轴的陶瓷加热器中，导电膜形成于以沿着轴向的方式设置在陶瓷轴的内周面上的纵槽内。因此，相邻的导电膜通过陶瓷轴中的纵槽与纵槽的边界部分而被隔开。因此，相邻的导电膜因这样的边界部分的存在而变得不易相连。
在本发明的带轴的陶瓷加热器中，也可以是，所述电阻发热体设置于所述陶瓷板的多个区域中的每一个，所述端子对于每个所述电阻发热体各自独立地设置有2个，所述导电膜对于每个所述电阻发热体各自独立地设置有2个。在将用于向电阻发热体供电的棒配置于陶瓷轴的内部空间的情况下，棒的根数受到限制，伴随于此，电阻发热体的数量也受到限制，但在此由于使用导电膜来代替棒，因此能够应对更多的电阻发热体。
在本发明的带轴的陶瓷加热器中，所述导电膜以及所述连接部件也可以被绝缘膜覆盖。这样，能够防止导电膜、连接部件与其他金属部件等接触而短路。这样的绝缘膜优选为气溶胶沉积(AD)膜或喷镀膜。
附图说明
图1是本实施方式的带轴的陶瓷加热器的纵剖视图。
图2是图1的局部放大图。
图3是带轴的陶瓷加热器的仰视图。
图4是另一实施方式的局部放大图。
图5是以往的带轴的陶瓷加热器的纵剖视图。
具体实施方式
以下，参照附图对本发明的优选实施方式进行说明。图1是本实施方式的带轴的陶瓷加热器的纵剖视图。
如图1所示，带轴的陶瓷加热器具备陶瓷板、陶瓷轴、纵槽、导电膜、凹部(参照图2)以及连接部件。在陶瓷板中埋设有RF电极和电阻发热体。RF电极是在产生等离子体时被施加高频电压的电极。RF供电棒收容于陶瓷轴的内部空间，从陶瓷板的与晶片载置面相反侧的面与RF电极接合。电阻发热体在被通电时对陶瓷板进行加热。在本实施方式中，电阻发热体设置于陶瓷板的多个(3个)区域中的每一个。端子对于每个电阻发热体各自独立地设置有2个。陶瓷轴是通过直接接合而接合于陶瓷板的与晶片载置面相反侧的面上的中空轴。纵槽是以沿着轴向的方式设置于陶瓷轴的内周面的凹槽。在本实施方式中，等间隔地设置有6个纵槽(参照图3)。导电膜以顺着陶瓷轴的纵槽内的方式沿轴向(上下方向)设置。导电膜可以通过印刷、镀敷等形成，也可以通过AD法、喷镀法、CVD法、PVD法等成膜。导电膜对于每个电阻发热体各设置有2个。凹部是以从陶瓷板的与晶片载置面相反侧的面到达电阻发热体的端子的方式设置的U字槽(参照图2)。在凹部的底面露出端子的下表面。在凹部的侧面露出导电膜的表面。连接部件填充于凹部，将电阻发热体的端子的下表面与导电膜的表面电连接。连接部件是将配置于凹部的钎料熔融后固化而成的部件。
在以上说明的本实施方式的带轴的陶瓷加热器中，导电膜形成于以沿着轴向的方式设置在陶瓷轴的内周面上的纵槽内。因此，相邻的导电膜通过陶瓷轴中的纵槽与纵槽的边界部分而被隔开。因此，相邻的导电膜因这样的边界部分的存在而变得不易相连。
另外，在将用于向电阻发热体供电的棒配置于陶瓷轴的内部空间的情况下，棒的根数受到限制，伴随于此，电阻发热体的数量也受到限制，但在此由于使用导电膜来代替棒，因此能够应对更多的电阻发热体。
在上述的实施方式中，如图4所示，也可以用绝缘膜覆盖导电膜以及连接部件的表面。这样，能够防止导电膜、连接部件与其他金属部件等接触而短路。绝缘膜优选为气溶胶沉积(AD)膜或喷镀膜。特别是，AD法(包括等离子体AD法)适于高精度地形成微细的陶瓷粒子的较薄的膜。另外，AD法由于能够通过冲击固化现象使陶瓷粒子成膜，因此不需要在高温下烧结陶瓷粒子。
在上述的实施方式中，也可以在陶瓷板中埋设有静电电极。
本申请将2019年7月16日申请的日本专利申请第2019-130906号作为优先权主张的基础，通过引用将其全部内容包含在本说明书中。
产业上的利用可能性
本发明能够用于例如半导体晶片的输送、曝光、CVD等成膜工艺、清洗、蚀刻、切割等微细加工。

Claims (4)

1.一种带轴的陶瓷加热器，具备：
陶瓷板，其埋设有电阻发热体；
中空的陶瓷轴，其接合于所述陶瓷板的与晶片载置面相反侧的面上；
多个纵槽，其以沿着轴向的方式设置在所述陶瓷轴的内周面；
导电膜，其设置在所述纵槽内；以及
连接部件，其将所述电阻发热体的端子与所述导电膜电连接。
2.根据权利要求1所述的带轴的陶瓷加热器，所述电阻发热体设置于所述陶瓷板的多个区域中的每一个，
所述端子对于每个所述电阻发热体各自独立地设置有2个，
所述导电膜对于每个所述电阻发热体各自独立地设置有2个。
3.根据权利要求1或2所述的带轴的陶瓷加热器，所述导电膜和所述连接部件被绝缘膜覆盖。
4.根据权利要求3所述的带轴的陶瓷加热器，所述绝缘膜为气溶胶沉积膜或喷镀膜。
CN202080047846.4A 2019-07-16 2020-06-10 带轴的陶瓷加热器 Pending CN114041323A (zh)

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JP2019-130906 2019-07-16
PCT/JP2020/022835 WO2021010063A1 (ja) 2019-07-16 2020-06-10 シャフト付きセラミックヒータ

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WO (1) WO2021010063A1 (zh)

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Publication number Priority date Publication date Assignee Title
CN1596557A (zh) * 2001-11-30 2005-03-16 揖斐电株式会社 陶瓷加热器
CN1779940A (zh) * 2004-10-26 2006-05-31 京瓷株式会社 晶片支撑构件及利用其的半导体制造装置
JP2006139958A (ja) * 2004-11-10 2006-06-01 Toshiba Corp 荷電ビーム装置
JP2006517740A (ja) * 2003-01-17 2006-07-27 ゼネラル・エレクトリック・カンパニイ ウェーハ加工装置及びその製造方法
JP2007173828A (ja) * 2005-12-21 2007-07-05 General Electric Co <Ge> エッチング耐性ウェーハ加工装置及びその製造方法
JP2013062088A (ja) * 2011-09-12 2013-04-04 Momentive Performance Materials Inc ポスト型セラミックスヒータおよびその製造方法
CN103811102A (zh) * 2014-02-19 2014-05-21 上海和辉光电有限公司 各向异性导电膜及其制造方法
TW201608047A (zh) * 2014-07-02 2016-03-01 應用材料股份有限公司 用於電漿處理的多區域基座
JP2016536803A (ja) * 2013-09-16 2016-11-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 温度プロファイル制御装置を有する加熱基板支持体
US20180204754A1 (en) * 2016-03-07 2018-07-19 Ngk Spark Plug Co., Ltd. Substrate supporting device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1596557A (zh) * 2001-11-30 2005-03-16 揖斐电株式会社 陶瓷加热器
JP2006517740A (ja) * 2003-01-17 2006-07-27 ゼネラル・エレクトリック・カンパニイ ウェーハ加工装置及びその製造方法
CN1779940A (zh) * 2004-10-26 2006-05-31 京瓷株式会社 晶片支撑构件及利用其的半导体制造装置
JP2006139958A (ja) * 2004-11-10 2006-06-01 Toshiba Corp 荷電ビーム装置
JP2007173828A (ja) * 2005-12-21 2007-07-05 General Electric Co <Ge> エッチング耐性ウェーハ加工装置及びその製造方法
JP2013062088A (ja) * 2011-09-12 2013-04-04 Momentive Performance Materials Inc ポスト型セラミックスヒータおよびその製造方法
JP2016536803A (ja) * 2013-09-16 2016-11-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 温度プロファイル制御装置を有する加熱基板支持体
CN103811102A (zh) * 2014-02-19 2014-05-21 上海和辉光电有限公司 各向异性导电膜及其制造方法
TW201608047A (zh) * 2014-07-02 2016-03-01 應用材料股份有限公司 用於電漿處理的多區域基座
US20180204754A1 (en) * 2016-03-07 2018-07-19 Ngk Spark Plug Co., Ltd. Substrate supporting device

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KR102603485B1 (ko) 2023-11-16
KR20210144780A (ko) 2021-11-30
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US20220030668A1 (en) 2022-01-27
JP7174159B2 (ja) 2022-11-17

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